Patents by Inventor David Yang

David Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11072685
    Abstract: Fiber-reinforced terephthalate-co-4,4?-bibenzoate copolyester behaves like a liquid crystalline polymer, providing fast crystallization, short cycling times, high Tg and Tm, high strength and stiffness, while the viscosity is unexpectedly reduced at a low fiber loading ratio. In an injection molding process, the viscosity of the fiber reinforced copolyester at low fiber loading is reduced by increasing the fiber loading.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: July 27, 2021
    Assignees: ExxonMobil Chemical Patents Inc, Case Western Reserve University
    Inventors: David A. Schiraldi, Hua Sun, Yong Yang
  • Publication number: 20210224584
    Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for clustering data are disclosed. In one aspect, a method includes the actions of receiving feature vectors. The actions further include accessing rules that each relate one or more values of the feature vectors to a respective label of a plurality of labels. The actions further include, based on the rules, generating heuristics that each identify related values of the feature vectors. The actions further include, for each of the heuristics, generating a matrix that reflects a similarity of the feature vectors. The actions further include, based on the matrices that each reflects a respective similarity of the feature vectors, generating clusters that each include a subset of the feature vectors. The actions further include, for each cluster, determining a label of the plurality of labels.
    Type: Application
    Filed: January 16, 2020
    Publication date: July 22, 2021
    Inventors: Maziyar Baran Pouyan, Yao A. Yang, Saeideh Shahrokh Esfahani, Andrew E. Fano, David William Vinson, Timothy M. Shea
  • Publication number: 20210223049
    Abstract: Aspects of the disclosed invention relate to alignment of standard definition (SD) maps and high definition (HD maps) which may come from different sources. Responsive to input of a destination, a route to that destination may be defined, and SD map waypoints generated from that defined route. A graph may be generated from the HD map. The waypoints may be matched with nodes and edges in the graph. One or more edges may constitute a segment in the HD map. A plurality of segments are identified to match the route.
    Type: Application
    Filed: April 5, 2021
    Publication date: July 22, 2021
    Inventors: David Keith Johnson, Christopher Ian MacDonald, Shu Yang, Vincent Michael Howard
  • Publication number: 20210226811
    Abstract: A system comprises premises equipment including premises devices located at a premises. The system includes a partner device located at the premises and configured to use a partner protocol different from a protocol of the premises equipment. The system includes a system server configured to interact with the premises devices. The system server is configured to interact with the partner device via a partner proxy corresponding to the partner device. The system includes automation rules coupled to the system server. The automation rules include actions and triggers for controlling interactions between at least one of the partner device and the premises devices. The system includes a user interface coupled to the system server and configured to interact with the premises devices and the partner device.
    Type: Application
    Filed: November 10, 2020
    Publication date: July 22, 2021
    Inventors: Jim KITCHEN, David PROFT, Weiping GUO, Kyle MCKENZIE, Thomas LEA, John ELDERTON, Nathan YANG
  • Patent number: 11064846
    Abstract: A soap dispenser can be configured to dispense an amount of liquid soap, for example, upon detecting the presence of an object. Certain embodiments of the dispenser include a housing, reservoir, pump, motor, sensor, electronic processor, and nozzle. In certain embodiments, the sensor can be configured to generate a signal based on a distance between an object and the sensor. In certain embodiments, the electronic processor can be configured to receive the signal from the sensor and to determine a dispensation volume of the liquid. The dispensation volume can vary as a function of the distance between the object and the sensor. The processor can be configured to control the motor to dispense approximately the dispensation volume of the liquid.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: July 20, 2021
    Assignee: simplehuman, LLC
    Inventors: Frank Yang, David Wolbert, Joseph Sandor, Orlando Cardenas, Guy Cohen
  • Publication number: 20210216121
    Abstract: Techniques for liquid cooling interfaces with rotatable connector assemblies are disclosed. In one embodiment, a collar contacts flanges on two components of a connector assembly, preventing them from separating. In another embodiment, a housing is positioned around a stem component. The stem component has a gap between a top part and a bottom part held apart by pillars, allowing water to flow to a tubing fitting connected to the housing. A retainer on top of the stem component holds the housing in place. In yet another embodiment, an internal retainer holds a housing component in place over a stem. Other embodiments are disclosed.
    Type: Application
    Filed: March 26, 2021
    Publication date: July 15, 2021
    Applicant: Intel Corporation
    Inventors: Kristin L. Weldon, David Rodriguez, Jin Yang, David Shia, Jimmy Chuang, Mohanraj Prabhugoud, Mark Edmund Sprenger
  • Publication number: 20210214823
    Abstract: Disclosed herein are embodiments of an Al—Ce—Mn alloy for use in additive manufacturing. The disclosed alloy embodiments provide fabricated objects, such as bulk components, comprising a heterogeneous microstructure and having good mechanical properties even when exposed to conditions used during the additive manufacturing process. Methods for making and using alloy embodiments also are disclosed herein.
