Abstract: Plasma reaction apparatus having pre-seasoned showerheads and methods for pre-seasoning a showerhead of a plasma reaction apparatus are provided. In an embodiment, a method for seasoning a showerhead prior to installation in a plasma reaction apparatus comprises cleaning the showerhead, positioning the showerhead in a deposition chamber, and forming a continuous, substantially uniform protective layer on the showerhead.

Abstract: Methods for pre-seasoning a component of a plasma reaction apparatus and method for fabricating plasma reaction apparatuses are provided. In an embodiment, a method for seasoning a component of a plasma reaction apparatus comprises providing an organosilicon compound, applying the organosilicon compound to the component, removing carbon atoms from the organosilicon compound, and forming a continuous, substantially uniform protective layer on the component, wherein the protective layer comprises silicon from the organosilicon compound.

Abstract: Systems and methods employ functional instruments to close incisions and wounds using a suture knot in combination with a biocompatible material composition. The systems and methods are well suited for use, for example, at a vascular puncture site following a vascular access procedure.

Abstract: A disposable air freshener configured to be connected to a USB port of a computer or computer peripheral device. In one embodiment, the disposable air freshener comprises a casing fabricated from a plurality of sections that have generally the same shape. At least one of these sections is configured as scented cardboard. The disposable air freshener has a printed circuit board and a heating element electrically connected to the printed circuit board. A portion of the printed circuit board extends from the casing and is configured to be inserted into a USB port so that electrical power can be applied to the printed circuit board. The heating element generates heat when it receives electrical power from the printed circuit board. Thus, when electrical power is applied to the printed circuit board, the heating element generates heat which causes the scented cardboard to emit a pleasant scent or aroma. The casing of the air freshener can be configured to have almost any geometric shape, e.g.

Abstract: Embodiments of a plasma generator apparatus for ashing a work piece are provided. The apparatus includes a container adapted for continuous gas flow there through from an inlet end to an outlet end thereof. The container is fabricated of a dielectric material and adapted for ionization therein of a portion of at least one component of gas flowing therethrough. A gas flow distributor is configured to direct gas flow to a region within the container and a coil surrounds at least a portion of side walls of the container adjacent the region of the container to which the gas flow distributor directs gas flow. A radio frequency generator is coupled to the coil.

Abstract: Methods of using a plasma generator to ash a work piece is provided. In an exemplary embodiment, the method includes flowing gas that has a gaseous component able to form plasma under conditions of radio-frequency energy excitation into the container. A proportion of the gas is directed to a first region of the container to form a higher gas density in the first region of the container and a corresponding lower gas density in a second region of the container. Sufficient energy is applied to the gas in at least the first region to excite a proportion of the gaseous component able to form plasma.

Abstract: Methods for removing photoresist from a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, a method for removing a photoresist from a semiconductor substrate comprises the steps of exposing the semiconductor substrate and the photoresist to a first plasma formed from oxygen, forming an oxide layer on exposed regions of the semiconductor substrate, and subjecting the photoresist to a second plasma formed from oxygen and a fluorine-comprising gas, wherein the first plasma is not the second plasma.

Abstract: Systems and methods employ functional instruments to close incisions and wounds using a suture knot in combination with a biocompatible material composition. The systems and methods are well suited for use, for example, at a vascular puncture site following a vascular access procedure.

Abstract: The present invention is directed to a composition comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. Also disclosed is a tissue graft or implant comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. The composition and/or tissue graft or implant of the invention is usable in combination with seeded cells, a tissue growth factor, and/or a chemotactic agent to attract a desired cell.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.

Abstract: Direct communication between devices in a wireless network without going through a base station is described herein. Such communication may be possible by deviating from a transmission map to be broadcasted by the base station of the wireless network.

Abstract: A method and apparatus for identification of wireless devices based on signal characteristics. An embodiment of a method includes receiving a signal from a wireless device and generating a spectrogram of the received signal. The method further provides for identifying one or more regions of the spectrogram and processing the spectrogram to determine time, bandwidth, and density characteristics of the identified regions.

Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10–250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10–30% of the duty cycle.

Abstract: The present invention pertains to methods for removing unwanted material from a work piece. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer during semiconductor manufacturing. Methods involve implementing a hydrogen plasma operation with downstream mixing with an inert gas. The invention is effective at stripping photo-resist and removing residues from low-k dielectric material used in Damascene devices.

Abstract: The present invention is directed to a composition comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. Also disclosed is a tissue graft or implant comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. The composition and/or tissue graft or implant of the invention is usable in combination with seeded cells, a tissue growth factor, and/or a chemotactic agent to attract a desired cell.

Abstract: An interleaver and scheme for interleaving in which highly correlated bits are maximally separated. The scheme involves interleaving a set of bits to be delivered to a modulation system that utilizes a quantity of N carrier frequencies. A first block of N consecutive bits is assigned to each of N bins, on a one-bit-per-one-bin basis. The aforementioned assignment proceeds in a particular sequence. A second block of N consecutive bits is assigned to each of the N bins, on a one-bit-per-one-bin basis. The second block is assigned in the same sequence the first block was assigned. The second block is consecutive to the first block.

Abstract: This invention provides a stable process for depositing an antireflective layer. Helium gas is used to lower the deposition rate of plasma-enhanced silane oxide, silane oxynitride, and silane nitride processes. Helium is also used to stabilize the process, so that different films can be deposited. The invention also provides conditions under which process parameters can be controlled to produce antireflective layers with varying optimum refractive index, absorptive index, and thickness for obtaining the desired optical behavior.