Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: This application relates to a network device transmission bandwidth reduction method and related device for reducing a transmission bandwidth of a network device, thereby reducing power consumption and battery life of terminal devices. In one embodiment, a terminal receives transmission bandwidth reduction configuration information sent by a network device, where the transmission bandwidth reduction configuration information includes a set of transmission bandwidth reduction parameters supported by the network device. In response, the terminal sends a target transmission bandwidth reduction coefficient to the network device, where the target transmission bandwidth reduction coefficient is a transmission bandwidth reduction coefficient of a serving cell expected by the terminal. A serving cell is one or more cells that currently provide services for the terminal.

Abstract: A high-nickel ternary core-shell precursor for a lithium battery, a positive electrode material and a preparation method therefor. The chemical structural formula of the precursor is zNi(C4H7N2O2)2—Nix-zM1yM21-x-y(OH)2, wherein M1 and M2 are two of cobalt, aluminum, and manganese. The preparation method comprises: pumping a prepared metal salt solution, a dimethylglyoxime-ammonia water composite solution, and an ammonia water solution into a reaction kettle, maintaining the pH of a reaction system, and controlling the reaction time to obtain a sphere-like precursor inner core with a structural formula of Ni(C4H7N2O2)2; pumping the metal salt solution and the ammonia water solution, stopping pumping the dimethylglyoxime-ammonia water composite solution, pumping a sodium hydroxide solution to obtain a sphere-like core-shell precursor, washing, drying, sieving and deironing the precursor, mixing with a lithium source, and calcining to prepare the positive electrode material.

Abstract: A control method includes generating, through a processor, route data of a route, instructing the movable object to execute the route data, detecting an execution status of the movable object, in response to detecting that the movable object is in a route recovery state, controlling the movable object in the route recovery state to resume the execution of the route according to a starting position. The starting position includes at least one of a waypoint of the plurality of waypoints before an interruption, a position determined according to a flight position recorded at a time of the interruption, or a user-designated waypoint.

Abstract: The present disclosure relates generally to aromatic derivatives that are inhibitors of FGFR4 and are useful in treating FGFR4-associated diseases or conditions. Compositions containing the compounds of the present disclosure are also provided.

Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: Embodiments provide a method of performing a carrier switch for a device wafer, attaching a second wafer and removing a first wafer. A buffer layer is deposited over the device wafer, buffer layer reducing the topography of the surface of the device wafer. After the carrier switch a film-on-wire layer is removed from the buffer layer and then the buffer layer is at least in part removed.

Abstract: A first polymer layer is formed across a package region and a test region. A first metal pattern is formed in the package region and a first test pattern is simultaneously formed in the test region. The first metal pattern has an upper portion located on the first polymer layer and a lower portion penetrating through the first polymer layer, and the first test pattern is located on the first polymer layer and has a first opening exposing the first polymer layer. A second polymer layer is formed on the first metal pattern in the package region and a second test pattern is simultaneously formed on the first test pattern in the test region. The second polymer layer has a second opening exposing the upper portion of the first metal pattern, and the second test pattern has a third opening greater than the first opening of the first test pattern.

Abstract: A semiconductor structure includes a composite redistribution structure, a first interconnect device and an integrated circuit (IC) package component. The composite redistribution structure includes a first redistribution structure, a second redistribution structure and a third redistribution structure. The second redistribution structure is located between the first redistribution structure and the third redistribution structure. The first interconnect device is embedded in the second redistribution structure. The first interconnect device includes a plurality of metal connectors leveled with a surface of the second redistribution structure and electrically connected to the third redistribution structure. The IC package component is disposed over the third redistribution structure and electrically connected to the first interconnect device via the third redistribution structure.

Abstract: A package structure includes a substrate component, a redistribution structure, a package structure, and a probe head. The substrate component is laterally covered by an insulating encapsulation. The redistribution structure is disposed over the substrate component and the insulating encapsulation and electrically connected with the substrate component at a first side, wherein the redistribution structure comprises: a dielectric layer at a second side opposite to the first side; at least one conductive pad disposed in the dielectric layer, wherein a portion of the at least one conductive pad is exposed by the dielectric layer; and at least one conductive pattern in contact with the portion of the at least one conductive pad, wherein a hardness of the at least one conductive pattern is greater than a hardness of the at least one conductive pad. The probe head is electrically connected with the at least one conductive pattern and the at least one conductive pad.

Abstract: A registration method applied in a terminal device includes sending a first request, where the first request is used to request to register in a first cell, receiving a first message, where the first message is used to indicate that the terminal device is successfully registered in the first cell, when the first message does not carry a first network slice identifier and the terminal device cannot establish a protocol data unit (PDU) session on a first network slice corresponding to the first network slice identifier, sending a second request, where the second request is used to request to register in a second cell, receiving a second message, where the second message carries a second network slice identifier, and establishing the PDU session on a second network slice corresponding to the second network slice identifier.

