Patents by Inventor David Todd Emerson

David Todd Emerson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9754926
    Abstract: An electronic device may include a packaging substrate having a packaging substrate face with a plurality of electrically conductive pads on the packaging substrate face. A first light emitting diode die may bridge first and second ones of the electrically conductive pads. More particularly, the first light emitting diode die may include first anode and cathode contacts respectively coupled to the first and second electrically conductive pads using metallic bonds. Moreover, widths of the metallic bonds between the first anode contact and the first pad and between the first cathode contact and the second pad may be at least 60 percent of a width of the first light emitting diode die. A second light emitting diode die may bridge third and fourth ones of the electrically conductive pads. The second light emitting diode die may include second anode and cathode contacts respectively coupled to the third and fourth electrically conductive pads using metallic bonds.
    Type: Grant
    Filed: February 14, 2011
    Date of Patent: September 5, 2017
    Assignee: CREE, INC.
    Inventors: Matthew Donofrio, John Adam Edmond, Hua-Shuang Kong, Peter S. Andrews, David Todd Emerson
  • Publication number: 20170229431
    Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.
    Type: Application
    Filed: April 27, 2017
    Publication date: August 10, 2017
    Inventors: Michael John Bergmann, David Todd Emerson, Joseph G. Clark, Christopher P. Hussell
  • Patent number: 9722158
    Abstract: A multiple element emitter package is disclosed for increasing color fidelity and heat dissipation, improving current control, and increasing rigidity of the package assembly. In one embodiment, the package comprises a casing with a cavity extending into the interior of the casing from a first main surface. A lead frame is at least partially encased by the casing, the lead frame comprising a plurality of electrically conductive parts carrying a linear array of LEDs. Electrically conductive parts, separate from the parts carrying the LEDs, have a connection pad, wherein the LEDs are electrically coupled to the connection pad, such as by a wire bond. This arrangement allows for a respective electrical signal to be applied to each of the LEDs. The emitter package may be substantially waterproof, and an array of the emitter packages may be used in an LED display such as an indoor and/or outdoor LED screen.
    Type: Grant
    Filed: October 15, 2012
    Date of Patent: August 1, 2017
    Assignee: CREE HUIZHOU SOLID STATE LIGHTING COMPANY LIMITED
    Inventors: Alex Chi Keung Chan, Yue Kwong Victor Lau, Xuan Wang, David Todd Emerson
  • Patent number: 9685592
    Abstract: One embodiment of the surface mount LED package includes a lead frame and a plastic casing at least partially encasing the lead frame. The lead frame includes a plurality of electrically conductive chip carriers. There is an LED disposed on each one of the plurality of electrically conductive chip carriers. A profile height of the surface mount LED package is less than about 1.0 mm.
    Type: Grant
    Filed: June 6, 2011
    Date of Patent: June 20, 2017
    Assignee: Cree Huizhou Solid State Lighting Company Limited
    Inventors: Chi Keung Chan, Chak Hau Pang, Fei Hong Li, Yue Kwong Lau, Jun Zhang, David Todd Emerson
  • Patent number: 9660153
    Abstract: A horizontal LED die is flip-chip mounted on a mounting substrate to define a gap that extends between the closely spaced apart anode and cathode contacts of the LED die, and between the closely spaced apart anode and cathode pads of the substrate. An encapsulant is provided on the light emitting diode die and the mounting substrate. The gap is configured to prevent sufficient encapsulant from entering the gap that would degrade operation of the LED.
    Type: Grant
    Filed: May 20, 2011
    Date of Patent: May 23, 2017
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, Raymond Rosado, Matthew Donofrio, John Adam Edmond
  • Patent number: 9653643
    Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: May 16, 2017
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, David Todd Emerson, Joseph G. Clark, Christopher P. Hussell
  • Patent number: 9637822
    Abstract: A susceptor apparatus for use in a CVD reactor includes a main platter with a central gear. The main platter has opposite first and second sides, a central recess formed in the second side, and a plurality of circumferentially spaced-apart pockets formed in the first side. The central gear is positioned within the central recess and the satellite platters are individually rotatable within the respective pockets. Each pocket has a peripheral wall with an opening in communication with the central recess. The central gear teeth extend into each of the pockets via the respective wall openings and engage a planet gear associated with each satellite platter. Rotation of the main platter about its rotational axis causes the satellite platters to rotate about their individual rotational axes.
