Abstract: A stackable integrated circuit package system includes: a substrate having a first side and a second side opposite the first side, the substrate having a cavity provided therein; a first integrated circuit die in the cavity with a first interconnect extending out from the cavity without connection and a second interconnect connected to the first side; a first mold compound to cover the first integrated circuit die, the second interconnect, and a portion of the first interconnect; a second integrated circuit die mounted to the first integrated circuit die with a third interconnect connected to the second side; a second mold compound to cover the second integrated circuit die and the third interconnect; and external interconnects, not encapsulated by the second encapsulant, mounted on the second side.

Abstract: A semiconductor device includes a pre-fabricated shielding frame mounted over a sacrificial substrate and semiconductor die. An encapsulant is deposited through an opening in the shielding frame around the semiconductor die. A first portion of the shielding frame to expose the encapsulant. Removing the first portion also leaves a second portion of the shielding frame over the semiconductor die as shielding from interference. A third portion of the shielding frame around the semiconductor die provides a conductive pillar. A first interconnect structure is formed over a first side of the encapsulant, shielding frame, and semiconductor die. The sacrificial substrate is removed. A second interconnect structure over the semiconductor die and a second side of the encapsulant. The shielding frame can be connected to low-impedance ground point through the interconnect structures or TSV in the semiconductor die to isolate the die from EMI and RFI, and other inter-device interference.

Abstract: A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.

Abstract: A semiconductor device has a base carrier with first and second opposing surfaces. A plurality of cavities and base leads between the cavities is formed in the first surface of the base carrier. The first set of base leads can have a different height or similar height as the second set of base leads. A concave capture pad can be formed over the second set of base leads. Alternatively, a plurality of openings can be formed in the base carrier and the semiconductor die mounted to the openings. A semiconductor die is mounted between a first set of the base leads and over a second set of the base leads. An encapsulant is deposited over the die and base carrier. A portion of the second surface of the base carrier is removed to separate the base leads. An interconnect structure is formed over the encapsulant and base leads.

Abstract: A method of manufacture of an embedded integrated circuit package system includes: forming a first conductive pattern on a first structure; connecting a first integrated circuit die, having bumps on a first active side, directly on the first conductive pattern by the bumps; forming a substrate forming encapsulation to cover the first integrated circuit die and the first conductive pattern; forming a channel in the substrate forming encapsulation; and applying a conductive material in the channel.

Abstract: An integrated circuit package in package system includes: a base integrated circuit package with a base lead substantially coplanar with a base die paddle and having a portion with a substantially planar base surface; an extended-lead integrated circuit package with an extended lead having a portion with a substantially planar lead-end surface; a package-stacking layer over the base integrated circuit package; and the extended-lead integrated circuit package over the base integrated circuit package including: an end portion of the extended lead, directly on the package-stacking layer, and the extended lead exposed by and extending away from the bottom of the side of an extended-lead encapsulation and bending downwards toward the direction of the package stacking layer with the substantially planar lead-end surface coplanar with the substantially planar base surface.

Abstract: A semiconductor wafer has a plurality of semiconductor die. First and second conductive layers are formed over opposing surfaces of the semiconductor die, respectively. Each semiconductor die constitutes a WLCSP. A TSV is formed through the WLCSP. A semiconductor component is mounted to the WLCSP. The first semiconductor component is electrically connected to the first conductive layer. A first bump is formed over the first conductive layer, and a second bump is formed over the second conductive layer. An encapsulant is deposited over the first bump and first semiconductor component. A second semiconductor component is mounted to the first bump. The second semiconductor component is electrically connected to the first semiconductor component and WLCSP through the first bump and TSV. A third semiconductor component is mounted to the first semiconductor component, and a fourth semiconductor component is mounted to the third semiconductor component.

Abstract: A semiconductor device has a base carrier having first and second opposing surfaces. The first surface of the base carrier is etched to form a plurality of cavities and multiple rows of base leads between the cavities extending between the first and second surfaces. A second conductive layer is formed over the second surface of the base carrier. A semiconductor die is mounted within a cavity of the base carrier. A first insulating layer is formed over the die and first surface of the base carrier and into the cavities. A first conductive layer is formed over the first insulating layer and first surface of the base carrier. A second insulating layer is formed over the first insulating layer and first conductive layer. A portion of the second surface of the base carrier is removed to expose the first insulating layer and electrically isolate the base leads.

Abstract: A semiconductor package includes a carrier strip having a die cavity and bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip. In one embodiment, the semiconductor die is mounted using a die attach adhesive. In one embodiment, a top surface of the first semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. A metal layer is disposed over the carrier strip to form a package bump and a plated interconnect between the package bump and a contact pad of the first semiconductor die. An underfill material is disposed in the die cavity between the first semiconductor die and a surface of the die cavity. A passivation layer is disposed over the first semiconductor die and exposes a contact pad of the first semiconductor die. An encapsulant is disposed over the carrier strip.

