Abstract: A memory device can include a plurality of double data rate data (DDR) ports, each configured to receive write data and output read data on a same set of data lines independently and concurrently in synchronism with at least a first clock signal; an address port configured to receive address values on consecutive, different transitions of a second clock, each address value corresponding to an access on a different one of the data ports; and a memory array section comprising a plurality of banks, each bank providing pipelined access to storage locations therein.

Abstract: A memory apparatus may include one or more cache memory integrated circuit (ICs), each of which may have compare circuitry that compares a received address with stored compare values, a cache memory that provides cached data in response to the compare circuitry, a controller interface having at least address and control signal input terminals, and a module output connection having at least address and control signal output terminals corresponding to the address and control signal input terminals.

Abstract: A memory device can include a random access memory array configured to store data values; a plurality of bi-directional ports, configured to transfer data values into and out of the memory device on rising and falling transitions of at least one access clock signal; and at least one address bus configured to receive at least a portion of address values to random access locations on rising and falling transitions a timing clock signal having the same frequency as the access clock signal.

Abstract: A system for transferring data files between a host device and a secondary device can include a bridge device forming at least a portion of the secondary device. The bridge device can have a de-multiplex (de-MUX) data path with an input coupled to a host interface (I/F), a first output coupled to a storage I/F and a second output coupled to a processor I/F. A controller circuit can have control inputs coupled to receive configuration commands from the processor I/F and control outputs coupled to control terminals of the de-MUX data path. The controller circuit enables and maintaining a data path between the host I/F and the first output of the de-MUX data path for a predetermined number of data transfers in response to at least a first configuration data input.

Abstract: A method of mapping logical block select signals to physical blocks can include receiving at least one signal for each of n+1 logical blocks, where n is an integer greater than one, that each map to one of m+1 physical blocks, where n<m. The method also includes mapping the at least one signal for each logical block to physical block from a corresponding a set of r+1 physical blocks, each set of r+1 physical blocks being different from one another.

Abstract: A memory device can include a plurality of double data rate data (DDR) ports, each configured to receive write data and output read data on a same set of data lines independently and concurrently in synchronism with at least a first clock signal; an address port configured to receive address values on consecutive, different transitions of a second clock, each address value corresponding to an access on a different one of the data ports; and a memory array section comprising a plurality of banks, each bank providing pipelined access to storage locations therein.

Abstract: A method of mapping logical block select signals to physical blocks can include receiving at least one signal for each of n+1 logical blocks, where n is an integer greater than one, that each map to one of m+1 physical blocks, where n<m. The method also includes mapping the at least one signal for each logical block to physical block from a corresponding a set of r+1 physical blocks, each set of r+1 physical blocks being different from one another.

Abstract: A method may include comparing a first content addressable memory (“CAM”) entry with a first key value to generate a first comparison result; comparing each of multiple second CAM entries with a second key value to generate multiple second comparison results; and generating a match signal if the first key value matches the first CAM entry and the second key value matches at least one of the multiple second CAM entries.

Abstract: A memory device can include a plurality of banks, each bank including memory locations accessible by different access circuits; at least a first address port configured to receive addresses on falling and rising edges of a timing clock, each address corresponding to locations in different banks; and at least two read/write data ports configured to receive write data for storage in one of the banks, and output read data from one of the banks.

Abstract: A user application is generated in response to user input, wherein the user application is described in a user application description. Processing device code is generated for a targeted processing device based at least in part on the user application description without user intervention, wherein the processing device code includes a system layer, wherein functionality of the system layer is independent of the targeted processing device.

Abstract: A disclosed circuit includes circuitry for coupling to a volatile memory, circuitry for coupling to a nonvolatile NAND flash memory, and circuitry that: (i) receives a volatile memory request from a processor and satisfies the volatile memory request by accessing the volatile memory, and (ii) receives a nonvolatile NOR flash memory read request from the processor and satisfies the NOR read request by accessing both the NAND flash memory and the volatile memory. The circuit may also include circuitry that receives a volatile memory request from another processor and satisfies the volatile memory request from the other processor by accessing the volatile memory, and circuitry that receives a NAND flash memory read request from the other processor and satisfies the NAND read request by accessing the NAND flash memory. Multiprocessor systems including the circuit are described, as is a method for satisfying a NOR flash memory read request.

