Patents by Inventor David Cheung

David Cheung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to treat collagenous connective tissue for implant remodeled by host cells into living tissue
    Publication number: 20060127495
    Abstract: The invention relates to a method of treatment of collagenous connective tissue removed from a donor for implant into a recipient which is re-habited or re-colonized by host cells without an immune rejection and inflammatory reaction. After removal from the donor, the tissue is trimmed and thereafter soaked in a cold stabilizing solution having a temperature range of 4 to 10 degrees centigrade. The tissue is then soaked at a predetermined temperature in a polyglycol, salt, hydrogen peroxide, and phosphate buffer first solution of predetermined quantities and concentrations and of sufficient ionic strength to permit ground substances to dissociate such that the collagen fibers remain stable. The tissue is then soaked in an alcohol and water solution at a predetermined temperature for a sufficient period of time to remove the residue of the first solution.
    Type: Application
    Filed: January 19, 2006
    Publication date: June 15, 2006
    Inventor: David Cheung
  • Method to treat collagenous connective tissue for implant remodeled by host cells into living tissue
    Publication number: 20060127876
    Abstract: The invention relates to a method of treatment of collagenous connective tissue removed from a donor for implant into a recipient which is re-habited or re-colonized by host cells without an immune rejection and inflammatory reaction. After removal from the donor the tissue is trimmed and thereafter soaked in a cold stabilizing solution having a temperature range of 4 to 10 degrees centigrade. The tissue is then soaked at a predetermined temperature in a polyglycol, salt, hydrogen peroxide, and phosphate buffer first solution of predetermined quantities and concentrations and of sufficient ionic strength to permit ground substances to dissociate such that the collagen fibers remain stable. The tissue is then soaked in an alcohol and water solution at a predetermined temperature for a sufficient period of time to remove the residue of the first solution.
    Type: Application
    Filed: January 19, 2006
    Publication date: June 15, 2006
    Inventor: David Cheung
  • Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
    Patent number: 7023092
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
    Type: Grant
    Filed: April 29, 2004
    Date of Patent: April 4, 2006
    Assignee: Applied Materials Inc.
    Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
  • Method of depositing low k films
    Publication number: 20050260864
    Abstract: A silicon oxide layer is produced by plasma enhanced decomposition of an organosilicon compound to deposit films having a carbon content of at least 1% by atomic weight. An optional carrier gas may be introduced to facilitate the deposition process at a flow rate less than or equal to the flow rate of the organosilicon compounds. An oxygen rich surface may be formed adjacent the silicon oxide layer by temporarily increasing oxidation of the organosilicon compound.
    Type: Application
    Filed: January 27, 2004
    Publication date: November 24, 2005
    Inventors: Tzu-Fang Huang, Yung-Cheng Lu, Li-Qun Xia, Ellie Yieh, Wai-Fan Yau, David Cheung, Ralf Willecke, Kuowei Liu, Ju-Hyung Lee, Farhad Moghadam, Yeming Ma
  • Plasma processes for depositing low dielectric constant films
    Publication number: 20050191846
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
    Type: Application
    Filed: March 22, 2005
    Publication date: September 1, 2005
    Inventors: David Cheung, Wai-Fan Yau, Robert Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Poon
  • Plasma processes for depositing low dielectric constant films
    Patent number: 6930061
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas at a constant RF power level from about 10 W to about 200 W or a pulsed RF power level from about 20 W to about 500 W. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
    Type: Grant
    Filed: August 26, 2003
    Date of Patent: August 16, 2005
    Assignee: Applied Materials Inc.
    Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
  • Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
    Publication number: 20050156317
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
    Type: Application
    Filed: February 11, 2005
    Publication date: July 21, 2005
    Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Lu
  • Muscle-based grafts/implants
    Publication number: 20050152881
    Abstract: The present invention is directed to a composition comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. Also disclosed is a tissue graft or implant comprising a matrix suitable for implantation in humans, comprising defatted, shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier and dried in a predetermined shape. The composition and/or tissue graft or implant of the invention is usable in combination with seeded cells, a tissue growth factor, and/or a chemotactic agent to attract a desired cell.
    Type: Application
    Filed: March 5, 2004
    Publication date: July 14, 2005
    Inventors: C. Mills, John Bianchi, Michael Roberts, David Cheung, Chandrasekaran Nataraj, John Howell
  • Matrix composition for human grafts/implants
    Publication number: 20050152880
    Abstract: The present invention is directed to an intermediate composition for producing a muscle tissue matrix suitable for implantation in humans, comprising shredded, allogeneic human muscle tissue that has been combined with an aqueous carrier, preferably a biocompatible acid solution, to form a muscle tissue slurry having a viscosity within the range of 1 centistoke to 20,000 centistokes measured at 25° C. In another aspect, the present invention is directed to a tissue implant comprising a human muscle tissue matrix.
    Type: Application
    Filed: January 9, 2004
    Publication date: July 14, 2005
    Inventors: C. Mills, John Bianchi, Michael Roberts, David Cheung, Chandrasekaran Nataraj, John Howell
  • Plasma processes for depositing low dielectric constant films
    Patent number: 6869896
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
    Type: Grant
    Filed: August 26, 2003
    Date of Patent: March 22, 2005
    Assignee: Applied Materials, Inc.
    Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
  • CVD plasma assisted low dielectric constant films
    Publication number: 20050059264
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
    Type: Application
    Filed: October 5, 2004
    Publication date: March 17, 2005
    Inventors: David Cheung, Wai-Fan Yau, Robert Mandal
  • Integrated low k dielectrics and etch stops
    Publication number: 20050023694
    Abstract: A method of depositing and etching dielectric layers having low dielectric constants and etch rates that vary by at least 3:1 for formation of horizontal interconnects. The amount of carbon or hydrogen in the dielectric layer is varied by changes in deposition conditions to provide low k dielectric layers that can replace etch stop layers or conventional dielectric layers in damascene applications. A dual damascene structure having two or more dielectric layers with dielectric constants lower than about 4 can be deposited in a single reactor and then etched to form vertical and horizontal interconnects by varying the concentration of a carbon:oxygen gas such as carbon monoxide. The etch gases for forming vertical interconnects preferably comprises CO and a fluorocarbon, and CO is preferably excluded from etch gases for forming horizontal interconnects.
    Type: Application
    Filed: August 24, 2004
    Publication date: February 3, 2005
    Inventors: Claes Bjorkman, Melissa Yu, Hongqing Shan, David Cheung, Wai-Fan Yau, Kuowei Liu, Nasreen Chapra, Gerald Yin, Farhad Moghadam, Judy Huang, Dennis Yost, Betty Tang, Yunsang Kim
  • Low dielectric constant film produced from silicon compounds comprising silicon-carbon bonds
    Publication number: 20040201103
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
    Type: Application
    Filed: April 29, 2004
    Publication date: October 14, 2004
    Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
  • CVD plasma assisted low dielectric constant films
    Patent number: 6800571
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilane or organosiloxane compound and an oxidizing gas at a low RF power level from 10-250 W. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organosilane film is produced by reaction of methylsilane, CH3SiH3, or dimethylsilane, (CH3)2SiH2, and nitrous oxide, N2O, at an RF power level from about 10 to 200 W or a pulsed RF power level from about 20 to 250 W during 10-30% of the duty cycle.
    Type: Grant
    Filed: December 17, 2002
    Date of Patent: October 5, 2004
    Assignee: Applied Materials Inc.
    Inventors: David Cheung, Wai-Fan Yau, Robert R. Mandal
  • Method of depositing a low dielectric with organo silane
    Patent number: 6770556
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
    Type: Grant
    Filed: November 21, 2002
    Date of Patent: August 3, 2004
    Assignee: Applied Materials Inc.
    Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
  • Low dielectric constant film produced from silicon compounds comprising silicon-carbon bond
    Publication number: 20040147109
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
    Type: Application
    Filed: January 13, 2004
    Publication date: July 29, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
  • Method of improving moisture resistance of low dielectric constant films
    Patent number: 6743737
    Abstract: A method and apparatus for depositing a low dielectric constant film includes depositing a silicon oxide based film, preferably by reaction of an organosilicon compound and an oxidizing gas at a low RF power level from about 10 W to about 500 W, exposing the silicon oxide based film to water or a hydrophobic-imparting surfactant such as hexamethyldisilazane, and curing the silicon oxide based film at an elevated temperature. Dissociation of the oxidizing gas can be increased in a separate microwave chamber to assist in controlling the carbon content of the deposited film. The moisture resistance of the silicon oxide based films is enhanced.
    Type: Grant
    Filed: August 22, 2002
    Date of Patent: June 1, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Wai-Fan Yau, David Cheung, Nasreen Gazala Chopra, Yung-Cheng Lu, Robert Mandal, Farhad Moghadam
  • Plasma processes for depositing low dielectric constant films
    Patent number: 6734115
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
    Type: Grant
    Filed: August 27, 2002
    Date of Patent: May 11, 2004
    Assignee: Applied Materials Inc.
    Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon
  • Method of depositing a low K dielectric with organo silane
    Patent number: 6730593
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH3SiH3, and N2O.
    Type: Grant
    Filed: November 15, 2001
    Date of Patent: May 4, 2004
    Assignee: Applied Materials Inc.
    Inventors: Wai-Fan Yau, David Cheung, Shin-Puu Jeng, Kuowei Liu, Yung-Cheng Yu
  • Plasma processes for depositing low dielectric constant films
    Publication number: 20040082199
    Abstract: A method and apparatus for depositing a low dielectric constant film by reaction of an organosilicon compound and an oxidizing gas comprising carbon at a constant RF power level. Dissociation of the oxidizing gas can be increased prior to mixing with the organosilicon compound, preferably within a separate microwave chamber, to assist in controlling the carbon content of the deposited film. The oxidized organosilane or organosiloxane film has good barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organosilane or organosiloxane film may also be used as an etch stop and an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organosilane or organosiloxane films also provide excellent adhesion between different dielectric layers.
    Type: Application
    Filed: August 26, 2003
    Publication date: April 29, 2004
    Applicant: Applied Materials, Inc.
    Inventors: David Cheung, Wai-Fan Yau, Robert P. Mandal, Shin-Puu Jeng, Kuo-Wei Liu, Yung-Cheng Lu, Michael Barnes, Ralf B. Willecke, Farhad Moghadam, Tetsuya Ishikawa, Tze Wing Poon