RADIATION SYSTEM AND LITHOGRAPHIC APPARATUS
A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.
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This application is the U.S. National Phase of PCT/NL2007/050598, filed Nov. 27, 2007, which claims benefit and priority to U.S. application Ser. No. 11/637,936, filed on Dec. 13, 2006. Both priority applications are hereby incorporated in their entirety by reference.
FIELDThe present invention relates to a radiation system and a lithographic apparatus that includes a radiation system.
BACKGROUNDA lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. A lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that instance, a patterning device, which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC. This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist) provided on the substrate. In general, a single substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the “scanning” direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning device to the substrate by imprinting the pattern onto the substrate.
In addition to EUV radiation, radiation sources used in EUV lithography generate contaminant material that may be harmful for the optics and the working environment in which the lithographic process is carried out. Such is especially the case for EUV sources operating via a plasma produced discharge source, such as a plasma tin source. Such a source typically comprises a pair of electrodes to which a voltage difference can be applied. In addition, a vapor is produced, for example, by a laser beam that is targeted to, for example, one of the electrodes. Accordingly, a discharge will occur between the electrodes, generating a plasma, and which causes a so-called pinch in which EUV radiation is produced. In addition to this radiation, the discharge source typically produces debris particles, among which can be all kinds of microparticles varying in size from atomic to complex particles, which can be both charged and uncharged. It is desired to limit the contamination of the optical system that is arranged to condition the beams of radiation coming from an EUV source from this debris. Conventional shielding of the optical system primarily includes a system comprising a high number of closely packet foils aligned parallel to the direction of the light generated by the EUV source. A so-called foil trap, for instance, as disclosed in EP1491963, uses a high number of closely packed foils aligned generally parallel to the direction of the light generated by the EUV source. Contaminant debris, such as micro-particles, nano-particles and ions can be trapped in walls provided by the foil plates. Thus, the foil trap functions as a contamination barrier trapping contaminant material from the source. Due to the arrangement of the platelets, the foil trap is transparent for light, but will capture debris either because it is not travelling parallel to the platelets, or because of a randomized motion caused by a buffer gas. It is desirable to improve the shielding of the radiation system, because some (directed, ballistic) particles may still transmit through the foil trap.
SUMMARYAccording to an aspect of the invention there is provided a radiation system for generating a beam of radiation that defines an optical axis. The radiation system includes a plasma produced discharge source constructed and arranged to generate EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system constructed and arranged to produce a discharge between the pair of electrodes so as to provide a pinch plasma between the electrodes. The radiation system also includes a debris catching shield constructed and arranged to catch debris from the electrodes, to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.
According to an aspect of the invention, there is provided a lithographic apparatus that includes a radiation system for generating a beam of radiation that defines an optical axis. The radiation system includes a plasma produced discharge source constructed and arranged to generate EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system constructed and arranged to produce a discharge between the pair of electrodes so as to provide a pinch plasma between the electrodes. The radiation system also includes a debris catching shield constructed and arranged to catch debris from the electrodes, to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight. The lithographic apparatus also includes a patterning device constructed and arranged to pattern the beam of radiation, and a projection system constructed and arranged to project the patterned beam of radiation onto a substrate.
Other aspects, features, and advantages of the present invention will become apparent from the following detailed description, the accompanying drawings, and the appended claims.
Embodiments of the invention will now be described, by way of example only, with reference to the accompanying schematic drawings in which corresponding reference symbols indicate corresponding parts, and in which:
The illumination and projection systems may include various types of optical components, such as refractive, reflective, diffractive or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
The support structure supports, i.e. bears the weight of, the patterning device. It holds the patterning device in a manner that depends on the orientation of the patterning device, the design of the lithographic apparatus, and other conditions, such as for example whether or not the patterning device is held in a vacuum environment. The support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning device. The support structure may be a frame or a table, for example, which may be fixed or movable as required. The support structure may ensure that the patterning device is at a desired position, for example with respect to the projection system. Any use of the terms “reticle” or “mask” herein may be considered synonymous with the more general term “patterning device.”
