Abstract: A first plurality of roofing shingles installed in a first plurality of rows on a roof deck, and a second plurality of roofing shingles installed in a second plurality of rows. An edge of one of the second roofing shingles in each of the second rows is offset from the edge of another one of the second roofing shingles in another adjacent one of the second rows. An edge of a first photovoltaic shingle is juxtaposed with the edge of a first roofing shingle of the second roofing shingles in a first row of the second rows. The edge of at least another photovoltaic shingle in at least one of another row of the second rows is substantially aligned with the edge of the first photovoltaic shingle. An additional roofing shingle is installed intermediate one of the second roofing shingles and one of the photovoltaic shingles.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: A system including a plurality of photovoltaic shingles installed on a roof deck, a plurality of roofing shingles, such as asphalt shingles, installed on the roof deck, and a plurality of step flaps. One end of the roofing shingle overlays a first side of a corresponding one of the step flaps, and one end of photovoltaic shingle overlays a second side of the corresponding one of the step flaps.

Abstract: A first plurality of roofing shingles installed in a first plurality of rows on a roof deck, and a second plurality of roofing shingles installed in a second plurality of rows. An edge of one of the second roofing shingles in each of the second rows is offset from the edge of another one of the second roofing shingles in another adjacent one of the second rows. An edge of a first photovoltaic shingle is juxtaposed with the edge of a first roofing shingle of the second roofing shingles in a first row of the second rows. The edge of at least another photovoltaic shingle in at least one of another row of the second rows is substantially aligned with the edge of the first photovoltaic shingle. An additional roofing shingle is installed intermediate one of the second roofing shingles and one of the photovoltaic shingles.

Abstract: A building integrated photovoltaic system includes a plurality of photovoltaic modules installed in an array on a roof deck. Each of the photovoltaic modules at least one solar cell, a first encapsulant encapsulating the at least one solar cell, a frontsheet juxtaposed with a first surface of the first encapsulant, and a backsheet juxtaposed with a second surface of the first encapsulant. The frontsheet includes a glass layer, a second encapsulant, and a first polymer layer. The backsheet includes a first layer and a second polymer layer attached to the first layer. Each of the photovoltaic modules includes a wire cover bracket, which is configured to overlap the wire cover bracket of an adjacent one of the photovoltaic modules.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.

Abstract: A system including a plurality of photovoltaic shingles installed on a roof deck, a plurality of roofing shingles, such as asphalt shingles, installed on the roof deck, and a plurality of step flaps. One end of the roofing shingle overlays a first side of a corresponding one of the step flaps, and one end of photovoltaic shingle overlays a second side of the corresponding one of the step flaps.

Abstract: A system includes a plurality of roofing shingles installed on a roof deck. Each of the roofing shingles includes first and second ends, first and second edges, a head lap, a reveal portion, a first side lap at the first end, and a second side lap at the second end. The second side lap includes a first surface, which has an adhesive. The first side lap of a first one of the roofing shingles overlays and is attached to the second side lap of a second one of the roofing shingles to form a sealed portion between the head lap of the first one of the roofing shingles and the head lap of the second one of the roofing shingles.

Abstract: Methods relating to the preparation and purification of bis (arene) metal complexes are provided. A method may comprise contacting a metal halide, with a first metal component and an aluminum halide, in a first solvent, so as to form a reaction mixture comprising an intermediate complex. A method may comprise contacting the intermediate complex, with a second metal component, in a reaction mixture comprising a second solvent, so as to form a reaction mixture comprising a bis (arene) metal complex. A method may comprise contacting the reaction mixture comprising the bis (arene) metal complex, with a separation media, so as to obtain a product. Bis (arene) metal complexes are also provided.

Abstract: A system includes a plurality of photovoltaic shingles installed on a roof deck, each of the shingles having a first layer including a head lap portion, and a second layer including at least one solar cell. A first photovoltaic shingle overlays at least a part of the head lap portion of a second photovoltaic shingle. The system includes at least one wireway installed proximate to a first end of at least the first photovoltaic shingle.

Abstract: A building integrated photovoltaic system includes a plurality of photovoltaic modules installed in an array on a roof deck. Each of the photovoltaic modules at least one solar cell, a first encapsulant encapsulating the at least one solar cell, a frontsheet juxtaposed with a first surface of the first encapsulant, and a backsheet juxtaposed with a second surface of the first encapsulant. The frontsheet includes a glass layer, a second encapsulant, and a first polymer layer. The backsheet includes a first layer and a second polymer layer attached to the first layer. Each of the photovoltaic modules includes a wire cover bracket, which is configured to overlap the wire cover bracket of an adjacent one of the photovoltaic modules.

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: A building integrated photovoltaic system includes a plurality of photovoltaic modules installed in an array on a roof deck. Each of the photovoltaic modules at least one solar cell, a first encapsulant encapsulating the at least one solar cell, a frontsheet juxtaposed with a first surface of the first encapsulant, and a backsheet juxtaposed with a second surface of the first encapsulant. The frontsheet includes a glass layer, a second encapsulant, and a first polymer layer. The backsheet includes a first layer and a second polymer layer attached to the first layer. Each of the photovoltaic modules includes a wire cover bracket, which is configured to overlap the wire cover bracket of an adjacent one of the photovoltaic modules.

Abstract: Some embodiments relate to precursors (including intermediate precursors) and related methods. To prepare an intermediate precursor, a mixture of bis (arene) metal complexes is combined with a first arene. The mixture of bis (arene) metal complexes and the first arene are heated and subsequently cooled. Upon cooling, a bis (first arene) metal complex precipitates from solution to obtain an intermediate precursor with high purity. To prepare a precursor, the bis (first arene) metal complex is contacted with a second arene and heated to obtain a precursor with high purity.

Abstract: A system includes a plurality of storage brackets installed on a roof deck, each including a base plate, an arm and optionally a head and a receptacle. The arm is optionally rotatable. The receptacle of one of a first pair of storage brackets is configured to receive the head of another of the first pair of storage brackets. The receptacle of one of a second pair of storage brackets is configured to receive the head of another of the second pair of storage brackets. The first and second pairs of storage brackets are spaced apart from one another. The brackets are configured to receive at least one roofing material, which is positioned on the base plate of at least one of the first pair of brackets and at least one of the second pair of brackets.

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.