Abstract: A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (“topographic selectivity”) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid.

Abstract: In one aspect, the invention includes a method of patterning a substrate. A film is formed over a substrate and comprises a plurality of individual molecules. The individual molecules comprise two ends with one of the two ends being directed toward the substrate and the other of the two ends being directed away from the substrate. Particle-adhering groups are bound to said other of the two ends of at least some of the individual molecules and a plurality of particles are adhered to the particle-adhering groups to form a mask over the substrate. The substrate is etched while the mask protects portions of the substrate. In another aspect, the invention encompasses a method of forming a field emission display. A material having a surface of exposed nitrogen-containing groups is formed over the substrate. At least one portion of the material is exposed to radiation while at least one other portion of the material is not exposed.

Abstract: A method of forming an extraction grid for field emitter tip structures is described. A conductive layer is deposited over an insulative layer formed over the field emitter tip structures. The conductive layer is milled using ion milling. Owing to topographical differences along an exposed surface of the conductive layer, ions strike the exposed surface at various angles of incidence. As etch rate from ion milling is dependent at least in part upon angle of incidence, a selectivity based on varying topography of the exposed surface (“topographic selectivity”) results in non-uniform removal of material thereof. In particular, portions of the conductive layer in near proximity to the field emitter tip structures are removed faster than portions of the conductive layer between emitter tip structures. Thus, portions of the insulative layer in near proximity to the field emitter tip structures may be exposed while leaving intervening portions of the conductive layer for forming the extraction grid.

Abstract: A method, composition, and article for patterning and depositioning a substrate employing a colloidal suspension includes the step of agitating the colloidal suspension to eliminate aggregations of colloidal particles in the substrate The colloidal suspension may include a plurality of colloidal particles in a suspension medium which may comprise deionized water, a resist such as photoresist, and a solvent.

Abstract: A method, composition, and article for patterning and depositioning a substrate employing a colloidal suspension includes the step of agitating the colloidal suspension to eliminate aggregations of colloidal particles in the substrate. The colloidal suspension may include a plurality of colloidal particles in a suspension medium which may comprise deionized water, a resist such as photoresist, and a solvent.

Abstract: Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comprising material joined with the first layer. The mixture, as applied, leaves an undesirable distribution of mask particles over the first surface. After application of the mixture to the second surface, the mask particles are laterally distributed over the first surface, into a desirable distribution by placing a particle-dispersing structure directly into the mixture on the second surface and moving the particle-dispersing structure laterally through the mixture on the second surface. In another embodiment, a mixture is formed on the substrate's second surface and includes a liquid component and a plurality of solid mask-forming components.

Abstract: In one aspect, the invention includes a method of patterning a substrate. A film is formed over a substrate and comprises a plurality of individual molecules. The individual molecules comprise two ends with one of the two ends being directed toward the substrate and the other of the two ends being directed away from the substrate. Particle-adhering groups are bound to said other of the two ends of at least some of the individual molecules and a plurality of particles are adhered to the particle-adhering groups to form a mask over the substrate. The substrate is etched while the mask protects portions of the substrate. In another aspect, the invention encompasses a method of forming a field emission display. A material having a surface of exposed nitrogen-containing groups is formed over the substrate. At least one portion of the material is exposed to radiation while at least one other portion of the material is not exposed.

Abstract: A method for creating emitters of a field emission device is provided. First, a hardmask layer is deposited on a substrate used to form emitters. On the hardmask layer, a photoresist layer is deposited. Islands of photoresist are exposed by an exposing energy through holes in a mask layer. The mask layer is removed and the substrate soft-baked in an oven having an atmosphere of basic gas. Following the soft-bake, the substrate is flood exposed, and then developed using conventional means, leaving behind hardened islands of exposed and baked photoresist. The hardmask layer is etched using the hardened islands as an etching barrier, and the substrate etched with a chemical etchant using the etched hardmask layer as an etching barrier. The etching continues until the substrate material below the etched hardmask layer is formed into an array of points of substrate. Once these emitter sites are formed, a field emission display having uniform emitters can be created.