The term “patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross-section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
The patterning device may be transmissive or reflective. Examples of patterning devices include masks, programmable mirror arrays, and programmable LCD panels. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, or any combination thereof, as appropriate for the exposure radiation being used. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
As here depicted, the apparatus is of a reflective type (e.g. employing a reflective mask). Alternatively, the apparatus may be of a transmissive type (e.g. employing a transmissive mask).
The lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more mask tables). In such “multiple stage” machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
Referring to
The illuminator IL may comprise an adjuster for adjusting the angular intensity distribution of the radiation beam. Generally, at least the outer and/or inner radial extent (commonly referred to as σ-outer and σ-inner, respectively) of the intensity distribution in a pupil plane of the illuminator can be adjusted. In addition, the illuminator IL may comprise various other components, such as an integrator and a condenser. The illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
The radiation beam B is incident on the patterning device (e.g., mask MA), which is held on the support structure (e.g., mask table MT), and is patterned by the patterning device. Having traversed the mask MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W. With the aid of the second positioner PW and position sensor IF2 (e.g. an interferometric device, linear encoder or capacitive sensor), the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B. Similarly, the first positioner PM and another position sensor IF1 can be used to accurately position the mask MA with respect to the path of the radiation beam B, e.g. after mechanical retrieval from a mask library, or during a scan. In general, movement of the mask table MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner PM. Similarly, movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner PW. In the case of a stepper (as opposed to a scanner) the mask table MT may be connected to a short-stroke actuator only, or may be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2. Although the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks). Similarly, in situations in which more than one die is provided on the mask MA, the mask alignment marks may be located between the dies.
The depicted apparatus could be used in at least one of the following modes:
1. In step mode, the mask table MT and the substrate table WT are kept essentially stationary, while an entire pattern imparted to the radiation beam is projected onto a target portion C at one time (i.e. a single static exposure). The substrate table WT is then shifted in the X and/or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure field limits the size of the target portion C imaged in a single static exposure.
2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously while a pattern imparted to the radiation beam is projected onto a target portion C (i.e. a single dynamic exposure). The velocity and direction of the substrate table WT relative to the mask table MT may be determined by the (de-)magnification and image reversal characteristics of the projection system PS. In scan mode, the maximum size of the exposure field limits the width (in the non-scanning direction) of the target portion in a single dynamic exposure, whereas the length of the scanning motion determines the height (in the scanning direction) of the target portion.
3. In another mode, the mask table MT is kept essentially stationary holding a programmable patterning device, and the substrate table WT is moved or scanned while a pattern imparted to the radiation beam is projected onto a target portion C. In this mode, generally a pulsed radiation source is employed and the programmable patterning device is updated as required after each movement of the substrate table WT or in between successive radiation pulses during a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array of a type as referred to above.
Combinations and/or variations on the above described modes of use or entirely different modes of use may also be employed.
In
The shielding effect can be further optimized by placing the shields 11 close enough, preferably, a distance ranging between 0.5 and 25 mm to any of the electrodes, to shield a maximum spherical angle of the debris producing zone 9.
To minimize a distance with the electrodes, the heat load will be so high on the shield 11 that it is preferably provided as a fluid jet 13, for example, of molten Tin. Such a jet could have a length of about 75 mm and a thickness of several mm, for example ranging from 0.5 to 3 mm. It is noted that fluid jets are per se known from US 2006-0011864 which discloses electrodes in a plasma discharge source in the form of fluid jets, however, there is not disclosed a shield or at least one fluid jet provided near an electrode of a pair of electrodes. Accordingly, preferably, the debris catching shield 11 is provided, as illustrated, by a pair of fluid jets 13, arranged oppositely and generally parallel to a longitudinal axis of the electrodes 5. It may however, in certain embodiments, possible to direct the plasma production substantially towards one of the electrodes 5, which one electrode will accordingly be a major contributor in producing debris 8. Such debris may vary in size and travel speed. For instance, one can have micro-particles: these are micron-sized particles with relatively low velocities. In addition, there may be produced nano-particles, which are nanometer-sized particles with typically quite high velocities; atomic debris, which are individual atoms that act as gaseous particles; and ions, which are ionised high-velocity atoms.
