Abstract: A machine learning power consumption model and process are provided for determining power consumption of computing environment resources in handling requests of an application. The process includes training the machine learning power consumption model to estimate power consumption of computing environment resources in handling requests. The training uses a training dataset derived from historical request-related data, and the training dataset includes request-related data and resource power consumption data. In addition, the process includes analyzing the requests. The analyzing includes, for a particular request of the requests, obtaining a common pattern of resource use and collecting real-time trace metrics to facilitate allocating resource use to the particular request.

Abstract: A method of forming source/drain regions of semiconductor devices is disclosed. The method includes forming a fin structure on a substrate, forming a polysilicon structure on the fin structure, removing a portion of the fin structure adjacent to the polysilicon structure to form an opening, and forming a S/D region in the opening. The forming the S/D region includes exposing the fin structure in the opening to a first flow rate of a precursor gas during a first phase of a gas flow cycle, a second flow rate of the precursor gas during a second phase of the gas flow cycle. The exposing the fin structure in the opening to the precursor gas, the etching gas, and the plasma is performed in an in-situ process.

Abstract: The present invention relates to a method for preparing a class of novel CDK12/13 covalent inhibitors or a pharmaceutical composition thereof, and use thereof. The class of novel CDK12/13 covalent inhibitors of the present invention have a structure shown in formula (I). Such compounds can serve as protein kinase inhibitors, can effectively and highly selectively inhibit the CDK12/13 protein kinase activity, and can inhibit the proliferation, migration, and invasion of various tumor cells.

Abstract: A method for spring ploughing and land preparation in saline-sodic paddy fields with thawed water puddling and an application thereof are provided, relating to the technical field of spring ploughing and land preparation in saline-sodic paddy fields. The method includes the following steps: harvesting rice with low stubble left; removing straws from the paddy fields: removing straws after harvesting from fields; ploughing; fertilizing; irrigating for thawing; and drying.

Abstract: Provided is a biosensor. The biosensor includes: a base substrate; a plurality of detection units disposed on a side of the base substrate, wherein each of the plurality of detection units includes a gate; a first drive signal line disposed on the side of the base substrate and electrically connected to the gate; and a cover plate fixedly connected to the side of the base substrate, wherein a plurality of recesses are defined in a side, proximal to the base substrate, of the cover plate.

Abstract: At least one device can be classified based on user activity. At least one telemetry variable with respect to time may be received for the at least one device. The at least one telemetry variable with respect to time may be used to determine an activity model for the at least one device. Based on the activity model, a probability of the at least one device belonging to a profile or to a type of user may be determined. Based on the type of user of the at least one device, a setting associated with the at least one device may be changed.

Abstract: In implementations of systems for estimating three-dimensional trajectories of physical objects, a computing device implements a three-dimensional trajectory system to receive radar data describing millimeter wavelength radio waves directed within a physical environment using beamforming and reflected from physical objects in the physical environment. The three-dimensional trajectory system generates a cloud of three-dimensional points based on the radar, each of the three-dimensional points corresponds to a reflected millimeter wavelength radio wave within a sliding temporal window. The three-dimensional points are grouped into at least one group based on Euclidean distances between the three-dimensional points within the cloud. The three-dimensional trajectory system generates an indication of a three-dimensional trajectory of a physical object corresponding to the at least one group using a Kalman filter to track a position and a velocity a centroid of the at least one group in three-dimensions.

Abstract: A semiconductor package is provided. The semiconductor package includes: semiconductor dies, separated from one another, and including die I/Os at their active sides; and a redistribution structure, disposed at the active sides of the semiconductor dies and connected to the die I/Os, wherein the redistribution structure includes first and second routing layers sequentially arranged along a direction away from the die I/Os, the first routing layer includes a ground plane and first signal lines laterally surrounded by and isolated from the first ground plane, the first signal lines connect to the die I/Os and rout the die I/Os from a central region to a peripheral region of the redistribution structure, the second routing layer includes second signal lines and ground lines, and the second signal lines and the ground lines respectively extend from a location in the peripheral region to another location in the peripheral region through the central region.

Abstract: The present application provides bicyclic compounds that modulate the activity of diacylglycerol kinase (DGK), which are useful in the treatment of various diseases, including cancer.

