Abstract: An imaging optical system has a plurality of mirrors which image an object field in an object plane in an image field in an image plane. The imaging optical system has a pupil obscuration. The last mirror in the beam path of the imaging light between the object field and the image field has a through-opening for the passage of the imaging light. A penultimate mirror of the imaging optical system in the beam path of the imaging light between the object field and the image field has no through-opening for the passage of the imaging light. The result is an imaging optical system that provides a combination of small imaging errors, manageable production and a good throughput for the imaging light.

Abstract: An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. The imaging optics includes a first partial objective to image the object field onto an intermediate image, and the imaging optics includes a second partial objective to image the intermediate image onto the image field. The second partial objective includes a penultimate mirror in the beam path of imaging light between the object field and the image field, and the second partial objective includes a last mirror in the beam path. The penultimate mirror images the intermediate image onto a further intermediate image, and the last mirror images the further intermediate image onto the image field.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: An imaging optics has a plurality of mirrors to image an object field in an object plane into an image field in an image plane. The imaging optics includes a first partial objective to image the object field onto an intermediate image, and the imaging optics includes a second partial objective to image the intermediate image onto the image field. The second partial objective includes a penultimate mirror in the beam path of imaging light between the object field and the image field, and the second partial objective includes a last mirror in the beam path. The penultimate mirror images the intermediate image onto a further intermediate image, and the last mirror images the further intermediate image onto the image field.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: A catadioptric projection objective for imaging a pattern provided in an object plane of the projection objective onto an image plane of the projection objective has a first, refractive objective part for imaging the pattern provided in the object plane into a first intermediate image; a second objective part including at least one concave mirror for imaging the first Intermediate imaging into a second intermediate image; and a third, refractive objective part for imaging the second intermediate imaging onto the image plane; wherein the projection objective has a maximum lens diameter Dmax, a maximum image field height Y?, and an image side numerical aperture NA; wherein COMP1=Dmax/(Y?·NA2) and wherein the condition COMP1<10 holds.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: A system and method for inspection is disclosed. The design includes an objective employed for use with light energy having a wavelength in various ranges, including approximately 266 to 1000 nm, 157 nm through infrared, and other ranges. The objective includes a focusing lens group having at least one focusing lens configured to receive light, a field lens oriented to receive focused light energy from said focusing lens group and provide intermediate light energy, and a Mangin mirror arrangement positioned to receive the intermediate light energy from the field lens and form controlled light energy. Each focusing lens has a reduced diameter, such as a diameter of less than approximately 100 mm, and a maximum corrected field size of approximately 0.15 mm. An immersion substance, such as oil, water, or silicone gel, may be employed prior to passing controlled light energy to the specimen inspected.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: An imaging optical system has a plurality of mirrors which image an object field in an object plane in an image field in an image plane. The imaging optical system has a pupil obscuration. The last mirror in the beam path of the imaging light between the object field and the image field has a through-opening for the passage of the imaging light. A penultimate mirror of the imaging optical system in the beam path of the imaging light between the object field and the image field has no through-opening for the passage of the imaging light. The result is an imaging optical system that provides a combination of small imaging errors, manageable production and a good throughput for the imaging light.

Abstract: Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.

Abstract: A relatively high NA objective employed for use in imaging a specimen is provided. The objective includes a lens group having at least one focusing lens configured to receive light energy and form an intermediate image, at least one field lens oriented to receive the intermediate image and provide intermediate light energy, and a Mangin mirror arrangement positioned to receive the intermediate light energy and apply light energy to the specimen. One or more elements may employ an aspheric surface. The objective may provide an uncorrected spectral bandwidth up to approximately 193 to 266 nanometers and numerical apertures in excess of 0.9. Elements are less than 100 millimeters in diameter and may fit within a standard microscope. The field lens may include more than one lens and may be formed of a material different from at least one other lens in the objective.

Abstract: A photolithographic reduction projection catadioptric objective includes a first optical group having an even number of at least four mirrors and having a positive overall magnifying power, and a second substantially refractive optical group more image forward than the first optical group having a number of lenses. The second optical group has a negative overall magnifying power for providing image reduction. The first optical group provides compensative aberrative correction for the second optical group. The objective forms an image with a numerical aperture of at least substantially 0.65, and preferably greater than 0.70 or still more preferably greater than 0.75.

Abstract: An ultra-broadband ultraviolet (UV) catadioptric imaging microscope system with wide-range zoom capability. The microscope system, which includes a catadioptric lens group and a zooming tube lens group, has high optical resolution in the deep UV wavelengths, continuously adjustable magnification, and a high numerical aperture. The system integrates microscope modules such as objectives, tube lenses and zoom optics to reduce the number of components, and to simplify the system manufacturing process. The preferred embodiment offers excellent image quality across a very broad deep ultraviolet spectral range, combined with an all-refractive zooming tube lens. The zooming tube lens is modified to compensate for higher-order chromatic aberrations that would normally limit performance.

Abstract: The invention features a system for microlithography that includes a mercury light source configured to emit radiation at multiple mercury emission lines, a projection objective positioned to receive radiation emitted by the mercury light source, and a stage configured to position a wafer relative to the projection objective. During operation, the projection objective directs radiation from the light source to the wafer, where the radiation at the wafer includes energy from more than one of the emission lines. Optical lens systems for use in said projection objective comprise four lens groups, each having two lenses comprising silica, the first and second lens groups on one hand and the third and fourth lens groups on the other hand are positioned symmetrically with respect to a plane perpendicular to the optical axis of said lens system.

Abstract: An objective comprising axial symmetry, at least one curved mirror and at least one lens and two intermediate images. The objective includes two refractive partial objectives and one catadioptric partial objective. The objective includes a first partial objective, a first intermediate a image, a second partial objective, a second intermediate image, and a third partial objective. At least one of the partial objectives is purely refractive. One of the partial objectives is purely refractive and one is purely catoptric.