It is noted that in one embodiment, the fluid jet 13 may be provided near an electrode of the pair of electrodes without substantially being configured to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis and to provide an aperture to a central area 10 between the electrodes in the line of sight (unlike the embodiment shown in
The advantage of the fluid jets is that the obstruction is continuously replaced and can thus withstand very high heat loads. However, in other embodiments, it may be possible, to provide a shield 11 that is positioned at generally the same distance nearby the electrodes 5 as discussed hereabove with reference to
In particular, especially for plasma produced discharge sources 4 operated with Tin plasma, a suitable material for the fluid jets may also be Tin or a compound comprising Tin, such as for example Ga—In—Sn, which may be suitable to have a lower melting point and easier handling properties. Furthermore, although
Under certain circumstances, fluid jets may not be stable—i.e. they may spontaneously divide into droplets with a diameter approximately equal to the jet diameter. This means that it may only be possible to create continuous jets if the diameter is relatively large (>˜0.5 mm). Therefore, it may be advantageous to use jets that intentionally consist of closely spaced droplets that can have a very small and controllable size, with a controllable distance between droplets. The ability to create such stable droplet chains (40 μm diameter with about 40 μm distance) was presented in the EUVL Sematech conference in Barcelona (Conference 7870, 17 Oct. 2006) by David Brandt (session 3-SO-04) for use as a laser target in a LPP EUV source.
The stability of the droplet chains means that different configurations may be employed, depending upon which functional aspects (recombination and/or debris catching) need to be optimized.
In addition to the thermal cleaning techniques illustrated with reference to the
In addition to the above-discussed cleaning technique, the radiation system may comprise an excitator 17 (see
Also, the foil could be externally excitated (longitudinal waves) so a flow of tin in a predefined direction may be present. Also (directional) accelerations/vibrations can be used to give excitation profile(s) (pending between stick/slip effect of the droplets) to the entire module instead of each separate foil.
In
The principle of operation in
By applying a magnetic field of the type as indicated (with a conventional arrow indication), such debris particles 8 are deflected towards the optical axis 3. For example, the particle with trajectory 23 may be deflected to follow the solid line 24 and no longer be transmitted through the foil trap 15. This is because on entrance of the foil trap, the particle appears to originate from a point outside the acceptance width 10 as indicated by the other dashed line 25. In other words, the application of the magnetic field effectively narrows down an effective acceptance width of the shield, which width defines a zone from where debris particles could enter the system unhindered. Accordingly, for a given dimensioning of the acceptance width, the optical transmission may be improved by reducing the number of platelets 11 and applying a magnetic field.
A typical distance for the acceptance width of the foil trap in the absence of a magnetic field may be ranging from about 0.5 to about 2 mm, preferably about 1 mm. For typical foil trap dimensions (inner radius 30 mm, relative to a central zone 10, outer radius 139 mm), this leads to a foil trap with 137 foils having an optical transmission of approximately 63%. As the Figure shows, in a preferred embodiment, the distance d, d′ between the platelets 14 may vary, wherein typically a distance d towards the optical axis 3 may increase relative to distances d′ away from the optical axis 3.
In the presence of a magnetic field B, a particle with charge q and velocity v experiences a Lorentz force given by
F=qv×B (1)
Consequently, if the direction of the magnetic field is perpendicular to the velocity, the particle follows a circular trajectory with radius R equal to
In the present embodiment, the angular deflection α due to the magnetic field depends on the distance over which the field is applied, which is approximately equal to the inner radius of the foil trap r0. The deflection angle is given by sin α=r0/R as shown in
d=r0 sin α−R(1−cos α) (3)
which for small values of α reduces to
By substituting Eq. (2), the following expression relating the displacement d to the characteristic parameters q, m and v of the debris particles is obtained:
Using permanent magnets or electromagnets, a magnetic field of the order of 1 T can fairly easily be achieved. When a magnetic field is applied so that the displacement d is equal to 0.5 mm for a certain type of debris, the acceptance width for that debris accordingly effectively decreases by a factor of 2 compared to the earlier mentioned value of 1 mm acceptance width. One can therefore construct a foil trap that has an acceptance width of 2 mm and still obtain the same extent of debris mitigation. Such a foil trap may have only 69 foils and an optical transmission of 70%. Thus, the optical transmission is significantly improved by applying a magnetic field.
