Patents by Inventor Der-Chyang Yeh

Der-Chyang Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240162119
    Abstract: An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein, the metallization patterns including a top metal layer including top metal structures, forming a passivation layer over the top metal structures of the first interconnect structure, forming a first opening through the passivation layer, forming a probe pad in the first opening and over the passivation layer, the probe pad being electrically connected to the first top metal structure, performing a circuit probe test on the probe pad, removing the probe pad, and forming a bond pad and a bond via in dielectric layers over the passivation layer, the bond pad and bond via being electrically coupled to a second top metal structure of the top metal structures and a third top metal structure of the top metal structures.
    Type: Application
    Filed: January 6, 2023
    Publication date: May 16, 2024
    Inventors: Ching-Yu Huang, Ting-Chu Ko, Der-Chyang Yeh
  • Patent number: 11984405
    Abstract: A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of non-solder electrical connectors underlying and electrically coupled to the plurality of redistribution lines. The plurality of non-solder electrical connectors includes a corner electrical connector. The corner electrical connector is elongated. An electrical connector is farther away from the corner than the corner electrical connector, wherein the electrical connector is non-elongated.
    Type: Grant
    Filed: July 18, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen
  • Publication number: 20240128218
    Abstract: A semiconductor package includes a first semiconductor substrate, an array of conductive bumps, a second semiconductor substrate, and a spacing pattern. The first semiconductor substrate includes a pad region and an array of first pads disposed within the pad region. The array of conductive bumps is disposed on the array of first pads respectively. The second semiconductor substrate is disposed over the first semiconductor substrate and includes an array of second pads bonded to the array of conductive bumps respectively. The spacing pattern is disposed between the first semiconductor substrate and the second semiconductor substrate, wherein the spacing pattern is located at a periphery of the pad region.
    Type: Application
    Filed: January 19, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Pin Chang, Wei-Cheng Wu, Ming-Shih Yeh, An-Jhih Su, Der-Chyang Yeh
  • Publication number: 20240128211
    Abstract: Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.
    Type: Application
    Filed: April 27, 2023
    Publication date: April 18, 2024
    Inventors: Chih-Wei WU, An-Jhih SU, Hua-Wei TSENG, Ying-Ching SHIH, Wen-Chih CHIOU, Chun-Wei CHEN, Ming Shih YEH, Wei-Cheng WU, Der-Chyang YEH
  • Publication number: 20240128143
    Abstract: Provided are a package structure and a method of forming the same. The method includes: forming an interconnect structure on a substrate; performing a laser grooving process to form a first opening in the interconnect structure and form a debris layer on a sidewall of the first opening in a same step; forming a protective layer to fill in the first opening and cover the debris layer and the interconnect structure; patterning the protective layer to form a second opening, wherein the second opening is spaced from the debris layer by the protective layer; performing a planarization process on the protective layer to expose a topmost contact pad of the interconnect structure; and performing a mechanical dicing process through the second opening to form a third opening in the substrate and cut the substrate into a plurality of semiconductor dies.
    Type: Application
    Filed: February 1, 2023
    Publication date: April 18, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Han Hsieh, Yu-Jin Hu, Hua-Wei Tseng, An-Jhih Su, Der-Chyang Yeh
  • Patent number: 11961796
    Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yueh-Ting Lin, Hua-Wei Tseng, Ming Shih Yeh, Der-Chyang Yeh
  • Patent number: 11961800
    Abstract: A method for forming a via in a semiconductor device and a semiconductor device including the via are disclosed. In an embodiment, the method may include bonding a first terminal and a second terminal of a first substrate to a third terminal and a fourth terminal of a second substrate; separating the first substrate to form a first component device and a second component device; forming a gap fill material over the first component device, the second component device, and the second substrate; forming a conductive via extending from a top surface of the gap fill material to a fifth terminal of the second substrate; and forming a top terminal over a top surface of the first component device, the top terminal connecting the first component device to the fifth terminal of the second substrate through the conductive via.
    Type: Grant
    Filed: July 21, 2022
    Date of Patent: April 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, An-Jhih Su, Chi-Hsi Wu, Wen-Chih Chiou, Tsang-Jiuh Wu, Der-Chyang Yeh, Ming Shih Yeh
  • Patent number: 11955401
    Abstract: A package structure includes a semiconductor device and an adhesive pattern. The adhesive pattern surrounds the semiconductor device, wherein an angle ? is formed between a sidewall of the semiconductor device and a sidewall of the adhesive pattern, 0°<?<90° wherein the adhesive layer has a first opening misaligned with a corner of the semiconductor device closest to the first opening.
