Abstract: An optoelectronic device includes a first electrode, a ferroelectric semiconductor layer supported by the first electrode, and a second electrode supported by the ferroelectric semiconductor layer, the second electrode being configured to allow the ferroelectric semiconductor layer to be illuminated. The ferroelectric semiconductor layer comprises a III-nitride alloy, the III-nitride alloy including a group IIIB element.

Abstract: An adaptive critic control algorithm integrating knowledge transfer for a wastewater treatment process is provided. This algorithm is used to achieve precise tracking of the dissolved oxygen concentration to the set value during the wastewater treatment process. When realizing the optimal control of a wastewater treatment system with an unknown model, the direct control strategy in the conventional adaptive critic control (ACC) algorithm is often sensitive to system disturbances, which may lead to a sharp decline in control performance. The present invention takes both knowledge transfer and incremental control into consideration. First, the anti-interference performance is effectively improved by optimizing the control strategy of the conventional ACC algorithm into an incremental form. Second, by leveraging the historical operation data of the system, knowledge transfer is implemented among different control methods.

Abstract: A device includes a substrate and a ferroelectric layer supported by the substrate. The ferroelectric layer includes an alloy of a III-nitride material. The alloy includes a Group IIIB element. The substrate includes silicon.

Abstract: A device includes a substrate, a template layer supported by the substrate, a ferroelectric semiconductor layer adjacent to the template layer, the ferroelectric semiconductor layer including an alloy of a III-nitride material and a Group III-B element, and a dielectric layer disposed adjacent to the ferroelectric semiconductor layer and configured to establish a ferroelectric tunneling heterojunction with the ferroelectric semiconductor layer and the template layer. The ferroelectric semiconductor layer and the dielectric layer are configured such that the ferroelectric tunneling heterojunction exhibits a conductance level in accordance with a polarization of the ferroelectric semiconductor layer.

Abstract: A transistor device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a buffer layer supported by the substrate, a channel layer supported by the buffer layer, a barrier layer supported by the channel layer, and a gate dielectric layer supported by the barrier layer. The gate dielectric layer includes a ferroelectric nitride alloy, the ferroelectric nitride alloy including a Group IIIB element.

Abstract: A method of fabricating a heterostructure includes providing a substrate, and implementing a non-sputtered, epitaxial growth procedure at a growth temperature to form a wurtzite structure supported by the substrate. The wurtzite structure includes an alloy of gallium nitride. The non-sputtered, epitaxial growth procedure is configured to incorporate a group IIIB element into the alloy. The wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.

Abstract: A pyrazol-5-ether compound having a structure represented by Formula I, which has a significant effect on preventing and controlling diseases in agriculture and forestry, especially on wheat powdery mildew, cucumber powdery mildew and soybean rust, and has wide application prospects.

Abstract: A control method includes generating, through a processor, route data of a route, instructing the movable object to execute the route data, detecting an execution status of the movable object, in response to detecting that the movable object is in a route recovery state, controlling the movable object in the route recovery state to resume the execution of the route according to a starting position. The starting position includes at least one of a waypoint of the plurality of waypoints before an interruption, a position determined according to a flight position recorded at a time of the interruption, or a user-designated waypoint.

Abstract: A compressed carbon dioxide energy storage system and method combined with an air separation technology are provided. The system includes an air separation assembly, separating air to generate nitrogen, oxygen, carbon dioxide and waste nitrogen; an energy storage assembly, using carbon dioxide as a working medium, compressing carbon dioxide and collecting heat energy and pressure energy generated during compressing the carbon dioxide in off-peak period; an energy release assembly, converting the collected heat energy and pressure energy to electric energy, to supply to the air separation assembly and an electrical device in peak period. The waste nitrogen is used as a heat source for the air separation assembly, the energy storage assembly and the energy release assembly to provide heat energy, and nitrogen/oxygen is used as a cool source for the air separation assembly, the energy storage assembly and the energy release assembly to provide cool energy.

Abstract: This application provides a terminal device and a communication method. The terminal device is in a dual-connectivity network including a long term evolution (LTE) link and a new radio (NR) link, and when the terminal device detects that the terminal device is in a power saving mode, and/or when the terminal device detects that battery power of the terminal device is less than or equal to a first preset value, and/or when the terminal device detects that temperature of a rear cover of the terminal device is greater than or equal to a second preset value, the terminal device releases the NR link, and uses the LTE link for communication.

