Abstract: An embodiment interposer may include a plurality of first redistribution layers including first electrical interconnect structures having a first line width and a first line spacing embedded in a first dielectric material, and a plurality of second redistribution layers including second electrical interconnect structures having a second line width and a second line spacing embedded in a second dielectric material such that the second line width is greater than the first line width and such that the second line spacing is greater than the first line spacing. The first dielectric material may be one of polyimide, benzocyclobuten, or polybenzo-bisoxazole and second dielectric material may include an inorganic particulate material dispersed in an epoxy resin. The interposer may further include a protective layer, including the second dielectric material, formed over the first redistribution layers, and a surface layer, including the first dielectric material, formed as part of the second redistribution layers.

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

Abstract: A package structure includes an interposer including a front side and a back side opposite the front side, an upper molded structure on the front side of the interposer and including an upper molding layer and a semiconductor die in the upper molding layer, and a lower molded structure on the back side of the interposer and including a lower molding layer and a substrate portion in the lower molding layer, wherein the substrate portion includes conductive layers electrically coupled to the semiconductor die through the interposer.

Abstract: A method includes forming a photoresist on a base structure, and performing a first light-exposure process on the photoresist using a first lithography mask. In the first light-exposure process, an inner portion of the photoresist is blocked from being exposed, and a peripheral portion of the photoresist is exposed. The peripheral portion encircles the inner portion. A second light-exposure process is performed on the photoresist using a second lithography mask. In the second light-exposure process, the inner portion of the photoresist is exposed, and the peripheral portion of the photoresist is blocked from being exposed. The photoresist is then developed.

Abstract: A method of providing a geographically distributed live mixed-reality meeting is described. The method comprises receiving, from a camera at a first endpoint, a live video stream; generating an mixed reality view incorporating the received video stream; rendering the mixed reality view at a display at the first endpoint and transmitting the mixed reality view to at least one other geographically distant endpoint; receiving data defining a bounding area; calculating a real world anchor for the bounding area using the data defining the bounding area; rendering the bounding area in the mixed reality view at a real world position determined using the real world anchor; and applying different rule sets to content objects placed into the mixed reality view by users dependent upon the position of the content objects relative to the bounding area in real world space.

Abstract: A semiconductor device and a method of making the same are provided. A first die and a second die are placed over a carrier substrate. A first molding material is formed adjacent to the first die and the second die. A first redistribution layer is formed overlying the first molding material. A through via is formed over the first redistribution layer. A package component is on the first redistribution layer next to the copper pillar. The package component includes a second redistribution layer. The package component is positioned so that it overlies both the first die and the second die in part. A second molding material is formed adjacent to the package component and the first copper pillar. A third redistribution layer is formed overlying the second molding material. The second redistribution layer is placed on a substrate and bonded to the substrate.

Abstract: A method of fabricating a heterostructure includes providing a substrate, and implementing a non-sputtered, epitaxial growth procedure at a growth temperature to form a wurtzite structure supported by the substrate. The wurtzite structure includes an alloy of a III-nitride material. The non-sputtered, epitaxial growth procedure is configured to incorporate a group IIIB element into the alloy of the III-nitride material. The growth temperature is at a level such that the wurtzite structure exhibits a breakdown field strength greater than a ferroelectric coercive field strength of the wurtzite structure.

Abstract: An embodiment semiconductor package includes a bare semiconductor chip, a packaged semiconductor chip adjacent the bare semiconductor chip, and a redistribution structure bonded to the bare semiconductor chip and the packaged semiconductor chip. The redistribution structure includes a first redistribution layer having a first thickness; a second redistribution layer having a second thickness; and a third redistribution layer between the first redistribution layer and the second redistribution layer. The third redistribution layer has a third thickness greater than the first thickness and the second thickness. The package further includes an underfill disposed between the bare semiconductor chip and the redistribution structure and a molding compound encapsulating the bare semiconductor chip, the packaged semiconductor chip, and the underfill.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: This application relates to a network device transmission bandwidth reduction method and related device for reducing a transmission bandwidth of a network device, thereby reducing power consumption and battery life of terminal devices. In one embodiment, a terminal receives transmission bandwidth reduction configuration information sent by a network device, where the transmission bandwidth reduction configuration information includes a set of transmission bandwidth reduction parameters supported by the network device. In response, the terminal sends a target transmission bandwidth reduction coefficient to the network device, where the target transmission bandwidth reduction coefficient is a transmission bandwidth reduction coefficient of a serving cell expected by the terminal. A serving cell is one or more cells that currently provide services for the terminal.

