Abstract: A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire.

Abstract: Methods for cleaning consolidatable material from substrates or from features that have been fabricated with the material include application of pressure, force, or a cleaning agent to the substrate or feature. The pressure, force, or cleaning agent may be applied in a variety of ways. The unconsolidated material that has been removed from the substrate or feature may also be collected, optionally filtered, and reused in a subsequent programmed material consolidation process.

Abstract: A semiconductor component includes a base die and a secondary die stacked on and bonded to the base die. The base die includes conductive vias which form an internal signal transmission system for the component, and allow the circuit side of the secondary die to be bonded to the back side of the base die. The component also includes an array of terminal contacts on the circuit side of the base die in electrical communication with the conductive vias. The component can also include an encapsulant on the back side of the base die, which substantially encapsulates the secondary die, and a polymer layer on the circuit side of the base die which functions as a protective layer, a rigidifying member and a stencil for forming the terminal contacts. A method for fabricating the component includes the step of bonding singulated secondary dice to base dice on a base wafer, or bonding a secondary wafer to the base wafer, or bonding singulated secondary dice to singulated base dice.

Abstract: A semiconductor component includes a semiconductor substrate having a substrate contact, and a through wire interconnect (TWI) bonded to the substrate contact. The through wire interconnect (TWI) includes a via through the substrate contact and the substrate, a wire in the via bonded to the substrate contact, and a contact on the wire. A stacked semiconductor component includes the semiconductor substrate, and a second semiconductor substrate stacked on the substrate and bonded to a through wire interconnect on the substrate. A method for fabricating a semiconductor component with a through wire interconnect includes the steps of providing a semiconductor substrate with a substrate contact, forming a via through the substrate contact and part way through the substrate, placing the wire in the via, bonding the wire to the substrate contact, and then thinning the substrate from a second side to expose a contact on the wire.

Abstract: An inventive method in an integrated circuit (IC) manufacturing process for using data regarding repair procedures conducted on ICs at probe to determine whether any further repairs will be conducted later in the manufacturing process includes storing the data in association with a fuse ID of each of the ICs. The ID codes of the ICs are automatically read, for example, at an opens/shorts test during the manufacturing process. The data stored in association with the ID codes of the ICs is then accessed, and additional repair procedures the ICs may undergo are selected in accordance with the accessed data. Thus, for example, the accessed data may indicate that an IC is unrepairable, so the IC can proceed directly to a scrap bin without having to be queried to determine whether it is repairable, as is necessary in traditional IC manufacturing processes.

Abstract: Microelectronic imaging units and methods for manufacturing a plurality of imaging units at the wafer level are disclosed herein. In one embodiment, a method for manufacturing a plurality of imaging units includes providing an imager workpiece having a plurality of imaging dies including integrated circuits, external contacts electrically coupled to the integrated circuits, and image sensors operably coupled to the integrated circuits. The individual image sensors include at least one dark current pixel at a perimeter portion of the image sensor. The method includes depositing a cover layer onto the workpiece and over the image sensors. The method further includes patterning and selectively developing the cover layer to form discrete volumes of cover layer material over corresponding image sensors. The discrete volumes of cover layer material have sidewalls aligned with an inboard edge of the individual dark current pixels such that the dark current pixels are not covered by the discrete volumes.

Abstract: A socket contact formation process comprises forming a contact head from a conductive material, forming a contact body from a semiconductive material configured to be electrically conductive; and joining the contact head and the contact body.

Abstract: Methods of forming semiconductor packages include immersing a semiconductor device assembly in a liquid photopolymerizable resin including a plurality of discrete particles dispersed therethrough, and selectively at least partially curing portions of the resin adjacent at least one semiconductor die of the semiconductor device assembly. In some embodiments, the semiconductor device assembly may be immersed in a second liquid photopolymerizable resin having at least one physical property differing from the first liquid photopolymerizable resin, and the second liquid photopolymerizable resin may be selectively at least partially cured. Furthermore, the semiconductor die may have an active surface including an array of optically interactive semiconductor devices, and portions of the liquid photopolymerizable resin surrounding a periphery of the array may be selectively at least partially cured to form a substantially opaque support structure.

Abstract: Stress and force management techniques for a semiconductor die to help compensate for stress within the semiconductor die and to help compensate for forces applied to the semiconductor die to minimize damage thereto.

Abstract: Devices include at least one semiconductor die including at least one surface that is at least partially covered by a photopolymer material. The photopolymer material includes a plurality of discrete particles dispersed through a polymerized matrix. In some embodiments, the photopolymer material may cover at least a portion of each of a plurality of semiconductor dice attached to a substrate. Furthermore, the photopolymer material may cover only a portion of each of the plurality of semiconductor dice, and another photopolymer material may cover another portion of each of the plurality of semiconductor dice.

Abstract: A method for fabricating a semiconductor component includes the steps of providing a substrate having a contact on a circuit side thereof, forming an opening from a backside of the substrate to the contact, forming a conductive via in the opening in electrical contact with a surface of the contact, and forming a second contact on the back side in electrical communication with the conductive via. The method can also include the steps of thinning the substrate from the backside, forming insulating layers on the circuit side and the backside, and forming a conductor and terminal contact on the circuit side in electrical communication with the conductive via. A semiconductor component includes the contact on the circuit side, the conductive via in electrical contact with the contact, and the second contact on the backside in electrical communication with the conductive via. The semiconductor component can also include the insulating layers, the conductor and the terminal contact.

