Patents by Inventor Dennis M. Hausmann

Dennis M. Hausmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12131909
    Abstract: Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.
    Type: Grant
    Filed: October 12, 2023
    Date of Patent: October 29, 2024
    Assignee: Lam Research Corporation
    Inventors: Kashish Sharma, Taeseung Kim, Samantha S. H. Tan, Dennis M. Hausmann
  • Publication number: 20240038539
    Abstract: Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.
    Type: Application
    Filed: October 12, 2023
    Publication date: February 1, 2024
    Inventors: Kashish Sharma, Taeseung Kim, Samantha S.H. Tan, Dennis M. Hausmann
  • Publication number: 20240030062
    Abstract: Methods and apparatuses for an integration scheme for forming a fully aligned via using selective deposition of graphene on metal surfaces and selective deposition of an inhibitor layer on exposed barrier surfaces prior to depositing dielectric material are provided.
    Type: Application
    Filed: April 15, 2022
    Publication date: January 25, 2024
    Inventors: Dennis M. Hausmann, Pankaj Ghanshyam Ramnani, Kashish Sharma, Paul C. Lemaire, Arpan Pravin Mahorowala
  • Publication number: 20230386831
    Abstract: The present disclosure relates to methods and apparatuses for selective deposition on a surface. In particular, a silicon-containing inhibitor can be used to selectively bind to a first region, thus inhibiting deposition of a material on that first region.
    Type: Application
    Filed: September 23, 2021
    Publication date: November 30, 2023
    Inventors: Kashish SHARMA, Paul C. LEMAIRE, Dennis M. HAUSMANN
  • Patent number: 11823909
    Abstract: Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.
    Type: Grant
    Filed: January 15, 2019
    Date of Patent: November 21, 2023
    Assignee: Lam Research Corporation
    Inventors: Kashish Sharma, Taeseung Kim, Samantha Tan, Dennis M. Hausmann
  • Publication number: 20230273516
    Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.
    Type: Application
    Filed: April 10, 2023
    Publication date: August 31, 2023
    Inventors: Jeffrey MARKS, George Andrew ANTONELLI, Richard A. GOTTSCHO, Dennis M. HAUSMANN, Adrien LAVOIE, Thomas Joseph KNISLEY, Sirish K. REDDY, Bhadri N. VARADARAJAN, Artur KOLICS
  • Publication number: 20230266662
    Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.
    Type: Application
    Filed: April 10, 2023
    Publication date: August 24, 2023
    Inventors: Jeffrey MARKS, George Andrew ANTONELLI, Richard A. GOTTSCHO, Dennis M. HAUSMANN, Adrien LAVOIE, Thomas Joseph KNISLEY, Sirish K. REDDY, Bhadri N. VARADARAJAN, Artur KOLICS
  • Publication number: 20220319854
    Abstract: Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non-hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.
    Type: Application
    Filed: June 21, 2022
    Publication date: October 6, 2022
    Inventors: Dennis M. HAUSMANN, Paul C. LEMAIRE
  • Patent number: 11404275
    Abstract: Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.
    Type: Grant
    Filed: March 1, 2019
    Date of Patent: August 2, 2022
    Assignee: Lam Research Corporation
    Inventors: Dennis M. Hausmann, Paul C. Lemaire
  • Publication number: 20220075260
    Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.
    Type: Application
    Filed: November 16, 2021
    Publication date: March 10, 2022
    Applicant: Lam Research Corporation
    Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
  • Publication number: 20220059348
    Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.
    Type: Application
    Filed: September 2, 2021
    Publication date: February 24, 2022
    Inventors: Hu Kang, Shankar Swaminathan, Jun Qian, Wanki Kim, Dennis M. Hausmann, Bart J. van Schravendijk, Adrien LaVoie
  • Patent number: 11209729
    Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.
    Type: Grant
    Filed: November 21, 2019
    Date of Patent: December 28, 2021
    Assignee: Lam Research Corporation
    Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics
  • Patent number: 11133180
    Abstract: Provided herein are methods and apparatus for filling one or more gaps on a semiconductor substrate. The disclosed embodiments are especially useful for forming seam-free, void-free fill in both narrow and wide features. The methods may be performed without any intervening etching operations to achieve a single step deposition. In various implementations, a first operation is performed using a novel PEALD fill mechanism to fill narrow gaps and line wide gaps. A second operation may be performed using PECVD methods to continue filling the wide gaps.
    Type: Grant
    Filed: May 31, 2019
    Date of Patent: September 28, 2021
    Assignee: Lam Research Corporation
    Inventors: Hu Kang, Shankar Swaminathan, Jun Qian, Wanki Kim, Dennis M. Hausmann, Bart J. van Schravendijk, Adrien LaVoie
  • Patent number: 11107683
    Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.
