Abstract: In an embodiment, a device includes: a first semiconductor strip over a substrate, the first semiconductor strip including a first channel region; a second semiconductor strip over the substrate, the second semiconductor strip including a second channel region; a dielectric strip disposed between the first semiconductor strip and the second semiconductor strip, a width of the dielectric strip decreasing along a first direction extending away from the substrate, the dielectric strip including a void; and a gate structure extending along the first channel region, along the second channel region, and along a top surface and sidewalls of the dielectric strip.

Abstract: A portable confocal optical scanning microscopic device includes an optical path module, a light source module, a light receiving module and an object stage, wherein the optical path module includes a beam splitter and a focusing lens; the light source module includes a light generator for generating an incident light and can be injected into the beam splitter; the light receiving module includes a spatial filter; the object stage is for setting a test specimen. The optical path module, the light source module, the light receiving module, and the object stage can be disassembled and assembled on the operating board to flexibly configure an adaptive combination capable of performing the optical scanning.

Abstract: The present invention relates to processes for the preparation of biofuel from biomass by fast hydropyrolysis or fast pyrolysis, using hydrogen generated by sorption enhanced steam reforming. The present invention also relates to fixed bed tandem catalytic-upgrading processes, and reactors and hydrodeoxygenation (HDO) catalysts useful in those processes.

Abstract: A system, method, and/or non-transitory computer readable medium may implement or be configured to implement the following computational operations associated with electrochemical or vapor phase deposition: (a) defining an interface of a substrate where deposition of a deposited material is to occur or is occurring; (b) using a computational model of the deposition to determine a local deposition rate of the deposited material at multiple locations on the interface, where the computational model of the deposition computes the local deposition rate as a function of one or more geometric parameters of the one or more recessed or protruding features; and (c) computationally adjusting the location of the interface to produce an adjusted interface.

Abstract: A system and method for image-guided microscopic illumination are provided. A processing module controls an imaging assembly such that a camera acquires an image or images of a sample in multiple fields of view, and the image or images are automatically transmitted to a processing module and processed by the first processing module automatically in real-time based on a predefined criterion so as to determine coordinate information of an interested region in each field of view. The processing module also controls an illuminating assembly to illuminate the interested region of the sample according to the received coordinate information regarding to the interested region, with the illumination patterns changing among the fields of view.

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Abstract: Disclosed herein is a gas capture system that includes a gas inlet arranged to receive a gas flow into the system; a gas outlet arranged to provide a gas flow out of the system; a gas capture region for mass transfer between a gas and a sorbent of the gas; and a sorbent regeneration region for regenerating the sorbent by heating the sorbent so that the sorbent releases a gas.

Abstract: A transformer includes iron cores and a winding structure. The iron cores are stacked on each other at intervals, and iron core gaps are formed between the iron cores, wherein relative positions between the iron core gaps are fixed. The winding structure is disposed around the iron cores and includes a plurality of coils. A position of at least one of the iron core gaps corresponds to a position of at least one of coils.

Abstract: Systems and methods for performing local Critical Dimension Uniformity (CDU) modeling in a virtual fabrication environment are discussed. More particularly, local CD variance is replicated in the virtual fabrication environment in order to produce a CDU mask that can be used during a virtual fabrication sequence to produce more accurate results reflecting the CD variance of features that occurs in a pattern for a semiconductor device being physically fabricated.

Abstract: Compositions including photoreactive and cleavable probes and methods of using the probes. The probes may include a tag conjugatable to a label, a cleavable linker linkable to a bait molecule, and a light activated warhead. The compositions and methods may be useful for analyzing biomolecules.

Abstract: A welding quality detection system and an ultrasonic welding device, and a welding quality detection method are disclosed. The welding quality detection system includes a detection module, a control module and a display module. The detection module is configured for collecting a transverse friction force and a longitudinal welding pressure of a welded workpiece. The control module is electrically connected with the detection module, and the control module is configured for receiving, analyzing and processing a transverse friction force signal and a longitudinal welding pressure signal of the detection module. The display module is electrically connected with the control module, and the display module is configured for displaying analysis results of the control module. According to the application, a welding quality of the welded workpiece can be effectively detected, and a welding defect can be found in real time.

