Abstract: A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×108 cm?2.

Abstract: A storage unit for an energy storage system is provided with an energy storage container for storing gaseous carbon dioxide and liquid carbon dioxide, a condenser connected to the energy storage container and used for condensing gaseous carbon dioxide into liquid carbon dioxide and an energy-storage pressure-maintaining flow path forming a closed-loop connection with the energy storage container and the condenser; and in an energy storage stage of the energy storage system and in an interval time period of energy storage and energy release, gaseous carbon dioxide in the energy storage container can flow into the condenser via the energy-storage pressure-maintaining flow path, to be condensed into liquid carbon dioxide, and then flow back to the energy storage container, so as to stabilize, in the energy storage stage, the pressure of the energy storage container in a design pressure range.

Abstract: A device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes an alloy layer including an alloy of a III-nitride material and a III-nitride semiconductor layer adjacent the alloy layer. The alloy includes yttrium. A heterointerface between the alloy layer and the III-nitride semiconductor layer has a Type-I band alignment.

Abstract: A preparation method of a doped manganese phosphate precursor includes steps as follows. Manganous salt and a doping metal M salt are dissolved in an acidic solution to obtain a dissolved solution, and then the dissolved solution is mixed with a phosphoric acid to form a mixed solution. The mixed solution is heated at a heating temperature in a range of 150° C. to 250° C. to obtain a heated solution, then a high-valent manganese salt is added into the heated solution to perform a reaction. After the reaction is complete, a precursor slurry is obtained. The precursor slurry is washed, filtered, and dried to yield the doped manganese phosphate precursor. The preparation method is simple, easy to operate, highly efficient, environmentally friendly, and low-cost. The precursor has high phase purity, controllable particle size ranging from the nanoscale to the microscale, good dispersibility, and high crystallinity.

Abstract: A device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a III-nitride layer and a ferroelectric layer supported by the III-nitride layer. The ferroelectric layer includes a quaternary III-nitride alloy. The quaternary III-nitride alloy includes a Group IIIB element. The ferroelectric layer has a lattice constant greater than a lattice constant of gallium nitride (GaN).

Abstract: A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×108 cm?2.

Abstract: A preparation method of a doped manganese phosphate precursor includes steps as follows. Manganous salt and a doping metal M salt are dissolved in an acidic solution to obtain a dissolved solution, and then the dissolved solution is mixed with a phosphoric acid to form a mixed solution. The mixed solution is heated at a heating temperature in a range of 150° C. to 250° C. to obtain a heated solution, then a high-valent manganese salt is added into the heated solution to perform a reaction. After the reaction is complete, a precursor slurry is obtained. The precursor slurry is washed, filtered, and dried to yield the doped manganese phosphate precursor. The preparation method is simple, easy to operate, highly efficient, environmentally friendly, and low-cost. The precursor has high phase purity, controllable particle size ranging from the nanoscale to the microscale, good dispersibility, and high crystallinity.

Abstract: Provided are a straw returning method through thawing and wet puddling for saline-sodic paddy fields and an application thereof, relating to the technical field of returning straws to fields in saline-sodic paddy fields. According to the disclosure, regional characteristics are fully considered, “thawing” is taken as the core and combined with wet puddling.

Abstract: A manganese iron oxide and a preparation method thereof, and a preparation method for lithium manganese iron phosphate cathode materials are provided. The preparation method for the manganese iron oxide includes the following steps: Configuring a mixed salt solution containing the first complexing agent, antioxidant, manganese salt, and iron salt; mixing the mixed salt solution, the second complexing agent, oxidant and deionized water to undergo a complexation-oxidation-precipitation reaction, filtering, washing, and drying a precipitate obtained after the reaction to obtain a manganese iron oxide. The preparation methods for the manganese iron oxide and lithium manganese iron phosphate cathode materials are simple, the physical and chemical indexes of the product are controllable, the raw materials are easy to obtain, the cost is low, the reaction conditions are mild, the corrosion resistance requirements of the equipment are not high, the technical difficulty is low, and it is easy to scale production.