Abstract: A backside method for fabricating a semiconductor component with a conductive interconnect includes the step of providing a semiconductor substrate having a circuit side, a backside, and a substrate contact on the circuit side. The method also includes the steps of forming a substrate opening from the backside to the substrate contact, and then bonding the conductive interconnect to an inner surface of the substrate contact. A system for performing the method includes the semiconductor substrate, a thinning system for thinning the semiconductor substrate, an etching system for forming the substrate opening, and a bonding system for bonding the conductive interconnect to the substrate contact. The semiconductor component can be used to form module components, underfilled components, stacked components, and image sensor semiconductor components.

Abstract: Microelectronic imagers and methods for packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imaging unit can include a microelectronic die, an image sensor, an integrated circuit electrically coupled to the image sensor, and a bond-pad electrically coupled to the integrated circuit. An electrically conductive through-wafer interconnect extends through the die and is in contact with the bond-pad. The interconnect can include a passage extending completely through the substrate and the bond-pad with conductive fill material at least partially disposed in the passage. An electrically conductive support member is carried by and projects from the bond-pad. A cover over the image sensor is coupled to the support member.

Abstract: Microelectronic imaging devices and methods of packaging microelectronic imaging devices are disclosed herein. In one embodiment, a microelectronic imaging device includes a microelectronic die having an integrated circuit, an image sensor electrically coupled to the integrated circuit, and a plurality of bond-pads electrically coupled to the integrated circuit. The imaging device further includes a cover over the image sensor and a plurality of interconnects in and/or on the cover that are electrically coupled to corresponding bond-pads of the die. The interconnects provide external electrical contacts for the bond-pads of the die. The interconnects can extend through the cover or along a surface of the cover.

Abstract: Microelectronic imager assemblies comprising a workpiece including a substrate and a plurality of imaging dies on and/or in the substrate. The substrate includes a front side and a back side, and the imaging dies comprise imaging sensors at the front side of the substrate and external contacts operatively coupled to the image sensors. The microelectronic imager assembly further comprises optics supports superimposed relative to the imaging dies. The optics supports can be directly on the substrate or on a cover over the substrate. Individual optics supports can have (a) an opening aligned with one of the image sensors, and (b) a bearing element at a reference distance from the image sensor. The microelectronic imager assembly can further include optical devices mounted or otherwise carried by the optics supports.

Abstract: A compliant contact pin assembly and a contactor card and methods for testing therewith are provided. The compliant contact pin assembly includes a contact pin formed from a portion of a substrate with the contact pin compliantly held suspended within the substrate by a compliant coupling structure. The suspension within the substrate results in a compliant deflection orthogonal to the plane of the substrate. The contact pin assembly is formed by generally thinning the substrate around the contact pin location and then specifically thinning the substrate immediately around the contact pin location for forming a void. The contact pin is compliantly coupled, in one embodiment by compliant coupling material, and in another embodiment by compliantly flexible portions of the substrate.

Abstract: Methods of packaging microelectronic imagers and packaged microelectronic imagers. An embodiment of such a method can include providing an imager workpiece having a plurality of imager dies arranged in a die pattern and providing a cover substrate through which a desired radiation can propagate. The imager dies include image sensors and integrated circuitry coupled to the image sensors. The method further includes providing a spacer having a web that includes an adhesive and has openings arranged to be aligned with the image sensors. For example, the web can be a film having an adhesive coating, or the web itself can be a layer of adhesive. The method continues by assembling the imager workpiece with the cover substrate such that (a) the spacer is between the imager workpiece and the cover substrate, and (b) the openings are aligned with the image sensors. The attached web is not cured after the imager workpiece and the cover substrate have both been adhered to the web.

Abstract: A method for fabricating a semiconductor component with a through wire interconnect includes the step of providing a substrate having a circuit side, a back side, and a through via. The method also includes the steps of: threading a wire through the via, forming a contact on the wire on the back side, forming a bonded contact on the wire on the circuit side, and then severing the wire from the bonded contact. The through wire interconnect includes the wire in the via, the contact on the back side and the bonded contact on the circuit side. The contact on the back side, and the bonded contact on the circuit side, permit multiple components to be stacked with electrical connections between adjacent components. A system for performing the method includes the substrate with the via, and a wire bonder having a bonding capillary configured to thread the wire through the via, and form the contact and the bonded contact.

Abstract: Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.

Abstract: Microelectronic imagers with prefabricated housings and methods of packaging microelectronic imagers are disclosed herein. In one embodiment, a microelectronic imager can include a microelectronic die, an image sensor, and an integrated circuit operatively coupled to the integrated circuit. The microelectronic imager also includes an optic unit having an optic member. The microelectronic imager further includes a prefabricated housing having a first mounting site and a second mounting site. The die is seated within the housing at the first mounting site and the optics unit is seated within the housing at the second mounting site in a fixed, preset position in which the optic member is situated at a desired location relative to the image sensor.