Patents by Inventor Do Hyun Kim

Do Hyun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120175756
    Abstract: Semiconductor packages having lead frames include a lead frame, which supports a semiconductor chip and is electrically connected to the semiconductor chip by bonding wires, and a molding layer encapsulating the semiconductor chip. The lead frame includes first lead frames extending in a first direction and second lead frames extending in a second direction. The first lead frames may run across the semiconductor chip and support the semiconductor chip and the second lead frames may run across the bottom surface of the semiconductor chip.
    Type: Application
    Filed: October 20, 2011
    Publication date: July 12, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Do-Hyun Kim, Won-young Kim
  • Publication number: 20120161987
    Abstract: Disclosed herein are a method and apparatus for detecting vehicles. The apparatus include a signal generation unit and a vehicle detection unit. The signal generation unit generates a magnetic signal indicating a magnetic field versus time using a magnetic sensor. The vehicle detection unit generates magnetic signal waveform information, including a level value of the magnetic field of the magnetic signal per unit time, using a predetermined time summary unit and a magnetic signal summary unit, and extracts vehicle detection information, indicating whether a vehicle is present, from the magnetic signal waveform information.
    Type: Application
    Filed: December 21, 2011
    Publication date: June 28, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Jae-Jun YOO, Do-Hyun KIM
  • Publication number: 20120148106
    Abstract: A method for providing augmented reality includes acquiring a real-world image including an object; transmitting terminal information, in which the terminal information includes a location information of a terminal and an original retrieval distance; receiving object information corresponding to the object, in which the object information is based on the transmitted terminal information; and overlapping the received object information over the corresponding object in the real-world image. A terminal to perform the methods described herein includes a location information providing unit, an information transmitting/receiving unit, an image processing unit, and a user view analyzing unit.
    Type: Application
    Filed: September 1, 2011
    Publication date: June 14, 2012
    Applicant: PANTECH CO., LTD.
    Inventors: Young Ju SUNG, Hun Hee KANG, Do Hyun KIM, Jae Ho LEE, Yong Gu HA, Sun Mi HWANG
  • Patent number: 8198657
    Abstract: A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion barriers are formed on the semiconductor layer and contain nitrogen. A data line crosses the gate line and has a source electrode partially contacting the diffusion barriers and a drain electrode partially contacting the diffusion barriers and facing the source electrode. The drain electrode is on the gate electrode. A pixel electrode is electrically connected to the drain electrode.
    Type: Grant
    Filed: January 5, 2010
    Date of Patent: June 12, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Dong-Hoon Lee, Do-Hyun Kim, Chang-Oh Jeong, O-Sung Seo, Xin-Xing Li
  • Publication number: 20120139273
    Abstract: A crash box of a bumper for a vehicle is provided in the bumper to absorb collision energy produced in a collision. The crash box is constructed such that upper and lower horizontal partitions and a plurality of vertical partitions are connected to each other to form a lattice structure having a plurality of hollow portions, and each of the vertical partitions is formed to be bent at a middle portion thereof. A vertical partition located at the outermost position of the hollow portions forming the lattice structure is bent towards the inside of the crash box, and a vertical partition provided in a middle portion of the crash box is bent to the outside or inside of the vehicle.
    Type: Application
    Filed: June 27, 2011
    Publication date: June 7, 2012
    Applicants: Hyundai Motor Company, Sung Woo Hitech Co., Ltd., Kia Motors Corporation
    Inventors: Phil Jung Jeong, Hyun Kim, Jun Mo Ku, Hee Jun Jeong, Do Hoi Koo, Do Hyun Kim
  • Publication number: 20120122475
    Abstract: A method and apparatus for estimating a position of an access point (AP) in a Wi-Fi system is provided. The method includes measuring a strength of a signal, transmitted by the AP, at three or more measurement points (MPs), selecting an imaginary attenuation factor, calculating a range between the AP and each of the MPs on the basis of the imaginary attenuation factor and a strength of a signal measured at the MP, calculating an intersecting point of ranging circles in each of which a position of the MP is a center and the range between the MP and the AP is a radius, calculating a best intersecting point from among a plurality of the intersecting points obtained by repeating the calculating the range and the calculating the intersecting point of ranging circles while changing the imaginary attenuation factor, and estimating the best intersecting point as the position of the AP.
    Type: Application
    Filed: November 1, 2011
    Publication date: May 17, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Uzair Ahmed, Wan Sik Choi, Sang Joon Park, Young Su Cho, Do Hyun Kim, Dong Kyoo Kim, Sung Jo Yun, Myung In Ji
  • Publication number: 20120104617
    Abstract: A semiconductor device and a method for manufacturing the same are disclosed. A dummy pattern is formed between a fuse pattern and a semiconductor substrate so as to prevent the semiconductor substrate from being damaged, and a buffer pattern is formed between the dummy pattern and the semiconductor substrate, so that a dummy metal pattern primarily absorbs or reflects laser energy transferred to the semiconductor substrate during the blowing of the fuse pattern, and the buffer pattern secondarily reduces stress generated between the dummy pattern and the semiconductor substrate, resulting in the prevention of a defect such as a crack.
