Abstract: Provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.50 to 0.99 and y is less than 0.013. Also provided according to embodiments of the invention are phosphor compositions that include Ca1-x-ySrxEuyAlSiN3, wherein x is in a range of 0.70 to 0.99 and y is in a range of 0.001 and 0.025. Also provided are methods of making phosphors and light emitting devices that include a phosphor composition according to an embodiment of the invention.

Abstract: A vapor deposition reactor and associated method are disclosed that increase the lifetime and productivity of a filament-based resistive-heated vapor deposition system. The reactor and method provide for heating the filament while permitting the filament to move as it expands under the effect of increasing temperature while limiting the expanding movement of the filament to an amount that prevents the expanding movement of the filament from creating undesired contact with any portions of the reactor.

Abstract: A method for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs, typically on a wafer, and coating the LEDs with a conversion material so that at least some light from the LEDs passes through the conversion material and is converted. The light emission from the LED chips comprises light from the conversion material, typically in combination with LED light. The emission characteristics of at least some of the LED chips is measured and at least some of the conversion material over the LEDs is removed to alter the emission characteristics of the LED chips. The invention is particularly applicable to fabricating LED chips on a wafer where the LED chips have light emission characteristics that are within a range of target emission characteristics. This target range can fall within an emission region on a CIE curve to reduce the need for binning of the LEDs from the wafer.

Abstract: A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 250 lumens per watt, and in some cases up to 270 lumens per watt.

Abstract: Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 360 nm with wall plug efficiencies of at least than 4% are provided. Wall plug efficiencies may be at least 5% or at least 6%. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 345 nm with wall plug efficiencies of at least than 2% are also provided. Light emitting devices and methods of fabricating light emitting devices that emit at wavelengths less than 330 nm with wall plug efficiencies of at least than 0.4% are provided. Light emitting devices and methods of fabricating light emitting devices having a peak output wavelength of not greater than 360 nm and an output power of at least 5 mW, having a peak output wavelength of 345 nm or less and an output power of at least 3 mW and/or a peak output wavelength of 330 nm or less and an output power of at least 0.3 mW at a current density of less than about 0.35 ?A/?m2 are also provided.

Abstract: A semiconductor light emitting apparatus a semiconductor light emitting device configured to emit light inside a hollow shell including wavelength conversion material dispersed therein or thereon. A semiconductor light emitting apparatus according to some embodiments is capable of generating in excess of 230 lumens per watt.

Abstract: The present invention is directed to LED packages and LED displays utilizing the LED packages, wherein the LED chips within the packages are arranged in unique orientations to provide the desired package or display FFP. One LED package according to the present invention comprises a reflective cup and an LED chip mounted in the reflective cup. The reflective cup has a first axis and a second axis orthogonal to the first axis, wherein the LED chip is rotated within the reflective cup so that the LED chip is out of alignment with said first axis. Some of the LED packages can comprise a rectangular LED chip having a chip longitudinal axis and an oval shaped reflective cup having a cup longitudinal axis. The LED chip is mounted within the reflective cup with the chip longitudinal axis angled from the cup longitudinal axis.

Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.

Abstract: LED devices includes a lead frame having a reflector cup with a round bottom surface and a wall surface having a variable inclination with respect to the bottom surface and defining an opening at an upper end thereof. An LED is mounted on the bottom surface of the reflector cup, and an LED module includes first and second LED device that emit different colors. The first and second LED devices have substantially matched far field patterns in a first and second direction, where a first viewing angle in the first direction is less than about 99°.

Abstract: A surface mount LED package includes a lead frame carrying a plurality of LEDs and a plastic casing at least partially encasing the lead frame. The lead frame includes an electrically conductive chip carrier and first, second, and third electrically conductive connection parts separate from the electrically conductive chip carrier. Each of the first, second and third electrically conductive connection parts has an upper surface, a lower surface, and a connection pad on the upper surface. The plurality of LEDs are disposed on an upper surface of the electrically conductive chip carrier. Each LED has a first electrical terminal electrically coupled to the electrically conductive chip carrier. Each LED has a second electrical terminal electrically coupled to the connection pad of a corresponding one of the first, second, and third electrically conductive connection parts.

Abstract: Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

Abstract: A light emitting device includes a p-type semiconductor layer, an n-type semiconductor layer and an active region between the p-type semiconductor layer and the n-type semiconductor layer. A bond pad is provided on one of the p-type semiconductor layer or the n-type semiconductor layer, opposite the active region, the bond pad being electrically connected to the one of the p-type semiconductor layer or the n-type semiconductor layer. A conductive finger extends from and is electrically connected to the bond pad. A reduced conductivity region is provided in the light emitting device that is aligned with the conductive finger. A reflector may also be provided between the bond pad and the reduced conductivity region. A reduced conductivity region may also be provided in the light emitting device that is not aligned with the bond pad.

Abstract: An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Abstract: Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum.

Abstract: An LED package and a lead frame include a reflector cup having a bottom surface with an LED asymmetrically positioned on the bottom surface and a wall surface inclined relative to the bottom surface and defining an opening at an upper end thereof. The bottom surface of the reflector cup has a first axial dimension along a first axis and a second axial dimension along a second axis, orthogonal to the first axis. A display having an asymmetrical FFP and asymmetrical screen curve includes an array of the LED modules including a plurality of LED packages. At least some of the LED packages include a dome-shaped lens asymmetrically positioned with respect to a geometric center of the bottom surface of the reflector cup.

Abstract: Light emitting devices include an active region of semiconductor material and a first contact on the active region. The first contact is configured such that photons emitted by the active region pass through the first contact. A photon absorbing wire bond pad is provided on the first contact. The wire bond pad has an area less than the area of the first contact. A reflective structure is disposed between the first contact and the wire bond pad such that the reflective structure has substantially the same area as the wire bond pad. A second contact is provided opposite the active region from the first contact. The reflective structure may be disposed only between the first contact and the wire bond pad. Methods of fabricating such devices are also provided.