Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.

Abstract: Systems and methods for silosilazanes, silosiloxanes, and siloxanes as additives for silicon-dominant anodes in a battery that may include a cathode, an electrolyte, and an anode active material. The active material may comprise 50% or more silicon as well as an additive including one or more of: silosilazane, polysilosilazane, silicon oxycarbides, and polyorganosiloxane. The active material may comprise a film with a thickness between 10 and 80 microns. The film may have a conductivity of 1 S/cm or more. The active material may comprise between 50% and 95% silicon. The active material may be held together by a pyrolyzed carbon film. The anode may comprise lithium, sodium, potassium, silicon, and/or mixtures and combinations thereof. The battery may comprise a lithium ion battery. The electrolyte may comprise a liquid, solid, or gel.

Abstract: Disclosed herein are approaches for forming a uniform film with reduced surface roughness for photonic applications. One method includes providing a workpiece including a contact etch stop layer (CESL) over a device layer, patterning the CESL to expose an upper surface of the device layer in a waveguide target area, and patterning a waveguide from a dielectric film formed over the waveguide target area. The method may further include directing ions into an upper surface of the waveguide using a high-temperature ion implant to decrease a surface roughness of the upper surface of the waveguide.

Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.

Abstract: A camera may capture reflected light from the surface of the wafer during a semiconductor process that adds or removes material from the wafer, such as an etch process. To accurately determine an endpoint for the process, a camera sampling rate and light source intensity may be optimized in the process recipe. Optimizing the light source intensity may include characterizing light intensities that will be reflected from the waiver using an image of the wafer. Pixel intensities may be used to adjust the light source intensity to compensate for more complex wafer patterns. Optimizing the camera sampling rates may include nondestructively rotating a view of the wafer and converting the sampled intensities to the frequency domain. The camera sampling rate may be increased or decreased to remove spatial noise from the image without oversampling unnecessarily. These optimized parameters may then generate a clean, repeatable trace for endpoint determination.

Abstract: Systems and methods are provided for high volume roll-to-roll direct coating of electrodes for silicon-dominant anode cells. A system for continuous roll-to-roll electrode processing may include one or more components configured for receiving a plurality of precursor composite rolls, with each precursor composite roll including a precursor composite film coated on a current collector, and a heat treatment oven configured for applying heat treatment concurrently to the plurality of precursor composite rolls, to convert the precursor composite film in each precursor composite roll into a pyrolyzed composite film on the current collector. The system is configured for processing the plurality of precursor composite rolls in a continuous manner.

Abstract: Systems and methods are provided for high volume roll-to-roll transfer lamination of electrodes for silicon-dominant anode cells.

Abstract: Systems and methods for batteries comprising a cathode, an electrolyte, and an anode, wherein sacrificial salts and prelithiation reagents are added to the cathode as functional additives for electrochemical prelithiation.

Abstract: Systems and methods are provided for managing anisotropic expansion of silicon-dominant anodes. An example battery may include a cathode, an electrolyte, and an anode, with the anode including a current collector and an active material on a surface of the current collector. One or more characteristics of the current collector may ensure meeting particular expansion criteria. The expansion criteria may include expanding less in one of x-y directions and z-direction while expanding more in other one of the x-y directions and the z-direction, the x-y directions being parallel to the surface of the current collector and perpendicular to a thickness of the active material. The one or more characteristics include at least material of the current collector.

Abstract: Disclosed herein are approaches for adjusting local refractive index for photonics IC systems using selective waveguide ion implantation. In one approach, a method may include depositing an optical device film atop a base layer, patterning the optical device film into a plurality of sections, and implanting a first section of the plurality of sections of the optical device film to adjust a refractive index of the first section.

