Abstract: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device.

Abstract: The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.

Abstract: Embodiments of the present invention are provided for improved contact doping and annealing systems and processes. In embodiments, a plasma ion immersion implantation (PIII) process is used for contact doping of nanowires and other nanoelement based thin film devices. According to further embodiments of the present invention, pulsed laser annealing using laser energy at relatively low laser fluences below about 100 mJ/cm2 (e.g., less than about 50 mJ/cm2, e.g., between about 2 and 18 mJ/cm2) is used to anneal nanowire and other nanoelement-based devices on substrates, such as low temperature flexible substrates, e.g., plastic substrates.

Abstract: The present invention relates to a system and process for producing a nanowire-material composite. A substrate having nanowires attached to a portion of at least one surface is provided. A material is deposited over the portion to form the nanowire-material composite. The process further optionally includes separating the nanowire-material composite from the substrate to form a freestanding nanowire-material composite. The freestanding nanowire material composite is optionally further processed into an electronic substrate. A variety of electronic substrates can be produced using the methods described herein. For example, a multi-color light-emitting diode can be produced from multiple, stacked layers of nanowire-material composites, each composite layer emitting light at a different wavelength.

Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Abstract: The present invention provides methods and systems for nanowire alignment and deposition. Energizing (e.g., an alternating current electric field) is used to align and associate nanowires with electrodes. By modulating the energizing, the nanowires are coupled to the electrodes such that they remain in place during subsequent wash and drying steps. The invention also provides methods for transferring nanowires from one substrate to another in order to prepare various device substrates. The present invention also provides methods for monitoring and controlling the number of nanowires deposited at a particular electrode pair, as well as methods for manipulating nanowires in solution.

Abstract: Methods, systems, and apparatuses for annealing semiconductor nanowires and for fabricating electrical devices are provided. Nanowires are deposited on a substrate. A plurality of electrodes is formed. The nanowires are in electrical contact with the plurality of electrodes. The nanowires are doped. A polarized laser beam is applied to the nanowires to anneal at least a portion of the nanowires. The nanowires may be aligned substantially parallel to an axis. The laser beam may be polarized in various ways to modify absorption of radiation of the applied laser beam by the nanowires. For example, the laser beam may be polarized in a direction substantially parallel to the axis or substantially perpendicular to the axis to enable different nanowire absorption profiles.

Abstract: The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed.

Abstract: Methods and apparatuses for nanoenabled memory devices and anisotropic charge carrying arrays are described. In an aspect, a memory device includes a substrate, a source region of the substrate, and a drain region of the substrate. A population of nanoelements is deposited on the substrate above a channel region, the population of nanolements in one embodiment including metal quantum dots. A tunnel dielectric layer is formed on the substrate overlying the channel region, and a metal migration barrier layer is deposited over the dielectric layer. A gate contact is formed over the thin film of nanoelements. The nanoelements allow for reduced lateral charge transfer. The memory device may be a single or multistate memory device.

Abstract: Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance.

Abstract: The present invention is directed to thin film transistors using nanowires (or other nanostructures such as nanoribbons, nanotubes and the like) incorporated in and/or disposed proximal to conductive polymer layer(s), and production scalable methods to produce such transistors. In particular, a composite material comprising a conductive polymeric material such as polyaniline (PANI) or polypyrrole (PPY) and one or more nanowires incorporated therein is disclosed.

Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.

Abstract: Methods and systems for depositing nanomaterials onto a receiving substrate and optionally for depositing those materials in a desired orientation, that comprise providing nanomaterials on a transfer substrate and contacting the nanomaterials with an adherent material disposed upon a surface or portions of a surface of a receiving substrate. Orientation is optionally provided by moving the transfer and receiving substrates relative to each other during the transfer process.

Abstract: A reflective light imaging system for use in high-throughput screening of samples disposed in multiple-well plates. The system can include a set of mirrors and lenses. The first mirror has a central aperture through which light from the object passes. The first mirror has a concave reflective surface that faces the image plane. The next element is a second mirror with a convex reflective surface. The system can include an aberration corrective system positioned between the second mirror and the image plane, and an optical sensor near the image plane. Light from an object passes through the central aperture of the first mirror and is reflected off the convex surface of the second mirror. The light then strikes the reflective surface of the first mirror. The light from the first mirror is then collected by the aberration correction system and transmitted toward the image plane.

Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Abstract: Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

Abstract: A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational current level. A plurality of semiconductor regions are defined in the thin film of nanowires. Contacts are formed at the semiconductor device regions to thereby provide electrical connectivity to the plurality of semiconductor devices. Furthermore, various materials for fabricating nanowires, thin films including p-doped nanowires and n-doped nanowires, nanowire heterostructures, light emitting nanowire heterostructures, flow masks for positioning nanowires on substrates, nanowire spraying techniques for depositing nanowires, techniques for reducing or eliminating phonon scattering of electrons in nanowires, and techniques for reducing surface states in nanowires are described.

Abstract: Macroelectronic substrate materials incorporating nanowires are described. These are used to provide underlying electronic elements (e.g., transistors and the like) for a variety of different applications. Methods for making the macroelectronic substrate materials are disclosed. One application is for transmission an reception of RF signals in small, lightweight sensors. Such sensors can be configured in a distributed sensor network to provide security monitoring. Furthermore, a method and apparatus for a radio frequency identification (RFID) tag is described. The RFID tag includes an antenna and a beam-steering array. The beam-steering array includes a plurality of tunable elements. A method and apparatus for an acoustic cancellation device and for an adjustable phase shifter that are enabled by nanowires are also described.

Abstract: Broad-range light-detection systems, including components and methods of use thereof. These systems may include apparatus and methods for detecting light with increased speed and/or detection efficiency, particularly in applications involving repeated analysis of the same sample and/or successive analysis of different samples, and particularly when the sample or samples have a wide range of light intensities. These systems also may include apparatus and methods for detecting light with increased accuracy over a broad range of intensities. These systems also may include vapparatus and methods for automatically scaling detection range to improve detection based on the intensity of the detected light.