Patents by Inventor David J. Lee

David J. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12210650
    Abstract: In an embodiment, a data platform creates an application in a data-provider account. The application includes one or more APIs corresponding to one or more underlying code blocks. The data platform shares provider data with the application in the data-provider account, and also installs, in a data-consumer account, an application instance of the application. The application instance includes one or more APIs corresponding to the one or more APIs in the application in the data-provider account. The data platform shares consumer data with the application instance in the data-consumer account, and invokes one or more of the APIs of the application instance to execute respective associated underlying code blocks, which are not visible to the data-consumer account. The data platform also saves output of the one or more respective associated underlying code blocks locally within the data-consumer account.
    Type: Grant
    Filed: September 6, 2023
    Date of Patent: January 28, 2025
    Assignee: Snowflake Inc.
    Inventors: Artin Avanes, Thierry Cruanes, Monica J. Holboke, Allison Waingold Lee, Subramanian Muralidhar, David Schultz
  • Publication number: 20250023015
    Abstract: Systems and methods are provided for managing anisotropic expansion of silicon-dominant anodes. An example battery may include a cathode, an electrolyte, and an anode, with the anode including a current collector and an active material on a surface of the current collector. One or more characteristics of the current collector may ensure meeting particular expansion criteria. The expansion criteria may include expanding less in one of x-y directions and z-direction while expanding more in other one of the x-y directions and the z-direction, the x-y directions being parallel to the surface of the current collector and perpendicular to a thickness of the active material. The one or more characteristics include at least material of the current collector.
    Type: Application
    Filed: July 15, 2024
    Publication date: January 16, 2025
    Inventors: Giulia Canton, Benjamin Park, Fred Bonhomme, David J. Lee, Ian Browne
  • Publication number: 20240411085
    Abstract: Disclosed herein are approaches for adjusting local refractive index for photonics IC systems using selective waveguide ion implantation. In one approach, a method may include depositing an optical device film atop a base layer, patterning the optical device film into a plurality of sections, and implanting a first section of the plurality of sections of the optical device film to adjust a refractive index of the first section.
    Type: Application
    Filed: June 12, 2023
    Publication date: December 12, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Qintao ZHANG, Eric Jay SIMMONS, Mayrita ARRANDALE, Judeth Campbell SOUKUP, David J. LEE, Samphy HONG
  • Patent number: 12132192
    Abstract: Systems and methods are provided for high volume roll-to-roll direct coating of electrodes for silicon-dominant anode cells. A slurry that includes silicon particles and a binder material may be applied to a current collector film, and the slurry may be processed to form a precursor composite film coated on the current collector film. The current collector film with the coated precursor composite film may be rolled into a precursor composite roll. A heat treatment may be applied to the current collector film with the coated precursor composite film in an environment including nitrogen gas, to convert the coated precursor composite film to a pyrolyzed composite film coated on the current collector film. The heat treatment may include applying the heat treatment to the precursor composite roll in whole and/or applying the heat treatment to the current collector film with the coated precursor composite film as it is continuously fed.
    Type: Grant
    Filed: February 27, 2023
    Date of Patent: October 29, 2024
    Assignee: ENEVATE CORPORATION
    Inventors: Fred Bonhomme, Benjamin Park, Kirk Shockley, Giulia Canton, David J. Lee
  • Patent number: 12087949
    Abstract: Systems and methods for batteries comprising a cathode, an electrolyte, and an anode, wherein sacrificial salts and prelithiation reagents are added to the cathode as functional additives for electrochemical prelithiation.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: September 10, 2024
    Assignee: Enevate Corporation
    Inventors: Rahul Kamath, Frederic Bonhomme, Qian Huang, Heidi Anderson, Ian Browne, David J. Lee, Sanjaya Perera, Younes Ansari
  • Publication number: 20240255700
    Abstract: Disclosed herein are approaches for forming a uniform film with reduced surface roughness for photonic applications. One method includes providing a workpiece including a contact etch stop layer (CESL) over a device layer, patterning the CESL to expose an upper surface of the device layer in a waveguide target area, and patterning a waveguide from a dielectric film formed over the waveguide target area. The method may further include directing ions into an upper surface of the waveguide using a high-temperature ion implant to decrease a surface roughness of the upper surface of the waveguide.
    Type: Application
    Filed: January 30, 2023
    Publication date: August 1, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Eric Jay Simmons, Qintao Zhang, Wei Zou, Andrew Michael Waite, Jared Forrest Traynor, Miguel Sam Fung, Vincent V. Granuzzo, David J. Lee
  • Patent number: 12046473
    Abstract: Disclosed herein are methods for backside wafer dopant activation using a low-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a low-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.
