Patents by Inventor Deodatta Vinayak Shenai-Khatkhate

Deodatta Vinayak Shenai-Khatkhate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9957612
    Abstract: Disclosed herein is a delivery device comprising a chamber; a gas inlet; a gas outlet; and a dip tube contained within the chamber and having an upper portion and a lower portion, the upper portion of the dip tube being in fluid communication with the gas inlet and being operative to permit the entry of a carrier gas; the lower portion of the dip tube extending into the chamber, the lower portion of the dip tube terminating in an outlet end; and a sleeve; where the sleeve has a first end and a second end; the first end being in an interference fit with the lower portion of the dip tube; and where the sleeve vibrates upon being subjected to a disturbance.
    Type: Grant
    Filed: December 11, 2014
    Date of Patent: May 1, 2018
    Assignee: CERES TECHNOLOGIES, INC.
    Inventors: Egbert Woelk, Ronald L. DiCarlo, Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 9403145
    Abstract: An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.
    Type: Grant
    Filed: March 9, 2015
    Date of Patent: August 2, 2016
    Assignees: Dow Global Technologies LLC, Rohm and Haas Electronic Materials LLC
    Inventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, Jr., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
  • Publication number: 20150203962
    Abstract: Disclosed herein is a delivery device comprising a chamber; a gas inlet; a gas outlet; and a dip tube contained within the chamber and having an upper portion and a lower portion, the upper portion of the dip tube being in fluid communication with the gas inlet and being operative to permit the entry of a carrier gas; the lower portion of the dip tube extending into the chamber, the lower portion of the dip tube terminating in an outlet end; and a sleeve; where the sleeve has a first end and a second end; the first end being in an interference fit with the lower portion of the dip tube; and where the sleeve vibrates upon being subjected to a disturbance.
    Type: Application
    Filed: December 11, 2014
    Publication date: July 23, 2015
    Inventors: Egbert Woelk, Ronald L. DiCarlo, Deodatta Vinayak Shenai-Khatkhate
  • Publication number: 20150174552
    Abstract: An apparatus for continuously manufacturing organometallic compounds is provided where the apparatus has a source of a first reactant stream wherein the first reactant comprises a metal; a source of a second reactant stream; a laminar flow contacting zone for cocurrently contacting the first reactant stream and the second reactant stream; a mixing zone comprising a turbulence-promoting device; and a heat transfer zone.
    Type: Application
    Filed: March 9, 2015
    Publication date: June 25, 2015
    Inventors: Ravindra S. DIXIT, Hua BAI, Curtis D. MODTLAND, Robert A. WARE, John G. PENDERGAST, JR., Christopher P. CHRISTENSON, Deodatta Vinayak SHENAI-KHATKHATE, Artashes AMAMCHYAN, Kenneth M. CROUCH, Robert F. POLCARI
  • Patent number: 9006475
    Abstract: A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: April 14, 2015
    Assignees: Rohm and Haas Electronic Materials LLC, Dow Global Technologies LLC
    Inventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, Jr., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
  • Patent number: 8962893
    Abstract: Methods of purifying crude cyclopentadienyl magnesium compounds using a scavenging agent are provided. The purified cyclopentadienyl magnesium compounds have very low levels of metallic impurities.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: February 24, 2015
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik
  • Publication number: 20140061956
    Abstract: Methods of purifying crude cyclopentadienyl magnesium compounds using a scavenging agent are provided. The purified cyclopentadienyl magnesium compounds have very low levels of metallic impurities.
    Type: Application
    Filed: August 28, 2012
    Publication date: March 6, 2014
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak SHENAI-KHATKHATE, Stephen J. MANZIK
  • Publication number: 20130211118
    Abstract: A method of continuously manufacturing organometallic compounds is provided where two or more reactants are conveyed to a reactor having a laminar flow contacting zone, a heat transfer zone, and a mixing zone having a turbulence-promoting device; and causing the reactants to form the organometallic compound.