Abstract: A heterostructure includes a template layer and a ferroelectric semiconductor layer supported by the template layer, the ferroelectric semiconductor layer being single crystalline. The ferroelectric semiconductor layer includes an alloy of a III-nitride material. The alloy includes a Group IIIB element. The ferroelectric semiconductor layer is in contact with the template layer. The ferroelectric semiconductor layer has a thickness less than 100 nm.

Abstract: A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×108 cm?2.

Abstract: A storage unit for an energy storage system is provided with an energy storage container for storing gaseous carbon dioxide and liquid carbon dioxide, a condenser connected to the energy storage container and used for condensing gaseous carbon dioxide into liquid carbon dioxide and an energy-storage pressure-maintaining flow path forming a closed-loop connection with the energy storage container and the condenser; and in an energy storage stage of the energy storage system and in an interval time period of energy storage and energy release, gaseous carbon dioxide in the energy storage container can flow into the condenser via the energy-storage pressure-maintaining flow path, to be condensed into liquid carbon dioxide, and then flow back to the energy storage container, so as to stabilize, in the energy storage stage, the pressure of the energy storage container in a design pressure range.

Abstract: A device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes an alloy layer including an alloy of a III-nitride material and a III-nitride semiconductor layer adjacent the alloy layer. The alloy includes yttrium. A heterointerface between the alloy layer and the III-nitride semiconductor layer has a Type-I band alignment.

Abstract: A preparation method of a doped manganese phosphate precursor includes steps as follows. Manganous salt and a doping metal M salt are dissolved in an acidic solution to obtain a dissolved solution, and then the dissolved solution is mixed with a phosphoric acid to form a mixed solution. The mixed solution is heated at a heating temperature in a range of 150° C. to 250° C. to obtain a heated solution, then a high-valent manganese salt is added into the heated solution to perform a reaction. After the reaction is complete, a precursor slurry is obtained. The precursor slurry is washed, filtered, and dried to yield the doped manganese phosphate precursor. The preparation method is simple, easy to operate, highly efficient, environmentally friendly, and low-cost. The precursor has high phase purity, controllable particle size ranging from the nanoscale to the microscale, good dispersibility, and high crystallinity.

Abstract: A device includes a substrate and a heterostructure supported by the substrate. The heterostructure includes a III-nitride layer and a ferroelectric layer supported by the III-nitride layer. The ferroelectric layer includes a quaternary III-nitride alloy. The quaternary III-nitride alloy includes a Group IIIB element. The ferroelectric layer has a lattice constant greater than a lattice constant of gallium nitride (GaN).

Abstract: A nitride semiconductor substrate (11, 21) includes: a substrate (2); and an AlN-containing film (100, 200) provided above the substrate (2). A thickness of the AlN-containing film (100, 200) is at most 10000 nm, and a threading dislocation density of the AlN-containing film (100, 200) is at most 2×108 cm?2.

Abstract: A preparation method of a doped manganese phosphate precursor includes steps as follows. Manganous salt and a doping metal M salt are dissolved in an acidic solution to obtain a dissolved solution, and then the dissolved solution is mixed with a phosphoric acid to form a mixed solution. The mixed solution is heated at a heating temperature in a range of 150° C. to 250° C. to obtain a heated solution, then a high-valent manganese salt is added into the heated solution to perform a reaction. After the reaction is complete, a precursor slurry is obtained. The precursor slurry is washed, filtered, and dried to yield the doped manganese phosphate precursor. The preparation method is simple, easy to operate, highly efficient, environmentally friendly, and low-cost. The precursor has high phase purity, controllable particle size ranging from the nanoscale to the microscale, good dispersibility, and high crystallinity.

Abstract: Provided are a straw returning method through thawing and wet puddling for saline-sodic paddy fields and an application thereof, relating to the technical field of returning straws to fields in saline-sodic paddy fields. According to the disclosure, regional characteristics are fully considered, “thawing” is taken as the core and combined with wet puddling.