Abstract: A shroud assembly for a turbine section of a turbine engine includes a shroud plate in thermal communication with a hot combustion gas flow and a baffle overlying the shroud plate to define a region. One or more shaped cooling features are located along the region such that a cooling fluid flow passing through the region encounters the shaped cooling features to increase the turbulence of the cooling fluid flow.

Abstract: An engine component for a gas turbine engine includes a film-cooled substrate having a hot surface facing hot combustion gas flow and a cooling surface facing a cooling fluid flow. A film hole extends through the substrate to an outlet on the hot surface. A flow conditioning structure is provided upstream of the outlet.

Abstract: In this novel PDC cutter, diamond powders of different composition and/or different grain size, are distributed, shaped, and compacted with a novel pressing tool, in multiple stages, spatially arranged into different regions of the PDC diamond body, then HPHT sintered to form one PDC body with spatially varying hardness, toughness and thermal resistance.

Abstract: An airfoil comprises one or more internal cooling circuits. The cooling circuit can further comprise a near wall cooling mesh, fluidly coupling a supply passage to a mesh plenum. The mesh plenum can be disposed adjacent to the external surface of the airfoil having a plurality of film holes extending between the mesh plenum and the external surface of the airfoil. The mesh plenum can further comprise a cross-sectional area sized to facilitate machining of the film holes without damage to the interior of the airfoil.

Abstract: A method of forming a semiconductor device includes forming a porous dielectric layer including a recessed portion, forming a conductive layer in the recessed portion of the porous dielectric layer, and forming a conformal cap layer on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the conformal cap layer.

Abstract: An anti-counterfeiting method, system, and non-transitory computer readable medium an anti-counterfeiting system, include a production circuit configured to produce a Directed Self-Assembly (DSA) pattern including a unique pattern, an analysis circuit configured to analyze the unique pattern, an embedding circuit configured to embed the unique pattern on a document, and a verification circuit configured to verify that the unique pattern embedded on the document corresponds to the document.

Abstract: An anti-counterfeiting method, system, and non-transitory computer readable medium, include a production circuit configured to produce a Directed Self-Assembly (DSA) pattern including a unique pattern, an analysis circuit configured to analyze the unique pattern, an embedding circuit configured to embed the unique pattern on a document, and a verification circuit configured to verify that the unique pattern embedded on the document corresponds to the document.

Abstract: The invention features a refrigerator cabinet door frame. The frame includes a thermally conductive outer frame, a thermally insulating inner frame member, and a sealing plate. The outer frame member includes a forward end having an outer surface that is disposed outside of a refrigerated cabinet with the frame mounted, and a rearward end defining a joint. The inner frame member includes a first end retained in the joint, and a second end. The sealing plate includes a first edge coupled to the outer frame member at the rearward end, forward of the joint, a second edge supported by the second end of the inner frame member, and a thermally conductive sealing surface. The first edge of the sealing plate is coupled to the outer frame member such that the sealing surface and the outer surface of the outer frame member together form a continuous heat transfer path.

Abstract: A method of fabricating a metallization layer of a semiconductor device in which copper is used for an interconnect material and cobalt is used to encapsulate the copper. A material is introduced that will interact with the cobalt to cause a hexagonal-close-packed (HCP) crystal structure of cobalt to change to a face-centered-cubic (FCC) crystal structure of cobalt, the FCC crystal structure providing a resistance of the cobalt to migrate.

Abstract: An engine component for a gas turbine engine includes a film-cooled substrate having a hot surface facing hot combustion gas flow and a cooling surface facing a cooling fluid flow. A film hole extends through the substrate to an outlet on the hot surface. A flow conditioning structure is provided upstream of the outlet.

Abstract: A method of forming a semiconductor device, includes forming a conductive layer in a recessed portion of a porous dielectric layer, partially removing a top portion of the conductive layer while maintaining a height of the porous dielectric layer, forming a conformal cap layer on the porous dielectric layer and the conductive layer in the recessed portion, polishing the conformal cap layer to form a gap in the conformal cap layer, such that an upper surface of the porous dielectric layer is exposed through the gap and an upper surface of the conductive layer is protected by the cap layer, and performing a heat treatment to burn out a pore filler of the porous dielectric layer through the exposed upper surface of the porous dielectric layer.

