Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.

Abstract: The present application discloses a computing system for implementing an artificial neural network model. The artificial neural network model has a structure of multiple layers. The computing system comprises a first processing unit, a second processing unit, and a third processing unit. The first processing unit performs computations of the first layer based on a first part of input data of the first layer to generate a first part of output data. The second processing unit performs computations of the first layer based on a second part of the input data of the first layer so as to generate a second part of the output data. The third processing unit performs computations of the second layer based on the first part and the second part of the output data. The first processing unit, the second processing unit, and the third processing unit have the same structure.

Abstract: A high bandwidth memory system. In some embodiments, the system includes: a memory stack having a plurality of memory dies and eight 128-bit channels; and a logic die, the memory dies being stacked on, and connected to, the logic die; wherein the logic die may be configured to operate a first channel of the 128-bit channels in: a first mode, in which a first 64 bits operate in pseudo-channel mode, and a second 64 bits operate as two 32-bit fine-grain channels, or a second mode, in which the first 64 bits operate as two 32-bit fine-grain channels, and the second 64 bits operate as two 32-bit fine-grain channels.

Abstract: According to one general aspect, an apparatus may include a plurality of stacked integrated circuit dies that include a memory cell die and a logic die. The memory cell die may be configured to store data at a memory address. The logic die may include an interface to the stacked integrated circuit dies and configured to communicate memory accesses between the memory cell die and at least one external device. The logic die may include a reliability circuit configured to ameliorate data errors within the memory cell die. The reliability circuit may include a spare memory configured to store data, and an address table configured to map a memory address associated with an error to the spare memory. The reliability circuit may be configured to determine if the memory access is associated with an error, and if so completing the memory access with the spare memory.

Abstract: A method of correcting a memory error of a dynamic random-access memory module (DRAM) using a double data rate (DDR) interface, the method includes conducting a memory transaction including multiple bursts with a memory controller to send data from data chips of the DRAM to the memory controller, detecting one or more errors using an ECC chip of the DRAM, determining a number of the bursts having the errors using the ECC chip of the DRAM, determining whether the number of the bursts having the errors is greater than a threshold number, determining a type of the errors, and directing the memory controller based on the determined type of the errors, wherein the DRAM includes a single ECC chip per memory channel.

Abstract: A memory pooling configuration system includes: a plurality of servers, an expansion switch in communication with the plurality of servers, and a memory configuration device. A target server acquires first memory pooling configuration information, which instructs the target server to send a second memory access request to the expansion switch when a virtual address indicated by a first memory access request does not correspond to a physical address space of the target server. The expansion switch acquires third memory pooling configuration information, which instructs the expansion switch to forward the second memory access request to an associated server based on the second memory access request. The associated server acquires second memory pooling configuration information, which instructs the associated server to return the memory access result of the second memory access request to the expansion switch, which forwards the memory access result to the target server.

Abstract: The embodiments of the present invention provide a data communication method, a memory pooling switch device, a cloud computing system, and a storage medium. The data communication method comprises: converting verification preprocessed memory data from a receiver's communication protocol format to a sender's communication protocol format, wherein the receiver's communication protocol format and the sender's communication protocol format are used for asymmetric communication protocols on a communication bus between a server and a memory pooling switch device; performing verification processing on the verification preprocessed memory data to obtain a verification result; transmitting the verification result to the server via the communication bus in the sender's communication protocol format.

Abstract: The present invention provides a switch, which is equipped with multiple connection interfaces, for connecting to multiple external processors respectively, enabling mutual access to the respective memories of these processors through the switch. The switch is configured to: through a memory request service component corresponding to a first processor, set within the switch, receive a first memory request sent by the first processor; convert the first memory request into a second memory request aimed at accessing the memory of a second processor and send this second memory request to a memory response service component corresponding to the second processor within the switch; through the memory response service component, convert the second memory request into a third memory request for accessing local memory and send this third memory request to the second processor to access the memory resources corresponding to the second processor.

Abstract: A system-in-package including a logic die and one or more memory dice can include a reliability availability serviceability (RAS) memory management unit (MMU) for memory error detection, memory error prediction and memory error handling. The RAS MMU can receive memory health information, on-die memory error information, system error information and read address information for the one or more memory dice. The RAS MMU can manage the memory blocks of the one or more memory dice based on the memory health information, on-die memory error type, system error type and read address. The RAS MMU can also further manage the memory blocks based on received on-die memory temperature information and or system temperature information.