    Type: Grant
    Filed: March 13, 2023
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Hui Wang, Der-Chyang Yeh, Shih-Peng Tai, Tsung-Shu Lin, Yi-Chung Huang
  • Publication number: 20240096811
    Abstract: The present disclosure provides a package structure and a method of manufacturing a package. The package structure includes a semiconductor die laterally encapsulated by an encapsulant, a redistribution structure and bumps. The redistribution structure is disposed on the semiconductor die and the encapsulant, and is electrically connected with the at least one semiconductor die. The bumps are disposed on the redistribution structure. The redistribution structure includes dielectric layers and metallic pattern layers sandwiched between the dielectric layers. The redistribution structure includes metallic pads on an outermost dielectric layer of the dielectric layers, and the outmost dielectric layer has undercut cavities beside the metallic pads.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuan-Chung Lu, Bo-Tao Chen, An-Jhih Su, Ming-Shih Yeh, Der-Chyang Yeh
  • Patent number: 11935836
    Abstract: A semiconductor device includes a bridge and a first integrated circuit. The bridge is free of active devices and includes a first conductive connector. The first integrated circuit includes a substrate and a second conductive connector disposed in a first dielectric layer over the substrate. The second conductive connector is directly bonded to the first conductive connector. The second conductive connector includes conductive pads and first conductive vias and a second conductive via between the conductive pads. The second conductive via is not overlapped with the first conductive vias while the first conductive vias are overlapped with one another. A vertical distance between the second conductive via and the first conductive connector is larger than a vertical distance between each of the first conductive vias and the first conductive connector, and a sidewall of the first dielectric layer is substantially flush with a sidewall of the substrate.
    Type: Grant
    Filed: August 9, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Hung Lin, An-Jhih Su, Der-Chyang Yeh, Shih-Guo Shen, Chia-Nan Yuan, Ming-Shih Yeh
  • Publication number: 20240088104
    Abstract: A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of metal pads electrically coupled to the plurality of redistribution lines. The plurality of metal pads includes a corner metal pad closest to the corner, wherein the corner metal pad is a center-facing pad having a bird-beak direction substantially pointing to a center of the package. The plurality of metal pads further includes a metal pad farther away from the corner than the corner metal pad, wherein the metal pad is a non-center-facing pad having a bird-beak direction pointing away from the center of the package.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen, Jie Chen
  • Publication number: 20240079324
    Abstract: A method of forming an integrated circuit (IC) package with improved performance and reliability is disclosed. The method includes forming a singulated IC die, coupling the singulated IC die to a carrier substrate, and forming a routing structure. The singulated IC die has a conductive via and the conductive via has a peripheral edge. The routing structure has a conductive structure coupled to the conductive via. The routing structure further includes a cap region overlapping an area of the conductive via, a routing region having a first width from a top-down view, and an intermediate region having a second width from the top-down view along the peripheral edge of the conductive via. The intermediate region is arranged to couple the cap region to the routing region and the second width is greater than the first width.
    Type: Application
    Filed: November 7, 2023
    Publication date: March 7, 2024
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Jie CHEN, Ying-Ju CHEN, Chen-Hua YU, Der-Chyang YEH, Hsien-Wei CHEN
  • Publication number: 20240072021
    Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.
    Type: Application
    Filed: October 26, 2023
    Publication date: February 29, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wei-Yu Chen, An-Jhih Su, Chi-Hsi Wu, Der-Chyang Yeh, Li-Hsien Huang, Po-Hao Tsai, Ming-Shih Yeh, Ta-Wei Liu
  • Publication number: 20240063030
    Abstract: Provided is a semiconductor device including a substrate, an interconnect structure, a first passivation layer, a stress buffer layer, a pad structure, and a second passivation layer. The interconnect structure is disposed on the substrate. The first passivation layer and the stress buffer layer are disposed on the interconnect structure. The pad structure includes: a lower portion embedded in the first passivation layer and the stress buffer layer, and laterally wrapped by the first passivation layer and the stress buffer layer; and an upper portion on the lower portion. The upper portion has a periphery laterally offset outward from a periphery of the lower portion, so that a bottom surface of the upper portion contacts a top surface of the stress buffer layer. The second passivation layer is disposed on the stress buffer layer and laterally wraps the upper portion of the upper portion of the pad structure.
