Patents by Inventor Do Hyun Kim

Do Hyun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7772021
    Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: August 10, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Je-hun Lee, Dong-ju Yang, Tae-hyung Ihn, Do-hyun Kim, Sun-young Hong, Seung-jae Jung, Chang-oh Jeong, Eun-guk Lee
  • Publication number: 20100195234
    Abstract: Disclosed is a luminance-enhanced film, including birefringent island-in-the-sea yarns which comprise island portions and sea portions, each composed of a specific material. Accordingly, unlike conventional stack-type luminance-enhanced films, the luminance-enhanced film of the present invention comprises birefringent island-in-the-sea yarn, as a layer, in the sheet, thus considerably improving luminance without forming a plurality of layers. In addition, several hundred layers are not laminated on one film and the film can be easily fabricated at considerably reduced costs. Furthermore, the luminance-enhanced film has considerably more birefringent interfaces, as compared to films fabricated by conventional methods wherein birefringent fibers are incorporated into sheets, thus considerably improving luminance-enhancement effects and being industrially applicable.
    Type: Application
    Filed: January 26, 2010
    Publication date: August 5, 2010
    Inventors: Yeon Soo Kim, Deog Jae Jo, Jin Soo Kim, Do Hyun Kim, In Young Yang
  • Publication number: 20100196693
    Abstract: Disclosed is an optical-modulation object, including birefringent island-in-the-sea yarns, whose island portions are grouped, based on two or more spinning cores, in a matrix. The optical-modulation object causes formation of an optical modulation interface between island portions and sea portions, thus maximizing optical modulation efficiency, as compared to conventional birefringent island-in-the-sea yarns.
    Type: Application
    Filed: January 26, 2010
    Publication date: August 5, 2010
    Inventors: Yeon Soo Kim, Deog Jae Jo, Jin Soo Kim, Do Hyun Kim, In Young Yang
  • Publication number: 20100195233
    Abstract: Disclosed is a luminance-enhanced film, including birefringent island-in-the-sea yarns, whose island portions are grouped, based on two or more spinning cores, present in a sheet. The luminance-enhanced film causes formation of an optical modulation interface between island portions and sea portions, thus maximizing optical modulation efficiency, as compared to conventional birefringent island-in-the-sea yarns. The birefringent island-in-the-sea yarns of the present invention are free of aggregation of island portions in the center thereof, although the number of island portions is 500 or more. As a result, the birefringent island-in-the-sea yarns maximize an optical modulation interface area, and thus considerably improve optical modulation efficiency, as compared to conventional birefringent island-in-the-sea yarns including one spinning core.
    Type: Application
    Filed: January 26, 2010
    Publication date: August 5, 2010
    Inventors: Yeon Soo Kim, Deog Jae Jo, Jin Soo Kim, Do Hyun Kim, In Young Yang
  • Publication number: 20100156672
    Abstract: Provided are a system and a method for auto valet parking. In the system and method, a parking slot of a target vehicle among a plurality of slots formed in a parking place is determined based on situation information on the parking place and a movement path based on information on current location of the target vehicle and information on the parking slot is determined. The target vehicle is automatically parked in the determined parking slot by moving along the movement path.
    Type: Application
    Filed: December 16, 2009
    Publication date: June 24, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jaejun YOO, Byung Tae Jang, Jeong Dan Choi, Do Hyun Kim, Kyung Bok Sung, Jungsook Kim, Jeong Ah Jang, Kyeong Tae Kim, Jae Han Lim
  • Publication number: 20100155715
    Abstract: A display substrate according to the present invention comprises a gate line formed on a substrate. a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio.
    Type: Application
    Filed: February 26, 2009
    Publication date: June 24, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Pil-Sang YUN, Do-Hyun KIM, Byeong-Beom KIM, Bong-Kyun KIM
  • Publication number: 20100161128
    Abstract: An automatic parking control system includes a movable parking robot to load and carry a vehicle to be parked, a parking guide server for providing the parking robot with a moving path to the target parking space, and one or more posts, installed nearby an accessible parking area, for controlling a moving path of the parking robot in real time through communications with the parking robot.
    Type: Application
    Filed: June 15, 2009
    Publication date: June 24, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jeong Dan CHOI, Byung Tae JANG, Jaejun YOO, Do Hyun KIM, Jungsook KIM, Kyeong Tae KIM, Jae Han LIM, Kyung Bok SUNG, Jeong Ah JANG
  • Publication number: 20100155721
    Abstract: A thin film transistor (TFT) array substrate is provided. The thin film transistor (TFT) array substrate includes an insulating substrate, an oxide semiconductor layer formed on the insulating substrate and including an additive element, a gate electrode overlapping the oxide semiconductor layer, and a gate insulating layer interposed between the oxide semiconductor layer and the gate electrode, wherein the oxygen bond energy of the additive element is greater than that of a base element of the oxide semiconductor layer.
    Type: Application
    Filed: December 22, 2009
    Publication date: June 24, 2010
    Inventors: Je-Hun LEE, Tae-Hyung IHN, Dong-Hoon LEE, Do-Hyun KIM
  • Publication number: 20100156669
    Abstract: Provided are a method for running a network for vehicle detection and a system thereof. Each vehicle detecting device is classified into a plurality of groups based on information provided from the vehicle detecting devices and control information that activates or deactivates components of the corresponding vehicle detecting devices is set for each group based on the information. Power of a signal transmitting the information is set for each vehicle detecting device.
    Type: Application
    Filed: October 23, 2009
    Publication date: June 24, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jungsook KIM, Jae Han Lim, Kyeong Tae Kim, Byung Tae Jang, Jeong Dan Choi, Do Hyun Kim, Jaejun Yoo, Kyung Bok Sung
  • Publication number: 20100149138
    Abstract: Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10?14 A.
