Abstract: A dielectric material is disclosed comprising a plurality of substantially longitudinally oriented wires which are coupled together, wherein each of the wires includes a conductive core comprising a first material and one or more insulating shell layers comprising a compositionally different second material disposed about the core. In one embodiment, a dielectric layer is disclosed comprising a substrate comprising an insulating material having a plurality of nanoscale pores defined therein having a pore diameter less than about 100 nm, and a conductive material disposed within the nanoscale pores.

Abstract: A dielectric material is disclosed comprising a plurality of substantially longitudinally oriented wires which are coupled together, wherein each of the wires includes a conductive core comprising a first material and one or more insulating shell layers comprising a compositionally different second material disposed about the core. In one embodiment, a dielectric layer is disclosed comprising a substrate comprising an insulating material having a plurality of nanoscale pores defined therein having a pore diameter less than about 100 nm, and a conductive material disposed within the nanoscale pores.

Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

Abstract: Methods, systems, and apparatuses for nanowire deposition are provided. A deposition system includes an enclosed flow channel, an inlet port, and an electrical signal source. The inlet port provides a suspension that includes nanowires into the channel. The electrical signal source is coupled to an electrode pair in the channel to generate an electric field to associate at least one nanowire from the suspension with the electrode pair. The deposition system may include various further features, including being configured to receive multiple solution types, having various electrode geometries, having a rotatable flow channel, having additional electrical conductors, and further aspects.

Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

Abstract: The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.

Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Abstract: The present invention relates to nanostructured materials (including nanowires) for use in batteries. Exemplary materials include carbon-comprising, Si-based nanostructures, nanostructured materials disposed on carbon-based substrates, and nanostructures comprising nanoscale scaffolds. The present invention also provides methods of preparing battery electrodes, and batteries, using the nanostructured materials.

Abstract: Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Abstract: Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.

Abstract: The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into a electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

Abstract: Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.

Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Abstract: Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

Abstract: Methods of doping nanostructures, such as nanowires, are disclosed. The methods provide a variety of approaches for improving existing methods of doping nanostructures. The embodiments include the use of a sacrificial layer to promote uniform dopant distribution within a nanostructure during post-nanostructure synthesis doping. In another embodiment, a high temperature environment is used to anneal nanostructure damage when high energy ion implantation is used. In another embodiment rapid thermal annealing is used to drive dopants from a dopant layer on a nanostructure into the nanostructure. In another embodiment a method for doping nanowires on a plastic substrate is provided that includes depositing a dielectric stack on a plastic substrate to protect the plastic substrate from damage during the doping process.

Abstract: Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.

Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Abstract: A phased array system having antennas, non-variable phase shifters, and switches. The non-variable phase shifters are configured to be coupled selectively to a transmitter or a receiver. A non-variable phase shifter is configured to shift a phase of an electromagnetic energy wave that traverses the non-variable phase shifter by a fraction of a period of the electromagnetic energy wave for a range of frequencies of the electromagnetic energy wave. At least one of the fraction and the range associated with the non-variable phase shifter is different from at least one of the fraction and the range associated with other non-variable phase shifters. The switches are configured to couple selectively the antennas to the non-variable phase shifters, the transmitter, or the receiver.