Patents by Inventor Ding Yuan

Ding Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Copying system and method
    Patent number: 8724930
    Abstract: Embodiments of the present invention disclose a copying method that combines optical character recognition (OCR) technology and a search in order to improve the quality of a copy despite the presence of degrading factors. In one embodiment, the search comprises an Internet search and is used to reconstruct/enhance the copy digitally before outputting the copy to print or some other digital medium. Advantageously, a copy produced using the techniques of the present invention may be at least equal to if not better than the original document copied.
    Type: Grant
    Filed: June 1, 2009
    Date of Patent: May 13, 2014
    Assignee: ABBYY Development LLC
    Inventor: Ding-Yuan Tang
  • Reflective layer between light-emitting diodes
    Patent number: 8716723
    Abstract: A system and method for manufacturing a light-generating device is described. A preferred embodiment comprises a plurality of LEDs formed on a substrate. Each LED preferably has spacers along the sidewalls of the LED, and a reflective surface is formed on the substrate between the LEDs. The reflective surface is preferably located lower than the active layer of the individual LEDs.
    Type: Grant
    Filed: November 13, 2008
    Date of Patent: May 6, 2014
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Chia-Lin Yu, Chen-Hua Yu, Wen-Chih Chiou
  • III-V compound semiconductor epitaxy from a non-III-V substrate
    Patent number: 8686474
    Abstract: A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The recess includes a sidewall. The first mask is the top surface of the substrate. The buffer/nucleation layer is along the sidewall, and has a different material composition than a material composition of the sidewall. The III-V compound semiconductor material continuously extends from inside the recess on the buffer/nucleation layer to over the first mask.
    Type: Grant
    Filed: January 14, 2013
    Date of Patent: April 1, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ding-Yuan Chen, Wen-Chih Chiou, Chia-Lin Yu, Chen-Hua Yu
  • Light-Emitting Diodes on Concave Texture Substrate
    Publication number: 20140087505
    Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
    Type: Application
    Filed: November 27, 2013
    Publication date: March 27, 2014
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Hung-Ta Lin, Wen-Chih Chiou, Ding-Yuan Chen, Chia-Lin Yu
  • Omnidirectional Reflector
    Publication number: 20140054637
    Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.
    Type: Application
    Filed: November 7, 2013
    Publication date: February 27, 2014
    Applicant: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou
  • Light-emitting diode with textured substrate
    Patent number: 8659033
    Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: February 25, 2014
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Chen-Hua Yu, Wen-Chih Chiou, Ding-Yuan Chen, Chia-Lin Yu, Hung-Ta Lin
  • Light-emitting diodes on concave texture substrate
    Patent number: 8629465
    Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
    Type: Grant
    Filed: January 25, 2012
    Date of Patent: January 14, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hung-Ta Lin, Wen-Chih Chiou, Ding-Yuan Chen, Chia-Lin Yu
  • Load-receiving means, in particular a hook block of a lifting gear
    Patent number: 8608215
    Abstract: A load-receiving apparatus is provided in the form of a hook block of a lifting gear, and includes a hook having a shaft and a circumferential groove in which an annular retaining element engages. The annular retaining element is supported on a supporting surface of a suspension element of the load-receiving apparatus. The annular retaining element has the form of a sleeve, which expands starting from the shaft and continuing in the direction of the supporting surface. In order to create a secure load-receiving apparatus, the annular retaining element is designed in the form of a conical sleeve or a truncated cone, and has an exterior outer surface, an interior outer surface due to the sleeve's conical shape, an upper annular top surface, and a lower annular base surface.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: December 17, 2013
    Assignee: Demag Cranes & Components GmbH
    Inventors: Christoph Passmann, Eberhard Becker, Daniel Sogemeier, Ding Yuan Zhao
  • Omnidirectional reflector
    Patent number: 8609448
    Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: December 17, 2013
    Assignee: TSMC Solid Lighting Ltd.
    Inventors: Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou
  • Light-Emitting Diode with Current-Spreading Region
    Publication number: 20130264539
    Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.
    Type: Application
    Filed: March 11, 2013
    Publication date: October 10, 2013
    Inventors: Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou
  • Forming chalcogenide semiconductor absorbers
    Patent number: 8546176
    Abstract: Sulfur-containing chalcogenide absorbers in thin film solar cell are manufactured by sequential sputtering or co-sputtering targets, one of which contains a sulfur compound, onto a substrate and then annealing the substrate. The anneal is performed in a non-sulfur containing environment and avoids the use of hazardous hydrogen sulfide gas. A sulfurized chalcogenide is formed having a sulfur concentration gradient.
    Type: Grant
    Filed: April 22, 2010
    Date of Patent: October 1, 2013
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Wen-Chin Lee, Wen-Tsai Yen, Ding-Yuan Chen, Liang-Sheng Yu, Yu-Han Chang
  • Light-emitting diode integration scheme
    Patent number: 8525216
    Abstract: A circuit structure includes a carrier substrate, which includes a first through-via and a second through-via. Each of the first through-via and the second through-via extends from a first surface of the carrier substrate to a second surface of the carrier substrate opposite the first surface. The circuit structure further includes a light-emitting diode (LED) chip bonded onto the first surface of the carrier substrate. The LED chip includes a first electrode and a second electrode connected to the first through-via and the second through-via, respectively.
