Patents by Inventor Der-Chyang Yeh
Der-Chyang Yeh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230154881Abstract: A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.Type: ApplicationFiled: January 17, 2023Publication date: May 18, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hua-Wei Tseng, Yueh-Ting Lin, Shao-Yun Chen, Li-Hsien Huang, An-Jhih Su, Ming-Shih Yeh, Der-Chyang Yeh
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Patent number: 11652063Abstract: An embodiment is a structure including a first die having an active surface with a first center point, a molding compound at least laterally encapsulating the first die, and a first redistribution layer (RDL) including metallization patterns extending over the first die and the molding compound. A first portion of the metallization patterns of the first RDL extending over a first portion of a boundary of the first die to the molding compound, the first portion of the metallization patterns not extending parallel to a first line, the first line extending from the first center point of the first die to the first portion of the boundary of the first die.Type: GrantFiled: July 13, 2020Date of Patent: May 16, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsien Hsieh, Li-Han Hsu, Wei-Cheng Wu, Hsien-Wei Chen, Der-Chyang Yeh, Chi-Hsi Wu, Chen-Hua Yu, Tsung-Shu Lin
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Patent number: 11646220Abstract: A method includes forming a metal layer extending into openings of a dielectric layer to contact a first metal pad and a second metal pad, and bonding a bottom terminal of a component device to the metal layer. The metal layer has a first portion directly underlying and bonded to the component device. A raised via is formed on the metal layer, and the metal layer has a second portion directly underlying the raised via. The metal layer is etched to separate the first portion and the second portion of the metal layer from each other. The method further includes coating the raised via and the component device in a dielectric layer, revealing the raised via and a top terminal of the component device, and forming a redistribution line connecting the raised via to the top terminal.Type: GrantFiled: February 14, 2022Date of Patent: May 9, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANYInventors: Chen-Hua Yu, An-Jhih Su, Chi-Hsi Wu, Der-Chyang Yeh, Ming Shih Yeh, Jing-Cheng Lin, Hung-Jui Kuo
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Patent number: 11631611Abstract: Presented herein is a WLCSP intermediate structure and method forming the same, the method comprising forming a first redistribution layer (RDL) on a carrier, the first RDL having mounting pads disposed on the first RDL, and mounting interposer dies on a second side of the first RDL. A second RDL is formed over a second side of the interposer dies, the second RDL having a first side adjacent to the interposer dies, one or more lands disposed on the second RDL, at least one of the one or more lands in electrical contact with at least one of the interposer dies or at least one of the mounting pads. A molding compound is formed around the interposer dies and over a portion of the first RDL prior to the forming the second RDL and the second RDL is formed over at least a portion of the molding compound.Type: GrantFiled: June 14, 2021Date of Patent: April 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Hua Yu, Der-Chyang Yeh
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Patent number: 11626296Abstract: A semiconductor device includes a first die extending through a molding compound layer, a first dummy die having a bottom embedded in the molding compound layer, wherein a height of the first die is greater than a height of the first dummy die, and an interconnect structure over the molding compound layer, wherein a first metal feature of the interconnect structure is electrically connected to the first die and a second metal feature of the interconnect structure is over the first dummy die and extends over a sidewall of the first dummy die.Type: GrantFiled: March 8, 2021Date of Patent: April 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Hua Yu, An-Jhih Su, Chi-Hsi Wu, Der-Chyang Yeh, Hsien-Wei Chen, Wei-Yu Chen
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Patent number: 11626341Abstract: A package structure includes a substrate, a semiconductor device and an adhesive layer. The semiconductor device is disposed on the substrate, wherein an angle ? is formed between one sidewall of the semiconductor device and one of sides of the substrate, 0°<?<90°. The adhesive layer surrounds the semiconductor device on the substrate and at least continuously disposed at two of the sides of the substrate, wherein the adhesive layer has a first opening misaligned with a corner of the semiconductor device closest to the first opening.Type: GrantFiled: March 24, 2022Date of Patent: April 11, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shih-Hui Wang, Der-Chyang Yeh, Shih-Peng Tai, Tsung-Shu Lin, Yi-Chung Huang
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Patent number: 11612057Abstract: A package includes a conductive pad, with a plurality of openings penetrating through the conductive pad. A dielectric layer encircles the conductive pad. The dielectric layer has portions filling the plurality of openings. An Under-Bump Metallurgy (UBM) includes a via portion extending into the dielectric layer to contact the conductive pad. A solder region is overlying and contacting the UBM. An integrated passive device is bonded to the UBM through the solder region.Type: GrantFiled: July 27, 2022Date of Patent: March 21, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsien Hsieh, Chi-Hsi Wu, Chen-Hua Yu, Der-Chyang Yeh, Hsien-Wei Chen, Li-Han Hsu, Wei-Cheng Wu
