Abstract: The present invention provides an electrically conductive paste for a front electrode of a solar cell and a preparation method thereof. The electrically conductive paste is composed of a corrosion binder, a metallic powder and an organic carrier. The corrosion binder is one or more glass-free Pb—Te based crystalline compounds having a fixed melting temperature in a range of 440° C. to 760° C. During a sintering process of the electrically conductive paste for forming an electrode, the corrosion binder is converted into a liquid for easily corroding and penetrating an antireflective insulating layer on a front side of the solar cell, so that a good ohmic contact is formed. At the same time, the electrically conductive metallic powder is wetted, and the combination of the metallic powder is promoted. As a result, a high-conductivity front electrode of a crystalline silicon solar cell is formed.

Abstract: The present invention provides a conductive paste characterized by a crystal-based corrosion binder being combined with a glass frit and mixed with a metallic powder and an organic carrier. Methods for preparing each components of the conductive paste are disclosed including several embodiments of prepare Pb—Te—O-based crystal corrosion binder characterized by melting temperatures in a range of 440° C. to 760° C. and substantially free of any glass softening transition upon increasing temperature. Method for preparing the conductive paste includes mixture of the components and a grinding process to ensure all particle sizes in a range of 0.1 to 5.0 microns. Method of applying the conductive paste for the formation of a front electrode of a semiconductor device is presented to illustrate the effectiveness of the crystal-based corrosion binder in transforming the conductive paste to a metallic electrode with good ohmic contact with semiconductor surface.

Abstract: The present invention provides an apparatus and a method for manufacturing a CIGS absorber of a thin film solar cell. The apparatus includes a supply chamber configured to provide a flexible substrate coated with precursors. The apparatus further includes a reaction chamber coupled to the supply chamber for at least subjecting the precursors on the flexible substrate to a reactive gas at a first state to form an absorber material. Additionally, the apparatus includes a gas-balancing chamber filled with the reactive gas at a second state. The gas-balancing chamber is communicated with the reaction chamber for automatically updating the first state of the reactive gas to the second state. Moreover, the apparatus includes a control system to maintain the second state of the reactive gas in the gas-balancing chamber at a preset condition and to adjust the transportation of the flexible substrate through the reaction chamber.

Abstract: The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll apparatus. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS)2 by sequentially electroplating a stack of multiple precursor layers comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450° C. and 700° C.

Abstract: The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll apparatus. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS)2 by sequentially electroplating a stack of multiple precursor layers comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450° C. and 700° C.

Abstract: A method for fabricating a thin-film solar cell. The method includes rolling a flexible substrate prepared with a metalized surface out of a roll to move linearly with a speed. The method further includes forming a back-electrode film overlying the metalized surface moving with the speed. Additionally, the method includes forming a stack of films comprising at least copper, gallium, and indium overlying the back-electrode film and forming a Se-alloy layer overlying the stack of films. Furthermore, the method includes depositing a Se—Na bearing film overlying the Se-alloy layer from a vacuum evaporator having at least two sources. Moreover, the method includes performing a thickness measurement in real time for the back-electrode film, the stack of films, and the Se-alloy layer on the flexible substrate moving with the speed to control the Se-alloy layer in a thickness of 10-100 nm corresponding to the Se—Na film in a thickness of 1-3 microns.

Abstract: A nodular graphite, heat-resistant cast iron composition for use in engine systems. The composition contains carbon 1.5-2.4 weight %, silicon 5.4-7.0 weight %, manganese 0.5-1.5 weight %, nickel 22.0-28.0 weight %, chromium 1.5-3.0 weight %, molybdenum 0.1-1.0 weight %, magnesium 0.03-0.1 weight %, and a balance weight % being substantially iron. The composition has an austenitic matrix. Additionally, the composition exhibits excellent oxidation resistance at high temperature and excellent mechanical properties at both room and high temperatures. Thus, the composition can be a lower cost substitute material for Ni-Resist D5S under thermocycling conditions experienced by exhaust gas accessories and housings such as engine exhaust manifolds, turbocharger housings, and catalytic converter housings.

Abstract: A nodular graphite, heat-resistant cast iron composition for use in engine systems. The composition contains carbon 1.5-2.4 weight %, silicon 5.4-7.0 weight %, manganese 0.5-1.5 weight %, nickel 22.0-28.0 weight %, chromium 1.5-3.0 weight %, molybdenum 0.1-1.0 weight %, magnesium 0.03-0.1 weight %, and a balance weight % being substantially iron. The composition has an austenitic matrix. Additionally, the composition exhibits excellent oxidation resistance at high temperature and excellent mechanical properties at both room and high temperatures. Thus, the composition can be a lower cost substitute material for Ni-Resist D5S under thermocycling conditions experienced by exhaust gas accessories and housings such as engine exhaust manifolds, turbocharger housings, and catalytic converter housings.