    Type: Grant
    Filed: June 25, 2021
    Date of Patent: July 23, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Qintao Zhang, Samphy Hong, Vittoriano Ruscio, Wei Zou, David J. Lee
  • Patent number: 12040478
    Abstract: Systems and methods for anisotropic expansion of silicon-dominant anodes may include a cathode, an electrolyte, and an anode, where the anode may include a current collector and an active material on the current collector. An expansion of the anode during operation may be configured by a roughness and/or thickness of the current collector, a metal used for the current collector, and/or a lamination process that adheres the active material to the current collector. The expansion of the anode may be more anisotropic for thicker current collectors. A thicker current collector may be 10 ?m thick or greater. The expansion of the anode may be more anisotropic for more rigid materials used for the current collector. A more rigid current collector may include nickel and a less rigid current collector may include copper. The expansion of the anode may be more anisotropic for a rougher surface current collector.
    Type: Grant
    Filed: November 5, 2019
    Date of Patent: July 16, 2024
    Assignee: ENEVATE CORPORATION
    Inventors: Giulia Canton, Benjamin Park, Fred Bonhomme, David J. Lee, Ian Browne
  • Publication number: 20240186482
    Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.
    Type: Application
    Filed: February 12, 2024
    Publication date: June 6, 2024
    Inventors: MONIKA CHHORNG, DAVID J. LEE, RAHUL KAMATH
  • Publication number: 20240128131
    Abstract: A camera may capture reflected light from the surface of the wafer during a semiconductor process that adds or removes material from the wafer, such as an etch process. To accurately determine an endpoint for the process, a camera sampling rate and light source intensity may be optimized in the process recipe. Optimizing the light source intensity may include characterizing light intensities that will be reflected from the waiver using an image of the wafer. Pixel intensities may be used to adjust the light source intensity to compensate for more complex wafer patterns. Optimizing the camera sampling rates may include nondestructively rotating a view of the wafer and converting the sampled intensities to the frequency domain. The camera sampling rate may be increased or decreased to remove spatial noise from the image without oversampling unnecessarily. These optimized parameters may then generate a clean, repeatable trace for endpoint determination.
    Type: Application
    Filed: October 14, 2022
    Publication date: April 18, 2024
    Applicant: Applied Materials, Inc.
    Inventors: Avishay Vaxman, Qintao Zhang, Jeffrey P. Koch, David P. Surdock, Wayne R. Swart, David J. Lee, Samphy Hong, Aldrin Bernard Vincent Eddy, Daniel G. Deyo
  • Patent number: 11901543
    Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.
    Type: Grant
    Filed: September 15, 2022
    Date of Patent: February 13, 2024
    Assignee: ENEVATE CORPORATION
    Inventors: Monika Chhorng, David J. Lee, Rahul Kamath
  • Patent number: 11901500
    Abstract: In some embodiments, an electrode can include a first and second conductive layer. At least one of the first and second conductive layers can include porosity configured to allow electrolyte to flow therethrough. The electrode can also include an electrochemically active layer having electrochemically active material sandwiched between the first and second conductive layers. The electrochemically active layer can be in electrical communication with the first and second conductive layers.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: February 13, 2024
    Assignee: Enevate Corporation
    Inventors: Xiaohua Liu, Giulia Canton, David J. Lee, Shiang Teng, Benjamin Yong Park
  • Patent number: 11798982
    Abstract: Methods may include providing a device structure including a well formed in an epitaxial layer, and forming a plurality of shielding layers in the device structure, wherein at least one shielding layer is formed between a pair of adjacent sacrificial gates of a plurality of sacrificial gates. The method may further include forming a contact over the at least one shielding layer, forming a fill layer over the contact, and forming a plurality of trenches into the device structure, wherein at least one trench of the plurality of trenches is formed between a pair of adjacent shielding layers of the plurality of shielding layers, and wherein the at least one trench of the plurality of trenches is defined in part by a sidewall of the fill layer. The method may further include forming a gate structure within the at least one trench of the plurality of trenches.