    Type: Application
    Filed: August 15, 2012
    Publication date: August 15, 2013
    Applicants: Rohm and Haas Electronic Materials LLC, Dow Global Technologies Inc.
    Inventors: Ravindra S. Dixit, Hua Bai, Curtis D. Modtland, Robert A. Ware, John G. Pendergast, JR., Christopher P. Christenson, Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Kenneth M. Crouch, Robert F. Polcari
  • Patent number: 8343580
    Abstract: Methods of vapor depositing metal-containing films using certain organometallic compounds containing a carbonyl-containing ligand are disclosed.
    Type: Grant
    Filed: September 14, 2010
    Date of Patent: January 1, 2013
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Qing Min Wang, Deodatta Vinayak Shenai-Khatkhate, Huazhi Li
  • Patent number: 8277886
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Grant
    Filed: May 22, 2007
    Date of Patent: October 2, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 8277887
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Grant
    Filed: June 28, 2011
    Date of Patent: October 2, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 8142847
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Grant
    Filed: March 3, 2008
    Date of Patent: March 27, 2012
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Stephen J. Manzik, Qin-Min Wang
  • Patent number: 8101048
    Abstract: This invention relates to methods of removing impurities from compounds having similar volatilities to form ultra high purity compounds.
    Type: Grant
    Filed: June 30, 2008
    Date of Patent: January 24, 2012
    Assignee: Rohm and Haas Company
    Inventors: Francis Joseph Lipiecki, Stephen G Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Patent number: 8101787
    Abstract: A method of preparing an ultra-pure organometallic compound comprising using a microchannel device and ionic liquid solvent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: January 24, 2012
    Assignee: Rohm and Haas Company
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware
  • Publication number: 20110287184
    Abstract: Compositions including an amido-group-containing vapor deposition precursor and a stabilizing additive are provided. Such compositions have improved thermal stability and increased volatility as compared to the amido-group-containing vapor deposition precursor itself. These compositions are useful in the deposition of thin films, such as by atomic layer deposition.
    Type: Application
    Filed: August 6, 2011
    Publication date: November 24, 2011
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak SHENAI-KHATKHATE, Stephen J. Manzik, Qing-Min Wang
  • Publication number: 20110256313
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Application
    Filed: June 28, 2011
    Publication date: October 20, 2011
    Applicant: Rohm and Haas Electric Materials LLC
    Inventor: Deodatta Vinayak SHENAI-KHATKHATE
  • Patent number: 8012536
    Abstract: Methods of forming metal-containing layers are provided where heteroleptic organometallic compounds containing at least one formamidinate ligand are conveyed in a gaseous form to a reactor; and films comprising a metal are deposited on a substrate. These heteroleptic organometallic compounds have improved properties over conventional vapor deposition precursors. Such compounds are suitable for use as vapor deposition precursors including direct liquid injection. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds or their solutions in organic solvents.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: September 6, 2011
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Huazhi Li, Qing Min Wang
  • Patent number: 7989323
    Abstract: Methods of doping a III-V compound semiconductor film are disclosed.
    Type: Grant
    Filed: June 21, 2010
    Date of Patent: August 2, 2011
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Publication number: 20110172452
    Abstract: A method of preparing an ultra-pure organometallic compound comprising using a microchannel device and ionic liquid solvent to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Application
    Filed: February 5, 2010
    Publication date: July 14, 2011
    Applicant: ROHM AND HAAS COMPANY
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, DEODATTA VINAYAK SHENAI-KHATKHATE, Robert A. Ware
  • Patent number: 7939684
    Abstract: A method of preparing an ultra-pure metal amidinate compound comprising using a microchannel device for synthesis in reacting a metal halide solution with a lithium amidinate solution to produce an ultra-pure alkylmetal compound for processes such as chemical vapor deposition.
    Type: Grant
    Filed: February 5, 2010
    Date of Patent: May 10, 2011
    Assignee: Rohm and Haas Company
    Inventors: Francis Joseph Lipiecki, Stephen G. Maroldo, Deodatta Vinayak Shenai-Khatkhate, Robert A. Ware