    Type: Grant
    Filed: October 8, 2010
    Date of Patent: May 2, 2017
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, David Todd Emerson, David Dean Seibel
  • Patent number: 9640737
    Abstract: Horizontal light emitting diodes include anode and cathode contacts on the same face and a transparent substrate having an oblique sidewall. A conformal phosphor layer having an average equivalent particle diameter d50 of at least about 10 ?m is provided on the oblique sidewall. High aspect ratio substrates may be provided. The LED may be directly attached to a submount.
    Type: Grant
    Filed: January 31, 2011
    Date of Patent: May 2, 2017
    Assignee: Cree, Inc.
    Inventors: Matthew Donofrio, John Adam Edmond, James Ibbetson, David Todd Emerson, Michael John Bergmann, Kevin Haberern, Raymond Rosado, Jeffrey Carl Britt
  • Patent number: 9634209
    Abstract: A surface mount LED package includes a lead frame carrying a plurality of LEDs and a plastic casing at least partially encasing the lead frame. The lead frame includes an electrically conductive chip carrier and first, second, and third electrically conductive connection parts separate from the electrically conductive chip carrier. Each of the first, second and third electrically conductive connection parts has an upper surface, a lower surface, and a connection pad on the upper surface. The plurality of LEDs are disposed on an upper surface of the electrically conductive chip carrier. Each LED has a first electrical terminal electrically coupled to the electrically conductive chip carrier. Each LED has a second electrical terminal electrically coupled to the connection pad of a corresponding one of the first, second, and third electrically conductive connection parts.
    Type: Grant
    Filed: August 28, 2013
    Date of Patent: April 25, 2017
    Assignee: Cree, Inc.
    Inventors: Chi Keung Chan, Chak Hau Pang, Fei Hong Li, David Todd Emerson
  • Patent number: 9318327
    Abstract: Semiconductor device structures are provided that are suitable for use in the fabrication of electronic devices such as light emitting diodes. The semiconductor device structures include a substrate having a roughened growth surface suitable for supporting the growth of an epitaxial region thereon. The device structure can include an epitaxial region having reduced defects and/or improved radiation extraction efficiency on the roughened growth surface of the substrate. The roughened growth surface of the substrate can have an average roughness Ra of at least about 1 nanometer (nm) and an average peak to valley height Rz of at least about 10 nanometers (nm).
    Type: Grant
    Filed: November 28, 2006
    Date of Patent: April 19, 2016
    Assignee: CREE, INC.
    Inventors: Michael John Bergmann, Jason Hansen, David Todd Emerson, Kevin Ward Haberern
  • Patent number: 9112083
    Abstract: A semiconductor device is provided that includes a Group III nitride based superlattice and a Group III nitride based active region comprising at least one quantum well structure on the superlattice. The quantum well structure includes a well support layer comprising a Group III nitride, a quantum well layer comprising a Group III nitride on the well support layer and a cap layer comprising a Group III nitride on the quantum well layer. A Group III nitride based semiconductor device is also provided that includes a gallium nitride based superlattice having at least two periods of alternating layers of InXGa1-XN and InYGa1-YN, where 0?X<1 and 0?Y<1 and X is not equal to Y. The semiconductor device may be a light emitting diode with a Group III nitride based active region. The active region may be a multiple quantum well active region.
    Type: Grant
    Filed: June 27, 2012
    Date of Patent: August 18, 2015
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, James Ibbetson, Michael John Bergmann, Kathleen Marie Doverspike, Michael John O'Loughlin, Howard Dean Nordby, Jr., Amber Christine Abare
  • Patent number: 9054253
    Abstract: Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.
    Type: Grant
    Filed: August 30, 2013
    Date of Patent: June 9, 2015
    Assignee: Cree, Inc.
