Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.

Abstract: The invention relates to a load-receiving means, in particular a hook block of a lifting gear, comprising a hook having a shaft and a circumferential groove, in which an annular retaining element engages, which annular retaining element is supported on a supporting surface of a suspension element of the load-receiving means, wherein the annular retaining element has the form of a sleeve, which expands starting from the shaft in the direction of the supporting surface. In order to create a secure load-receiving means, in particular a hook block of a lifting gear, the annular retaining element is designed in the form of a conical sleeve in the manner of a truncated cone and has an exterior outer surface, an interior outer surface due to the sleeve shape, an upper annular top surface and a lower annular base surface.

Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.

Abstract: A method, device and system for acquiring information related to annotations and the content of a document. Annotations are isolated from document content and are associated with portions of the content of the document. Annotations and content are used as a basis for a semantic search of a corpus of other documents. From the corpus, related information is extracted and presented or made available along side of or with the original content and annotations of the document. Each version of a document is stored and made accessible. Any of the versions of a document, with or without a current set of annotations, may be distributed to others for further review and annotation. Annotations are protected and associated with a level of privilege or rights. Annotations are trackable over time and location and are associated with a particular annotator.

Abstract: Described is a system, device and method for granting rights or authorizing access to or delivery of a second, subsequent or other electronic copy of an author's work to consumers and others who have previously purchased a copy of the same or other author's work. The second copy of the work is for use on or through a consumer device such as a second consumer device that is also owned by the consumer who purchased or leased a first copy of the first work. An authentication credential or proof of purchase provides the system a means to determine if authorization may be granted for an electronic copy of an author's work.

Abstract: A method of forming a circuit structure includes providing a substrate; forming recesses in the substrate; forming a mask layer over the substrate, wherein the mask layer covers non-recessed portions of the substrate, with the recesses exposed through openings in the mask layer; forming a buffer/nucleation layer on exposed portions of the substrate in the recesses; and growing a group-III group-V (III-V) compound semiconductor material from the recesses until portions of the III-V compound semiconductor material grown from the recesses join each other to form a continuous III-V compound semiconductor layer.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: Described is a method for identifying text or other information in one or more images and reflowing images of individual elements of text at a word boundary or character boundary on devices of different sizes. The text may be rescaled while retaining the look and feel of the original text. The size may be scaled according to one or more parameters. Text may be captured in a plurality of images and merged together to form a single document or document-like collection. Text may be fully recognized, indexed, sorted and/or be made searchable. Text may be wrapped around objects and features identified as non-text or non-informational elements in an image. Borders or edges between successive elements of text may be smoothed, combined, overlapped and/or blended. Backgrounds of text may be adjusted to make the appearance of successive elements aesthetically pleasing or as close to the original as possible.

Abstract: A semiconductor device includes a silicon substrate; silicon faceted structures formed on a top surface of the silicon substrate; and a group-III nitride layer over the silicon faceted structures. The silicon faceted structures are separated from each other, and have a repeated pattern.

Abstract: An LED device and a method of manufacturing, including an embedded top electrode, are presented. The LED device includes an LED structure and a top electrode. The LED structure includes layers disposed on a substrate, including an active light-emitting region. A top layer of the LED structure is a top contact layer. The top electrode is embedded into the top contact layer, wherein the top electrode electrically contacts the top contact layer.

Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.

Abstract: A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.

Abstract: A device with a touch-sensitive screen supports tapping gestures for identifying, selecting or working with initially unrecognized text. A single tap gesture can cause a portion of a character string to be selected. A double tap gesture can cause the entire character string to be selected. A tap and hold gesture can cause the device to enter a cursor mode wherein a placement of a cursor relative to the characters in a character string can be adjusted. In a text selection mode, a finger can be used to move the cursor from a cursor start position to a cursor end position and to select text between the positions. Selected or identified text can populate fields, control the device, etc. Recognition of text can be performed upon access of an image or upon the device detecting a tapping gesture in association with display of the image on the screen.

Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Abstract: A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.

Abstract: A device structure includes a substrate; a group-III nitride layer over the substrate; a metal nitride layer over the group-III nitride layer; and a light-emitting layer over the metal nitride layer. The metal nitride layer acts as a reflector reflecting the light emitted by the light-emitting layer.

Abstract: A light-emitting diode (LED) device is provided. The LED device is formed on a substrate having a carbon-containing layer. Carbon atoms are introduced into the substrate to prevent or reduce atoms from an overlying metal/metal alloy transition layer from inter-mixing with atoms of the substrate. In this manner, a crystalline structure is maintained upon which the LED structure may be formed.

Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.

Abstract: A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.

Abstract: A graphene-based saturable absorber device suitable for use in a ring-cavity fiber laser or a linear-cavity fiber laser is disclosed. The saturable absorber device includes an optical element and a graphene-based saturable absorber material supported by the optical element and comprising at least one of graphene, a graphene derivative and functionalized graphene. An examplary optical element is an optical fiber having an end facet that supports the saturable absorber material. Various forms of the graphene-based saturable absorber materials and methods of forming same are also disclosed.