    Type: Grant
    Filed: March 30, 2020
    Date of Patent: August 31, 2021
    Assignee: Lam Research Corporation
    Inventors: David Charles Smith, Jon Henri, Dennis M. Hausmann, Paul C. Lemaire
  • Patent number: 10998187
    Abstract: Methods are provided for conducting a deposition on a semiconductor substrate by selectively depositing a material on the substrate. The substrate has a plurality of substrate materials, each with a different nucleation delay corresponding to the material deposited thereon. Specifically, the nucleation delay associated with a first substrate material on which deposition is intended is less than the nucleation delay associated with a second substrate material on which deposition is not intended according to a nucleation delay differential, which degrades as deposition proceeds. A portion of the deposited material is etched to reestablish the nucleation delay differential between the first and the second substrate materials. The material is further selectively deposited on the substrate.
    Type: Grant
    Filed: December 13, 2019
    Date of Patent: May 4, 2021
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Kapu Sirish Reddy, Meliha Gozde Rainville, Nagraj Shankar, Dennis M. Hausmann, David Charles Smith, Karthik Sivaramakrishnan, David W. Porter
  • Publication number: 20210098257
    Abstract: Selective deposition of a sacrificial material on a semiconductor substrate, the substrate having a surface with a plurality of regions of substrate materials having different selectivities for the sacrificial material, may be conducted such that substantial deposition of the sacrificial material occurs on a first region of the substrate surface, and no substantial deposition occurs on a second region of the substrate surface. Deposition of a non-sacrificial material may then be conducted on the substrate, such that substantial deposition of the non-sacrificial material occurs on the second region and no substantial deposition of the non-sacrificial material occurs on the first region. The sacrificial material may then be removed such that net deposition of the non-sacrificial material occurs substantially only on the second region.
    Type: Application
    Filed: January 15, 2019
    Publication date: April 1, 2021
    Inventors: Kashish Sharma, Taeseung Kim, Samantha Tan, Dennis M. Hausmann
  • Patent number: 10903071
    Abstract: Methods and apparatuses for selectively depositing oxide on an oxide surface relative to a nitride surface are described herein. Methods involve pre-treating a substrate surface using ammonia and/or nitrogen plasma and selectively depositing oxide on an oxide surface using alternating pulses of an aminosilane silicon precursor and an oxidizing agent in a thermal atomic layer deposition reaction without depositing oxide on an exposed nitride surface.
    Type: Grant
    Filed: March 16, 2020
    Date of Patent: January 26, 2021
    Assignee: Lam Research Corporation
    Inventors: David Charles Smith, Dennis M. Hausmann
  • Publication number: 20210005460
    Abstract: Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.
    Type: Application
    Filed: March 1, 2019
    Publication date: January 7, 2021
    Inventors: Dennis M. Hausmann, Paul C. Lemaire
  • Patent number: 10843618
    Abstract: Methods and systems for conformality modulation of metal oxide films in atomic layer deposition (ALD) are provided. Some example methods use chemical inhibition. An example system for performing such a method comprises a chamber; a source of precursor gas; a source of inhibiting precursor gas; one or more injectors having respective gas flow paths, each having an inlet connectable to the source of the precursor or the inhibiting precursor gas, and being adapted to deliver into the chamber, separately or in conjunction with another injector, precursor gas at a first gaseous flow rate in a first region of the plurality of regions to form a first film at a first deposition rate, and being adapted to deliver inhibiting precursor gas at a second gaseous flow rate in the same or a second region of the plurality of regions to inhibit growth of the first film.
    Type: Grant
    Filed: April 25, 2018
    Date of Patent: November 24, 2020
    Assignee: Lam Research Corporation
    Inventors: David C. Smith, Dennis M. Hausmann
  • Patent number: 10831096
    Abstract: Vacuum-integrated photoresist-less methods and apparatuses for forming metal hardmasks can provide sub-30 nm patterning resolution. A metal-containing (e.g., metal salt or organometallic compound) film that is sensitive to a patterning agent is deposited on a semiconductor substrate. The metal-containing film is then patterned directly (i.e., without the use of a photoresist) by exposure to the patterning agent in a vacuum ambient to form the metal mask. For example, the metal-containing film is photosensitive and the patterning is conducted using sub-30 nm wavelength optical lithography, such as EUV lithography.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: November 10, 2020
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Jeffrey Marks, George Andrew Antonelli, Richard A. Gottscho, Dennis M. Hausmann, Adrien LaVoie, Thomas Joseph Knisley, Sirish K. Reddy, Bhadri N. Varadarajan, Artur Kolics