    Inventors: Michael John Bergmann, David Todd Emerson
  • Patent number: 8957440
    Abstract: A light emitting diode die that when encapsulated within an overmolded hemispherical lens has a packaging factor less than 1.2. The light emitting diode die may include a stacked structure including a metal overlay, a composite high reflectivity mirror on the metal overlay, a transparent conductive oxide layer on the composite high reflectivity mirror, and a diode structure on the transparent conductive oxide layer. The diode structure may include a roughened surface opposite the transparent conductive oxide layer, a submount connected to the composite high reflectivity mirror and a bond metal between the submount and the metal overlay. A conductive via may extend through the composite high reflectivity mirror and electrically connect the transparent conductive oxide and the bond metal.
    Type: Grant
    Filed: October 4, 2011
    Date of Patent: February 17, 2015
    Assignee: Cree, Inc.
    Inventors: James Ibbetson, David Todd Emerson
  • Patent number: 8957435
    Abstract: A light emission package includes multiple colored solid state emitters each having a different non-white dominant wavelength in the visible range, and at least one lumiphor arranged to receive emissions from at least one other solid state emitter, with each emitter arranged on or adjacent to a common submount. The at least one other emitter and lumiphor may be arranged in combination to emit white light. Each emitter is independently controllable, permitting color and/or color temperature of a lighting device to be varied during operation of the device. At least one white emitter may be combined with red, green, and blue LEDs.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: February 17, 2015
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, Wooh Jae Kim, Mark Terrence McClear
  • Patent number: 8906263
    Abstract: Provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.70 to 0.99 and y is in a range of 0.001 and 0.025. Also provided are methods of making phosphors and light emitting devices that include a phosphor composition according to an embodiment of the invention.
    Type: Grant
    Filed: June 3, 2011
    Date of Patent: December 9, 2014
    Assignee: Cree, Inc.
    Inventors: Harry A. Seibel, II, Brian Thomas Collins, David Todd Emerson
  • Patent number: 8888917
    Abstract: A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor.
    Type: Grant
    Filed: January 4, 2010
    Date of Patent: November 18, 2014
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, Robert Allen Garner, Michael John Bergmann, Keenan Carlyle Brown, Michael Allen Pennington, Thomas Goldthwaite Coleman
  • Patent number: 8877524
    Abstract: A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: November 4, 2014
    Assignee: Cree, Inc.
    Inventors: Ashay Chitnis, John Edmond, Jeffrey Carl Britt, Bernd P. Keller, David Todd Emerson, Michael John Bergmann, Jasper S. Cabalu
  • Patent number: 8853712
    Abstract: A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases up to 270 lumens per watt.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: October 7, 2014
    Assignee: Cree, Inc.
    Inventors: Christopher P. Hussell, Florin Tudorica, David Todd Emerson, Michael John Bergmann, Arthur Fong-Yuen Pun
  • Patent number: 8772757
    Abstract: Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 ?A/?m2 are also provided.
    Type: Grant
    Filed: February 13, 2008
    Date of Patent: July 8, 2014
    Assignee: Cree, Inc.
    Inventors: David Todd Emerson, Michael John Bergmann, Amber Abare, Kevin Haberern
  • Patent number: RE46589
    Abstract: The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The structure includes a first n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1; a second n-type cladding layer of AlxInyGa1?x?yN, where 0?x?1 and 0?y<1 and (x+y)?1, wherein the second n-type cladding layer is further characterized by the substantial absence of magnesium; an active portion between the first and second cladding layers in the form of a multiple quantum well having a plurality of InxGa1?xN well layers where 0<x<1 separated by a corresponding plurality of AlxInyGa1?x?yN barrier layers where 0?x?1 and 0?y?1; a p-type layer of a Group III nitride, wherein the second n-type cladding layer is positioned between the p-type layer and the multiple quantum well; and wherein the first and second n-type cladding layers have respective bandgaps that are each larger than the bandgap of the well layers.
    Type: Grant
    Filed: July 13, 2015
    Date of Patent: October 24, 2017
    Assignee: Cree, Inc.
    Inventors: John Adam Edmond, Kathleen Marie Doverspike, Hua-shuang Kong, Michael John Bergmann, David Todd Emerson