The debris catching shield of the radiation system 1 in
In a preferred embodiment, the platelets, also called foils, have concentric conical surfaces aligned with respect to the discharge axis 40, with their apex at the central area along the discharge axis. In another embodiment, the foils can be composed of a multiple number of planar sections, the foil being aligned with respect to the discharge axis. For example, each foil may have, in cross-sections thereof, a hexagonal or octagonal shape.
In addition to, or alternatively, the traverses may be used as a buffer gas to provide a buffer gas zone within a zone in side the platelets, in order to be able to further trap, for example, neutral nanoparticles which may diffuse through the platelets 14 and may cause contamination of the optical system provided downstream (not shown).
Alternatively, it is possible to remove debris from the capture shield using evaporation.
Advantageously, a lithium plasma source is used since lithium has a significantly higher vapor pressure than tin (about 9 orders of magnitude) and as a consequence also a significantly higher removal rate (removal rate of 0.4 nm/hr requires temperature of only 550 K (277 C). This allows applying evaporative cleaning of lithium-contaminated surfaces at significantly lower temperatures than evaporative cleaning of tin-contaminated surfaces; evaporative cleaning of collector shells contaminated with lithium is feasible.
In
In
By moving the wiping module 60 along a moving path of a wiping element 61 with respect to a platelet surface 62 contamination particles, such as Sn contamination, is swept and/or pushed away from the platelet surface 62. As the spacings between platelets of the debris catching shield, also called foil trap, can be small, contamination particles might quickly fill said intermediate spacings, thereby strongly reducing a transmittance of the foil trap. This is especially the case with foil traps that are directly exposed to micro particle debris emitted by an EUV source, such as described referring to
As the wiping elements 61 are substantially parallel oriented, similarly oriented platelet surfaces can be cleaned. Further, instead of using a single frame for supporting the wiping elements, multiple supporting elements can be used for supporting the wiping elements. It is also possible to mutually interconnect ends of the finger-like wiping elements, thereby obtaining a plate-like structure having slots for receiving the platelets.
It is noted in this context that during use of the wiping module, the wiping elements move with respect to the platelet surfaces, meaning that the wiping elements move, or the platelets, or both such that a net relative movement results. Along a moving path of the wiping elements with respect to the platelet surfaces, the intermediate spacing distance between two opposite platelet surfaces remains substantially constant, thereby maintaining an efficient wiping operation. In an alternative embodiment, the distance between the opposite platelet surfaces along said path varies, e.g. for providing locally a low sweep resistance for the movement of the wiping elements.
The wiping elements 61 are arranged for performing a translation and/or swiveling movement with respect to the respective platelet surfaces 62. In the embodiment shown in
Viewed from the discharge 7 between the electrodes of the source, the platelets 62 extend substantially between a fixed radial inner distance and a fixed radial outer distance, see e.g.
Depending on an accumulation rate of contamination particles, e.g. Sn, the wiping module 60 can be moved along the platelet surfaces of the foil trap at a specific time interval, e.g. once every 5 minutes. This can be done online during operation of the source. However, a significant amount of radiation can be blocked during a wiping action and it may be necessary to compensate this loss of illumination with a longer illumination time, e.g. using a feedback system with a dose sensor. In a non-operational state of the wiping module 60, in a stationary position, the wiping module is preferably placed outside a collection angle of the source, in order to counteract any radiation blocking. As an example, the wiping module can in the non-operational state be placed in an uppermost or lower position. Alternatively, the wiping module may be placed on the optical axis, the position as shown in
In an embodiment according to an aspect of the invention, the wiping module further comprises one or more wipers 64 that are positioned to clean the wiping elements 61 from contamination particles that are collected during a wiping movement. Preferably, the wiping module also comprises a collection base 65 to collect the contamination particles that are removed from the wiping elements. As shown in
According to a further aspect of the invention, the surface of the wiping elements is treated for enhancing its wetting properties, e.g. by reduction of oxides or by applying a coating.