Abstract: Systems and methods are provided for high volume roll-to-roll direct coating of electrodes for silicon-dominant anode cells. A slurry that includes silicon particles and a binder material may be applied to a current collector film, and the slurry may be processed to form a precursor composite film coated on the current collector film. The current collector film with the coated precursor composite film may be rolled into a precursor composite roll. A heat treatment may be applied to the current collector film with the coated precursor composite film in an environment including nitrogen gas, to convert the coated precursor composite film to a pyrolyzed composite film coated on the current collector film. The heat treatment may include applying the heat treatment to the precursor composite roll in whole and/or applying the heat treatment to the current collector film with the coated precursor composite film as it is continuously fed.

Abstract: Systems and methods for batteries comprising a cathode, an electrolyte, and an anode, wherein sacrificial salts and prelithiation reagents are added to the cathode as functional additives for electrochemical prelithiation.

Abstract: Disclosed herein are approaches for forming a uniform film with reduced surface roughness for photonic applications. One method includes providing a workpiece including a contact etch stop layer (CESL) over a device layer, patterning the CESL to expose an upper surface of the device layer in a waveguide target area, and patterning a waveguide from a dielectric film formed over the waveguide target area. The method may further include directing ions into an upper surface of the waveguide using a high-temperature ion implant to decrease a surface roughness of the upper surface of the waveguide.

Abstract: Disclosed herein are methods for backside wafer dopant activation using a low-temperature ion implant. In some embodiments, a method may include forming a semiconductor device atop a first main side of a substrate, and performing a low-temperature ion implant to a second main side of the substrate, wherein the first main side of the substrate is opposite the second main side of the substrate. The method may further include performing a second ion implant to the second main side of the substrate to form a collector layer.

Abstract: Systems and methods for anisotropic expansion of silicon-dominant anodes may include a cathode, an electrolyte, and an anode, where the anode may include a current collector and an active material on the current collector. An expansion of the anode during operation may be configured by a roughness and/or thickness of the current collector, a metal used for the current collector, and/or a lamination process that adheres the active material to the current collector. The expansion of the anode may be more anisotropic for thicker current collectors. A thicker current collector may be 10 ?m thick or greater. The expansion of the anode may be more anisotropic for more rigid materials used for the current collector. A more rigid current collector may include nickel and a less rigid current collector may include copper. The expansion of the anode may be more anisotropic for a rougher surface current collector.

Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.

Abstract: A camera may capture reflected light from the surface of the wafer during a semiconductor process that adds or removes material from the wafer, such as an etch process. To accurately determine an endpoint for the process, a camera sampling rate and light source intensity may be optimized in the process recipe. Optimizing the light source intensity may include characterizing light intensities that will be reflected from the waiver using an image of the wafer. Pixel intensities may be used to adjust the light source intensity to compensate for more complex wafer patterns. Optimizing the camera sampling rates may include nondestructively rotating a view of the wafer and converting the sampled intensities to the frequency domain. The camera sampling rate may be increased or decreased to remove spatial noise from the image without oversampling unnecessarily. These optimized parameters may then generate a clean, repeatable trace for endpoint determination.

Abstract: Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <600° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material yields silicon constituting between 86% and 97% of weight of the formed anode after pyrolysis. The carbon-based additive yields carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis.

Abstract: In some embodiments, an electrode can include a first and second conductive layer. At least one of the first and second conductive layers can include porosity configured to allow electrolyte to flow therethrough. The electrode can also include an electrochemically active layer having electrochemically active material sandwiched between the first and second conductive layers. The electrochemically active layer can be in electrical communication with the first and second conductive layers.

Abstract: Methods may include providing a device structure including a well formed in an epitaxial layer, and forming a plurality of shielding layers in the device structure, wherein at least one shielding layer is formed between a pair of adjacent sacrificial gates of a plurality of sacrificial gates. The method may further include forming a contact over the at least one shielding layer, forming a fill layer over the contact, and forming a plurality of trenches into the device structure, wherein at least one trench of the plurality of trenches is formed between a pair of adjacent shielding layers of the plurality of shielding layers, and wherein the at least one trench of the plurality of trenches is defined in part by a sidewall of the fill layer. The method may further include forming a gate structure within the at least one trench of the plurality of trenches.