Abstract: The present application provides a computer system, a memory expansion device and a method for use in the computer system. The computer system includes multiple hosts and multiple memory expansion devices; the memory expansion devices correspond to the hosts in a one-to-one manner. Each host includes a CPU and a memory; each memory expansion device includes a first interface and multiple second interfaces. The first interface is configured to allow each memory expansion device to communicate with the corresponding CPU via a first coherence interconnection protocol, and the second interface is configured to allow each memory expansion device to communicate with a portion of memory expansion devices via a second coherence interconnection protocol. Any two memory expansion devices communicate with each other via at least two different paths, and the number of memory expansion devices that at least one of the two paths passes through is not more than one.

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: The presented systems enable efficient and effective network communications. The presented systems enable efficient and effective network communications. In one embodiment a memory device includes a memory module, including a plurality of memory chips configured to store information; and an inter-chip network (ICN)/shared smart memory extension (SMX) memory interface controller (ICN/SMX memory interface controller) configured to interface between the memory module and an inter-chip network (ICN), wherein the ICN is configured to communicatively couple the memory device to a parallel processing unit (PPU). In one exemplary implementation, the ICN/SMX memory controller includes a plurality of package buffers, an ICN physical layer interface, a PRC/MAC interface, and a switch. The memory device and be a memory card including memory module (e.g., DDR DIMM, etc.).

Abstract: A 3D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.

Abstract: A memory management method of a data processing system is provided. The memory management method includes: creating a first memory zone and a second memory zone related to a first node of a first server, wherein the first server is located in the data processing system, and the first node includes a processor and a first memory; mapping the first memory zone to the first memory; and mapping the second memory zone to a second memory of a second server, wherein the second server is located in the data processing system, and the processor is configured to access the second memory of the second server through an interface circuit of the first server and through an interface circuit of the second server.

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: According to one general aspect, an apparatus may include a plurality of stacked integrated circuit dies that include a memory cell die and a logic die. The memory cell die may be configured to store data at a memory address. The logic die may include an interface to the stacked integrated circuit dies and configured to communicate memory accesses between the memory cell die and at least one external device. The logic die may include a reliability circuit configured to ameliorate data errors within the memory cell die. The reliability circuit may include a spare memory configured to store data, and an address table configured to map a memory address associated with an error to the spare memory. The reliability circuit may be configured to determine if the memory access is associated with an error, and if so completing the memory access with the spare memory.

Abstract: A general matrix-matrix multiplication (GEMM) dataflow accelerator circuit is disclosed that includes a smart 3D stacking DRAM architecture. The accelerator circuit includes a memory bank, a peripheral lookup table stored in the memory bank, and a first vector buffer to store a first vector that is used as a row address into the lookup table. The circuit includes a second vector buffer to store a second vector that is used as a column address into the lookup table, and lookup table buffers to receive and store lookup table entries from the lookup table. The circuit further includes adders to sum the first product and a second product, and an output buffer to store the sum. The lookup table buffers determine a product of the first vector and the second vector without performing a multiply operation. The embodiments include a hierarchical lookup architecture to reduce latency. Accumulation results are propagated in a systolic manner.

Abstract: An adaptive matrix multiplier. In some embodiments, the matrix multiplier includes a first multiplying unit a second multiplying unit, a memory load circuit, and an outer buffer circuit. The first multiplying unit includes a first inner buffer circuit and a second inner buffer circuit, and the second multiplying unit includes a first inner buffer circuit and a second inner buffer circuit. The memory load circuit is configured to load data from memory, in a single burst of a burst memory access mode, into the first inner buffer circuit of the first multiplying unit; and into the first inner buffer circuit of the second multiplying unit.

Abstract: A task scheduling unit includes a progress detection subunit having circuitry configured to obtain first progress information of a first chip in which the task scheduling unit is located, the first progress information indicating a task execution progress of the first chip; a transmission subunit having circuitry configured to transmit the first progress information to a second chip, wherein the first chip and the second chip are located on a same wafer, and the task execution progress of the first chip is less than a task execution progress of the second chip; and a transfer subunit having circuitry configured to receive first request information transmitted by the second chip in response to the first progress information; and transfer at least some of tasks executed by the first chip to the second chip for execution based on the first request information.

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.