Abstract: A temperature measurement system includes at least one temperature measurement probe. The at least one temperature measurement probe includes at least one hollow filament configured to emit thermal radiation in a predetermined and substantially continuous wavelength band at least partially representative of a temperature of the at least one hollow filament. The at least one hollow filament has a first diameter and a first emissivity. The at least one temperature measurement probe also includes at least one thin filament extending within at least a portion of the at least one hollow filament. The at least one thin filament is configured to emit thermal radiation in a predetermined and substantially continuous wavelength band at least partially representative of a temperature of the at least one thin filament. The at least one thin filament has a second emissivity and a second diameter less than the first diameter.

Abstract: A binaural audio calibration method, system, and computer program product for using behavioral data and sensor data to calibrate binaural audio to a specific user and creating a personalized binaural audio which can lead to greater immersion and allow user attention to be more effectively controlled.

Abstract: The invention features a refrigerator cabinet door frame. The frame includes a thermally conductive outer frame, a thermally insulating inner frame member, and a sealing plate. The outer frame member includes a forward end having an outer surface that is disposed outside of a refrigerated cabinet with the frame mounted, and a rearward end defining a joint. The inner frame member includes a first end retained in the joint, and a second end. The sealing plate includes a first edge coupled to the outer frame member at the rearward end, forward of the joint, a second edge supported by the second end of the inner frame member, and a thermally conductive sealing surface. The first edge of the sealing plate is coupled to the outer frame member such that the sealing surface and the outer surface of the outer frame member together form a continuous heat transfer path.

Abstract: A method of forming a semiconductor device, includes forming a conductive layer in a recessed portion of a porous dielectric layer, partially removing a top portion of the conductive layer while maintaining a height of the porous dielectric layer, forming a conformal cap layer on the porous dielectric layer and the conductive layer in the recessed portion, polishing the conformal cap layer to form a gap in the conformal cap layer, such that an upper surface of the porous dielectric layer is exposed through the gap and an upper surface of the conductive layer is protected by the cap layer, and performing a heat treatment to burn out a pore filler of the porous dielectric layer through the exposed upper surface of the porous dielectric layer.

Abstract: A semiconductor device includes a porous dielectric layer formed on an interconnect layer and including a recessed portion, a conductive layer formed in the recessed portion, and a conformal cap layer formed on the porous dielectric layer and on the conductive layer in the recessed portion, an upper surface of the porous dielectric layer being exposed through a gap in the conformal cap layer. Porous dielectric material is protected by back-filled pore fillers or leave-in porogens from process integration such as chemical mechanical polishing (CMP). The pore fillers or porogens are removed after CMP and Cap process to achieve low capacitance. A self-aligned cap protects the conductor metal from exposing the severe conditions during the pore filler or porogen removal process.

Abstract: The invention features a refrigerator cabinet door frame. The frame includes a thermally conductive outer frame, a thermally insulating inner frame member, and a sealing plate. The outer frame member includes a forward end having an outer surface that is disposed outside of a refrigerated cabinet with the frame mounted, and a rearward end defining a joint. The inner frame member includes a first end retained in the joint, and a second end. The sealing plate includes a first edge coupled to the outer frame member at the rearward end, forward of the joint, a second edge supported by the second end of the inner frame member, and a thermally conductive sealing surface. The first edge of the sealing plate is coupled to the outer frame member such that the sealing surface and the outer surface of the outer frame member together form a continuous heat transfer path.

Abstract: A method of forming fully aligned vias in a semiconductor device, the method including forming a first level interconnect line embedded in a first interlevel dielectric (ILD), selectively depositing a dielectric on the first interlevel dielectric, laterally etching the selectively deposited dielectric, depositing a dielectric cap layer and a second level interlevel dielectric on top of the first interlevel dielectric, and forming a via opening.

Abstract: A method of forming fully aligned vias in a semiconductor device, the method including recessing a first level interconnect line below a first interlevel dielectric (ILD), laterally etching the exposed upper portion of the first interlevel dielectric bounding the recess, depositing a dielectric cap layer and a second level interlevel dielectric on top of the first interlevel dielectric, and forming a via opening.

Abstract: A method of forming fully aligned vias in a semiconductor device includes forming an Mx level interconnect line embedded in an Mx interlevel dielectric (ILD). The Mx level interconnect is recessed below the Mx interlevel dielectric or a dielectric is selectively deposited on the Mx interlevel dielectric. The method also includes laterally etching the exposed upper portion of the Mx interlevel dielectric bounding the recess or laterally etching the selectively deposited dielectric. A dielectric cap layer and an Mx+1 level interlevel dielectric is deposited on top of the Mx interlevel dielectric, and a via opening is formed.