Abstract: Apparatus and methods are provided for TxRU carrier switch. In one embodiment, the UE is configured with an anchor carrier in an anchor cell and one or more secondary carriers. In one embodiment, the TxRU carrier switch is configured as supplementary uplink (SUL)-based carrier switch with supplementary carriers or configured as a CA-based carrier switch with supplementary cells. In one embodiment, the one or more secondary carriers are supplementary carriers of the anchor cell, and wherein the anchor carrier is TDD carrier or frequency division duplex (FDD) carrier, and wherein the supplementary carrier is configured as a TDD carrier, a FDD carrier, a supplementary uplink carrier (SUL), or a supplementary downlink carrier (SDL). In another embodiment, the one or more secondary carriers are supplementary cells different from the anchor cell, and wherein the supplementary cells are configured with MAC control element (CE).

Abstract: Various solutions for supporting an advanced mobile communication system with enhanced channel designs are described. An apparatus may select a first number of resource blocks (RBs) from a second number of RBs on a physical broadcast channel (PBCH) in an event that the apparatus is operating in a frequency band with a transmission bandwidth less than a threshold. Then, the apparatus may perform a PBCH transmission to a user equipment (UE) based on the first number of RBs.

Abstract: Various solutions for low-power wake-up signal (LP-WUS) monitoring with respect to user equipment and network node in mobile communications are described. An apparatus may receive a configuration from a network node. The apparatus may comprise a main radio (MR) and a lower-power wake-up radio (LP-WUR). The apparatus may determine whether to activate or deactivate a low-power wake-up signal (LP-WUS) monitoring by the LP-WUR according to at least one pre-configured condition in the configuration. The apparatus may receive an LP-WUS from the network node via the LP-WUR in an event that the LP-WUS monitoring is activated.

Abstract: Disclosed are a chip protective film, a method for manufacturing the same, and a chip, which relate to the technical field of electronic chip protective films. The chip protective film includes: a first protective layer, and a second protective layer attached to at least a portion of a surface of the first protective layer. The second protective layer includes by mass: 90%-97% acrylate compounds; 0.1-5% fluorine-containing compounds; and a second adjuvant. The chip protective film features strong adhesion, low friction coefficient, high hardness, and good scratch resistance, which effectively solves the technical problem in the prior art that chip protective films are not scratch resistant.

Abstract: A chassis quick release device includes a housing including a base with a connected sliding channel and accommodating space therein and a cover assembled with the base, a locking block linearly movably set in the accommodating space, and an operating handle having a rod body positioned on the sliding channel and a grip assembled with the rod body. The rod body has a cylindrical joint that corresponds to the grip and has a shaft groove defined therein. The grip is provided with a sleeve corresponding to the cylindrical joint and defining therein an accommodating cavity. Moving the operating handle in the direction of the housing causes the locking block to slide out from the accommodating space to form a locked state. Pulling the operating handle away from the housing causes the locking block to move linearly in a second direction to form an unlocked state.

Abstract: Various solutions for extended reality (XR) enhancement in mobile communications are described. An apparatus establishes a communication with a network node of a wireless network. The apparatus performs an operation with respect to XR-related computation offloading from a user end to result in XR enhancement at the user end.

Abstract: A method includes depositing a dielectric cap over a gate structure. A source/drain contact is formed over a source/drain region adjacent to the gate structure. A top of the dielectric cap is oxidized. After oxidizing the top of the dielectric cap, an etch stop layer is deposited over the dielectric cap and an interlayer dielectric (ILD) layer over the etch stop layer. The ILD layer and the etch stop layer are etched to form a via opening extending though the ILD layer and the etch stop layer. A source/drain via is filled in the via opening.

Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: Various solutions for low-power wake-up signal (LP-WUS) design with respect to user equipment and network node in mobile communications are described. An apparatus may receive a LP-WUS configuration from a network node. The apparatus may receive a LP-WUS based on the LP-WUS configuration from the network node. The apparatus may determine whether to wake up according to the LP-WUS. The LP-WUS with N subcarriers (SCs) is generated through a transformation of M-bit on-off keying (OOK) in a time domain. The transformation is a discrete Fourier transform (DFT) or least square operation. K samples are generated from the M bits with a signal modification or a signal truncation. The LP-WUS is generated through an inverse fast Fourier transform (IFFT) operation. The K is a size of the IFFT operation of cyclic-prefix orthogonal frequency-division multiple access (CP-OFDMA). The N is less than or equal to the K.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be a UE. The UE receives, in a first slot and from a base station, a first signal that is a downlink data signal in a first frequency resource allocation. The UE communicates, with the base station, a second signal in a second slot. A configured time gap between the first slot and the second slot is according to a comparison of the first frequency resource allocation and a second frequency resource allocation.