    Type: Application
    Filed: June 5, 2020
    Publication date: July 15, 2021
    Inventors: Lawrence Allard, JR., Sumit Bahl, Ryan Dehoff, Hunter Henderson, Michael Kesler, Scott McCall, Peeyush Nandwana, Ryan Ott, Alex Plotkowski, Orlando Rios, Amit Shyam, Zachary Sims, Kevin Sisco, David Weiss, Ying Yang
  • Publication number: 20210216813
    Abstract: Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for clustering data are disclosed. In one aspect, a method includes the actions of receiving feature vectors. The actions further include, for a subset of the feature vectors, accessing a first label. The actions further include generating a classifier that is configured to associate a given feature vector with a feature vector of the subset of the feature vectors. The actions further include applying the feature vectors that are not included in the subset of the feature vectors to the classifier. The actions further include generating a dissimilarity matrix. The actions further include, based on the dissimilarity matrix, generating a graph. The actions further include, for each node of the graph, determining a second label. The actions further include, based on the second labels and the first labels, determining a training label for each feature vector.
    Type: Application
    Filed: January 15, 2020
    Publication date: July 15, 2021
    Inventors: Maziyar Baran Pouyan, Yao A. Yang, Saeideh Shahrokh Esfahani, Andrew E. Fano, David William Vinson, Timothy M. Shea, Jesus Sanchez-Macias
  • Publication number: 20210219459
    Abstract: An apparatus is described. The apparatus includes a cold plate having columns of fluidic channels. The fluidic channels have a length such that coolant that flows through the fluidic channels will be composed less of vapor than of liquid and a mix of liquid and vapor over a rated power range of one or more semiconductor chips that are cooled by the cold plate.
    Type: Application
    Filed: March 8, 2021
    Publication date: July 15, 2021
    Inventors: Jin YANG, David SHIA, Mohanraj PRABHUGOUD
  • Publication number: 20210200102
    Abstract: A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.
    Type: Application
    Filed: July 27, 2020
    Publication date: July 1, 2021
    Inventors: Chansyun David YANG, Keh-Jeng CHANG, Chan-Lon YANG
  • Publication number: 20210119012
    Abstract: A structure and a formation method of a semiconductor device are provided. The method includes forming a dummy gate stack over a semiconductor substrate and forming a spacer element over a sidewall of the dummy gate stack. The spacer element has an inner spacer and a dummy spacer, and the inner spacer is between the dummy spacer and the dummy gate stack. The method also includes forming a dielectric layer to surround the spacer element and the dummy gate stack and replacing the dummy gate stack with a metal gate stack. The method further includes removing the dummy spacer of the spacer element to form a recess between the inner spacer and the dielectric layer. In addition, the method includes forming a sealing element to seal the recess such that a sealed hole is formed between the metal gate stack and the dielectric layer.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 22, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chansyun David YANG, Li-Te LIN
  • Publication number: 20210111071
    Abstract: A semiconductor device such as a fin field effect transistor and its method of manufacture are provided. In some embodiments gate spacers are formed over a semiconductor fin, and a first gate stack is formed over the fin. A first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack, and a second sacrificial material with a large selectivity is formed over a source/drain contact plug. Etching processes are utilized to form openings through the first sacrificial material and through the second sacrificial material, and the openings are filled with a conductive material.
    Type: Application
    Filed: December 7, 2020
    Publication date: April 15, 2021
    Inventors: Chan Syun David Yang, Li-Te Lin, Chun-Jui Huang
  • Publication number: 20210098598
    Abstract: The present disclosure describes a method for forming gate spacer structures with air-gaps to reduce the parasitic capacitance between the transistor's gate structures and the source/drain contacts. In some embodiments, the method includes forming a gate structure on a substrate and a spacer stack on sidewall surfaces of the gate structure—where the spacer stack comprises an inner spacer layer in contact with the gate structure, a sacrificial spacer layer on the inner spacer layer, and an outer spacer layer on the sacrificial spacer layer. The method further includes removing the sacrificial spacer layer to form an opening between the inner and outer spacer layers, depositing a polymer material on top surfaces of the inner and outer spacer layers, etching top sidewall surfaces of the inner and outer spacer layers to form a tapered top portion, and depositing a seal material.
    Type: Application
    Filed: November 21, 2019
    Publication date: April 1, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventor: Chansyun David Yang
  • Patent number: 10953497
    Abstract: A method of laser welding a workpiece stack-up (10) of overlapping steel workpieces (12, 14) involves heat-treating a region (64) of the stack-up (10) followed by forming a laser weld joint (66) that is located at least partially within the heat-treated region (64). During heat-treating, one or more pre-welding laser beams (68) are sequentially directed at a top surface (20) of the workpiece stack-up (10) and advanced along a pre-welding beam travel pattern (70) so as to reduce an amount of vaporizable zinc within the stack-up (10). Thereafter, the laser weld joint (66) is formed by directing a welding laser beam (82) at the top surface (20) of the workpiece stack-up (10) and advancing the welding laser beam (82) along a welding beam travel pattern (84) that at least partially overlaps with a coverage area of a pre-welding beam travel pattern (70) or a shared coverage area portion of multiple pre-welding beam travel patterns (70).
