Abstract: A gas laser includes a laser cavity, mirror means defining an optical path in the cavity, electrodes defining an electric discharge path in the cavity, the electrodes including at least one anode member having a passage therethrough which at one end opens into the cavity, and gas supply means for injecting gas into the cavity through the passage, wherein the wall of the passage at said one end and the exterior of the anode member around the end of said passage is electrically insulated and an electrically conducting anode surface defining the root of the discharge is provided inwardly of the perimeter of the open end of the passage.

Abstract: A multi-layer metallization method and structure that permits the use of sodium-ion contaminated titanium-tungsten (Ti:W) as a barrier metal with gold conductor metal on a silicon substrate, without significant degradation of device characteristics. After depositing the barrier and conductor metal layers, a layer of phosphorous-silicate glass (PSG) is anisotropically-etched to expose the field oxide and top surface of the conductor metal but leave PSG layer on each sidewall of the metallization structure. The circuit is then annealed at 400.degree. C. for 30 minutes. Then, an adhesion layer (Si.sub.3 N.sub.4) and an insulative layer (SiO.sub.2) are deposited over the metallization structure and field oxide, with the adhesion layer in contact with the top surface of the conductor metal and the gettering composition.