It is noted that the described wiping module variants can also be applied in combination with other debris catching shield types. As an example, such a wiping module can be applied in combination with a debris catching shield that extends circumferentially around the discharge axis over at least 180°, preferably over at least 270°, optionally over 360°. In such an embodiment, the debris catching shield can be rotated with respect to the discharge axis, thereby performing a cleaning action by means of a stationary wiping module. Therefore, according to an aspect of the invention, a radiation system is provided for generating a beam of radiation in a radiation space, the radiation system comprising a plasma produced discharge source constructed and arranged to generate extreme ultraviolet radiation, the discharge source comprising a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system constructed and arranged to produce a discharge between said pair of electrodes so as to provide a pinch plasma between said electrodes, a debris catching shield comprising platelets constructed and arranged to catch debris from said electrodes, and a wiping module provided with a multiple number of substantially parallel oriented wiping elements movable along respective surfaces of said platelets. In a preferred embodiment according to an aspect of the invention, the intermediate distance between platelet surfaces is substantially invariant along a moving path of a wiping element with respect to a platelet surface to be cleaned.
In addition, it is noted that a collector configuration substantially surrounding a plasma produced discharge source can not only be applied in combination with a radiation system according to the invention having a debris catching shield constructed and arranged to catch debris from electrodes of a plasma source, to shield said electrodes from a line of sight provided in the radiation space, and to provide an aperture to a central area between said electrodes in said line of sight, but also in combination with other radiation systems, e.g. provided with a rotating foil trap configuration. Therefore, according to an aspect of the invention, a radiation system is provided for generating a beam of radiation in a radiation space, the radiation system comprising a plasma produced discharge source constructed and arranged to generate extreme ultraviolet radiation, the discharge source comprising a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system constructed and arranged to produce a discharge between said pair of electrodes so as to provide a pinch plasma between said electrodes, and a collector configuration for modifying a generated beam of radiation, wherein the collector configuration substantially surrounds the plasma produced discharge source in a circumferential direction around discharge axis interconnecting said electrodes. In a preferred embodiment according to the invention, the collector configuration extends circumferentially around the discharge axis over at least 180°, preferably over at least 270°, optionally over 360°. In a further preferred embodiment according to the invention, the collector configuration is substantially rotationally symmetric with respect to the discharge axis between the electrodes.
Ω=4π−4π(1−cos α)=4π cos α=4π sin θ (6)
where θ is the opening semi-angle of the foil trap. For example, a foil trap with θ=45° covers 71% of the total solid angle of 4π.
The amount of power that is actually transmitted through the debris catching shield can be calculated by integrating the transmittance of the debris catching shield over the covered solid angle. The transmittance of the debris catching shield increases with 0 due to the increasingly dense spacing between the foils.
Although specific reference may be made in this text to the use of lithographic apparatus in the manufacture of ICs, it should be understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories, flat-panel displays, liquid-crystal displays (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the context of such alternative applications, any use of the terms “wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively. The substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
The term “lens”, where the context allows, may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
The descriptions above are intended to be illustrative, not limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.
Claims
1. A radiation system for generating a beam of radiation in a radiation space, the radiation system comprising:
- a plasma produced discharge source constructed and arranged to generate extreme ultraviolet radiation, the discharge source comprising a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system constructed and arranged to produce a discharge between said pair of electrodes so as to provide a pinch plasma between said electrodes; and
- a debris catching shield constructed and arranged to catch debris from said electrodes, to shield said electrodes from a line of sight provided in the radiation space, and to provide an aperture to a central area between said electrodes in said line of sight.
2. (canceled)
3. A radiation system according to claim 1, wherein the debris catching shield comprises at least one fluid jet.
4. A radiation system according to claim 3, wherein the fluid jet comprises molten tin or a tin compound.
5. (canceled)
6. A radiation system according to claim 1, wherein the debris catching shield is provided by a pair of fluid jets, arranged oppositely and generally parallel to a longitudinal axis of the electrodes.
7. A radiation system according to claim 3, wherein the debris catching shield comprises a plurality of fluid jets, arranged in radial direction relative from the central area.
