Patents by Inventor Deepak Mahulikar

Deepak Mahulikar has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10364373
    Abstract: CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO) compounds that optimize various chemical reactions occurring in the slurry chemistry at elevated polishing temperatures on the wafer surface, such that removal rate variation within an individual wafer is <10%.
    Type: Grant
    Filed: October 6, 2017
    Date of Patent: July 30, 2019
    Assignee: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.
    Inventor: Deepak Mahulikar
  • Publication number: 20190105620
    Abstract: This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.
    Type: Application
    Filed: December 7, 2018
    Publication date: April 11, 2019
    Inventors: Shih-Pin Chou, Wen-Hung Chang, Deepak Mahulikar, Tamas Varga, Abhudaya Mishra
  • Patent number: 10167415
    Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.
    Type: Grant
    Filed: November 28, 2017
    Date of Patent: January 1, 2019
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: James McDonough, Laura John, Deepak Mahulikar
  • Patent number: 10159949
    Abstract: This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.
    Type: Grant
    Filed: February 14, 2017
    Date of Patent: December 25, 2018
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Shih-Pin Chou, Wen-Hung Chang, Deepak Mahulikar, Tamas Varga, Abhudaya Mishra
  • Publication number: 20180187048
    Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.
    Type: Application
    Filed: February 28, 2018
    Publication date: July 5, 2018
    Inventors: James McDonough, Laura John, Deepak Mahulikar
  • Publication number: 20180100086
    Abstract: CMP compositions providing stable and robust polishing performance at elevated pad or wafer surface temperatures are disclosed, as well as methods for use thereof. The compositions of the disclosure include reaction rate optimizing (RRO) compounds that optimize various chemical reactions occurring in the slurry chemistry at elevated polishing temperatures on the wafer surface, such that removal rate variation within an individual wafer is <10%.
    Type: Application
    Filed: October 6, 2017
    Publication date: April 12, 2018
    Inventor: Deepak Mahulikar
  • Publication number: 20180079931
    Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.
    Type: Application
    Filed: November 28, 2017
    Publication date: March 22, 2018
    Inventors: James McDonough, Laura John, Deepak Mahulikar
  • Patent number: 9914852
    Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.
    Type: Grant
    Filed: August 19, 2014
    Date of Patent: March 13, 2018
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: James McDonough, Laura John, Deepak Mahulikar
  • Publication number: 20170259229
    Abstract: This disclosure features methods of forming chemical compositions. The method includes (1) mixing a plurality of continuous material flows in a mixing tank to form a chemical composition, each continuous material flow including at least one component of the composition; and (2) moving a continuous flow of the chemical composition to a packaging station downstream of the mixing tank. The mixing and moving steps are performed continuously. This disclosure also features systems that can be used to perform such methods.
    Type: Application
    Filed: February 14, 2017
    Publication date: September 14, 2017
    Inventors: Shih-Pin Chou, Wen-Hung Chang, Deepak Mahulikar, Tamas Varga, Abhudaya Mishra
  • Patent number: 9735031
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: August 15, 2017
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Patent number: 9735030
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Grant
    Filed: September 5, 2014
    Date of Patent: August 15, 2017
    Assignee: FUJIFILM PLANAR SOLUTIONS, LLC
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Patent number: 9556371
    Abstract: A method of forming a colloidal dispersion includes providing a first continuous material flow, providing a second continuous material flow, combining the first and second continuous material flows, and moving a continuous flow of a colloidal dispersion in a direction downstream of the first and second continuous flows. The first continuous material flow includes one or more of a diluent (e.g., deionized water), a base, and an acid, and the second continuous material flow includes an abrasive particle solution. The first and second material flows are combined with a Reynolds number greater than about 4400 and less than about 25000 (e.g., about 7400 to about 25000). The colloidal dispersion includes the diluent, the base, the acid, and abrasive particles from the abrasive particle solution.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: January 31, 2017
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Saeed H. Mohseni, Elizabeth K. Gramm, Deepak Mahulikar
  • Publication number: 20160189976
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Application
    Filed: September 17, 2015
    Publication date: June 30, 2016
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Publication number: 20160068710
    Abstract: The present disclosure relates to polishing compositions that can polish Cobalt (Co) films in semiconductor substrates containing a multitude of films including Co, metals, metal oxides and dielectrics. These polishing compositions comprise an abrasive, a weak acid acting as a removal rate enhancer (RRE), a pH adjuster, and an azole-containing corrosion inhibitor (CI). The RRE, pH adjuster and CI have a pKa in the 1-18 range (1 (pKamin)<pKa<18 (pKamax)). The pKa values of the individual components are related to the pH of the polishing composition/slurry (pHslurry) by the following equation: pKamin+6<pHslurry<pKamax?6. The polishing composition also has less than about 100 parts per million (ppm) of sulfate ions and less than about 100 ppm of halide ions, and operates in the 7-12 pH range.
    Type: Application
    Filed: September 5, 2014
    Publication date: March 10, 2016
    Inventors: Luling Wang, Abhudaya Mishra, Deepak Mahulikar, Richard Wen
  • Publication number: 20160053136
    Abstract: The present disclosure provides a method for reducing large particle counts (LPCs) in copper chemical mechanical polishing slurry by way of using high purity removal rate enhancer (RRE) in the slurry. The conductivity of the RRE in deionized water solutions correlates very strongly with the number of LPCs in the RRE, and thus in a slurry using the RRE.
    Type: Application
    Filed: August 19, 2014
    Publication date: February 25, 2016
    Inventors: James McDonough, Laura John, Deepak Mahulikar
  • Patent number: 9190286
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Grant
    Filed: January 16, 2015
    Date of Patent: November 17, 2015
    Assignee: Fujifilm Planar Solutions, LLC
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Publication number: 20150132957
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Application
    Filed: January 16, 2015
    Publication date: May 14, 2015
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Patent number: 8974677
    Abstract: Fluid processing apparatuses and systems are disclosed. In some embodiments the fluid processing apparatuses include a movable enclosure, a plurality of filter housings disposed substantially within the movable enclosure, and a stand disposed within the enclosure. The filter housings are in fluid communication with one another. Each filter housing defines an elongate path and is configured to support a respective filter along the elongate flow path to filter a substantially continuous flow of fluid. The stand supports each filter housing such that the elongate flow path of each filter housing is substantially parallel to a vertical axis, wherein each filter housing is independently rotatable, relative to the stand.
    Type: Grant
    Filed: August 5, 2010
    Date of Patent: March 10, 2015
    Inventors: Saeed H. Mohseni, Deepak Mahulikar
  • Patent number: 8961815
    Abstract: The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
    Type: Grant
    Filed: July 1, 2010
    Date of Patent: February 24, 2015
    Assignee: Planar Solutions, LLC
    Inventors: Bin Hu, Abhiskek Singh, Gert Moyaerts, Deepak Mahulikar, Richard Wen
  • Publication number: 20140238441
    Abstract: A system for removing particles or deposits from a surface having particles or deposits thereon, the system comprising at least one vessel, at least one enclosure containing a surface having particles or deposits thereon, one or more pumps, and one or more valves; the at least one vessel suitable for holding a chemical composition; wherein the at least one vessel is in fluid communication with the at least one enclosure, and the at least one enclosure is in fluid communication with the at least one vessel, to form at least a primary chemical composition circulation loop.
    Type: Application
    Filed: May 13, 2014
    Publication date: August 28, 2014
    Applicant: Fujifilm Planar Solutions, LLC
    Inventors: Saeed Mohseni, Deepak Mahulikar, Elizabeth Gramm