Abstract: A micro light-emitting diode is provided. The micro light-emitting diode includes a first-type semiconductor layer having a first doping type; a light-emitting layer over the first-type semiconductor layer; a first-type electrode over the first-type semiconductor layer; a second-type semiconductor layer having a second doping type over the light-emitting layer, wherein the second doping type is different from the first doping type; a second-type electrode over the second-type semiconductor layer; and a barrier layer under the first-type semiconductor layer and away from the first-type electrode and the second-type electrode, wherein the barrier layer includes a doped region having the second doping type.

Abstract: A method comprises forming a gate dielectric cap over a gate structure; forming source/drain contacts over the semiconductor substrate, with the gate dielectric cap laterally between the source/drain contacts; depositing an etch-resistant layer over the gate dielectric cap; depositing a contact etch stop layer over the etch-resistant layer and an interlayer dielectric (ILD) layer over the contact etch stop layer; performing a first etching process to form a via opening extending through the ILD layer and terminating prior to reaching the etch-resistant layer; performing a second etching process to deepen the via opening such that one of the source/drain contacts is exposed, wherein the second etching process etches the etch-resistant layer at a slower etch rate than etching the contact etch stop layer; and depositing a metal material to fill the deepened via opening.

Abstract: A double-sided loudspeaker includes a first speaker base and a second speaker base assembled with each other and provided with a ventilation hole; a first side magnetic plate injection molded at the first speaker base or the second speaker base; a second side magnetic plate injection molded at the first speaker base or the second speaker base; a magnetic member disposed between the first side magnetic plate and the second side magnetic plate and including a main magnetic plate, a first magnetic unit and a second magnetic unit; a first diaphragm disposed at the first speaker base; a first voice coil disposed at the first diaphragm and movably arranged at the first magnetic unit; a second diaphragm disposed at the second speaker base; and a second voice coil disposed at the second diaphragm and movably arranged at the second magnetic unit.

Abstract: A chassis quick release device includes a housing including a base provided with a sliding channel, a compression space, and accommodating space, a rotating space and a shaft in the rotating space and covered with a cover, a locking block linearly movably set in the accommodating space and providing a guide groove, a guide chamber, a receiving groove and an elastic member set in the receiving groove, a locking member having a shaft hole coupled to the shaft, a rotary reset member positioned on the shaft, resisting edge located at one end thereof that can rotate and protrude from the housing and a locking edge located at the other end thereof, and an operating handle including a rod body positioned in the sliding channel, the guide groove and the guide chamber and mounted with a grp and having a locking portion stopped against the guide chamber.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: Various solutions for improvement of scheduling multi-cell PUSCH/PDSCH transmission with a single DCI are described. An apparatus may receive a DCI scheduling cells from a network node. The DCI includes at least one of a first DCI, a second DCI, and a third DCI. The apparatus may determine a DCI size budget of the DCI counted in one cell. The apparatus may perform a DCI decoding according to the DCI size budget and perform a PDSCH reception or a PUSCH transmission with at least one cell based on the DCI. The first DCI includes a common bit field, a first specific bit field and a plurality of designated bit fields corresponding to the cells, the second DCI includes the common bit field, a second specific bit field and a first part of the designated bit fields, and the third DCI includes a second part of the designated bit fields.

Abstract: The present disclosure provides a method for modifying a polyphenylene ether resin, a laminated film composite, a laminated film, and a substrate. The method for modifying a polyphenylene ether resin using an indene oligomer to reduce the molecular weight of the polyphenylene ether to obtain an indene oligomer-modified polyphenylene ether resin. The modified polyphenylene ether with a smaller molecular weight has a lower softening point and melting point, a better interfacial adhesion, and can be better adhered to a substrate of an integrated circuit. Meanwhile, because it has a lower dielectric constant and dielectric loss, the dielectric constant and dielectric loss of the substrate can be reduced, thereby solving the technical problem of electric leakage and heat generation caused when the existing polyphenylene ether resin is applied to an integrated circuit when the feature size of the integrated circuit is reduced.

Abstract: Examples pertaining to reference signal (RS) enhancements in mobile communications are described. An apparatus (e.g., a user equipment (UE)) may receive a minimum broadcast RS from a network node (e.g., a base station (BS)). Based on the minimum broadcast RS, the apparatus may perform basic downlink (DL) measurement. The apparatus may also receive or transmit an on-demand RS from or to the network node in a case that a triggering condition is fulfilled. Based on the on-demand RS, the apparatus may perform additional DL or uplink (UL) measurement.