    Type: Grant
    Filed: November 23, 2016
    Date of Patent: March 23, 2021
    Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: Hui-Ping Wang, Yu Pan, Blair E. Carlson, Joshua L. Solomon, William P. Payne, David Yang, Wu Tao
  • Patent number: 10953494
    Abstract: A method of laser welding a workpiece stack-up (10) that includes at least two overlapping metal workpieces (12, 14) comprises advancing a laser beam (24) relative to a plane of a top surface (20) of the workpiece stack-up (10) from a start point (84) to an end point (86) along a beam travel pattern (78) at a high laser beam travel speed of greater than 8 meters per minute. The two or more overlapping metal workpieces (12, 14) may be steel workpieces or they may be aluminum workpieces, and at least one of the metal workpieces (12, 14) includes a surface coating (40). Advancing the laser beam (24) along the beam travel pattern (78) forms a weld joint (76), which includes resolidified composite workpiece material derived from each of the metal workpieces (12, 14) penetrated by a molten weld pool (80), that fusion welds the metal workpieces (12, 14) together. The relatively high laser beam travel speed contributes to improve strength properties of the weld joint (76).
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: March 23, 2021
    Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: David Yang, Wu Tao
  • Publication number: 20210083074
    Abstract: The structure of a semiconductor device with negative capacitance (NC) dielectric structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure with a fin base portion and a fin top portion on a substrate, forming a spacer structure in a first region of the fin top portion, and forming a gate structure on a second region of the fin top portion. The spacer structure includes a first NC dielectric material and the gate structure includes a gate dielectric layer with a second NC dielectric material different from the first NC dielectric material.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chansyun David YANG, Keh-Jeng CHANG, Chan-Lon YANG
  • Patent number: 10946479
    Abstract: A method of laser welding a workpiece stack-up (10) that includes at least two overlapping aluminum workpieces comprises advancing a laser beam (24) relative to a plane of a top surface (20) of the workpiece stack-up (10) and along a beam travel pattern (74) that lies within an annular weld area (82) defined by an inner diameter boundary (86) and an outer diameter boundary (84) on the plane of the top surface (20). The beam travel pattern (74) of the laser beam (24) surrounds a center area encircled by the annular weld area (82) on the plane of the top surface (20) so as to force entrained porosity inwards into a region of the weld joint (72) beneath the center area on the plane of the top surface (20) of the workpiece stack-up (10).
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: March 16, 2021
    Assignee: GM GLOBAL TECHNOLOGY OPERATIONS LLC
    Inventors: David Yang, Wu Tao
  • Publication number: 20210066490
    Abstract: The current disclosure describes techniques for forming a gate-all-around device where semiconductor layers are released by etching out the buffer layers that are vertically stacked between semiconductor layers in an alternating manner. The buffer layers stacked at different vertical levels include different material compositions, which bring about different etch rates with respect to an etchant that is used to remove at least partially the buffer layers to release the semiconductor layers.
    Type: Application
    Filed: September 3, 2019
    Publication date: March 4, 2021
    Inventors: Chansyun David Yang, Han-Yu Lin, Chun-Yu Chen, Chih-Ching Wang, Fang-Wei Lee, Tze-Chung LIN, Li-Te LIN, Gwan-Sin Chang, Pinyen LIN
  • Publication number: 20200405899
    Abstract: A portable sanitizing apparatus, such as a case, includes a first case portion arranged to receive an object to be sanitized, and a second case portion connected to the first case portion and including at least one UV light source configured to emit UV electromagnetic radiation. The second case portion includes an expansion member having a collapsed configuration and an expanded configuration. When the expansion member is in the expanded configuration, a distance between the second case portion and the first case portion is increased compared to when the expansion member is in the collapsed configuration, thereby increasing a distance from the at least one UV light source to the object to be sanitized.
    Type: Application
    Filed: June 25, 2020
    Publication date: December 31, 2020
    Inventors: David YANG, Deepa MANI, Thomas GALLOWAY
  • Publication number: 20200388529
    Abstract: A semiconductor structure includes a semiconductor substrate, a metal layer, an interlayer dielectric (ILD) layer. The metal layer is disposed over the semiconductor substrate. The ILD layer is over the semiconductor substrate and laterally surrounding the metal layer, in which the ILD layer has a first portion in contact with a first sidewall of the metal layer and a second portion in contact with a second sidewall of the metal layer opposite to the first sidewall of the metal layer, and a width of the first portion of the ILD layer decreases as a distance from the semiconductor substrate increases.
    Type: Application
    Filed: August 21, 2020
    Publication date: December 10, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Shan CHEN, Chan-Syun David YANG, Li-Te LIN, Pin-Yen LIN