Abstract: A method for creating emitters of a field emission device is provided. First, a hardmask layer is deposited on a substrate used to form emitters. On the hardmask layer, a photoresist layer is deposited. Islands of photoresist are exposed by an exposing energy through holes in a mask layer. The mask layer is removed and the substrate soft-baked in an oven having an atmosphere of basic gas. Following the soft-bake, the substrate is flood exposed, and then developed using conventional means, leaving behind hardened islands of exposed and baked photoresist. The hardmask layer is etched using the hardened islands as an etching barrier, and the substrate etched with a chemical etchant using the etched hardmask layer as an etching barrier. The etching continues until the substrate material below the etched hardmask layer is formed into an array of points of substrate. Once these emitter sites are formed, a field emission display having uniform emitters can be created.

Abstract: Aluminum containing films having an oxygen content within the films. The aluminum-containing film is formed by introducing hydrogen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

Abstract: In one aspect, the invention includes a method of patterning a substrate. A film is formed over a substrate and comprises a plurality of individual molecules. The individual molecules comprise two ends with one of the two ends being directed toward the substrate and the other of the two ends being directed away from the substrate. Particle-adhering groups are bound to said other of the two ends of at least some of the individual molecules and a plurality of particles are adhered to the particle-adhering groups to form a mask over the substrate. The substrate is etched while the mask protects portions of the substrate. In another aspect, the invention encompasses a method of forming a field emission display. A material having a surface of exposed nitrogen-containing groups is formed over the substrate. At least one portion of the material is exposed to radiation while at least one other portion of the material is not exposed.

Abstract: Methods of forming mask patterns and methods of forming field emitter tip masks are described. In one embodiment a first surface is provided over which a mask pattern is to be formed. A mixture comprising mask particles is applied to a second surface comprising material joined with the first layer. The mixture, as applied, leaves an undesirable distribution of mask particles over the first surface. After application of the mixture to the second surface, the mask particles are laterally distributed over the first surface, into a desirable distribution by placing a particle-dispersing structure directly into the mixture on the second surface and moving the particle-dispersing structure laterally through the mixture on the second surface. In another embodiment, a mixture is formed on the substrate's second surface and includes a liquid component and a plurality of solid mask-forming components.

Abstract: An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is forced by introducing hydrogen gas and oxygen gas along with aragon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

Abstract: A method for creating emitters of a field emission device is provided. First, a hardmask layer is deposited on a substrate used to form emitters. On the hardmask layer, a photoresist layer is deposited. Islands of photoresist are exposed by an exposing energy through holes in a mask layer. The mask layer is removed and the substrate soft-baked in an oven having an atmosphere of basic gas. Following the soft-bake, the substrate is flood exposed, and then developed using conventional means, leaving behind hardened islands of exposed and baked photoresist. The hardmask layer is etched using the hardened islands as an etching barrier, and the substrate etched with a chemical etchant using the etched hardmask layer as an etching barrier. The etching continues until the substrate material below the etched hardmask layer is formed into an array of points of substrate. Once these emitter sites are formed, a field emission display having uniform emitters can be created.

Abstract: A method for forming semiconductor devices involves defining a pattern of microspheres on a first structure and transferring that pattern of microspheres to a semiconductor structure. The microspheres may then be used as a mask to define features on the semiconductor structure. In this way, it is possible to form semiconductor devices without necessarily using a stepper. This may result in substantial capital savings in semiconductor manufacturing processes.

Abstract: An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The aluminum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.

Abstract: An aluminum-containing film having an oxygen content within the film. The aluminum-containing film is formed by introducing hydrogen gas and oxygen gas along with argon gas into a sputter deposition vacuum chamber during the sputter deposition of aluminum or aluminum alloys onto a semiconductor substrate. The alumininum-containing film so formed is hillock-free and has low resistivity, relatively low roughness compared to pure aluminum, good mechanical strength, and low residual stress.