Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a layer comprising a solid solution of Y2O3—ZrO2 and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.

Abstract: An article comprises a body having a coating. The coating comprises a Y-O-F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Abstract: An enhanced anodization method includes forming a porous anodization layer comprising columns of anodization layer material with pores between adjacent columns. The method further includes sealing the porous layer by forming a sealing layer at a top of the porous layer. The sealing layer may be formed by using a hybrid sealing process that combines, in any order, two or more of de-ionized (DI) water seal, Ni sealing, and, PTFE sealing. Alternatively, the sealing layer is formed by conformally coating the columns in the porous layer with one or more layers of a coating material. Further, the coating material may be surface-fluorinated to improve plasma resistance.

Abstract: An article comprises a body having a coating. The coating comprises a Y—O—F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Abstract: A chamber component for a processing chamber comprises a ceramic body consisting of a sintered ceramic material consisting essentially of one or more phase of Y2O3—ZrO2. The ceramic material consists essentially of 55-65 mol % Y2O3 and 35-45 mol % ZrO2.

Abstract: A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from the group consisting of YOxFy, YxAlyO, YxZryO and YxZryAlzO.

Abstract: Embodiments of the disclosure relate to articles, coated chamber components and methods of coating chamber components with a low volatile coating. The low volatile coating can include a rare earth metal-containing layer that coats all surfaces of a component (e.g., a high temperature heater).

Abstract: A semiconductor process chamber component including an article coated with a protective coating that may have Y2O3 at a concentration of about 10 molar % to about 65 molar % and SiO2 at a concentration of about 35 molar % to about 90 molar %.

Abstract: An article comprises a body having a coating. The coating comprises a M-O—F coating having a molar O/F ratio that is customized to future processing that the article may be exposed to.

Abstract: An article comprises a body having a coating. The coating comprises a M-O-F coating having a molar O/F ratio that is customized to future processing that the article may be exposed to.

Abstract: An article comprises a body having a coating. The coating comprises a M-O-F coating having a molar O/F ratio that is customized to future processing that the article may be exposed to.

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a rare earth metal-containing oxide layer and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.

Abstract: An article comprises a body having a coating. The coating comprises a Y—O—F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Abstract: An article comprises a body having a coating. The coating comprises a Y-O-F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Abstract: An article comprises a body having a coating. The coating comprises a Y—O—F coating or other yttrium-based oxy-fluoride coating generated either by performing a fluorination process on a yttrium-based oxide coating or an oxidation process on a yttrium-based fluorine coating.

Abstract: Disclosed herein are methods for fabricating layered ceramic materials via hot pressing. A method includes disposing a powder compact or a ceramic slurry onto a surface of an article, wherein the article is a chamber component of a processing chamber. The powder compact or ceramic slurry is hot pressed against the surface of the article by heating the article and the powder compact or ceramic slurry and applying a pressure of 15-100 Megapascals. The hot pressing sinters the powder compact or ceramic slurry into a sintered ceramic protective layer and bonds the sintered ceramic protective layer to the surface of the article.

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a rare earth metal-containing oxide layer and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.

Abstract: Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a layer comprising a solid solution of Y2O3—ZrO2 and uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.

Abstract: A multi-layer coating for a surface of an article comprises a diffusion barrier layer and an erosion resistant layer. The diffusion barrier layer may be a nitride film including but not limited to TiNx, TaNx, Zr3N4, and TiZrxNy. The erosion resistant layer may be a rare oxide film comprising YZrxOy. The diffusion barrier layer and the erosion resistant layer may be deposited on the article's surface using a thin film deposition technique including but not limited to, ALD, PVD, and CVD.

Abstract: A multi-component coating composition for a surface of a chamber component comprising at least one first film layer of a yttrium oxide coated onto the surface of the chamber component using an atomic layer deposition process and at least one second film layer of zirconium oxide coated onto the surface of the chamber component using an atomic layer deposition process, wherein the multi-component coating comprises YZrxOy.