Abstract: An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation segment coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.

Abstract: An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation section coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.

Abstract: An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation section coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.

Abstract: An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide (SiO2) layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

Abstract: A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.

Abstract: An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

Abstract: An optical transceiver comprising an optical signal input, a first modulation section coupled to the optical signal input, a second modulation segment coupled to the optical signal input and positioned in serial with the first modulation section, wherein the first modulation section comprises a first digital electrical signal input, a first digital driver coupled to the first digital electrical signal input, and a first modulator coupled to the first digital driver, and wherein the second modulation section comprises a second digital electrical signal input, a second digital driver coupled to the second digital electrical signal input, and a second modulator coupled to the second digital driver, and an optical signal output coupled to the first modulation section and the second modulation section.

Abstract: A tunable optical system with hybrid integrated semiconductor laser is provided. The optical system includes a silicon-on-insulator (SOI) substrate; a first optical waveguide tunable comb filter formed at the first side of the SOI substrate; a second optical waveguide tunable comb filter with detuned filter response formed at the first side of the SOI substrate; an etched laser pit at the first side of the SOI substrate; a plurality of spacers formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; a plurality of bumping pads formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; and a laser chip flip-chip bonded at the first side of the SOI substrate supported by the spacers. Heating sections may be provided on the filters to tune the filters.

Abstract: An optical system includes a silicon substrate, a 45-degree or 54.7-degree reflector formed in the silicon substrate, deeply etched double U-shape trenches formed in the silicon substrate, a thin film disposed on the reflector surface with total or partial optical refection, a top and bottom surface contacted p-i-n structure formed in the silicon substrate for optical power monitoring, a plurality of rectangular or wedge shaped spacers formed on top surface of the silicon substrate, and a surface emitting light source flip-chip bonded on the silicon substrate via the spacers.

Abstract: A Ge waveguide photo-detector fabricated on a silicon-on-insulator substrate is provided. It comprises a Ge waveguide detector end-coupled to a light-signal-carrying silicon waveguide, both disposed on a silicon-on-insulator (SOI) substrate. An electrical field is established along the direction of light propagation inside the Ge waveguide detector by doping the two opposite ends of the Ge detector with P or N type dopants. In result the height and width of the Si waveguide is decoupled from the speed of the Ge detector.

Abstract: A Ge waveguide photo-detector fabricated on a silicon-on-insulator substrate is provided. It comprises a Ge waveguide detector end-coupled to a light-signal-carrying silicon waveguide, both disposed on a silicon-on-insulator (SOI) substrate. An electrical field is established along the direction of light propagation inside the Ge waveguide detector by doping the two opposite ends of the Ge detector with P or N type dopants. In result the height and width of the Si waveguide is decoupled from the speed of the Ge detector.

Abstract: A tunable optical system with hybrid integrated semiconductor laser is provided. The optical system includes a silicon-on-insulator (SOI) substrate; a first optical waveguide tunable comb filter formed at the first side of the SOI substrate; a second optical waveguide tunable comb filter with detuned filter response formed at the first side of the SOI substrate; an etched laser pit at the first side of the SOI substrate; a plurality of spacers formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; a plurality of bumping pads formed on the bottom surface of the laser pit near the plane of the first side of the SOI substrate; and a laser chip flip-chip bonded at the first side of the SOI substrate supported by the spacers. Heating sections may be provided on the filters to tune the filters.

Abstract: An optical system and a method of fabrication are provided. The optical system includes a substrate and at least one hole extending from a second side of the substrate towards a first side of the substrate and configured to receive at least one optical fiber. The substrate includes at least one photodetector at the first side or between the at least one hole and the first side and configured to be in an optical path of an optical signal emitted from the at least one optical fiber or transmitted through the first side to the at least one optical fiber.

Abstract: The system includes a light-transmitting medium positioned on a base. The light-transmitting medium included a ridge and a slab region. The ridge extends upward from the slab region and defines a portion of a waveguide on the base. The waveguide is configured to guide a light signal through the device. The device also includes an avalanche effect light sensor positioned on the base and configured to detect the presence of the light signal. The light sensor includes a light-absorbing medium positioned on the ridge of the light-transmitting medium such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium. The light-transmitting includes a charge layer located at an interface of the light-transmitting medium and the light-absorbing medium. A multiplication region is formed in the slab regions of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during the operation of the light sensor.

Abstract: An optical system includes a silicon substrate, a 45-degree or 54.7-degree reflector formed in the silicon substrate, deeply etched double U-shape trenches formed in the silicon substrate, a thin film disposed on the reflector surface with total or partial optical refection, a top and bottom surface contacted p-i-n structure formed in the silicon substrate for optical power monitoring, a plurality of rectangular or wedge shaped spacers formed on top surface of the silicon substrate, and a surface emitting light source flip-chip bonded on the silicon substrate via the spacers.

Abstract: A photocarrier-injecting variable optical attenuator that operates by injecting photocarriers into a light transmitting waveguide from a second, injection light source. The light transmitting waveguide may be defined by a ridge extending from a slab of a light transmitting medium. The light transmitting waveguide is transparent to signal light. Light emitted from the second, injection light source is optically absorbed by the light transmitting waveguide to introduce photocarriers in a plurality of configurations, thereby attenuating the signal light.

Abstract: An optical system and method for coupling optical devices and an optical fiber array are provided. The optical system includes a substrate comprising a first side and a second side facing generally opposite to the first side. The optical system further includes at least one optical waveguide extending along at least a portion of the first side, at least one hole extending from the second side towards the first side, and at least one reflective element at the first side. The at least one reflective element is in optical communication with the at least one optical waveguide and with the at least one hole. The at least one reflective element is configured to deflect light between the at least one optical waveguide and the at least one hole.

Abstract: An optical device includes a light-transmitting medium positioned on a base. The light-transmitting medium defines a waveguide. The optical device also includes a light sensor. The light sensor includes a light-absorbing medium positioned on the base. A portion of the waveguide ends at a facet such that a first portion of a light signal being guided by the wavegide passes through the facet and a second portion of the light signal bypasses the facet and remains in the light-transmitting medium. The light-absorbing medium is positioned on the light-transmitting medium such that the light-transmitting medium is between the light-absorbing medium and the base. Additionally, the light-absorbing medium is positioned on the light-transmitting medium such that the light-absorbing medium receives the first portion of the light signal that passes through the facet.

Abstract: The device includes an optical waveguide on a base. The waveguide is configured to guide a light signal through a light-transmitting medium. A light sensor is also positioned on the base. The light sensor including a ridge extending from slab regions. The slab regions are positioned on opposing sides of the ridge. A light-absorbing medium is positioned to receive at least a portion of the light signal from the light-transmitting medium included in the waveguide. The light-absorbing medium is included in the ridge and also in the slab regions. The light-absorbing medium includes doped regions positioned such that an application of a reverse bias across the doped regions forms an electrical field in the light-absorbing medium included in the ridge.

Abstract: The system includes a light-transmitting medium positioned on a base. The light-transmitting medium included a ridge and a slab region. The ridge extends upward from the slab region and defines a portion of a waveguide on the base. The waveguide is configured to guide a light signal through the device. The device also includes an avalanche effect light sensor positioned on the base and configured to detect the presence of the light signal. The light sensor includes a light-absorbing medium positioned on the ridge of the light-transmitting medium such that the light signal is coupled from the light-transmitting medium into the light-absorbing medium. The light-transmitting includes a charge layer located at an interface of the light-transmitting medium and the light-absorbing medium. A multiplication region is formed in the slab regions of the light-transmitting medium such that the multiplication region receives charge carriers from the charge layer during the operation of the light sensor.