8. (canceled)
9. (canceled)
10. (canceled)
11. (canceled)
12. A radiation system according to claim 1, wherein the debris catching shield comprises a static configuration of generally radially oriented platelets, relative to said central area, wherein the platelets are oriented to shield the electrodes from a line of sight provided between said platelets.
13. A radiation system according to claim 12, wherein a distance between the platelets is increased relative to distances away from the optical axis.
14. (canceled)
15. A radiation system according to claim 12, further comprising an electromagnetic deflecting field unit disposed for applying an electromagnetic deflecting field between the electrodes and the shield.
16. A radiation system according to claim 15, wherein said electromagnetic deflecting field unit provides a static magnetic field.
17. (canceled)
18. (canceled)
19. A radiation system according to claim 12, further comprising a hydrogen radical supply system for guiding hydrogen radicals through said platelets.
20. (canceled)
21. (canceled)
22. (canceled)
23. A radiation system according to claim 12 wherein at least some of the platelets are provided by a fluid jet.
24. A radiation system according to claim 23, wherein the fluid jet comprises molten tin or a tin compound.
25. (canceled)
26. A radiation system according to claim 1, further comprising a heating system that can be selectively heated for elevating a temperature of said debris catching shield to a temperature for evaporating said debris from said debris catching shield; and a gas supply system for providing a gas flow to evacuate said evaporated debris from said debris catching shield.
27. (canceled)
28. (canceled)
29. (canceled)
30. A radiation system according to claim 12, wherein the platelets are provided as a material of porous characteristics for removing said debris from said platelets through capillary action.
31. A radiation system according to claim 12, further comprising an excitator for removing said debris from said platelets through mechanical excitation of said platelets.
32. (canceled)
33. (canceled)
34. (canceled)
35. A radiation system according to claim 1, wherein the system that is constructed and arranged to produce a discharge between said pair of electrodes comprises a laser.
36. A radiation system according to claim 1, wherein the electrodes define a discharge axis interconnecting said electrodes and wherein the radiation space is substantially bounded between two mutually reversely oriented cones relative to the discharge axis, the cones having their apex substantially in the central area between the electrodes.
37. (canceled)
38. A radiation system according to claim 12, wherein platelets have concentric conical surfaces and/or comprise at least one planar section.
39. (canceled)
40. (canceled)
41. A radiation system according to claim 12, comprising a wiping module provided with a multiple number of wiping elements movable along respective platelet surfaces.
42. (canceled)
43. (canceled)
44. (canceled)
45. (canceled)
46. (canceled)
47. A lithographic apparatus comprising:
- a radiation system constructed and arranged to generate a beam of radiation defining in a radiation space, the radiation system comprising: a plasma produced discharge source constructed and arranged to generate extreme ultraviolet radiation, the discharge source comprising a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system constructed and arranged to produce a discharge between said pair of electrodes so as to provide a pinch plasma between said electrodes; and a debris catching shield constructed and arranged to catch debris from said electrodes, to shield said electrodes from a line of sight provided in the radiation space, and to provide an aperture to a central area between said electrodes in said line of sight; a patterning device constructed and arranged to pattern the beam of radiation; and a projection system constructed and arranged to project the patterned beam of radiation onto a substrate.
Type: Application
Filed: Nov 27, 2007
Publication Date: Jun 10, 2010
Applicant: ASML NETHERLANDS B.V. (Veldhoven)
Inventors: Arnoud Cornelis Wassink (Veldhoven), Vadim Yevgenyevich Banine (Helmond), Vladimir Vitalevitch Ivanov (Moscow), Konstantin Nikolaevitch Koshelev (Troitsk), Theodorus Petrus Maria Cadee (Vlierden), Vladimir Mihailòvitch Krivtsun (Troitsk), Derk Jan Wilfred Klunder (Geldrop), Maarten Marinus Johannes Wilhelmus Van Herpen (Heesch), Paul Peter Anna Antonius Brom (Eindhoven), Wouter Anthon Soer (Nijmegen), Denis Alexandrovich Glushkov (Witten)
Application Number: 12/519,077
International Classification: G03B 27/54 (20060101); G21K 5/04 (20060101);