Abstract: A process for removing an oil-in-water emulsion from waste water. The process consists of collecting the emulsion waste water, adding a precipitation reagent with trivalent cations, and adding a base compound to adjust the pH of the waste water. The adjusted waste water converts the dissolved trivalent cations to gelatinous cation hydroxide precipitations and separate the emulsion from the waste water. The process can be enhanced by also utilizing a filtration means to further separate the precipitation from the waste water. The process is designed to reduce the level of the emulsion from 1000 ppm to less than 1 ppm.

Abstract: A computer system is provided which performs a self-test of the memory cells of a memory device prior to loading of a computer program into the memory device, so as to determine the locations of defective memory cells. During loading of the computer program, each instruction step, data block and stack declaration is decoded, and the present invention creates and inserts a jump instruction into the original program code to bypass any defective memory cells without interrupting the intended operation of the instruction steps that are loaded into the memory. The loaded program code is then modified to correct any address-referencing that may be changed due to the insertion of the jump instructions. The present invention can even periodically perform a self-test procedure during the normal operation of the computer system so as to locate new defective memory cells and to modify the program code to bypass these newly-located defective memory cells.

Abstract: When loading executable machine code into memories, the defective memory locations can be bypassed by properly inserting jump instructions or dummy memory allocation instructions in the program code. Prior to loading the executable code into the memories, defective memory locations are checked and recorded first. The source program code are analyzed to see which instruction step will fall into defective memory locations. Dummy memory space allocation instructions or additional jump instructions, are inserted in the original micro code, such that defective memory locations can be bypassed when the modified program code is loaded into the working memory space. The present invention is useful for loading executable programs in programmable and verifiable memories, such as Flash/EEPROM, EPROM, SRAM and DRAM, etc.

Abstract: A method and an apparatus are provided for producing discontinuous streams of an inorganic substance, such as a metal, an alloy, a molten salt, slag or matte, or a slurry of ceramic particles, wherein the substance, in the form of a melt or slurry, is maintained in a container at the bottom of which at least one nozzle is provided containing at least one opening having a thickness that is large enough to withstand mechanical and thermal stresses and the melt or slurry is pushed through such opening(s) by means of an impulse applicator positioned over the opening(s) and operating in a periodic manner.

Abstract: A T-shaped electrode is formed on a semiconductor substrate by first forming a dielectric film on the substrate. A first layer of photoresist is applied on the upper surface of the dielectric film, and a second layer of photoresist is applied over the first layer of photoresist. The first and second layers of photoresist have different optical properties, requiring different wavelengths of ultraviolet for exposure before developing. Portions of the first and second photoresist layers and the dielectric film are selectively removed by photolithographic techniques with one masking step for forming an opening to the substrate. The first and second photoresist layers adjacent to the opening are ion etched to expose the upper surface of the dielectric film adjacent to the opening. A portion of the first photoresist layer adjacent to the opening is removed to undercut the second photoresist layer. Metal is deposited in the opening and on the exposed upper surface of the dielectric film to form a T-shaped electrode.

Abstract: Metallized via-holes and a wraparound metal plating are simultaneously formed on semiconductor chips by patterning a photoresist mask on the front surface of the wafer to open windows over metal pads as well as the grid areas where wraparound plating is desired; etching off the exposed metal if necessary and forming via-holes and grooves in the wafer by reactive ion etching to a depth which is less than the total thickness of the wafer; depositing a thin conductive film along the walls of the grooves and via-holes by electroless methods; plating the walls of the grooves and the via-holes with conductive metal by electrolytic methods; removing the back surface of the wafer ("backlapping") along with the floors of both the grooves and the via-holes, to expose the metal on the wall of the via-holes and separate the individual chips; and, depositing conductive metal on the back surface of the individual chips to complete the grounding path.

Abstract: A method for simultaneous selective plating of viaholes and heat sinks associated with a semiconductor wafer using a metal mask and comprising the steps of:(a) coating a first side of the wafer with an insulating layer to prevent electroplating on this first side;(b) patterning on a second side of the wafer, opposite to the first side, a metal mask for defining the areas where plating should not occur;(c) forming via-holes through said wafer;(d) depositing a thin conductive film to coat the bottom and walls of the via-holes as well as areas of the second side of the wafer not covered by the metal mask; and(e) electrolytically plating the resulting wafer while ultrasonically agitating the electrolyte if necessary to ensure sufficient electrolyte transport into the via-holes for uniform plating.

Abstract: A method is disclosed for forming completely metallized via holes in semiconductor wafers. Metal pads are formed on one face of a semiconductor wafer together with a conductive interconnecting network. An insulating layer is then deposited to cover this face of the wafer. Holes are etched in the opposite face of the wafer up to and exposing a portion of the metal pads. The via holes are then completely filled with metal by means of electroplating, using the metal pads as a cathode.