Abstract: A front-side conductive paste for a crystalline silicon solar cell chip is provided. The front-side conductive paste for a crystalline silicon solar cell chip includes, in parts by weight, 80.0-93.0 parts of a metal powder, 6.0-15.0 parts of an organic carrier, and 1.0-5.0 parts of an oxide etching agent. The oxide etching agent contains at least 10-40% of MgO, 0.1-5% of PbO, and 5-30% of Li2O based on 100% by mole, with the molar ratio of MgO:PbO being 10:5˜40:0.1, and the mole ratio of MgO:Li2O being 10:30˜40:5. The metal powder forms good ohmic contact with crystalline silicon substrate during the sintering process of the front-side conductive paste applied overlying an insulation film on the substrate. Finally, a front-side electrode of low contact resistance, good electrical conductivity, and strong adhesion is obtained.

Abstract: Systems and methods of data processing are provided. The method comprises receiving an input data to be processed by a series of operations, identifying a first operation from the series of operations, selecting at least one second operation from the series of operations to be grouped with the first operation based at least in part on an amount of an input data and an output data of the grouped operations and the capacity of the memory unit, and processing a portion of the input data of the grouped operations. An efficiency of the series of data operation can be improved by ensuring the input data and output data of any data operation are both stored in the memory unit.

Abstract: A method and apparatus are disclosed to perform the circular addressing to emulate a virtually unlimited memory space despite the fixed capacity of a physical memory by readdressing the portion of the data that exceeds the pre-defined length of the circular addressing region to another pre-defined address in the circular addressing region. Data segments in a data sample can be loaded and computed with recalculated circular addresses for different applications.

Abstract: Disclosed is a method for convolution calculation in a neural network, comprising: reading an input feature map, depthwise convolution kernels and pointwise convolution kernels from a dynamitic random access memory (DRAM); performing depthwise convolution calculations and pointwise convolution calculations according to the input feature map, the depthwise convolution kernels and the pointwise convolution kernels to obtain output feature values of a first predetermined number p of points on all pointwise convolution output channels; storing the output feature values of a first predetermined number p of points on all pointwise convolution output channels into an on-chip memory, wherein the first predetermined number p is determined according to at least one of available space in the on-chip memory, a number of the depthwise convolution calculation units, and width, height and channel dimensions of the input feature map; and repeating the above operation obtain output feature values of all points on all pointwis

Abstract: Disclosed is a method for convolution calculation in a neural network, comprising: reading an input feature map, depthwise convolution kernels and pointwise convolution kernels from a dynamic random access memory (DRAM); performing depthwise convolution calculations and pointwise convolution calculations by depthwise convolution calculation units and pointwise convolution calculation units, according to the input feature map, the depthwise convolution kernels and the pointwise convolution kernels to obtain output feature values of a first predetermined number p of points on all pointwise convolution output channels; storing the output feature values of a first predetermined number p of points on all pointwise convolution output channels into an on-chip memory; and repeating above operation to obtain output feature values of all points on all point wise convolution output channels. Therefore, the storage space for storing intermediate results may be reduced.

Abstract: Disclosed are a method and an apparatus for performing an operation of a convolutional layer in a convolutional neural network. The method includes reading unfolded-feature-data and an original convolution kernel from DRAM, padding the unfolded-feature-data, folding the padded unfolded-feature-data in at least one dimension folded feature data, storing the folded feature data into a SRAM, folding the original convolution kernel in the at least one dimension to generate one or more folded convolution kernels, storing the one or more folded convolution kernels in the SRAM and reading the folded feature data and the one or more folded convolution kernels from the SRAM into a calculation circuit for performing a convolution operation on the folded feature data by using the one or more folded convolution kernels.

Abstract: Disclosed are a method and an apparatus for performing an operation of a convolutional layer in a convolutional neural network.

Abstract: Disclosed are a method and an apparatus for performing convolution operation on folded feature data. The method comprises; reading the folded feature data provided to a convolution layer and an original convolution kernel from a dynamic random access memory (DRAM); pre-processing the folded feature data and the original convolution kernel; storing the pre-processed folded feature data into a static random-access memory (SRAM); folding the pre-processed original convolution kernel in at least one dimension of width or height according to a folding manner of the folded feature data to generate one or more folded convolution kernels corresponding to the original convolution kernel; storing the one or more folded convolution kernels in the SRAM; and reading the pre-processed folded feature data and the one or more folded convolution kernels from the SRAM into a calculation unit for convolving the pre-processed folded feature data with the one or more folded convolution kernels.

Abstract: A method and an apparatus for adapting feature data in a convolutional neural network. The method includes selecting a plurality of consecutive layers; determining an expected number of subdata blocks and a layout position, width and height of each subdata block in an output feature data of a last layer; determining, for each current layer, a layout position, width, and height of each subdata block of an input feature data for the current layer according to the layout position, width, and height of each subdata block of the output feature data for the current layer; determining an actual position of each subdata block of the input feature data for a first layer in the input feature data for the first layer; and obtaining the expected number of subdata blocks of the input feature data for the first layer according to the actual position, width and height of each subdata block of the input feature data for the first layer.

Abstract: A method and apparatus for performing operations in a convolutional neural network. A method for performing operations in a convolutional neural network may include splitting a weight parameter of a selected layer in the convolutional neural network to obtain an operational parameter array including a plurality of operational parameters, performing operations in the selected layer by using each operational parameter in the operational parameter array to obtain a partial operational result array including a plurality of partial operational results, and generating one or more output data of the selected layer based on the partial operational result array. By this method, the convolutional neural network may achieve an improved execution efficiency.

Abstract: Disclosed are a method and an apparatus for adapting parameters of a neural network. The method includes selecting one or more dimensions for a weight parameter of each of at least one layer of the neural network, determining a dimension value and a corresponding target value in each dimension of the weight parameter, and padding the weight parameter in a case where the dimension value in at least one dimension of the weight parameter is less than the corresponding target value, the dimension value in each dimension of the weight parameter after the padding being equal to the corresponding target value.

Abstract: The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive paste composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb—Te based crystalline compounds having a fixed melting temperature in a range of 440° C. to 760° C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

Abstract: The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive paste composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb—Te based crystalline compounds having a fixed melting temperature in a range of 440° C. to 760° C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

Abstract: The present invention provides an electrically conductive paste for a front electrode of a solar cell and a preparation method thereof. The electrically conductive paste is composed of a glass-free corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more Pb—Te based crystalline compounds having a fixed melting temperature in a range of 440° C. to 760° C. During a sintering process of the electrically conductive paste for forming an electrode, the glass-free corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

Abstract: The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.

Abstract: The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.

Abstract: The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a Pb-free glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of preparing Pb—Te—O-based crystallized corrosion binder characterized by melting temperatures in a range of 440° C. to 760° C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface.

Abstract: The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a Pb-free glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of preparing Pb—Te—O-based crystallized corrosion binder characterized by melting temperatures in a range of 440° C. to 760° C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface.

Abstract: The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of prepare Pb—Te—O-based crystal corrosion binder characterized by melting temperatures in a range of 440° C. to 760° C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface.

Abstract: A sputtering target device is provided for manufacturing solar cells. The target device includes a metal selected from a group consisting of copper, indium, and molybdenum and further includes antimony or antimony-containing compound mixed in a matrix of the metal. The target device comprises antimony of 0.1 to 20 wt % and the metal of at least 80 wt %. The target device is installed in a deposition system for forming a back electrode doped with antimony or for forming at least one precursor layer doped with antimony among a stack of multiple precursor layers for forming a semiconductor photovoltaic absorber material.