    Type: Application
    Filed: July 8, 2009
    Publication date: June 17, 2010
    Inventors: Sung-hoon Lee, Do-hyun Kim, Sang-wook Kim, Chang-jung Kim
  • Publication number: 20100149476
    Abstract: A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate.
    Type: Application
    Filed: August 3, 2009
    Publication date: June 17, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Do-Hyun KIM, Jong-Hyun CHOUNG, Young-Joo CHOI, Hong-Sick PARK, Tae-Hyung IHN, Dong-Hoon LEE, Pil-Sang YUN, Je-Hyeong PARK, Chang-Oh JEONG, Je-Hun LEE, Sun-Young HONG, Bong-Kyun KIM, Byeong-Jin LEE, Nam-Seok SUH
  • Publication number: 20100148169
    Abstract: A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.
    Type: Application
    Filed: July 7, 2009
    Publication date: June 17, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Do-Hyun KIM, Pil-Sang YUN, Ki-Won KIM, Dong-Hoon LEE, Chang-Oh JEONG
  • Publication number: 20100141478
    Abstract: Provided are an adaptive communication method and a sensor node for performing the same. The sensor node adaptively selects transmitted signal output strength and a wakeup zone of transmitted data based on a received signal strength indication of a control packet received from a sink node and existence of an obstacle acquired through a sensor, and transmits data based on the adaptive selection. Also, during an operation as a receive mode, the sensor node wakes up and determines whether to receive the data from the transmit node based on wakeup zone configuration information per sensor node received from the sink node and a wakeup zone selected by a sensor node currently operable as a transmit node.
    Type: Application
    Filed: December 3, 2009
    Publication date: June 10, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Jae Han LIM, Jungsook Kim, Kyeong Tae Kim, Byung Tae Jang, Kyung Bok Sung, Jaejun Yoo, Do Hyun Kim, Jeong Dan Choi, Jeong Ah Jang
  • Publication number: 20100142497
    Abstract: Provided is a method for minimizing energy consumption while increasing a data rate between sensor nodes in a sensor network. In the sensor network, a parent node receives reservation information from a first node among a plurality of child nodes in a first period and broadcasts channel allocation information of the first node according to the reservation information in the first period so that the first node performs the data transmission in a second period or third period and maintains a sleep mode until the first period ends.
    Type: Application
    Filed: December 3, 2009
    Publication date: June 10, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Kyeong Tae KIM, Byung Tae Jang, Jeong Dan CHOI, Do Hyun KIM, Jaejun YOO, Jeong Ah JANG, Kyung Bok SUNG, Jungsook KIM, Jae Han LIM
  • Publication number: 20100138100
    Abstract: Provided is a cruise control system and method. A vehicle cruise control system collects state information of components inside and outside a vehicle, state information of a road on which the vehicle is provided, and drive pattern information of a driver of the vehicle, analyzes a mileage amount and an exhaust gas emission amount of the vehicle based on the collected state information of the components, the road state information, and the drive pattern information, calculates a cruise control speed based on the analysis result, and controls the vehicle to run at the cruise control speed.
    Type: Application
    Filed: September 24, 2009
    Publication date: June 3, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Do Hyun Kim, Jungsook Kim, Jae Han Lim, Kyeong Tae Kim, Byung Tae Jang, Jeong Dan Choi, Jaejun Yoo, Kyung Bok Sung, Jeong Ah Jang
  • Publication number: 20100134322
    Abstract: An apparatus for detecting a vehicle includes a magnetic sensor that continuously obtains a magnetic signal varied due to movement of a vehicle; a gradient detecting unit that detects a gradient of the magnetic signal based on the obtained magnetic signal; and a vehicle status transitioning unit that generates status transition information of the vehicle based on the detected gradient. The apparatus further includes a vehicle coming-in/out determining unit that determines coming-in or coming-out of the vehicle based on the vehicle status transition information.
    Type: Application
    Filed: August 5, 2009
    Publication date: June 3, 2010
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
    Inventors: Jaejun Yoo, Kyung Bok Sung, Do Hyun Kim, Byung Tae Jang, Jeong Dan Choi, Jungsook Kim, Jeong Ah Jang, Kyeong Tae Kim, Jae Han Lim, Jong Hyun Park
  • Publication number: 20100123136
    Abstract: An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.
    Type: Application
    Filed: December 12, 2008
    Publication date: May 20, 2010
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Je-Hun LEE, Do-Hyun Kim, Tae-Hyung Ihn
  • Publication number: 20100083035
    Abstract: Provided is a wireless communication method in a wireless sensor network environment. The method overhears a packet transmitted from a source sensor node to a destination sink node and determines whether the destination sink node receives the packet. A transmission node selected by using local information among a plurality of neighboring sensor nodes transmits the overheard packet to the destination sink node when the packet is not received.
    Type: Application
    Filed: September 29, 2009
    Publication date: April 1, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Jungsook KIM, Jae Han Lim, Kyeong Tae Kim, Byung Tae Jang, Jeong Dan Choi, Do Hyun Kim, Jaejun Yoo, Kyung Bok Sung, Jeong Ah Jang
  • Publication number: 20100065841
    Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
    Type: Application
    Filed: September 9, 2009
    Publication date: March 18, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je-Hun LEE, Ki-Won KIM, Do-Hyun KIM, Woo-Geun LEE, Kap-Soo YOON
  • Publication number: 20100051933
    Abstract: A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.
    Type: Application
    Filed: July 9, 2009
    Publication date: March 4, 2010
    Inventors: Do-Hyun Kim, Je-Hun Lee, Pil-Sang Yun, Dong-Hoon Lee, Bong-Kyun Kim