Abstract: A manganese iron oxide and a preparation method thereof, and a preparation method for lithium manganese iron phosphate cathode materials are provided. The preparation method for the manganese iron oxide includes the following steps: Configuring a mixed salt solution containing the first complexing agent, antioxidant, manganese salt, and iron salt; mixing the mixed salt solution, the second complexing agent, oxidant and deionized water to undergo a complexation-oxidation-precipitation reaction, filtering, washing, and drying a precipitate obtained after the reaction to obtain a manganese iron oxide. The preparation methods for the manganese iron oxide and lithium manganese iron phosphate cathode materials are simple, the physical and chemical indexes of the product are controllable, the raw materials are easy to obtain, the cost is low, the reaction conditions are mild, the corrosion resistance requirements of the equipment are not high, the technical difficulty is low, and it is easy to scale production.

Abstract: A method of fabricating a heterostructure includes forming a layered material structure such that the layered material structure has an edge, and growing epitaxially a nanostructure of layered material laterally from the edge of the layered material structure such that an inplane interface between the layered material structure and the nanostructure is defined. Growing the nanostructure is implemented at a growth temperature sufficiently near a decomposition temperature of the layered material such that a nucleation interface of the nanostructure has a single atomic configuration.

Abstract: A device includes a substrate, a heterostructure supported by the substrate, the heterostructure including a semiconductor layer supported by the substrate, and a ferroelectric III-nitride alloy layer supported by the semiconductor layer, the ferroelectric III-nitride alloy layer including a Group IIIB element, and first and second contacts in electrical communication with the ferroelectric III-nitride alloy layer and the semiconductor layer, respectively, such that a polarity of a poling voltage applied across the first and second contacts establishes a state of ferroelectric polarization of the ferroelectric III-nitride alloy layer

Abstract: Embodiments of this application provide an interference processing method and a device, to reduce interference from a cellular network to Wi-Fi signals by reducing uplink transmit power of the cellular network in the field of communications technologies.

Abstract: A method of fabricating a heterostructure includes growing epitaxially, in a growth chamber, a first semiconductor layer of the heterostructure, the first semiconductor layer including a first III-nitride semiconductor material, the first semiconductor layer being supported by a substrate, after growing the first semiconductor layer, growing epitaxially, in the growth chamber, a second semiconductor layer of the heterostructure such that the second semiconductor layer is supported by the first semiconductor layer, the second semiconductor layer including a second III-nitride semiconductor material, and between growing the first semiconductor layer and growing the second semiconductor layer, controlling an extent to which a eutectic layer disposed on the first semiconductor layer is consumed to control a lattice polarity of the second semiconductor layer

Abstract: A method for spring ploughing and land preparation in saline-sodic paddy fields with thawed water puddling and an application thereof are provided, relating to the technical field of spring ploughing and land preparation in saline-sodic paddy fields. The method includes the following steps: harvesting rice with low stubble left; removing straws from the paddy fields: removing straws after harvesting from fields; ploughing; fertilizing; irrigating for thawing; and drying.

Abstract: The invention relates to a composition for the immediate termination of a free-radical polymerization, the use thereof for the stabilization of free-radically polymerizable monomers against free-radical polymerization and a method for the immediate termination of free-radical polymerizations.

Abstract: A method includes of fabricating a heterostructure includes growing epitaxially, in a growth chamber, a first semiconductor layer of the heterostructure, the first semiconductor layer comprising a III-nitride semiconductor material, the first semiconductor layer being supported by a substrate, and, after growing the first semiconductor layer, growing epitaxially, in the growth chamber, a second semiconductor layer of the heterostructure such that the second semiconductor layer is supported by the first semiconductor layer, the second semiconductor layer comprising a quaternary or higher order III-nitride alloy.

Abstract: A device includes a substrate and a semiconductor heterostructure supported by the substrate. The semiconductor heterostructure includes a first semiconductor layer supported by the substrate and including a first III-nitride semiconductor material, and a second semiconductor layer supported by the first semiconductor layer and including a second III-nitride semiconductor material. The second III-nitride semiconductor material includes scandium. The first and second semiconductor layers are nitrogen-polar.

Abstract: A method of providing a geographically distributed live mixed-reality meeting is described. The method comprises receiving, from a camera at a first endpoint, a live video stream; generating an mixed reality view incorporating the received video stream; rendering the mixed reality view at a display at the first endpoint and transmitting the mixed reality view to at least one other geographically distant endpoint; receiving data defining a bounding area; calculating a real world anchor for the bounding area using the data defining the bounding area; rendering the bounding area in the mixed reality view at a real world position determined using the real world anchor; and applying different rule sets to content objects placed into the mixed reality view by users dependent upon the position of the content objects relative to the bounding area in real world space.