Abstract: A method of manufacture of an integrated circuit package system that includes: providing an electrical interconnect system including an inner lead-finger system and an outer lead-finger system; stacking a first device, a second device, and a third device between and over the electrical interconnect system; connecting the first device and the second device to the inner lead-finger system; and connecting the third device to the outer lead-finger system.

Abstract: An integrated circuit package-on-package stacking system includes a leadframe interposer including: a leadframe having a lead; a molded base on a portion of the lead for only supporting the lead; and the leadframe interposer singulated from the leadframe, wherein the lead is bent to support a stack-up height.

Abstract: An embedded integrated circuit package system is provided forming a first conductive pattern on a first structure, connecting a first integrated circuit die on the first conductive pattern, forming a substrate forming encapsulation to cover the first integrated circuit die and the first conductive pattern, forming a channel in the substrate forming encapsulation, and applying a conductive material in the channel.

Abstract: A semiconductor device is made by mounting a prefabricated heat spreader frame over a temporary substrate. The heat spreader frame includes vertical bodies over a flat plate. A semiconductor die is mounted to the heat spreader frame for thermal dissipation. An encapsulant is deposited around the vertical bodies and semiconductor die while leaving contact pads on the semiconductor die exposed. The encapsulant can be deposited using a wafer level direct/top gate molding process or wafer level film assist molding process. An interconnect structure is formed over the semiconductor die. The interconnect structure includes a first conductive layer formed over the semiconductor die, an insulating layer formed over the first conductive layer, and a second conductive layer formed over the first conductive layer and insulating layer. The temporary substrate is removed, dicing tape is applied to the heat spreader frame, and the semiconductor die is singulated.

Abstract: A semiconductor device is made by forming a first conductive layer over a first temporary carrier having rounded indentations. The first conductive layer has a non-linear portion due to the rounded indentations. A bump is formed over the non-linear portion of the first conductive layer. A semiconductor die is mounted over the carrier. A second conductive layer is formed over a second temporary carrier having rounded indentations. The second conductive layer has a non-linear portion due to the rounded indentations. The second carrier is mounted over the bump. An encapsulant is deposited between the first and second temporary carriers around the first semiconductor die. The first and second carriers are removed to leave the first and second conductive layers. A conductive via is formed through the first conductive layer and encapsulant to electrically connect to a contact pad on the first semiconductor die.

Abstract: An integrated circuit package system that includes: providing an electrical interconnect system including an inner lead-finger system and an outer lead-finger system; stacking a first device, a second device, and a third device between and over the electrical interconnect system; connecting the first device and the second device to the inner lead-finger system; and connecting the third device to the outer lead-finger system.

Abstract: A method for manufacturing an integrated circuit package system includes: providing a base package having a first integrated circuit with an inner lead on a periphery thereof and connected thereto with interconnects, and the inner lead partially encapsulated by an inner encapsulation; mounting an outer lead on the periphery of the base package; mounting a second integrated circuit above the base package and connected to the outer lead with the interconnects; and partially encapsulating, the base package and the outer leads with an outer encapsulation leaving a bottom surface of the inner lead and a bottom surface of the outer lead exposed.

Abstract: A semiconductor device includes a pre-fabricated shielding frame mounted over a sacrificial substrate and semiconductor die. An encapsulant is deposited through an opening in the shielding frame around the semiconductor die. A first portion of the shielding frame to expose the encapsulant. Removing the first portion also leaves a second portion of the shielding frame over the semiconductor die as shielding from interference. A third portion of the shielding frame around the semiconductor die provides a conductive pillar. A first interconnect structure is formed over a first side of the encapsulant, shielding frame, and semiconductor die. The sacrificial substrate is removed. A second interconnect structure over the semiconductor die and a second side of the encapsulant. The shielding frame can be connected to low-impedance ground point through the interconnect structures or TSV in the semiconductor die to isolate the die from EMI and RFI, and other inter-device interference.

Abstract: A semiconductor wafer has a plurality of semiconductor die. A peripheral region is formed around the die. An insulating material is formed in the peripheral region. A portion of the insulating material is removed to form a through hole via (THV). A conductive material is deposited in the THV to form a conductive THV. A conductive layer is formed between the conductive THV and contact pads of the semiconductor die. A noise absorbing material is deposited in the peripheral region between the conductive THV to isolate the semiconductor die from intra-device interference. The noise absorbing material extends through the peripheral region from a first side of the semiconductor die to a second side of the semiconductor die. The noise absorbing material has an angular, semi-circular, or rectangular shape. The noise absorbing material can be dispersed in the peripheral region between the conductive THV.

