Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

Abstract: A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.

Abstract: A memory device can include an interface comprising a plurality of control and address connections and at least one set of data connections; memory circuits comprising a plurality of storage locations randomly accessible for read and write operations in response to an address value received on the address connections; and accelerator circuits coupled to the memory circuits and configured to perform at least one predetermined operation on data stored in the memory device to generate modified data for storage within the memory circuits in response to at least one command received on the interface; wherein the at least one command is supplemental to read and write commands executable by the memory device.

Abstract: A semiconductor memory cell comprising an electrically floating body having two stable states is disclosed. A method of operating the memory cell is disclosed.

Abstract: A system, comprising: a plurality of modules, each module comprising a plurality of integrated circuits devices coupled to a module bus and a channel interface that communicates with a memory controller, at least a first module having a portion of its total module address space composed of first type memory cells having a first maximum access speed, and at least a second module having a portion of its total module address space composed of second type memory cells having a second maximum access speed slower than the first access speed.

Abstract: A memory device can include a plurality of banks, each bank including memory locations accessible by different access circuits; at least a first address port configured to receive addresses on falling and rising edges of a timing clock, each address corresponding to locations in different banks; and at least two read/write data ports configured to receive write data for storage in one of the banks, and output read data from one of the banks.

Abstract: An integrated circuit device may include a first integrated circuit (IC) portion having a memory array that stores data units as storage locations and burst access circuitry that sequentially accesses N relates storage locations within the memory array, where N>1; and a second IC portion comprising a plurality of burst access registers coupled to the burst access circuitry, each burst access register having register locations to store at least N data units, and being coupled to a corresponding port by a single data unit access path.

Abstract: A first-in-first-out (FIFO) memory device may include a plurality of memory locations configurable into M input queues comprising sequences of input data values and N output queues for storing sequences of output data values, wherein N is not equal to M.

Abstract: A memory apparatus may include one or more cache memory integrated circuit (ICs), each of which may have compare circuitry that compares a received address with stored compare values, a cache memory that provides cached data in response to the compare circuitry, a controller interface having at least address and control signal input terminals, and a module output connection having at least address and control signal output terminals corresponding to the address and control signal input terminals.

Abstract: An integrated circuit (IC) can include M memory banks, where M is greater than 2, and each memory bank is separately accessible according to a received address value; N channels, where N is greater than 2, and each channel includes its own a data connections, address connections, and control input connections for executing a read or write access to one of the memory banks in synchronism with a clock signal; and a controller subsystem configured to control accesses between the channels and the memory banks, including up to an access on every channel on consecutive cycles of the clock signal.

Abstract: An integrated circuit (IC) device can include a static random access memory (SRAM) section comprising a plurality of memory banks; and an interface comprising physical connections for more than eight memory channels, the connections for each memory channel including an address section including connections for SRAM control inputs and a complete address to access the memory banks, and a data section including data inputs and outputs (data IOs) to transfer data for one memory bank.

Abstract: An integrated circuit (IC) device can include a static random access memory (SRAM) section comprising a plurality of memory banks; and an interface comprising physical connections for more than eight memory channels, the connections for each memory channel including an address section including connections for SRAM control inputs and a complete address to access the memory banks, and a data section including data inputs and outputs (data IOs) to transfer data for one memory bank.

Abstract: An integrated circuit (IC) can include M memory banks, where M is greater than 2, and each memory bank is separately accessible according to a received address value; N channels, where N is greater than 2, and each channel includes its own a data connections, address connections, and control input connections for executing a read or write access to one of the memory banks in synchronism with a clock signal; and a controller subsystem configured to control accesses between the channels and the memory banks, including up to an access on every channel on consecutive cycles of the clock signal.

Abstract: A memory device can include a memory array configured to store a first plurality of bits and a second plurality of bits. The memory device may include an address port configured to receive at least a portion of a first address associated with a first command during a first clock cycle, and at least a portion of a second address associated with a second command during the first clock cycle. The memory device may include a plurality of data ports that includes a first data port configured to access the first plurality of bits in response to the receiving of the at least a portion of the first address during the first clock cycle, and a second data port configured to access the second plurality of bits in response to the receiving of the at least a portion of the second address during the first clock cycle.

Abstract: A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.

Abstract: A system, comprising: a plurality of modules, each module comprising a plurality of integrated circuits devices coupled to a module bus and a channel interface that communicates with a memory controller, at least a first module having a portion of its total module address space composed of first type memory cells having a first maximum access speed, and at least a second module having a portion of its total module address space composed of second type memory cells having a second maximum access speed slower than the first access speed.

Abstract: A system, comprising: a plurality of modules, each module comprising a plurality of integrated circuits devices coupled to a module bus and a channel interface that communicates with a memory controller, at least a first module having a portion of its total module address space composed of first type memory cells having a first maximum access speed, and at least a second module having a portion of its total module address space composed of second type memory cells having a second maximum access speed slower than the first access speed.

Abstract: A method of mapping logical block select signals to physical blocks can include receiving at least one signal for each of n+1 logical blocks, where n is an integer greater than one, that each map to one of m+1 physical blocks, where n<m. The method also includes mapping the at least one signal for each logical block to physical block from a corresponding a set of r+1 physical blocks, each set of r+1 physical blocks being different from one another.

Abstract: A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.

Abstract: An integrated circuit device may include a first integrated circuit (IC) portion having a single memory port to access at least one memory array, the single port including a first set of address, control and data paths; and a second IC portion comprising at least a first memory port and a second memory port for providing access to the memory locations of the first IC portion through the single port of the first IC portion.