Abstract: A method of forming an inductor including forming a first redistribution structure on a substrate, forming a first conductive via over and electrically connected to the first redistribution structure, depositing a first magnetic material over a top surface and sidewalls of the first conductive via, coupling a first die and a second die to the first redistribution structure, encapsulating the first die, the second die, and the first conductive via in an encapsulant, and planarizing the encapsulant and the first magnetic material to expose the top surface of the first conductive via while a remaining portion of the first magnetic material remains on sidewalls of the first conductive via, where the first conductive via and the remaining portion of the first magnetic material provide an inductor.

Abstract: A method includes forming an inductor die, which includes forming a metal via over a substrate, forming a magnetic shell encircling the metal via, with the metal via and the magnetic shell collectively forming an inductor, and depositing a dielectric layer around the magnetic shell. The method further includes placing the inductor die over a carrier, encapsulating the inductor die in an encapsulant, forming redistribution lines electrically connecting to the inductor, and bonding a device die to the redistribution lines. The device die is electrically coupled to the inductor through the redistribution lines.

Abstract: A package structure and a manufacturing method thereof are provided. The package structure includes an integrated substrate and a package component. The integrated substrate includes a substrate component laterally covered by an insulating encapsulation, a redistribution structure disposed over the substrate component and the insulating encapsulation, first conductive joints coupling the redistribution structure to the substrate component, and a buffer layer disposed on a lowermost dielectric layer of the redistribution structure and extending downwardly to cover an upper portion of each of the first conductive joints. A lower portion of each of the first conductive joints connected to the upper portion is covered by the insulating encapsulation. The package component disposed over and electrically coupled to the redistribution structure includes a semiconductor die laterally covered by an encapsulant.

Abstract: A semiconductor package includes a semiconductor die, an encapsulant, a first and second dielectric layer, a through via, an extension pad, and a routing via. The semiconductor die includes a contact post. The first dielectric layer extends on the encapsulant. The through via extends through the first dielectric layer and has one end contacting the contact post. The extension pad is disposed on the first dielectric layer, contacting an opposite end of the through via with respect to the contact post. The extension pad has an elongated shape, a first end of the extension pad overlaps with the contact post and the through via, and a second end of the extension pad overlaps with the encapsulant. The second dielectric layer is disposed on the first dielectric layer and the extension pad. The routing via extends through the second dielectric layer to contact the second end of the extension pad.

Abstract: Semiconductor device packages and methods of forming the same are discussed. In an embodiment, a device includes: a redistribution structure comprising an upper dielectric layer and an under-bump metallization; a buffer feature on the under-bump metallization and the upper dielectric layer, the buffer feature covering an edge of the under-bump metallization, the buffer feature bonded to the upper dielectric layer; a reflowable connector extending through the buffer feature, the reflowable connector coupled to the under-bump metallization; an interposer coupled to the reflowable connector; and an encapsulant around the interposer and the reflowable connector, the encapsulant different from the buffer feature.

Abstract: A flight control method includes displaying a user interface configured to receive an operation instruction including coordinates of waypoints, generating route data of a route based on the coordinates of the waypoints, sending the route data to an aircraft to instruct the aircraft to execute the route, recording an interruption point during execution of the route by the aircraft, displaying a plurality of candidate starting points including at least one of the interruption point, a last waypoint of the route before the interruption point, a next waypoint of the route after the interruption point, or a user-designated waypoint, in response to a selection instruction, selecting a target starting point from the plurality of candidate starting points, and controlling the aircraft in an interrupted state to fly to the target starting point and resume the execution of the route from the target starting point.

Abstract: A semiconductor package provided herein includes a package substrate and a semiconductor device. The package substrate includes a redistribution structure, an interconnect structure bonded to the interconnect structure and an insulation material laterally surrounding the interconnect structure, wherein the redistribution structure has a reduced structure and the insulation material fills the reduced structure. The semiconductor device is bonded to the package substrate. In addition, a method of fabricating a semiconductor package is also provided and includes a precut process forming the reduced structure in the redistribution structure of the package substrate.

Abstract: A substrate structure includes a core substrate, a redistribution layer, a plurality of test pads, a first protective coating, at least one conductive pad and a passive device. The redistribution layer is disposed on and electrically connected to the core substrate. The test pads are disposed over the redistribution layer. The first protective coating is coated on the test pads. The conductive pad is d disposed on the redistribution layer aside the plurality of test pads. The passive device is disposed on and electrically connected to the at least one conductive pad.