Abstract: An example gesture detection method includes detecting at a first time a first touch on a touch panel, where the first touch covers a first area of the touch panel, and then determining whether the first touch is within a track region that surrounds a fingerprint sensing region. The method includes determining whether the first touch is within the fingerprint sensing region, the fingerprint sensing region including a sensing surface of a fingerprint sensor. The method includes determining a first fraction of the fingerprint sensing region covered by the first touch and determining whether the first fraction exceeds a first threshold. The first threshold is a majority of the fingerprint sensing region. The method includes determining a second fraction of all of the first area that is within the fingerprint sensing region and determining whether the second fraction exceeds a second threshold, where the second threshold is a fraction indicative of a majority of an area associated with the corresponding touch.

Abstract: An example gesture detection method includes detecting at a first time a first touch on a touch panel, where the first touch covers a first area of the touch panel, and then determining whether the first touch is within a track region that surrounds a fingerprint sensing region. The method includes determining whether the first touch is within the fingerprint sensing region, the fingerprint sensing region including a sensing surface of a fingerprint sensor. The method includes determining a first fraction of the fingerprint sensing region covered by the first touch and determining whether the first fraction exceeds a first threshold. The first threshold is a majority of the fingerprint sensing region. The method includes determining a second fraction of all of the first area that is within the fingerprint sensing region and determining whether the second fraction exceeds a second threshold, where the second threshold is a fraction indicative of a majority of an area associated with the corresponding touch.

Abstract: A semiconductor package includes a circuit board structure, a first redistribution layer structure and first bonding elements. The circuit board structure includes outermost first conductive patterns and a first mask layer adjacent to the outermost first conductive patterns. The first redistribution layer structure is disposed over the circuit board structure. The first bonding elements are disposed between and electrically connected to the first redistribution layer structure and the outermost first conductive patterns of the circuit board structure. In some embodiments, at least one of the first bonding elements covers a top and a sidewall of the corresponding outermost first conductive pattern.

Abstract: This application provides a hinge mechanism and an electronic device. One example hinge mechanism includes a base, and a first rotating assembly and a second rotating assembly that are respectively disposed on two sides of the base. When the first rotating assembly and the second rotating assembly rotate toward each other, a length of the hinge mechanism may be increased; or when the first rotating assembly and the second rotating assembly rotate opposite to each other, a length of the hinge mechanism may be shortened, and a support surface for supporting a flexible display can be formed.

Abstract: Disclosed are compounds which inhibit the activity of anti-apoptotic Bcl-2 proteins, compositions containing the compounds and methods of treating diseases during which is expressed anti-apoptotic Bcl-2 protein.

Abstract: A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.

Abstract: The invention relates to a composition for the immediate termination of a free-radical polymerization, the use thereof for the stabilization of free-radically polymerizable monomers against free-radical polymerization and a method for the immediate termination of free-radical polymerizations.

Abstract: A semiconductor package is provided. The semiconductor package includes: semiconductor dies, separated from one another, and including die I/Os at their active sides; and a redistribution structure, disposed at the active sides of the semiconductor dies and connected to the die I/Os, wherein the redistribution structure includes first and second routing layers sequentially arranged along a direction away from the die I/Os, the first routing layer includes a ground plane and first signal lines laterally surrounded by and isolated from the first ground plane, the first signal lines connect to the die I/Os and rout the die I/Os from a central region to a peripheral region of the redistribution structure, the second routing layer includes second signal lines and ground lines, and the second signal lines and the ground lines respectively extend from a location in the peripheral region to another location in the peripheral region through the central region.

Abstract: A method includes of fabricating a heterostructure includes growing epitaxially, in a growth chamber, a first semiconductor layer of the heterostructure, the first semiconductor layer comprising a III-nitride semiconductor material, the first semiconductor layer being supported by a substrate, and, after growing the first semiconductor layer, growing epitaxially, in the growth chamber, a second semiconductor layer of the heterostructure such that the second semiconductor layer is supported by the first semiconductor layer, the second semiconductor layer comprising a quaternary or higher order III-nitride alloy.

Abstract: A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.

Abstract: A device includes a substrate and a semiconductor heterostructure supported by the substrate. The semiconductor heterostructure includes a first semiconductor layer supported by the substrate and including a first III-nitride semiconductor material, and a second semiconductor layer supported by the first semiconductor layer and including a second III-nitride semiconductor material. The second III-nitride semiconductor material includes scandium. The first and second semiconductor layers are nitrogen-polar.