    Type: Application
    Filed: August 16, 2022
    Publication date: February 22, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Pin Chang, Han-Yi Lu, Wei-Cheng Wu, Der-Chyang Yeh
  • Publication number: 20240055371
    Abstract: Embodiments include a crack stopper structure surrounding an embedded integrated circuit die, and the formation thereof. The crack stopper structure may include multiple layers separated by a fill layer. The layers of the crack stopper may include multiple sublayers, some of the sublayers providing adhesion, hardness buffering, and material gradients for transitioning from one layer of the crack stopper structure to another layer of the crack stopper structure.
    Type: Application
    Filed: January 9, 2023
    Publication date: February 15, 2024
    Inventors: Der-Chyang Yeh, Kuo-Chiang Ting, Yu-Hsiung Wang, Chao-Wen Shih, Sung-Feng Yeh, Ta Hao Sung, Cheng-Wei Huang, Yen-Ping Wang, Chang-Wen Huang, Sheng-Ta Lin, Li-Cheng Hu, Gao-Long Wu
  • Publication number: 20240055311
    Abstract: A semiconductor structure includes a package, an electrical device and an underfill material. The package includes a redistribution structure and at least one die, and the at least one die is disposed on a first side of the redistribution structure. The electrical device is disposed on a second side of the redistribution structure, the electrical device has a top surface and a bottom surface opposite to each other, and the top surface faces the redistribution structure. The underfill material is disposed between the top surface and the redistribution structure and extending toward the bottom surface, the underfill material has an end surface corresponding to the bottom surface, and the end surface is a flat surface. In addition, a manufacturing method of the semiconductor structure is also provided.
    Type: Application
    Filed: August 14, 2022
    Publication date: February 15, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yueh-Ting Lin, Hua-Wei Tseng, An-Jhih Su, Ming-Shih Yeh, Der-Chyang Yeh
  • Publication number: 20240047417
    Abstract: A method includes attaching a first die and a second die to a first wafer, the first wafer comprising: a first carrier substrate; and a first interconnect structure comprising first dielectric layers and first conductive features embedded in the first dielectric layers; attaching a third die to the first die and a fourth die to the second die; attaching a second wafer to the third die and the fourth die, the second wafer comprising: a second carrier substrate; and a second interconnect structure comprising second dielectric layers and second conductive features embedded in the second dielectric layers; removing the first carrier substrate; patterning the first dielectric layers to expose conductive features of the first die and the second die; and forming external connectors through the first dielectric layers, the external connectors being electrically connected to corresponding ones of the conductive features of the first die and the second die.
    Type: Application
    Filed: August 5, 2022
    Publication date: February 8, 2024
    Inventors: Der-Chyang Yeh, Sung-Feng Yeh, Jian-Wei Hong
  • Publication number: 20240030186
    Abstract: A manufacturing method of a package is provided. The method includes the following steps. A wafer substrate having first bonding pads is provided. A die is placed on the wafer substrate, wherein the die comprises second bonding pads bonded to the first bonding pads. The die is encapsulated by an etch stop layer and a first encapsulant. A redistribution structure is disposed over the die, the etch stop layer and the first encapsulant. A portion of the redistribution structure is removed to expose the first encapsulant. The first encapsulant is removed to expose the etch stop layer. A dielectric structure is disposed over the exposed etch stop layer and laterally encapsulates the die and the redistribution structure.
    Type: Application
    Filed: July 25, 2022
    Publication date: January 25, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Der-Chyang Yeh, Sung-Feng Yeh, Jian-Wei Hong
  • Patent number: 11862606
    Abstract: A package includes a corner, a device die, a plurality of redistribution lines underlying the device die, and a plurality of metal pads electrically coupled to the plurality of redistribution lines. The plurality of metal pads includes a corner metal pad closest to the corner, wherein the corner metal pad is a center-facing pad having a bird-beak direction substantially pointing to a center of the package. The plurality of metal pads further includes a metal pad farther away from the corner than the corner metal pad, wherein the metal pad is a non-center-facing pad having a bird-beak direction pointing away from the center of the package.
    Type: Grant
    Filed: June 29, 2021
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen, Jie Chen
  • Patent number: 11854994
    Abstract: A redistribution structure for a semiconductor device and a method of forming the same are provided. The semiconductor device includes a die encapsulated by an encapsulant, the die including a pad, and a connector electrically connected to the pad. The semiconductor device further includes a first via in physical contact with the connector. The first via is laterally offset from the connector by a first non-zero distance in a first direction. The first via has a tapered sidewall.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: December 26, 2023
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Hua Yu, An-Jhih Su, Der-Chyang Yeh, Li-Hsien Huang, Ming Shih Yeh