Abstract: A dual-model memory interface of a computing system is provided, configurable to present memory interfaces having differently-graded bandwidth capacity to different processors of the computing system. A mode switch controller of the memory interface controller, based on at least an arbitration rule written to a configuration register, switches the memory interface controller between a narrow-band mode and a wide-band mode. In each mode, the memory interface controller disables either a plurality of narrow-band memory interfaces of the memory interface controller according to a first bus standard, or a wide-band memory interface of the memory interface controller according to a second bus standard. The memory interface controller virtualizes a plurality of system memory units of the computing system as a virtual wide-band memory unit according to the second bus standard, or virtualizes a system memory unit of the computing system as a virtual narrow-band memory unit according to the first bus standard.

Abstract: In various embodiments, this application provides an audio information processing method, an audio information processing apparatus, an electronic device, and a storage medium. An audio information processing method in an embodiment includes: obtaining a first audio feature corresponding to audio information; performing, based on an audio feature at a specified moment in the first audio feature and audio features adjacent to the audio feature at the specified moment, an encoding on the audio feature at the specified moment to obtain a second audio feature corresponding to the audio information; obtaining decoded text information corresponding to the audio information; and obtaining, based on the second audio features and the decoded text information, text information corresponding to the audio information.

Abstract: An adaptive matrix multiplier. In some embodiments, the matrix multiplier includes a first multiplying unit a second multiplying unit,a memory load circuit, and an outer buffer circuit. The first multiplying unit includes a first inner buffer circuit and a second inner buffer circuit, and the second multiplying unit includes a first inner buffer circuit and a second inner buffer circuit. The memory load circuit is configured to load data from memory, in a single burst of a burst memory access mode, into the first inner buffer circuit of the first multiplying unit; and into the first inner buffer circuit of the second multiplying unit.

Abstract: A memory device includes an array of 2T1C DRAM cells and a memory controller. The DRAM cells are arranged as a plurality of rows and columns of DRAM cells. The memory controller is internal to the memory device and is coupled to the array of DRAM cells. The memory controller is capable of receiving commands input to the memory device and is responsive to the received commands to control row-major access and column-major access to the array of DRAM cells. In one embodiment, each transistor of a memory cell includes a terminal directly coupled to a storage node of the capacitor. In another embodiment, a first transistor of a memory cell includes a terminal directly coupled to a storage node of the capacitor, and a second transistor of the 2T1C memory cell includes a gate terminal directly coupled to the storage node of the capacitor.

Abstract: A method of processing in-memory commands in a high-bandwidth memory (HBM) system includes sending a function-in-HBM instruction to the HBM by a HBM memory controller of a GPU. A logic component of the HBM receives the FIM instruction and coordinates the instructions execution using the controller, an ALU, and a SRAM located on the logic component.

Abstract: Embodiments of the disclosure provide methods and systems for memory management. The method can include: receiving a request for allocating target node data to a memory space, wherein the memory space includes a buffer and an external memory and the target node data comprises property data and structural data and represents a target node of a graph having a plurality of nodes and edges; determining a node degree associated with the target node data; allocating the target node data to the memory space based on the determined node degree.

Abstract: Various embodiments of the present disclosure relate to a computer-implemented method, a system, and a storage medium, where a graph stored in a computing system is logically divided into subgraphs, the subgraphs are stored on different interconnected (or coupled) devices in the computing system, and nodes of the subgraphs include hub nodes connected to adjacent subgraphs. Each device stores attributes and node structure information of the hub nodes of the subgraphs into other devices, and software or hardware prefetch engine on the device prefetches attributes and node structure information associated with a sampled node. A prefetcher on a device interfacing with the interconnected (or coupled) devices may further prefetch attributes and node structure information of nodes of the subgraphs on other devices. A traffic monitor is provided on an interface device to monitor traffic. When the traffic is small, the interface device prefetches node attributes and node structure information.

Abstract: A high-bandwidth memory (HBM) includes a memory and a controller. The controller receives a data write request from a processor external to the HBM and the controller stores an entry in the memory indicating at least one address of data of the data write request and generates an indication that a data bus is available for an operation during a cycle time of the data write request based on the data write request comprising sparse data or data-value similarity. Sparse data includes a predetermined percentage of data values equal to zero, and data-value similarity includes a predetermined amount of spatial value locality of the data values. The predetermined percentage of data values equal to zero of sparse data and the predetermined amount of spatial value locality of the special-value pattern are both based on a predetermined data granularity.

