Patents by Inventor Deodatta Vinayak Shenai-Khatkhate
Deodatta Vinayak Shenai-Khatkhate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9957612Abstract: Disclosed herein is a delivery device comprising a chamber; a gas inlet; a gas outlet; and a dip tube contained within the chamber and having an upper portion and a lower portion, the upper portion of the dip tube being in fluid communication with the gas inlet and being operative to permit the entry of a carrier gas; the lower portion of the dip tube extending into the chamber, the lower portion of the dip tube terminating in an outlet end; and a sleeve; where the sleeve has a first end and a second end; the first end being in an interference fit with the lower portion of the dip tube; and where the sleeve vibrates upon being subjected to a disturbance.Type: GrantFiled: December 11, 2014Date of Patent: May 1, 2018Assignee: CERES TECHNOLOGIES, INC.Inventors: Egbert Woelk, Ronald L. DiCarlo, Deodatta Vinayak Shenai-Khatkhate
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Patent number: 9403145Abstract: An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.Type: GrantFiled: March 9, 2015Date of Patent: August 2, 2016Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLCInventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, Jr., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
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Publication number: 20150203962Abstract: Disclosed herein is a delivery device comprising a chamber; a gas inlet; a gas outlet; and a dip tube contained within the chamber and having an upper portion and a lower portion, the upper portion of the dip tube being in fluid communication with the gas inlet and being operative to permit the entry of a carrier gas; the lower portion of the dip tube extending into the chamber, the lower portion of the dip tube terminating in an outlet end; and a sleeve; where the sleeve has a first end and a second end; the first end being in an interference fit with the lower portion of the dip tube; and where the sleeve vibrates upon being subjected to a disturbance.Type: ApplicationFiled: December 11, 2014Publication date: July 23, 2015Inventors: Egbert Woelk, Ronald L. DiCarlo, Deodatta Vinayak Shenai-Khatkhate
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Publication number: 20150174552Abstract: An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.Type: ApplicationFiled: March 9, 2015Publication date: June 25, 2015Inventors: Ravindra S. DIXIT, Hua BAI, Curtis D. MODTLAND, Robert A. WARE, John G. PENDERGAST, JR., Christopher P. CHRISTENSON, Deodatta Vinayak SHENAI-KHATKHATE, Artashes AMAMCHYAN, Kenneth M. CROUCH, Robert F. POLCARI
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Patent number: 9006475Abstract: A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.Type: GrantFiled: August 15, 2012Date of Patent: April 14, 2015Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLCInventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, Jr., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
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Patent number: 8962893Abstract: Methods of purifying crude cyclopentadienyl magnesium compounds using a scavenging agent are provided. The purified cyclopentadienyl magnesium compounds have very low levels of metallic impurities.Type: GrantFiled: August 28, 2012Date of Patent: February 24, 2015Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik
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Publication number: 20140061956Abstract: Methods of purifying crude cyclopentadienyl magnesium compounds using a scavenging agent are provided. The purified cyclopentadienyl magnesium compounds have very low levels of metallic impurities.Type: ApplicationFiled: August 28, 2012Publication date: March 6, 2014Applicant: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak SHENAI-KHATKHATE, Stephen J. MANZIK
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Publication number: 20130211118Abstract: A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.Type: ApplicationFiled: August 15, 2012Publication date: August 15, 2013Applicants: Rohm and Haas Electronic Materials LLC, Dow Global Technologies Inc.Inventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, JR., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
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Patent number: 8343580Abstract: Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.Type: GrantFiled: September 14, 2010Date of Patent: January 1, 2013Assignee: Rohm and Haas Electronic Materials LLCInventors: Qing Min Wang, Deodatta Vinayak Shenai-Khatkhate, Huazhi Li
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Patent number: 8277886Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.Type: GrantFiled: May 22, 2007Date of Patent: October 2, 2012Assignee: Rohm and Haas Electronic Materials LLCInventor: Deodatta Vinayak Shenai-Khatkhate
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Patent number: 8277887Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.Type: GrantFiled: June 28, 2011Date of Patent: October 2, 2012Assignee: Rohm and Haas Electronic Materials LLCInventor: Deodatta Vinayak Shenai-Khatkhate
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Patent number: 8142847Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.Type: GrantFiled: March 3, 2008Date of Patent: March 27, 2012Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qin-Min Wang
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Patent number: 8101787Abstract: A method of preparing an ultra-pure organometallic compound comprising using a microchannel device and ionic liquid solvent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.Type: GrantFiled: February 5, 2010Date of Patent: January 24, 2012Assignee: Rohm and Haas CompanyInventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
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Patent number: 8101048Abstract: This invention relates to methods of removing impurities from compounds having similar volatilities to form ultra high purity compounds.Type: GrantFiled: June 30, 2008Date of Patent: January 24, 2012Assignee: Rohm and Haas CompanyInventors: Francis Joseph Lipiecki, Stephen G Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
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Publication number: 20110287184Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.Type: ApplicationFiled: August 6, 2011Publication date: November 24, 2011Applicant: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak SHENAI-KHATKHATE, Stephen J. Manzik, Qing-Min Wang
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Publication number: 20110256313Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.Type: ApplicationFiled: June 28, 2011Publication date: October 20, 2011Applicant: Rohm and Haas Electric Materials LLCInventor: Deodatta Vinayak SHENAI-KHATKHATE
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Patent number: 8012536Abstract: Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.Type: GrantFiled: June 5, 2008Date of Patent: September 6, 2011Assignee: Rohm and Haas Electronic Materials LLCInventors: Deodatta Vinayak Shenai-Khatkhate, Huazhi Li, Qing Min Wang
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Patent number: 7989323Abstract: Methods of doping a III-V compound semiconductor film are disclosed.Type: GrantFiled: June 21, 2010Date of Patent: August 2, 2011Assignee: Rohm and Haas Electronic Materials LLCInventor: Deodatta Vinayak Shenai-Khatkhate
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Publication number: 20110172452Abstract: A method of preparing an ultra-pure organometallic compound comprising using a microchannel device and ionic liquid solvent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.Type: ApplicationFiled: February 5, 2010Publication date: July 14, 2011Applicant: ROHM AND HAAS COMPANYInventors: Francis Joseph Lipiecki, Stephen G. Maroldo, DEODATTA VINAYAK SHENAI-KHATKHATE, Robert A. Ware
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Patent number: 7939684Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.Type: GrantFiled: February 5, 2010Date of Patent: May 10, 2011Assignee: Rohm and Haas CompanyInventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware