Abstract: The systems and methods are configured to efficiently and effectively include processing capabilities in memory. In one embodiment, a processing in memory (PIM) chip a memory array, logic components, and an interconnection network. The memory array is configured to store information. In one exemplary implementation the memory array includes storage cells and array periphery components. The logic components can be configured to process information stored in the memory array. The interconnection network is configured to communicatively couple the logic components. The interconnection network can include interconnect wires, and a portion of the interconnect wires are located in a metal layer area that is located above the memory array.

Abstract: A dual-model memory interface of a computing system is provided, configurable to present memory interfaces having differently-graded bandwidth capacity to different processors of the computing system. A mode switch controller of the memory interface controller, based on at least an arbitration rule written to a configuration register, switches the memory interface controller between a narrow-band mode and a wide-band mode. In each mode, the memory interface controller disables either a plurality of narrow-band memory interfaces of the memory interface controller according to a first bus standard, or a wide-band memory interface of the memory interface controller according to a second bus standard. The memory interface controller virtualizes a plurality of system memory units of the computing system as a virtual wide-band memory unit according to the second bus standard, or virtualizes a system memory unit of the computing system as a virtual narrow-band memory unit according to the first bus standard.

Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.

Abstract: A configurable computer memory architecture includes a memory device that includes arrays of memory cells, word lines, column select lines, and data lines (including local and non-local data lines). One or more of the lines include a first segment and a second segment that are separated by a gap that prevents transmission of an electrical signal from the first segment to the second segment. Signals are either transmitted between the two segments or prevented from being transmitted between the two segments, depending on how the computer memory architecture is configured. In this manner, the memory device can be adapted for different use cases.

Abstract: The systems and methods are configured to efficiently and effectively include processing capabilities in memory. In one embodiment, a processing in memory (PIM) chip a memory array, logic components, and an interconnection network. The memory array is configured to store information. In one exemplary implementation the memory array includes storage cells and array periphery components. The logic components can be configured to process information stored in the memory array. The interconnection network is configured to communicatively couple the logic components. The interconnection network can include interconnect wires, and a portion of the interconnect wires are located in a metal layer area that is located above the memory array.

Abstract: Embodiments of the disclosure provide systems and methods for allocating memory space in a memory device. The system can include: a memory device for providing the memory space; and a compiler component configured for: receiving a request for allocating a data array having a plurality of data elements in the memory device, wherein each of the plurality of data elements has a logical address; generating an instruction for allocating memory space for the data array in the memory device based on the request; generating device addresses for the plurality of data elements in the memory device based on logical addresses of the plurality of data elements; and allocating the memory space for the data array in the memory device based on the device addresses and the instruction.

Abstract: The systems and methods are configured to efficiently and effectively access memory. In one embodiment, a memory controller comprises a request queue, a buffer, a control component, and a data path system. The request queue receives memory access requests. The control component is configured to process information associated with access requests via a first narrow memory channel and a second narrow memory channel. The first narrow memory channel and the second narrow memory channel can have a portion of command/control communication lines and address communication lines that are included in and shared between the first narrow memory channel and the second narrow memory channel. The data path system can include a first data module and one set of unshared data lines associated with the first memory channel and a second data module and another set of unshared data lines associated with second memory channel.

Abstract: The present disclosure provides an accelerator for processing a vector or matrix operation. The accelerator comprises a vector processing unit comprising a plurality of computation units having circuitry configured to process a vector operation in parallel; a matrix multiplication unit comprising a first matrix multiplication operator, a second matrix multiplication operator, and an accumulator, the first matrix multiplication operator and the second matrix multiplication operator having circuitry configured to process a matrix operation and the accumulator having circuitry configured to accumulate output results of the first matrix multiplication operator and the second matrix multiplication operator; and a memory storing input data for the vector operation or the matrix operation and being configured to communicate with the vector processing unit and the matrix multiplication unit.

Abstract: A flash memory device includes a plurality of flash memory cell arrays, wherein: a flash memory cell array in the plurality of flash memory cell arrays comprises a plurality of layers of flash memory cell planes; and a flash memory cell plane includes a plurality of flash memory cells. The flash memory device further includes a logic circuitry coupled to the plurality of flash memory cell arrays, configured to perform operations using the plurality of flash memory cell arrays; and a sensing circuitry configured to access a corresponding flash memory cell plane among the plurality of flash memory cell planes.

Abstract: A system comprises: a three-dimensional flash memory comprising a plurality of cells; and a controller coupled to the three-dimensional flash memory, configured to: select a block of cells in the three-dimensional flash memory; perform a matrix multiplication on the matrix stored in the block of cells, including performing a vector multiplication in a single sensing step; and output a matrix multiplication result. A matrix is stored in the block of cells.