Abstract: An integrated circuit bridge device can include a first interface circuit coupled to a buffer circuit and a configurable in response to configuration information to receive command information, address information, and data values on a same multi-bit input/output (I/O) bus. A second interface circuit can be coupled to the buffer circuit and configured to communicate according to a first communication protocol different from that executable by the first interface circuit. In addition, a controller circuit formed in the same substrate as the first and second interface circuits can be configured to enable data transfers between the first interface circuit and the second interface circuits via the buffer circuit.

Abstract: A ternary content addressable memory (TCAM) cell circuit formed in a TCAM memory cell array having cells arranged in rows and columns can include a first storage circuit with first and second data path, a second storage circuit with a third and fourth data path, and a compare circuit. No more than four conductive lines in a column wise direction have a direct electrical connection to the TCAM cell. Such conductive lines can include a first bit line coupled to the first data path and the third data path and a second bit line coupled to the second data path and the fourth data path.

Abstract: A disclosed circuit includes circuitry for coupling to a volatile memory, circuitry for coupling to a nonvolatile NAND flash memory, and circuitry that: (i) receives a volatile memory request from a processor and satisfies the volatile memory request by accessing the volatile memory, and (ii) receives a nonvolatile NOR flash memory read request from the processor and satisfies the NOR read request by accessing both the NAND flash memory and the volatile memory. The circuit may also include circuitry that receives a volatile memory request from another processor and satisfies the volatile memory request from the other processor by accessing the volatile memory, and circuitry that receives a NAND flash memory read request from the other processor and satisfies the NAND read request by accessing the NAND flash memory. Multiprocessor systems including the circuit are described, as is a method for satisfying a NOR flash memory read request.

Abstract: A system, comprising: a plurality of modules, each module comprising a plurality of integrated circuits devices coupled to a module bus and a channel interface that communicates with a memory controller, at least a first module having a portion of its total module address space composed of first type memory cells having a first maximum access speed, and at least a second module having a portion of its total module address space composed of second type memory cells having a second maximum access speed slower than the first access speed.

Abstract: A method and circuit to implement a match against range rule functionality. A first rule entry and a second rule entry are stored. The first rule entry includes at least two consecutive identical bits. The first rule entry represents a numerical range. A first field of a binary key is compared with the first rule entry to determine whether any of the bits of the first field are not identical. A logical result of the comparison between the first field and the first rule entry is inverted to generate a first comparison result. A second field of the binary key is compared with a second rule entry to generate a second comparison result. The first comparison result is then logically ANDed with the second comparison result to determine whether the binary key falls within the numerical range represented by the first rule entry and matches the second rule entry.

Abstract: A method and apparatus to reduce the number of rule entries used to implement ranging matching in a Content Addressable Memory (“CAM”) array. A first CAM entry is stored in a single CAM cell of an array of CAM cells. The first CAM entry is compared with a first key entry of the CAM array to generate a first comparison result. Each of multiple second CAM entries is stored in corresponding multiple CAM cells of the array of CAM cells. The multiple second CAM entries are compared with a second key entry to generate multiple second comparison results. A match signal is generated by the CAM array if the first key entry matches the first CAM entry and the second key entry matches one of the multiple second CAM entries.

Abstract: A content addressable memory (CAM) device can include a plurality of CAM cells arranged in rows and columns to form multi-byte words. Each CAM cell can include a comparator circuit and one or more data storing circuits. Each comparator circuit can have one or more charge transfer paths arranged between a match line and a first voltage source node. Each data storing circuit can include a write circuit that provides a controllable impedance path between one or more charge transfer paths and a data storage node of the data storing circuit.

Abstract: An integrated circuit device may include a first integrated circuit (IC) portion having a single memory port to access at least one memory array, the single port including a first set of address, control and data paths; and a second IC portion comprising at least a first memory port and a second memory port for providing access to the memory locations of the first IC portion through the single port of the first IC portion.

Abstract: An integrated circuit device may include a first integrated circuit (IC) portion having a single memory port to access at least one memory array, the single port including a first set of address, control and data paths; and a second IC portion comprising at least a first memory port and a second memory port for providing access to the memory locations of the first IC portion through the single port of the first IC portion.