Abstract: Compositions including photoreactive and cleavable probes and methods of using the probes. The probes may include a tag conjugatable to a label, a cleavable linker linkable to a bait molecule, and a light-activated warhead. The compositions and methods may be useful for analyzing biomolecules.

Abstract: Systems and methods for performing depth-dependent oxidation modeling and depth-dependent etch modeling in a virtual fabrication environment are discussed. More particularly, a virtual fabrication environment models, as part of a process sequence, oxidant dispersion in a depth-dependent manner and simulates the subsequent oxidation reaction based on the determined oxidant thickness along an air/silicon interface. Further the virtual fabrication environment performs depth-dependent etch modeling as part of a process sequence to determine etchant concentration and simulate the etching of material along an air/material interface.

Abstract: The present disclosure, in some embodiments, relates to a method of developing a photosensitive material. The method includes forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation focused at a plurality of different heights over the substrate. The plurality of different heights are vertically separated from one another and are disposed within the photosensitive material along a vertical path that extends in a direction perpendicular to an upper surface of the photosensitive material. The photosensitive material is developed to remove a soluble region.

Abstract: A fully automatic mask production line is disclosed, including a mask material loading device, a folding device, a nose wire loading device, a mask body forming device, a mask overturning and conveying device, an ear loop welding device and a collecting device. The mask material loading device is adjacent to the folding device, the nose wire loading device is adjacent to the folding device, a feeding end of the mask body forming device is arranged opposite to the nose wire loading device and the folding device respectively, the mask overturning and conveying device is adjacent to the mask body forming device, and the ear loop welding device and the collecting device are respectively arranged on a conveying path and a conveying tail end of the mask overturning and conveying device.

Abstract: A method of forming a semiconductor device includes loading a first wafer and a second wafer into a wafer bonding system. A relative humidity within the wafer bonding system is measured a first time. After measuring the relative humidity, the relative humidity within the wafer bonding system may be adjusted to be within a desired range. When the relative humidity is within the desired range, the first wafer is bonded to the second wafer.

Abstract: The present disclosure provides a substrate bonding apparatus capable of temperature monitoring and temperature control. The substrate bonding apparatus comprises a fluid cooling module and a sensor module for detecting temperatures at multiple zones (e.g., two or more zones) within a substrate. The substrate bonding apparatus according to the present disclosure achieves temperature stabilization within the substrate. The substrate bonding apparatus further improves bonding process performance by reducing distortion residual, reducing bubbles on edges of the substrate, and reducing non-bonded area within the substrate.

Abstract: In an embodiment, a wafer bonding system includes a chamber, a gas inlet and a gas outlet configured to control a pressure of the chamber to be in a range from 1×10?2 mbar to 1520 torr, a first wafer chuck having a first surface to support a first wafer, and a second wafer chuck having a second surface to support a second wafer, the second surface being opposite the first surface, the second wafer chuck and the first wafer chuck being movable relative to each other, wherein the second surface that supports the second wafer is divided into zones, wherein a vacuum pressure of each zone is controlled independently of other zones.

Abstract: A method includes placing a first wafer on a first wafer stage, placing a second wafer on a second wafer stage, and pushing a center portion of the first wafer to contact the second wafer. A bonding wave propagates from the center portion to edge portions of the first wafer and the second wafer. When the bonding wave propagates from the center portion to the edge portions of the first wafer and the second wafer, a stage gap between the top wafer stage and the bottom wafer stage is reduced.

Abstract: Wafer bonding apparatus and method are provided. A method includes performing a first plasma activation process on a first surface of a first wafer. The first plasma activation process forms a first high-activation region and a first low-activation region on the first surface of the first wafer. A first cleaning process is performed on the first surface of the first wafer. The first cleaning process forms a first plurality of silanol groups in the first high-activation region and the first low-activation region. The first high-activation region includes more silanol groups than the first low-activation region. The first wafer is bonded to a second wafer.