Abstract: A high bandwidth memory system. In some embodiments, the system includes: a memory stack having a plurality of memory dies and eight 128-bit channels; and a logic die, the memory dies being stacked on, and connected to, the logic die; wherein the logic die may be configured to operate a first channel of the 128-bit channels in: a first mode, in which a first 64 bits operate in pseudo-channel mode, and a second 64 bits operate as two 32-bit fine-grain channels, or a second mode, in which the first 64 bits operate as two 32-bit fine-grain channels, and the second 64 bits operate as two 32-bit fine-grain channels.

Abstract: The present disclosure relates to an accelerator for systolic array-friendly data placement. The accelerator may include: a systolic array comprising a plurality of operation units, wherein the systolic array is configured to receive staged input data and perform operations using the staged input to generate staged output data, the staged output data comprising a number of segments; a controller configured to execute one or more instructions to generate a pattern generation signal; a data mask generator; and a memory configured to store the staged output data using the generated masks. The data mask generator may include circuitry configured to: receive the pattern generation signal from the controller, and, based on the received signal, generate a mask corresponding to each segment of the staged output data.

Abstract: A memory module that includes a non-volatile memory and an asynchronous memory interface to interface with a memory controller is presented. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: The presented systems enable efficient and effective network communications. The presented systems enable efficient and effective network communications. In one embodiment a memory device includes a memory module, including a plurality of memory chips configured to store information; and an inter-chip network (ICN)/shared smart memory extension (SMX) memory interface controller (ICN/SMX memory interface controller) configured to interface between the memory module and an inter-chip network (ICN), wherein the ICN is configured to communicatively couple the memory device to a parallel processing unit (PPU). In one exemplary implementation, the ICN/SMX memory controller includes a plurality of package buffers, an ICN physical layer interface, a PRC/MAC interface, and a switch. The memory device and be a memory card including memory module (e.g., DDR DIMM, etc.).

Abstract: An embodiment of the present disclosure relates to a graph node sampling system and a computer-implemented method, where structure information of nodes in a graph neural network is stored in a set of data structures, and attribute data of the nodes is stored in another set of data structures. Node sampling may be performed by a sampling unit in a solid state drive. A node sampling unit selects, reads, and collects attribute data of a sampled node and a neighboring node of the sampled node, and transfers the data to a main memory. The method and system according to the embodiments of the present disclosure can save bandwidth consumed by node sampling in large applications such as a graph neural network.

Abstract: An adaptive matrix multiplier. In some embodiments, the matrix multiplier includes a first multiplying unit a second multiplying unit, a memory load circuit, and an outer buffer circuit. The first multiplying unit includes a first inner buffer circuit and a second inner buffer circuit, and the second multiplying unit includes a first inner buffer circuit and a second inner buffer circuit. The memory load circuit is configured to load data from memory, in a single burst of a burst memory access mode, into the first inner buffer circuit of the first multiplying unit; and into the first inner buffer circuit of the second multiplying unit.

Abstract: A high-bandwidth memory (HBM) includes a memory and a controller. The controller receives a data write request from a processor external to the HBM and the controller stores an entry in the memory indicating at least one address of data of the data write request and generates an indication that a data bus is available for an operation during a cycle time of the data write request based on the data write request comprising sparse data or data-value similarity. Sparse data includes a predetermined percentage of data values equal to zero, and data-value similarity includes a predetermined amount of spatial value locality of the data values. The predetermined percentage of data values equal to zero of sparse data and the predetermined amount of spatial value locality of the special-value pattern are both based on a predetermined data granularity.

Abstract: A chip or integrated circuit includes a layer that includes a first device and a second device. A scribe line is located between the first device and the second device and separates the first device from the second device. An electrically conductive connection traverses the scribe line and is coupled to the first device and the second device, thus connecting the first and second devices.

Abstract: A processing element/unit can include a plurality of networks, a plurality of cores, crossbar interconnects, a plurality of memory controllers and local memory on an integrated circuit (IC) chip. The plurality of cores can be coupled together by the plurality of networks on chip. The crossbar interconnects can couple the networks of cores to the plurality of memory controllers. The plurality of memory controllers can be configured to access data stored in off-chip memory. The local memory can be configured to cache portions of the accessed data. The local memory can be directly accessible by the network of processing cores, or can be distributed across the plurality of memory controllers. The memory controllers can be narrow channel (NC) memory controllers having widths of 4, 8, 12, 16 or a multiple of 4 bits.

Abstract: A dynamic bias coherency configuration engine can include control logic, a host threshold register, and device threshold register and a plurality of memory region monitoring units. The memory region monitoring units can include a starting page number register, an ending page number register, a host access register and a device access register. The memory region monitoring units can be utilized by dynamic bias coherency configuration engine to configure corresponding portions of a memory space in a device bias mode or a host bias mode.

Abstract: A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.