Abstract: A light emitting diodes (LEDs) is presented. The LED includes a stress-alleviation layer on a substrate. Open regions and stress-alleviation layer regions are formed on the substrate. Epitaxial layers are disposed on the substrate, at least in the open regions therein, thereby forming an LED structure. The substrate is diced through at least a first portion of the stress-alleviation regions, thereby forming the plurality of LEDs.

Abstract: An integrated circuit (IC) including at least a first and a second logical blocks and a photonic board is provided. The photonic board connects with the first and the second logical blocks through a eutectic bonding technology, and communicates at least a logical signal of the first logical block to the second logical block by light conduction.

Abstract: In accordance with a first aspect of the invention, there is provided a method comprising receiving an input as part of a translation request from a requestor, performing a first translation of the input; wherein the first translation is a machine translation, returning the first translation to the requestor; and based on feedback on the first translation from the requestor performing the following (a) fragmenting the input into multiple translation jobs, (b) distributing the multiple translation jobs to a plurality of human translators; (c) generating a second translation of the input based on translations of the multiple jobs by the human translators; and (d) returning the second translation to the requestor.

Abstract: Embodiments of the present invention disclose a copying method that combines optical character recognition (OCR) technology and a search in order to improve the quality of a copy despite the presence of degrading factors. In one embodiment, the search comprises an Internet search and is used to reconstruct/enhance the copy digitally before outputting the copy to print or some other digital medium. Advantageously, a copy produced using the techniques of the present invention may be at least equal to if not better than the original document copied.

Abstract: Embodiments of the invention disclose a capture device, and a portal service for the processing of structured documents in the form of the receipts, and business cards. In one embodiment, the capture device such as a camera-enabled mobile phone passes images of proof of expense (receipts) to the portal service via an intermediate network. The portal service recognizes and classifies the image content into a central repository for later access by an individual or company.

Abstract: System and method for packaging an LED is presented. A preferred embodiment includes a plurality of thermal vias located through the packaging substrate to effectively transfer heat away from the LED, and are preferably formed along with conductive vias that extend through the packaging substrate. The thermal vias are preferably in the shape of circles or rectangular, and may either be solid or else may encircle and enclose a portion of the packaging substrate.

Abstract: A structure and method for a light-emitting diode are presented. A preferred embodiment comprises a substrate with a conductive, poly-crystalline, silicon-containing layer over the substrate. A first contact layer is epitaxially grown, using the conductive, poly-crystalline, silicon-containing layer as a nucleation layer. An active layer is formed over the first contact layer, and a second contact layer is formed over the active layer.

Abstract: An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

Abstract: A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures. The silicon faceted structures are separated from each other, and have a repeated pattern.

Abstract: An integrated circuit structure includes a semiconductor substrate having a first surface region and a second surface region, wherein the first surface region and the second surface region have different surface orientations; a semiconductor device formed at a surface of the first surface region; and a group-III nitride layer over the second surface region, wherein the group-III nitride layer does not extend over the first surface region.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate including a first region and a second region; and forming a first and a second metal-oxide-semiconductor (MOS) device. The step of forming the first MOS device includes forming a first silicon germanium layer over the first region of the semiconductor substrate; forming a silicon layer over the first silicon germanium layer; forming a first gate dielectric layer over the silicon layer; and patterning the first gate dielectric layer to form a first gate dielectric. The step of forming the second MOS device includes forming a second silicon germanium layer over the second region of the semiconductor substrate; forming a second gate dielectric layer over the second silicon germanium layer with no substantially pure silicon layer therebetween; and patterning the second gate dielectric layer to form a second gate dielectric.

Abstract: The present disclosure provides a method of fabricating a FinFET element including providing a substrate including a first fin and a second fin. A first layer is formed on the first fin. The first layer comprises a dopant of a first type. A dopant of a second type is provided to the second fin. High temperature processing of the substrate is performed on the substrate including the formed first layer and the dopant of the second type.

Abstract: The present invention relates to coated powder, comprising a Ti-bearing core and a Ni-bearing coating, which can be used for the production of porous Ni—Ti articles by the self-propagating high temperature synthesis (SHS) method. The obtained articles are ideally suited for use in biomedical applications. According to the invention, a coated powder is used comprising a metallic Ti-bearing core and a metallic Ni-bearing coating, characterised by a Ni:Ti atomic ratio of more than 0.5, preferably between 0.9 and 1.1, and more preferably between 0.96 and 1.04. By using coated powders, local fluctuations in composition are limited and well under control. Milling of powders and the ensuing contamination risks are avoided. The sintered objects obtained using coated powders have a more homogeneous porosity than that using mixed Ni and Ti powders.

Abstract: A composite powder product suitable for hardmetal cutting tools and wear resistance applications is described. The product comprises a hard particulate phase chosen from a range of metallic carbides, nitrides, carbonitrides and the like, onto which hard phase is deposited a coating of cobalt or nickel, or a mixture of cobalt and nickel. The hard particulate phase has a particle size between 0.1 and 10 ?m, and preferably between 0.1 and 2 ?m.

Abstract: A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer on the gate dielectric layer, wherein the first silicon-containing layer is substantially free from p-type and n-type impurities; forming a second silicon-containing layer over the first silicon-containing layer, wherein the second silicon-containing layer comprises an impurity; and performing an annealing to diffuse the impurity in the second silicon-containing layer into the first silicon-containing layer.

Abstract: A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a first silicon-containing layer on the gate dielectric layer, wherein the first silicon-containing layer is substantially free from p-type and n-type impurities; forming a second silicon-containing layer over the first silicon-containing layer, wherein the second silicon-containing layer comprises an impurity; and performing an annealing to diffuse the impurity in the second silicon-containing layer into the first silicon-containing layer.

Abstract: A method and device for restoration of electro-optical image data using an adaptive Wiener filter begins with constructing imaging system Optical Transfer Function, and the Fourier Transformations of the noise and the image. A spatial representation of the imaged object is restored by spatial convolution of the image using a Wiener restoration kernel.

Abstract: The present invention relates to coated powder, comprising a Ti-bearing core and a Ni-bearing coating, which can be used for the production of porous Ni—Ti articles by the self-propagating high temperature synthesis (SHS) method. The obtained articles are ideally suited for use in biomedical applications. According to the invention, a coated powder is used comprising a metallic Ti-bearing core and a metallic Ni-bearing coating, characterised by a Ni:Ti atomic ratio of more than 0.5, preferably between 0.9 and 1.1, and more preferably between 0.96 and 1.04. By using coated powders, local fluctuations in composition are limited and well under control. Milling of powders and the ensuing contamination risks are avoided. The sintered objects obtained using coated powders have a more homogeneous porosity than that using mixed Ni and Ti powders.

Abstract: The present invention relates to high-throughput compound purification and analysis systems that include representative sample fraction storage components that are structured to at least transiently store representative sample fraction aliquots prior to analysis. In addition, related computer program products and methods are also provided.