Abstract: A high-nickel ternary core-shell precursor for a lithium battery, a positive electrode material and a preparation method therefor. The chemical structural formula of the precursor is zNi(C4H7N2O2)2—Nix-zM1yM21-x-y(OH)2, wherein M1 and M2 are two of cobalt, aluminum, and manganese. The preparation method comprises: pumping a prepared metal salt solution, a dimethylglyoxime-ammonia water composite solution, and an ammonia water solution into a reaction kettle, maintaining the pH of a reaction system, and controlling the reaction time to obtain a sphere-like precursor inner core with a structural formula of Ni(C4H7N2O2)2; pumping the metal salt solution and the ammonia water solution, stopping pumping the dimethylglyoxime-ammonia water composite solution, pumping a sodium hydroxide solution to obtain a sphere-like core-shell precursor, washing, drying, sieving and deironing the precursor, mixing with a lithium source, and calcining to prepare the positive electrode material.

Abstract: A control method includes generating, through a processor, route data of a route, instructing the movable object to execute the route data, detecting an execution status of the movable object, in response to detecting that the movable object is in a route recovery state, controlling the movable object in the route recovery state to resume the execution of the route according to a starting position. The starting position includes at least one of a waypoint of the plurality of waypoints before an interruption, a position determined according to a flight position recorded at a time of the interruption, or a user-designated waypoint.

Abstract: The present disclosure relates generally to aromatic derivatives that are inhibitors of FGFR4 and are useful in treating FGFR4-associated diseases or conditions. Compositions containing the compounds of the present disclosure are also provided.

Abstract: A semiconductor package includes a first semiconductor die, an encapsulant, a high-modulus dielectric layer and a redistribution structure. The first semiconductor die includes a conductive post in a protective layer. The encapsulant encapsulates the first semiconductor die, wherein the encapsulant is made of a first material. The high-modulus dielectric layer extends on the encapsulant and the protective layer, wherein the high-modulus dielectric layer is made of a second material. The redistribution structure extends on the high-modulus dielectric layer, wherein the redistribution structure includes a redistribution dielectric layer, and the redistribution dielectric layer is made of a third material. The protective layer is made of a fourth material, and a ratio of a Young's modulus of the second material to a Young's modulus of the fourth material is at least 1.5.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: Embodiments provide a method of performing a carrier switch for a device wafer, attaching a second wafer and removing a first wafer. A buffer layer is deposited over the device wafer, buffer layer reducing the topography of the surface of the device wafer. After the carrier switch a film-on-wire layer is removed from the buffer layer and then the buffer layer is at least in part removed.

Abstract: A semiconductor structure includes a composite redistribution structure, a first interconnect device and an integrated circuit (IC) package component. The composite redistribution structure includes a first redistribution structure, a second redistribution structure and a third redistribution structure. The second redistribution structure is located between the first redistribution structure and the third redistribution structure. The first interconnect device is embedded in the second redistribution structure. The first interconnect device includes a plurality of metal connectors leveled with a surface of the second redistribution structure and electrically connected to the third redistribution structure. The IC package component is disposed over the third redistribution structure and electrically connected to the first interconnect device via the third redistribution structure.

Abstract: A first polymer layer is formed across a package region and a test region. A first metal pattern is formed in the package region and a first test pattern is simultaneously formed in the test region. The first metal pattern has an upper portion located on the first polymer layer and a lower portion penetrating through the first polymer layer, and the first test pattern is located on the first polymer layer and has a first opening exposing the first polymer layer. A second polymer layer is formed on the first metal pattern in the package region and a second test pattern is simultaneously formed on the first test pattern in the test region. The second polymer layer has a second opening exposing the upper portion of the first metal pattern, and the second test pattern has a third opening greater than the first opening of the first test pattern.

Abstract: A package structure includes a substrate component, a redistribution structure, a package structure, and a probe head. The substrate component is laterally covered by an insulating encapsulation. The redistribution structure is disposed over the substrate component and the insulating encapsulation and electrically connected with the substrate component at a first side, wherein the redistribution structure comprises: a dielectric layer at a second side opposite to the first side; at least one conductive pad disposed in the dielectric layer, wherein a portion of the at least one conductive pad is exposed by the dielectric layer; and at least one conductive pattern in contact with the portion of the at least one conductive pad, wherein a hardness of the at least one conductive pattern is greater than a hardness of the at least one conductive pad. The probe head is electrically connected with the at least one conductive pattern and the at least one conductive pad.