Abstract: An integrated circuit package on package system including forming an interconnect integrated circuit package and attaching an extended-lead integrated circuit package on the interconnect integrated circuit package wherein a mold cap of the extended-lead integrated circuit package faces a mold cap of the interconnect integrated circuit package.

Abstract: An integrated circuit package system includes: mounting a device structure over a package carrier; connecting an internal interconnect between the device structure and the package carrier; forming an interconnect lock over the internal interconnect over the device structure with interconnect lock exposing the device structure; and forming a package encapsulation adjacent to the interconnect lock and over the package carrier.

Abstract: An integrated circuit package in package system including forming a base integrated circuit package with a base lead having a portion with a substantially planar base surface, forming an extended-lead integrated circuit package with an extended lead having a portion with a substantially planar lead-end surface, and stacking the extended-lead integrated circuit package over the base integrated circuit package with the substantially planar lead-end surface coplanar with the substantially planar base surface.

Abstract: A method of manufacturing an integrated circuit packaging system includes: providing an inner lead and an outer lead, the inner lead having an inner peripheral side with a non-linear contour; forming a bump contact, having a groove in and a mesa from the inner lead or the outer lead, the groove adjacent to the mesa; mounting a first device adjacent to the inner lead; connecting a second device to the mesa; and forming an encapsulation material over the first device, the inner lead, and the outer lead and covering the second device.

Abstract: A semiconductor package includes a carrier strip having a die cavity and a plurality of bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip using a die attach adhesive. In one embodiment, a top surface of the semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. Underfill material is deposited into the die cavity between the semiconductor die and a surface of the die cavity. In one embodiment, a passivation layer is deposited over the semiconductor die, and a portion of the passivation layer is etched to expose a contact pad of the semiconductor die. A metal layer is deposited over the package. The metal layer forms a package bump and a plated interconnect between the package bump and the contact pad of the semiconductor die. Encapsulant is deposited over the semiconductor package.

Abstract: A method of manufacture of an integrated circuit packaging system includes: providing a substrate assembly having a connection path; mounting a base device over the substrate assembly with a mount layer; mounting a stack device over the base device and having a stack die and a stack-organic-material; forming a stack-through-via in the stack-organic-material of the stack device and connected to the stack die and the substrate assembly; and applying a shield layer directly on a planarized surface of the stack-through-via partially exposed from the stack-organic-material.

Abstract: A method of manufacture of an integrated circuit package system includes providing a first frame having a first removable backing element connecting a first die attach pad and a first plurality of terminal leads. A first die is attached to the first die attach pad. A substrate is provided. A second die is attached to the substrate. The first die is attached to the second die with a plurality of die interconnects. The first removable backing element is removed after connecting the first die to the second die.

Abstract: A method for manufacturing a semiconductor package system includes: providing a leadframe, having an open center, with leads adjacent to a peripheral edge of the leadframe; making a die support pad, formed without tie bars, separately from the leadframe; providing a coverlay tape for positioning the support pad centered within the leadframe; attaching a semiconductor die to the die support pad through a die attach adhesive, the semiconductor die being spaced from the leads; and connecting a bonding pad on the semiconductor die to one of the leads using a bonding wire.

Abstract: A method of manufacture of an embedded integrated circuit package system includes: forming a first conductive pattern on a first structure; connecting a first integrated circuit die, having bumps on a first active side, directly on the first conductive pattern by the bumps; forming a substrate forming encapsulation to cover the first integrated circuit die and the first conductive pattern; forming a channel in the substrate forming encapsulation; and applying a conductive material in the channel.

Abstract: A semiconductor package system includes: providing a lead frame with a lead; making a die support pad separately from the lead frame; attaching a semiconductor die to the die support pad through a die attach adhesive, the semiconductor die being spaced from the lead; and connecting a bonding pad on the semiconductor die to the lead using a bonding wire.

Abstract: A semiconductor device has a substrate with a cavity formed through first and second surfaces of the substrate. A conductive TSV is formed through a first semiconductor die, which is mounted in the cavity. The first semiconductor die may extend above the cavity. An encapsulant is deposited over the substrate and a first surface of the first semiconductor die. A portion of the encapsulant is removed from the first surface of the first semiconductor die to expose the conductive TSV. A second semiconductor die is mounted to the first surface of the first semiconductor die. The second semiconductor die is electrically connected to the conductive TSV. An interposer is disposed between the first semiconductor die and second semiconductor die. A third semiconductor die is mounted over a second surface of the first semiconductor die. A heat sink is formed over a surface of the third semiconductor die.