Abstract: High purity precursor compositions and related methods are provided herein. The method includes obtaining a metal complex and a reagent. The method includes contacting the metal complex and the reagent to form a reaction product. The reaction product has a purity of at least 85% as determined by a thermogravimetric analysis (TGA) residue at 300° C. The reaction product can be used as a deposition precursor.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precursors to form films.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: Methods for forming high purity metal complex precursors in a single step and related products are provided herein. The method includes obtaining a first reactant and obtaining a second reactant. The method includes contacting the first reactant and second reactant to form a reaction product. The reaction product is a metal complex precursor. The reaction product has a purity of 90% or greater as measured by gas chromatography-mass spectroscopy.

Abstract: High purity bis (arene) metal complexes and related methods and related compositions are provided. Compositions are provided comprising a bis (arene) metal complex having a purity of at least 95%. Methods for purifying bis (arene) metal complexes are provided. Methods for producing bis (arene) metal complexes at high conversion are also provided.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.

Abstract: Methods relating to the preparation and purification of bis (arene) metal complexes are provided. A method may comprise contacting a metal halide, with a first metal component and an aluminum halide, in a first solvent, so as to form a reaction mixture comprising an intermediate complex. A method may comprise contacting the intermediate complex, with a second metal component, in a reaction mixture comprising a second solvent, so as to form a reaction mixture comprising a bis (arene) metal complex. A method may comprise contacting the reaction mixture comprising the bis (arene) metal complex, with a separation media, so as to obtain a product. Bis (arene) metal complexes are also provided.

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: Some embodiments relate to precursors (including intermediate precursors) and related methods. To prepare an intermediate precursor, a mixture of bis (arene) metal complexes is combined with a first arene. The mixture of bis (arene) metal complexes and the first arene are heated and subsequently cooled. Upon cooling, a bis (first arene) metal complex precipitates from solution to obtain an intermediate precursor with high purity. To prepare a precursor, the bis (first arene) metal complex is contacted with a second arene and heated to obtain a precursor with high purity.

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: The invention provides certain organotin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates, as well as in the deposition of EUV-patternable films. Also provided are certain novel precursor compositions. Also disclosed are processes for using the novel precusors to form films.

Abstract: The invention provides certain fluorinated alkyl tin compounds which are believed to be useful in the vapor deposition of tin-containing films onto the surface of microelectronic device substrates. Also provided are processes for the preparation of the precursor compounds and processes for the use of such compounds in the deposition of tin-containing films onto microelectronic device substrates.