Abstract: Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

Abstract: A method of purifying an organometallic compound by heating the organometallic compound in the presence of a trialkyl aluminum compound and a catalyst.

Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.

Abstract: Compositions including germanium compounds suitable for use as vapor phase deposition precursors for germanium-containing films are provided. Methods of depositing films containing germanium using such compositions are also provided. Such germanium-containing films are particularly useful in the manufacture of electronic devices.

Abstract: Organometallic compounds of Group IIB and IIIA metals that are substantially pure and contain low levels of oxygenated impurities are provided. Also provided are methods of preparing such organometallic compounds.

Abstract: Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

Abstract: Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.

Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3?n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.

Abstract: A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.

Abstract: Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

Abstract: Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.

Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.

Abstract: A method of preparing organometal compounds that does not use oxygenated solvents is provided. The compounds produced by such method are particularly useful as precursor compounds for metalorganic chemical vapor deposition processes used in the manufacture of electronic devices. Methods of depositing metal films using such organometal compounds are also provided.

Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.

Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3-n where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.

Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.

Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.

Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n , where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.