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Publication number: 20230068082Abstract: A package comprises at least one first device die, and a redistribution line (RDL) structure having the at least one first device die bonded thereto. The RDL structure comprises a plurality of dielectric layers, and a plurality of RDLs formed through the plurality of dielectric layers. A trench is defined proximate to axial edges of the RDL structure through each of the plurality of dielectric layers. The trench prevents damage to portions of the RDL structure located axially inwards of the trench.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yueh-Ting Lin, Hua-Wei Tseng, Ming Shih Yeh, Der-Chyang Yeh
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Patent number: 11594520Abstract: A first package is bonded to a first substrate with first external connections and second external connections. The second external connections are formed using materials that are different than the first external connections in order to provide a thermal pathway from the first package. In a particular embodiment the first external connections are solder balls and the second external connections are copper blocks.Type: GrantFiled: October 19, 2020Date of Patent: February 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANYInventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen, Cheng-Chieh Hsieh, Ming-Yen Chiu
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Publication number: 20230054020Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.Type: ApplicationFiled: November 6, 2022Publication date: February 23, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih Lai, Chien-Chia Chiu, Chen-Hua Yu, Der-Chyang Yeh, Cheng-Hsien Hsieh, Li-Han Hsu, Tsung-Shu Lin, Wei-Cheng Wu, Yu-Chen Hsu
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Patent number: 11587900Abstract: A package structure including IPD and method of forming the same are provided. The package structure includes a die, an encapsulant laterally encapsulating the die, a first RDL structure disposed on the encapsulant and the die, an IPD disposed on the first RDL structure and an underfill layer. The IPD includes a substrate, a first connector on a first side of the substrate and electrically connected to the first RDL structure, a guard structure on a second side of the substrate opposite to the first side and laterally surrounding a connector region, and a second connector disposed within the connector region and electrically connected to a conductive via embedded in the substrate. The underfill layer is disposed to at least fill a space between the first side of the IPD and the first RDL structure. The underfill layer is separated from the connector region by the guard structure.Type: GrantFiled: February 26, 2021Date of Patent: February 21, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hua-Wei Tseng, Yueh-Ting Lin, Shao-Yun Chen, Li-Hsien Huang, An-Jhih Su, Ming-Shih Yeh, Der-Chyang Yeh
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Patent number: 11581250Abstract: A package includes a chip formed in a first area of the package and a molding compound formed in a second area of the package adjacent to the first area. A first polymer layer is formed on the chip and the molding compound, a second polymer layer is formed on the first polymer layer, and a plurality of interconnect structures is formed between the first polymer layer and the second polymer layer. A metal-insulator-metal (MIM) capacitor is formed on the second polymer layer and electrically coupled to at least one of the plurality of interconnect structures. A metal bump is formed over and electrically coupled to at least one of the plurality of interconnect structures.Type: GrantFiled: March 31, 2021Date of Patent: February 14, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shuo-Mao Chen, Der-Chyang Yeh, Chiung-Han Yeh
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Publication number: 20230036283Abstract: A package structure and method of forming the same are provided. The package structure includes a first die and a second die disposed side by side, a first encapsulant laterally encapsulating the first and second dies, a bridge die disposed over and connected to the first and second dies, and a second encapsulant. The bridge die includes a semiconductor substrate, a conductive via and an encapsulant layer. The semiconductor substrate has a through substrate via embedded therein. The conductive via is disposed over a back side of the semiconductor substrate and electrically connected to the through substrate via. The encapsulant layer is disposed over the back side of the semiconductor substrate and laterally encapsulates the conductive via. The second encapsulant is disposed over the first encapsulant and laterally encapsulates the bridge die.Type: ApplicationFiled: October 5, 2022Publication date: February 2, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hung Lin, Chih-Wei Wu, Chia-Nan Yuan, Ying-Ching Shih, An-Jhih Su, Szu-Wei Lu, Ming-Shih Yeh, Der-Chyang Yeh
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Patent number: 11532567Abstract: A package includes a device die, a molding material molding the device die therein, and a through-via penetrating through the molding material. A redistribution line is on a side of the molding material. The redistribution line is electrically coupled to the through-via. A metal ring is close to edges of the package, wherein the metal ring is coplanar with the redistribution line.Type: GrantFiled: September 12, 2019Date of Patent: December 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chen-Hua Yu, Shin-Puu Jeng, Der-Chyang Yeh, Hsien-Wei Chen, Jie Chen