Abstract: According to one general aspect, an apparatus may include a plurality of stacked integrated circuit dies that include a memory cell die and a logic die. The memory cell die may be configured to store data at a memory address. The logic die may include an interface to the stacked integrated circuit dies and configured to communicate memory accesses between the memory cell die and at least one external device. The logic die may include a reliability circuit configured to ameliorate data errors within the memory cell die. The reliability circuit may include a spare memory configured to store data, and an address table configured to map a memory address associated with an error to the spare memory. The reliability circuit may be configured to determine if the memory access is associated with an error, and if so completing the memory access with the spare memory.

Abstract: A processing element/unit can include a plurality of networks, a plurality of cores, crossbar interconnects, a plurality of memory controllers and local memory on an integrated circuit (IC) chip. The plurality of cores can be coupled together by the plurality of networks on chip. The crossbar interconnects can couple the networks of cores to the plurality of memory controllers. The plurality of memory controllers can be configured to access data stored in off-chip memory. The local memory can be configured to cache portions of the accessed data. The local memory can be directly accessible by the network of processing cores, or can be distributed across the plurality of memory controllers. The memory controllers can be narrow channel (NC) memory controllers having widths of 4, 8, 12, 16 or a multiple of 4 bits.

Abstract: Embodiments of the disclosure provide memory devices and methods related to memory accessing.

Abstract: A high bandwidth memory (HBM) system includes a first HBM+ card. The first HBM+ card includes a plurality of HBM+ cubes. Each HBM+ cube has a logic die and a memory die. The first HBM+ card also includes a HBM+ card controller coupled to each of the plurality of HBM+ cubes and configured to interface with a host, a pin connection configured to connect to the host, and a fabric connection configured to connect to at least one HBM+ card.

Abstract: Embodiments of the disclosure provide devices and methods for performing a top-k function. The device can include: a memory comprising a plurality of register files for storing the data elements, the plurality of register files comprising a parent register file and a first child register file associated with the parent register file, wherein the parent register file is associated with: first interface circuitry configured for reading a first parent data element from the parent register file and receiving a first child data element and a second child data element from the first child register file; and first comparison circuitry configured for updating the parent register file and the first child register file based on the first parent data element, the first child data element, and the second child data element according to a given principle.

Abstract: A general matrix-matrix multiplication (GEMM) dataflow accelerator circuit is disclosed that includes a smart 3D stacking DRAM architecture. The accelerator circuit includes a memory bank, a peripheral lookup table stored in the memory bank, and a first vector buffer to store a first vector that is used as a row address into the lookup table. The circuit includes a second vector buffer to store a second vector that is used as a column address into the lookup table, and lookup table buffers to receive and store lookup table entries from the lookup table. The circuit further includes adders to sum the first product and a second product, and an output buffer to store the sum. The lookup table buffers determine a product of the first vector and the second vector without performing a multiply operation. The embodiments include a hierarchical lookup architecture to reduce latency. Accumulation results are propagated in a systolic manner.

Abstract: A cache coherency mode includes: in response to a read request from a device in the host-device system for an instance of the shared data, sending the instance of the shared data from the host device to that device; and, in response to write request from a device, storing data associated with the write request in the cache of the host device. Shared data is pinned in the cache of the host device, and is not cached in any of the other devices in the host-device system. Because there is only one cached copy of the shared data in the host-device system, the devices in that system are cache coherent.

Abstract: A memory module includes a memory controller including: a host layer; a media layer coupled to a non-volatile memory; and a logic core coupled to the host layer, the media layer, and a volatile memory, the logic core storing a first write group table including a plurality of rows, and the logic core being configured to: receive a persistent write command including a cache line address and a write group identifier; receive data associated with the persistent write command; write the data to the volatile memory at the cache line address; store the cache line address in a selected buffer of a plurality of buffers in a second write group table, the selected buffer corresponding to the write group identifier; and update a row of the first write group table to identify locations of the selected buffer containing valid entries, the row corresponding to the write group identifier.

Abstract: The present disclosure relates to an accelerator for systolic array-friendly data placement. The accelerator may include: a systolic array comprising a plurality of operation units, wherein the systolic array is configured to receive staged input data and perform operations using the staged input to generate staged output data, the staged output data comprising a number of segments; a controller configured to execute one or more instructions to generate a pattern generation signal; a data mask generator; and a memory configured to store the staged output data using the generated masks. The data mask generator may include circuitry configured to: receive the pattern generation signal from the controller, and, based on the received signal, generate a mask corresponding to each segment of the staged output data.

Abstract: According to one general aspect, an apparatus may include a plurality of stacked integrated circuit dies that include a memory cell die and a logic die. The memory cell die may be configured to store data at a memory address. The logic die may include an interface to the stacked integrated circuit dies and configured to communicate memory accesses between the memory cell die and at least one external device. The logic die may include a reliability circuit configured to ameliorate data errors within the memory cell die. The reliability circuit may include a spare memory configured to store data, and an address table configured to map a memory address associated with an error to the spare memory. The reliability circuit may be configured to determine if the memory access is associated with an error, and if so completing the memory access with the spare memory.