Patents by Inventor Deodatta Vinayak Shenai-Khatkhate

Deodatta Vinayak Shenai-Khatkhate has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080026578
    Abstract: Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.
    Type: Application
    Filed: September 29, 2006
    Publication date: January 31, 2008
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Qing Min Wang
  • Patent number: 7321048
    Abstract: A method of purifying an organometallic compound by heating the organometallic compound in the presence of a trialkyl aluminum compound and a catalyst.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: January 22, 2008
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. DiCarlo, Jr.
  • Publication number: 20070266949
    Abstract: Delivery devices for delivering solid precursor compounds in the vapor phase to reactors are provided. Such devices include a precursor composition of a solid precursor compound with a layer of packing material disposed thereon. Also provided are methods for transporting a carrier gas saturated with the precursor compound for delivery into such CVD reactors.
    Type: Application
    Filed: May 22, 2007
    Publication date: November 22, 2007
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Publication number: 20070154637
    Abstract: Compositions including germanium compounds suitable for use as vapor phase deposition precursors for germanium-containing films are provided. Methods of depositing films containing germanium using such compositions are also provided. Such germanium-containing films are particularly useful in the manufacture of electronic devices.
    Type: Application
    Filed: December 22, 2005
    Publication date: July 5, 2007
    Applicant: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Egbert Woelk
  • Patent number: 7166734
    Abstract: Organometallic compounds of Group IIB and IIIA metals that are substantially pure and contain low levels of oxygenated impurities are provided. Also provided are methods of preparing such organometallic compounds.
    Type: Grant
    Filed: September 2, 2005
    Date of Patent: January 23, 2007
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan
  • Patent number: 7141488
    Abstract: Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: November 28, 2006
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventors: Egbert Woelk, Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 7045451
    Abstract: Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.
    Type: Grant
    Filed: April 2, 2004
    Date of Patent: May 16, 2006
    Assignee: Rohm and Haas Electronic Materials LLC
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 6956127
    Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3?n, where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: October 18, 2005
    Assignee: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo, Jr.
  • Patent number: 6939983
    Abstract: A method of preparing Group VA organometal compounds in high yield and high purity by the reaction of a Grignard reagent with a Group VA metal halide in certain ethereal solvents is provided. A method of preparing Group VA organometal hydrides is also provided.
    Type: Grant
    Filed: May 7, 2004
    Date of Patent: September 6, 2005
    Assignee: Rohm and Haas Electronic Materials, LLC
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Artashes Amamchyan, Michael Brendan Power, Ronald L. DiCarol, Jr., James Edward Felton
  • Publication number: 20040198042
    Abstract: Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.
    Type: Application
    Filed: April 2, 2004
    Publication date: October 7, 2004
    Applicant: Rohm and Haas Electronic Materials, L.L.C.
    Inventor: Deodatta Vinayak Shenai-Khatkhate
  • Publication number: 20040194703
    Abstract: Organometallic compounds suitable for use as vapor phase deposition precursors for Group IV metal-containing films are provided. Methods of depositing Group IV metal-containing films using certain organometallic precursors are also provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.
    Type: Application
    Filed: April 2, 2004
    Publication date: October 7, 2004
    Applicant: Rohm and Haas Electronic Materials, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power
  • Publication number: 20040197945
    Abstract: Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.
    Type: Application
    Filed: April 2, 2004
    Publication date: October 7, 2004
    Applicant: Rohm and Haas Electronic Materials L.L.C.
    Inventors: Egbert Woelk, Deodatta Vinayak Shenai-Khatkhate
  • Patent number: 6770769
    Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.
    Type: Grant
    Filed: April 5, 2003
    Date of Patent: August 3, 2004
    Assignee: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Ronald L. DiCarlo, Jr.
  • Publication number: 20040122248
    Abstract: A method of preparing organometal compounds that does not use oxygenated solvents is provided. The compounds produced by such method are particularly useful as precursor compounds for metalorganic chemical vapor deposition processes used in the manufacture of electronic devices. Methods of depositing metal films using such organometal compounds are also provided.
    Type: Application
    Filed: September 30, 2003
    Publication date: June 24, 2004
    Applicant: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. Dicarlo, Michael L. Timmons
  • Patent number: 6680397
    Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: January 20, 2004
    Assignee: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. DiCarlo, Jr.
  • Publication number: 20030199704
    Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3-n where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities.
    Type: Application
    Filed: November 23, 2002
    Publication date: October 23, 2003
    Applicant: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan
  • Publication number: 20030191333
    Abstract: Trialkylindium compounds are prepared by reacting indium trihalide with a trialkylaluminum compound in the presence of a fluoride salt, wherein the molar ratio of the indium trihalide to the fluoride salt is at least 1:4.5. Such trialkylindium compounds are particularly suitable for use in metalorganic vapor phase epitaxy.
    Type: Application
    Filed: April 5, 2003
    Publication date: October 9, 2003
    Applicant: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Ronald L. Dicarlo
  • Publication number: 20030181746
    Abstract: Disclosed are methods of preparing monoalkyl Group VA metal dihalide compounds in high yield and high purity by the reaction of a Group VA metal trihalide with an organo lithium reagent or a compound of the formula RnM1X3−n , where R is an alkyl, M1 is a Group IIIA metal, X is a halogen and n is an integer fro 1 to 3. Such monoalkyl Group VA metal dihalide compounds are substantially free of oxygenated impurities, ethereal solvents and metallic impurities. Monoalkyl Group VA metal dihydride compounds can be easily produced in high yield and high purity by reducing such monoalkyl Group VA metal dihalide compounds.
    Type: Application
    Filed: January 17, 2003
    Publication date: September 25, 2003
    Applicant: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Michael Brendan Power, Artashes Amamchyan, Ronald L. DiCarlo
  • Publication number: 20030181745
    Abstract: Disclosed are trialkylindium compounds containing two bulky alkyl groups that are liquids or easily liquefiable solids and have sufficient vapor pressure for use in vapor deposition processes, as well as methods of depositing indium containing films using such compounds.
    Type: Application
    Filed: January 17, 2003
    Publication date: September 25, 2003
    Applicant: Shipley Company, L.L.C.
    Inventors: Deodatta Vinayak Shenai-Khatkhate, Ronald L. DiCarlo