    Type: Grant
    Filed: April 23, 2021
    Date of Patent: October 24, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Qintao Zhang, Samphy Hong, Jason Appell, David J. Lee
  • Patent number: 11764350
    Abstract: Systems and methods for anisotropic expansion of silicon-dominant anodes may include a cathode, an electrolyte, and an anode, where the anode may include a current collector and an active material on the current collector. An expansion of the anode during operation may be configured by a thickness of the current collector. The expansion of the anode may be more anisotropic for thicker current collectors. A thicker current collector may be 10 ?m thick or greater. The expansion of the anode may be more anisotropic for more rigid materials used for the current collector. A more rigid current collector may include nickel and a less rigid current collector may include copper. The expansion of the anode may be more anisotropic for a rougher surface current collector.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: September 19, 2023
    Assignee: ENEVATE CORPORATION
    Inventors: Giulia Canton, Benjamin Park, Fred Bonhomme, David J. Lee, Ian Browne
  • Patent number: 11728468
    Abstract: Systems and methods for anisotropic expansion of silicon-dominant anodes may include a cathode, an electrolyte, and an anode, where the anode may include a current collector and an active material on the current collector. An expansion of the anode during operation may be configured by a metal used for the current collector, and/or a lamination process that adheres the active material to the current collector. The expansion of the anode may be more anisotropic for thicker current collectors. A thicker current collector may be 10 ?m thick or greater. The expansion of the anode may be more anisotropic for more rigid materials used for the current collector. A more rigid current collector may include nickel and a less rigid current collector may include copper. The expansion of the anode may be more anisotropic for a rougher surface current collector.
    Type: Grant
    Filed: April 10, 2020
    Date of Patent: August 15, 2023
    Assignee: ENEVATE CORPORATION
    Inventors: Giulia Canton, Benjamin Park, Fred Bonhomme, David J. Lee, Ian Browne
  • Publication number: 20230238507
    Abstract: Systems and methods are provided for high volume roll-to-roll direct coating of electrodes for silicon-dominant anode cells. A slurry that includes silicon particles and a binder material may be applied to a current collector film, and the slurry may be processed to form a precursor composite film coated on the current collector film. The current collector film with the coated precursor composite film may be rolled into a precursor composite roll. A heat treatment may be applied to the current collector film with the coated precursor composite film in an environment including nitrogen gas, to convert the coated precursor composite film to a pyrolyzed composite film coated on the current collector film. The heat treatment may include applying the heat treatment to the precursor composite roll in whole and/or applying the heat treatment to the current collector film with the coated precursor composite film as it is continuously fed.
    Type: Application
    Filed: February 27, 2023
    Publication date: July 27, 2023
    Inventors: Fred Bonhomme, Benjamin Park, Kirk Shockley, Giulia Canton, David J. Lee
  • Patent number: 11695106
    Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.
    Type: Grant
    Filed: April 4, 2022
    Date of Patent: July 4, 2023
    Assignee: ENEVATE CORPORATION
    Inventors: Monika Chhorng, David J. Lee, Rahul Kamath
  • Patent number: 11695104
    Abstract: Systems and methods for improved performance of silicon anode containing cells through formation may include a cathode, electrolyte, and silicon containing anode. The battery may be subjected to a formation process comprising one or more cycles of: charging the battery at a 1 C rate to 3.8 volts or greater until a current in the battery reaches C/20, and discharging the battery to 2.5 volts or less. The battery may comprise a lithium ion battery. The electrolyte may comprise a liquid, solid, or gel. The anode may comprise greater than 70% silicon. The battery may be discharged until the current reaches 0.2 C. The battery may be discharged at a 1 C rate or at a 0.2 C rate. The battery may be in a rest period between the charge and discharge.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: July 4, 2023
    Assignee: ENEVATE CORPORATION
    Inventors: Uday S. Kasavajjula, Benjamin Park, David J. Lee, SungWon Choi
  • Patent number: 11695060
    Abstract: Disclosed herein are methods for forming MOSFETs. In some embodiments, a method may include providing a device structure including a plurality of trenches, and forming a mask over the device structure including within each of the plurality of trenches and over a top surface of the device structure. The method may further include removing the mask from within the trenches, wherein the mask remains along the top surface of the device structure, and implanting the device structure to form a treated layer along a bottom of the trenches. In some embodiments, the method may further include forming a gate oxide layer along a sidewall of each of the trenches and along the bottom of the trenches, wherein a thickness of the oxide along the bottom of the trenches is greater than a thickness of the oxide along the sidewall of each of the trenches.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: July 4, 2023
    Assignee: Applied Materials, Inc.
    Inventors: Qintao Zhang, Samphy Hong, Wei Zou, Lei Zhong, David J. Lee, Felix Levitov
  • Publication number: 20230187604
    Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.
    Type: Application
    Filed: September 15, 2022
    Publication date: June 15, 2023
    Inventors: MONIKA CHHORNG, DAVID J. LEE, RAHUL KAMATH