Abstract: A stackable integrated circuit package system includes: a substrate having a first side and a second side opposite the first side, the substrate having a cavity provided therein; a first integrated circuit die in the cavity with a first interconnect extending out from the cavity without connection and a second interconnect connected to the first side; a first mold compound to cover the first integrated circuit die, the second interconnect, and a portion of the first interconnect; a second integrated circuit die mounted to the first integrated circuit die with a third interconnect connected to the second side; a second mold compound to cover the second integrated circuit die and the third interconnect; and external interconnects, not encapsulated by the second encapsulant, mounted on the second side.

Abstract: An integrated circuit package system includes: providing a base package having a first integrated circuit with an inner lead on a periphery thereof and connected thereto with interconnects, and the inner lead partially encapsulated by an inner encapsulation; mounting an outer lead on the periphery of the base package; mounting a second integrated circuit above the base package and connected to the outer lead with the interconnects; and partially encapsulating, the base package and the outer leads with an outer encapsulation leaving a bottom surface of the inner lead and a bottom surface of the outer lead exposed.

Abstract: An integrated circuit package-on-package stacking system includes a leadframe interposer including: a leadframe having a lead; a molded base on a portion of the lead for only supporting the lead; and the leadframe interposer singulated from the leadframe, wherein the lead is bent to support a stack-up height.

Abstract: A stackable integrated circuit package system is provided placing a first integrated circuit die having an interconnect provided thereon in a substrate having a cavity, encapsulating the first integrated circuit die, having the interconnect exposed, in the cavity and along a first side of the substrate, mounting a second integrated circuit die to the first integrated circuit die, and encapsulating the second integrated circuit die along a second side of the substrate.

Abstract: An integrated circuit package-on-package stacking method includes forming a leadframe interposer including: forming a leadframe having a lead; forming a molded base only supporting the lead; and singulating the leadframe interposer from the leadframe.

Abstract: An integrated circuit package system comprising: providing a package substrate; attaching a base package having a portion of the base package substantially exposed over the package substrate; forming a cavity through the package substrate to the base package; and attaching a device partially in the cavity and connected to the portion of the base package substantially exposed.

Abstract: A semiconductor package system includes: providing a leadframe with a lead; making a die support pad separately from the leadframe; attaching a semiconductor die to the die support pad through a die attach adhesive, the semiconductor die being spaced from the lead; and connecting a bonding pad on the semiconductor die to the lead using a bonding wire.

Abstract: An integrated circuit package system includes: providing a base package having a first integrated circuit with an inner lead on a periphery thereof and connected thereto with interconnects, and the inner lead partially encapsulated by an inner encapsulation; mounting an outer lead on the periphery of the base package; mounting a second integrated circuit above the base package and connected to the outer lead with the interconnects; and partially encapsulating, the base package and the outer leads with an outer encapsulation leaving a bottom surface of the inner lead and a bottom surface of the outer lead exposed.

Abstract: A semiconductor device is made by forming solder bumps over a copper carrier. Solder capture indentations are formed in the copper carrier to receive the solder bumps. A semiconductor die is mounted to the copper carrier using a die attach adhesive. The semiconductor die has contact pads formed over its active surface. An encapsulant is deposited over the copper carrier, solder bumps, and semiconductor die. A portion of the encapsulant is removed to expose the solder bumps and contact pads. A conductive layer is formed over the encapsulant to connect the solder bumps and contact pads. The conductive layer operates as a redistribution layer to route electrical signals from the solder bumps to the contact pads. The copper carrier is removed. An insulating layer is formed over the conductive layer and encapsulant. A plurality of semiconductor devices can be stacked and electrically connected through the solder bumps.

Abstract: An integrated circuit package system includes: providing an internal device; encapsulating the internal device with an encapsulation having an outer surface; and forming a redistribution line having connection points on the outer surface of the encapsulation.

Abstract: A semiconductor package includes a carrier strip having a die cavity and a plurality of bump cavities. A semiconductor die is mounted in the die cavity of the carrier strip using a die attach adhesive. In one embodiment, a top surface of the semiconductor die is approximately coplanar with a top surface of the carrier strip proximate to the die cavity. Underfill material is deposited into the die cavity between the semiconductor die and a surface of the die cavity. In one embodiment, a passivation layer is deposited over the semiconductor die, and a portion of the passivation layer is etched to expose a contact pad of the semiconductor die. A metal layer is deposited over the package. The metal layer forms a package bump and a plated interconnect between the package bump and the contact pad of the semiconductor die. Encapsulant is deposited over the semiconductor package.