    Type: Grant
    Filed: October 10, 2011
    Date of Patent: September 3, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ding-Yuan Chen, Wen-Chih Chiou, Chen-Hua Yu
  • Light-emitting diode with non-metallic reflector
    Patent number: 8525200
    Abstract: A light-emitting diode (LED) device is provided. The LED device has a substrate, a reflective structure over the substrate, and an LED structure over the reflective structure. The reflective structure is formed of non-metallic materials. In one embodiment, the reflective structure is formed of alternating layers of different non-metallic materials having different refractive indices. In another embodiment, the reflective structure is formed of alternating layers of high-porosity silicon and low-porosity silicon. In yet another embodiment, the reflective structure is formed of silicon dioxide, which may allow the use of fewer layers. The reflective structure may be formed directly on the same substrate as the LED structure or formed on a separate substrate and then bonded to the LED structure.
    Type: Grant
    Filed: November 12, 2008
    Date of Patent: September 3, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ding-Yuan Chen, Wen-Chih Chiou, Chen-Hua Yu
  • III-nitride based semiconductor structure with multiple conductive tunneling layer
    Patent number: 8519414
    Abstract: A semiconductor structure includes a substrate and a conductive carrier-tunneling layer over and contacting the substrate. The conductive carrier-tunneling layer includes first group-III nitride (III-nitride) layers having a first bandgap, wherein the first III-nitride layers have a thickness less than about 5 nm; and second III-nitride layers having a second bandgap lower than the first bandgap, wherein the first III-nitride layers and the second III-nitride layers are stacked in an alternating pattern. The semiconductor structure is free from a III-nitride layer between the substrate and the conductive carrier-tunneling layer. The semiconductor structure further includes an active layer over the conductive carrier-tunneling layer.
    Type: Grant
    Filed: September 20, 2011
    Date of Patent: August 27, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chia-Lin Yu, Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou
  • Realizing N-face III-nitride semiconductors by nitridation treatment
    Patent number: 8486807
    Abstract: A method of forming a semiconductor structure includes providing a substrate; forming a buffer/nucleation layer over the substrate; forming a group-III nitride (III-nitride) layer over the buffer/nucleation layer; and subjecting the III-nitride layer to a nitridation. The step of forming the III-nitride layer comprises metal organic chemical vapor deposition.
    Type: Grant
    Filed: December 17, 2010
    Date of Patent: July 16, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Chia-Lin Yu, Ding-Yuan Chen, Wen-Chih Chiou
  • Method of separating light-emitting diode from a growth substrate
    Patent number: 8486730
    Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
    Type: Grant
    Filed: August 6, 2012
    Date of Patent: July 16, 2013
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Hung-Ta Lin, Chen-Hua Yu, Wen-Chih Chiou
  • Patterned substrate for hetero-epitaxial growth of group-III nitride film
    Patent number: 8435820
    Abstract: A circuit structure includes a substrate and a film over the substrate and including a plurality of portions allocated as a plurality of rows. Each of the plurality of rows of the plurality of portions includes a plurality of convex portions and a plurality of concave portions. In each of the plurality of rows, the plurality of convex portions and the plurality of concave portions are allocated in an alternating pattern.
    Type: Grant
    Filed: March 12, 2012
    Date of Patent: May 7, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Ding-Yuan Chen
  • Omnidirectional reflector
    Patent number: 8415691
    Abstract: A system and method for manufacturing an LED is provided. A preferred embodiment includes a substrate with a distributed Bragg reflector formed over the substrate. A photonic crystal layer is formed over the distributed Bragg reflector to collimate the light that impinges upon the distributed Bragg reflector, thereby increasing the efficiency of the distributed Bragg reflector. A first contact layer, an active layer, and a second contact layer are preferably either formed over the photonic crystal layer or alternatively attached to the photonic crystal layer.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: April 9, 2013
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou
  • LOAD-RECEIVING MEANS, IN PARTICULAR A HOOK BLOCK OF A LIFTING GEAR
    Publication number: 20130069379
    Abstract: The invention relates to a load-receiving means, in particular a hook block of a lifting gear, comprising a hook having a shaft and a circumferential groove, in which an annular retaining element engages, which annular retaining element is supported on a supporting surface of a suspension element of the load-receiving means, wherein the annular retaining element has the form of a sleeve, which expands starting from the shaft in the direction of the supporting surface. In order to create a secure load-receiving means, in particular a hook block of a lifting gear, the annular retaining element is designed in the form of a conical sleeve in the manner of a truncated cone and has an exterior outer surface, an interior outer surface due to the sleeve shape, an upper annular top surface and a lower annular base surface.
    Type: Application
    Filed: March 30, 2010
    Publication date: March 21, 2013
    Applicant: DEMAG CRANES & COMPONENTS GMBH
    Inventors: Christoph Passmann, Eberhard Becker, Daniel Sogemeier, Ding Yuan Zhao
  • Light-emitting diode with current-spreading region
    Patent number: 8399273
    Abstract: A light-emitting diode (LED) device is provided. The LED device has a lower LED layer and an upper LED layer with a light-emitting layer interposed therebetween. A current blocking layer is formed in the upper LED layer such that current passing between an electrode contacting the upper LED layer flows around the current blocking layer. When the current blocking layer is positioned between the electrode and the light-emitting layer, the light emitted by the light-emitting layer is not blocked by the electrode and the light efficiency is increased. The current blocking layer may be formed by converting a portion of the upper LED layer into a resistive region. In an embodiment, ions such as magnesium, carbon, or silicon are implanted into the upper LED layer to form the current blocking layer.
    Type: Grant
    Filed: August 12, 2009
    Date of Patent: March 19, 2013
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Chen-Hua Yu, Wen-Chih Chiou