Abstract: A system includes a plurality of roofing shingles installed on a roof deck. Each of the roofing shingles includes first and second ends, first and second edges, a head lap, a reveal portion, a first side lap at the first end, and a second side lap at the second end. The second side lap includes a first surface, which has an adhesive. The first side lap of a first one of the roofing shingles overlays and is attached to the second side lap of a second one of the roofing shingles to form a sealed portion between the head lap of the first one of the roofing shingles and the head lap of the second one of the roofing shingles.

Abstract: A first plurality of roofing shingles installed in on a roof deck, and a second plurality of roofing shingles installed in a second plurality of rows. An edge of one of the second roofing shingles in each of the second rows is offset from the edge of another one of the second roofing shingles in another adjacent one of the second rows. An edge of a first photovoltaic shingle is juxtaposed with the edge of a first roofing shingle of the second roofing shingles in a first row of the second rows. The edge of at least another photovoltaic shingle in at least one of another row of the second rows is substantially aligned with the edge of the first photovoltaic shingle. An additional roofing shingle is installed intermediate one of the second roofing shingles and one of the photovoltaic shingles.

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

Abstract: Provided is a facile process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides organotin precursor compounds, for example tris(dimethylamido)isopropyl tin, in a highly pure form. As such, the products of the process are particularly useful in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in microelectronic device manufacturing.

Abstract: A system includes a plurality of photovoltaic shingles installed on a roof deck, each of the shingles having a first layer including a head lap portion, and a second layer including at least one solar cell. A first photovoltaic shingle overlays at least a part of the head lap portion of a second photovoltaic shingle. The system includes at least one wireway installed proximate to a first end of at least the first photovoltaic shingle.

Abstract: The invention provides a PEALD process to deposit etch resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 co-reactant. In one embodiment, this PEALD process relies on a single precursor—a bis(dialkylamino)tetraalkyldisiloxane, together with hydrogen plasma to deposit the etch-resistant thin-films of SiOCN. Since the film can be deposited with a single precursor, the overall process exhibits improved throughput.

Abstract: A system includes a plurality of roofing shingles installed on a roof deck. Each of the roofing shingles includes first and second ends, first and second edges, a head lap, a reveal portion, a first side lap at the first end, and a second side lap at the second end. The second side lap includes a first surface, which has an adhesive. The first side lap of a first one of the roofing shingles overlays and is attached to the second side lap of a second one of the roofing shingles to form a sealed portion between the head lap of the first one of the roofing shingles and the head lap of the second one of the roofing shingles.

Abstract: A first plurality of roofing shingles installed in a first plurality of rows on a roof deck, and a second plurality of roofing shingles installed in a second plurality of rows. An edge of one of the second roofing shingles in each of the second rows is offset from the edge of another one of the second roofing shingles in another adjacent one of the second rows. An edge of a first photovoltaic shingle is juxtaposed with the edge of a first roofing shingle of the second roofing shingles in a first row of the second rows. The edge of at least another photovoltaic shingle in at least one of another row of the second rows is substantially aligned with the edge of the first photovoltaic shingle. An additional roofing shingle is installed intermediate one of the second roofing shingles and one of the photovoltaic shingles.

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: A system including a plurality of photovoltaic shingles installed on a roof deck, a plurality of roofing shingles, such as asphalt shingles, installed on the roof deck, and a plurality of step flaps. One end of the roofing shingle overlays a first side of a corresponding one of the step flaps, and one end of photovoltaic shingle overlays a second side of the corresponding one of the step flaps.

Abstract: A system includes a plurality of photovoltaic shingles installed on a roof deck, each of the shingles having a first layer including a head lap portion, and a second layer including at least one solar cell. A first photovoltaic shingle overlays at least a part of the head lap portion of a second photovoltaic shingle. The system includes at least one wireway installed proximate to a first end of at least the first photovoltaic shingle.

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: Methods of synthesizing aminoiodosilanes are disclosed. The reaction to produce the disclosed aminoiodosilanes is represented by the formula: SiI4+z(NH2R1)?SiIy(NHR1)z, wherein R1 is selected from a C1-C10 alkyl or cycloalkyl, aryl, or a hetero group; y=1 to 3; and z=4?y.

Abstract: A system includes a plurality of photovoltaic shingles installed on a roof deck, each of the shingles having a first layer including a head lap portion, and a second layer including at least one solar cell. A first photovoltaic shingle overlays at least a part of the head lap portion of a second photovoltaic shingle. The system includes at least one wireway installed proximate to a first end of at least the first photovoltaic shingle.

Abstract: Provided is an efficient and effective process for preparing certain organotin compounds having alkyl and alkylamino substituents. The process provides the organotin compounds in a highly pure crystalline form which are particularly useful as precursors in the deposition of high-purity tin oxide films in, for example, extreme ultraviolet light (EUV) lithography techniques used in the manufacture of certain microelectronic devices.

Abstract: Provided is a process for preparing certain silane precursor compounds, e.g., triiodosilane from trichlorosilane utilizing lithium iodide in powder form and catalyzed by tertiary amines. The process provides triiodosilane in high yields and high purity. Triiodosilane is a precursor compound useful in the atomic layer deposition of silicon onto various microelectronic device structures.

Abstract: Provided is a plasma enhanced atomic layer deposition (PEALD) process for depositing etch-resistant SiOCN films. These films provide improved growth rate, improved step coverage and excellent etch resistance to wet etchants and post-deposition plasma treatments containing O2 and NH3 co-reactants. This PEALD process relies on one or more precursors reacting in tandem with the plasma exposure to deposit the etch-resistant thin-films of SiOCN. The films display excellent resistance to wet etching with dilute aqueous HF solutions, both after deposition and after post-deposition plasma treatment(s). Accordingly, these films are expected to display excellent stability towards post-deposition fabrication steps utilized during device manufacturing and build.

Abstract: Provided are complexes useful in the conversion of chloro- and bromo-silanes to highly desired iodosilanes such as H2SiI2 and HSiI3, via a halide exchange reaction. The species which mediates this reaction is an iodide reactant comprising aluminum.

Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.

Abstract: Provided are certain amino triiodosilanes useful as silicon precursor compounds for the vapor deposition of silicon species onto the surfaces of microelectronic devices. In this regard, such precursors can be utilized, along with optional co-reactants, to deposit silicon-containing films such as silicon nitride, silicon oxide, silicon oxynitride, SiOCN, SiCN, and silicon carbide. The silicon precursors of the invention are free of Si—H bonds. Also provided is a process for preparing such silicon precursor compounds by the displacement of a halogen from tetrahalosilane compounds with secondary amines.