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Publication number: 20220384350Abstract: A semiconductor device includes a bridge and a first integrated circuit. The bridge is free of active devices and includes a first conductive connector. The first integrated circuit includes a substrate and a second conductive connector disposed in a first dielectric layer over the substrate. The second conductive connector is directly bonded to the first conductive connector. The second conductive connector includes conductive pads and first conductive vias and a second conductive via between the conductive pads. The second conductive via is not overlapped with the first conductive vias while the first conductive vias are overlapped with one another. A vertical distance between the second conductive via and the first conductive connector is larger than a vertical distance between each of the first conductive vias and the first conductive connector, and a sidewall of the first dielectric layer is substantially flush with a sidewall of the substrate.Type: ApplicationFiled: August 9, 2022Publication date: December 1, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Hung Lin, An-Jhih Su, Der-Chyang Yeh, Shih-Guo Shen, Chia-Nan Yuan, Ming-Shih Yeh
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Patent number: 11515229Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, a heat sink lid and conductive balls. The die is disposed on a front surface of the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the front surface of the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies. The conductive balls are disposed on the opposite surface of the circuit substrate and electrically connected with the die through the circuit substrate.Type: GrantFiled: March 31, 2020Date of Patent: November 29, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih Lai, Chien-Chia Chiu, Chen-Hua Yu, Der-Chyang Yeh, Cheng-Hsien Hsieh, Li-Han Hsu, Tsung-Shu Lin, Wei-Cheng Wu, Yu-Chen Hsu
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Publication number: 20220375767Abstract: Stacked semiconductor devices and methods of forming the same are provided. Contact pads are formed on a die. A passivation layer is blanket deposited over the contact pads. The passivation layer is subsequently patterned to form first openings, the first openings exposing the contact pads. A buffer layer is blanket deposited over the passivation layer and the contact pads. The buffer layer is subsequently patterned to form second openings, the second opening exposing a first set of the contact pads. First conductive pillars are formed in the second openings. Conductive lines are formed over the buffer layer simultaneously with the first conductive pillars, ends of the conductive lines terminating with the first conductive pillars. An external connector structure is formed over the first conductive pillars and the conductive lines, the first conductive pillars electrically coupling the contact pads to the external connector structure.Type: ApplicationFiled: July 28, 2022Publication date: November 24, 2022Inventors: Hsien-Wei Chen, Der-Chyang Yeh, Li-Hsien Huang
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Patent number: 11508695Abstract: An embodiment package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and a conductive line electrically connecting a first conductive via to a second conductive via. The conductive line includes a first segment over the first integrated circuit die and having a first lengthwise dimension extending in a first direction and a second segment having a second lengthwise dimension extending in a second direction different than the first direction. The second segment extends over a boundary between the first integrated circuit die and the encapsulant.Type: GrantFiled: March 9, 2021Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Hsien Hsieh, Li-Han Hsu, Wei-Cheng Wu, Hsien-Wei Chen, Der-Chyang Yeh, Chi-Hsi Wu, Chen-Hua Yu
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Publication number: 20220367374Abstract: A redistribution structure for a semiconductor device and a method of forming the same are provided. The semiconductor device includes a die encapsulated by an encapsulant, the die including a pad, and a connector electrically connected to the pad. The semiconductor device further includes a first via in physical contact with the connector. The first via is laterally offset from the connector by a first non-zero distance in a first direction. The first via has a tapered sidewall.Type: ApplicationFiled: July 28, 2022Publication date: November 17, 2022Inventors: Chen-Hua Yu, An-Jhih Su, Der-Chyang Yeh, Li-Hsien Huang, Ming Shih Yeh
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Patent number: 11502032Abstract: A chip package including an integrated circuit component, a thermal conductive layer, an insulating encapsulant and a redistribution circuit structure is provided. The integrated circuit component includes an amorphous semiconductor portion located at a back surface thereof. The thermal conductive layer covers the amorphous semiconductor portion of the integrated circuit component, wherein thermal conductivity of the thermal conductive layer is greater than or substantially equal to 10 W/mK. The insulating encapsulant laterally encapsulates the integrated circuit component and the thermal conductive layer. The redistribution circuit structure is disposed on the insulating encapsulant and the integrated circuit component, wherein the redistribution circuit structure is electrically connected to the integrated circuit component.Type: GrantFiled: December 21, 2020Date of Patent: November 15, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Guan-Yu Chen, An-Jhih Su, Der-Chyang Yeh, Li-Hsien Huang, Ming-Shih Yeh