Abstract: An electrical component includes a substrate, a first integrated circuit attached to the substrate, a metal portion coupled to the first integrated circuit, and a second integrated circuit attached to the first integrated circuit. The metal portion is sandwiched between the first integrated circuit and the second integrated circuit.

Abstract: The present invention relates to CIGS solar cell fabrication. The invention discloses a method for fabricating CIGS thin film solar cells using a roll-to-roll system. The invention discloses method to fabricate semiconductor thin film Cu(InGa)(SeS)2 by sequentially electroplating a stack comprising of copper, indium, gallium, and selenium elements or their alloys followed by selenization at a temperature between 450 C and 700 C.

Abstract: A solar cell has a first surface and the second surface areas. The first surface is a semi-cylindrical area or modified semi-cylindrical area. The first surface is a flattened area. Sunlight strikes the semi-cylindrical area of the solar cell surface with a maximum incident angle from sunrise to sunset. A mirror may be attached on the top surface of the solar cell to further improve the efficiency.

Abstract: A nodular, compacted graphite or other hybrid or duplex graphite morphology cast high silicon iron is disclosed which contains up to 1.5% tungsten, up to 0.8% vanadium, and up to 1.2% niobium; and at least 60.0% iron, all percentages are based on the total weight of the composition. This cast iron exhibits high strength and good ductility over a wide temperature range compared to the conventional SiMo ductile iron. The compositions may further contain, up to 1.5% molybdenum and up to 1.0% chromium to offer improvements in material strength. The compositions may include 0.2 to 0.5% by weight aluminum and up to 1.2% chromium for further oxidation resistance and 0.5 to 5.0% nickel for corrosion resistance.

Abstract: An electrical component includes a substrate, a first integrated circuit attached to the substrate, a metal portion coupled to the first integrated circuit, and a second integrated circuit attached to the first integrated circuit. The metal portion is sandwiched between the first integrated circuit and the second integrated circuit.

Abstract: An electrical component includes a substrate, a first integrated circuit attached to the substrate, a metal portion coupled to the first integrated circuit, and a second integrated circuit attached to the first integrated circuit. The metal portion is sandwiched between the first integrated circuit and the second integrated circuit.

Abstract: A method of manufacturing a plurality of semiconductor chip packages and the resulting chip package assemblies. The method includes providing a circuitized substrate having terminals and leads. A first microelectronic element is arranged with the substrate and contacts on the microelectronic element are connected to the substrate. A conductive member is placed on top of the first microelectronic element and is used to support a second microelectronic element. The second microelectronic element is arranged with the conductive member in a top and bottom position. The second microelectronic element is then also connected by leads from contacts on the second microelectronic element to pads and terminals on the circuitized substrate. The conductive member is then connected to a third pad or set of pads on the substrate. An encapsulant material may be deposited so as to encapsulate the leads and at least one surface of the microelectronic elements.

Abstract: A microelectronic assembly includes a first microelectronic element having a first face and contacts accessible at the first face, and a layer of a dielectric material having a bottom surface contacting the first microelectronic element, a top surface facing away from the first microelectronic element and holes extending between the top and bottom faces in alignment with the contacts on the first microelectronic element. The assembly includes conductive protrusions extending through the holes to the contacts, the conductive protrusions projecting beyond the top surface of the dielectric layer.

Abstract: A method for forming connections within a multi-layer electronic circuit board 10 which allows for the selective, efficient, and reliable interconnection between at least one conductive layer and a ground plane or layer.

Abstract: A method is disclosed for making a microelectronic package. A material is applied to a first major surface of a microelectronic element to reduce the heights of protrusions projecting from the first major surface. The microelectronic element is assembled to a microelectronic component. A method of forming protrusions and an assembly incorporating the microelectronic element having protrusions is also disclosed.

Abstract: An electrical component includes a substrate, a first integrated circuit attached to the substrate, a metal portion coupled to the first integrated circuit, and a second integrated circuit attached to the first integrated circuit. The metal portion is sandwiched between the first integrated circuit and the second integrated circuit.

Abstract: A method 10 for making a multi-layer electronic circuit board 110 having electroplated apertures 18, 20 which may be selectively and electrically isolated from electrically grounded member 12 and further having selectively formed air bridges and/or crossover members 50 which are structurally supported by material 54, and further having certain exposed connection surfaces 112, selectively and electrically connected to certain electrically conductive members 34, 42, and 44.