    Type: Application
    Filed: October 5, 2011
    Publication date: May 3, 2012
    Applicant: Hynix Semiconductor Inc.
    Inventors: Ki Soo CHOI, Do Hyun Kim
  • Patent number: 8164152
    Abstract: A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: April 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Je-Hun Lee, Do-Hyun Kim
  • Publication number: 20120037910
    Abstract: A display substrate includes; a gate pattern including a gate electrode disposed on a substrate, a gate insulation layer disposed on the substrate and the gate pattern, an insulation pattern including; a first thickness part disposed on a first area of the gate insulation layer overlapping the gate electrode and a second thickness part disposed on a second area of the gate insulation layer adjacent to the first area, an oxide semiconductor pattern disposed on the first thickness part of the first area, an etch stopper disposed on the oxide semiconductor pattern, a source pattern including a source electrode and a drain electrode which contact the oxide semiconductor pattern, and a pixel electrode which contacts the drain electrode.
    Type: Application
    Filed: May 19, 2011
    Publication date: February 16, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Young-Joo CHOI, Woo-Geun LEE, Do-Hyun KIM
  • Publication number: 20110309510
    Abstract: An array substrate includes a switching element, a signal transmission line, a passivation layer and a pixel electrode. The switching element is disposed on an insulating substrate. The signal transmission line is connected to the switching element and includes a barrier layer, a conductive line, and a copper nitride layer. The barrier layer is disposed on the insulating substrate. The conductive line is disposed on the barrier layer and includes copper or copper alloy. The copper nitride layer covers the conductive line. The passivation layer covers the switching element and the signal transmission line and has a contact hole through which a drain electrode of the switching element is partially exposed. The pixel electrode is disposed on the insulating substrate, and is connected to the drain electrode of the switching element through the contact hole.
    Type: Application
    Filed: August 31, 2011
    Publication date: December 22, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je-Hun LEE, Do-Hyun KIM, Eun-Guk LEE, Chang-Oh JEONG
  • Patent number: 8077268
    Abstract: A thin film transistor array substrate comprising a base substrate, a first wire on the base substrate, a first insulating layer on the base substrate to cover the first wire, a semiconductor layer on the first insulating layer, a second insulating layer on the first insulating layer on which the semiconductor layer is formed, and a second wire on the second insulating layer on the second insulating layer is provided, and a portion of the second wire makes contact with the semiconductor layer through the contact hole.
    Type: Grant
    Filed: June 17, 2008
    Date of Patent: December 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Eun-Guk Lee, Chang-Oh Jeong, Je-Hun Lee, Do-Hyun Kim, Soon-Kwon Lim
  • Patent number: 8067276
    Abstract: An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.
    Type: Grant
    Filed: December 12, 2008
    Date of Patent: November 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Je-Hun Lee, Do-Hyun Kim, Tae-Hyung Ihn
  • Patent number: 8067768
    Abstract: Provided is a thin-film transistor (TFT) display panel having improved electrical and reliability properties and a method of fabricating the TFT display panel. The TFT display panel includes gate wiring formed on a substrate; an oxide active layer pattern formed on the gate wiring; data wiring formed on the oxide active layer pattern to cross the gate wiring; a passivation layer formed on the oxide active layer pattern and the data wiring and made of nitrogen oxide; and a pixel electrode disposed on the passivation layer.
    Type: Grant
    Filed: May 14, 2010
    Date of Patent: November 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kap-Soo Yoon, Do-Hyun Kim, Sung-Hoon Yang, Ki-Hun Jeong, Jae-Ho Choi, Seung-Mi Seo
  • Patent number: 8067767
    Abstract: A display substrate according to the present invention comprises a gate line formed on a substrate, a data line, a thin film transistor connected to the gate line and the data line respectively and pixel electrode connected to the thin film transistor, wherein a channel of the thin film transistor is formed in a direction perpendicular to the substrate and, a layer where the channel is formed includes an oxide semiconductor pattern. ON current of thin film transistor of the display substrate can be increased without loss of aperture ratio.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: November 29, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Pil-Sang Yun, Do-Hyun Kim, Byeong-Beom Kim, Bong-Kyun Kim
  • Patent number: 8055763
    Abstract: Provided are a system and method for processing sensing data from a sensor network. The system includes: a data processing condition managing unit for storing sensing data processing conditions; a data processing function managing unit for storing sensing data processing function information; a processed data managing unit for storing processed sensing data; a data pattern managing unit for storing sensing data pattern information; an acquired data managing unit for storing sensing data; a data acquisition condition managing unit for storing sensing data acquisition conditions; a user requirement acquiring unit for acquiring the sensing data acquisition conditions; a data acquiring unit for acquiring sensing data; a data pattern extracting unit for extracting the pattern of sensing data; a data generating unit for processing the sensing data; and a data processing unit for processing the sensing data.
    Type: Grant
    Filed: October 15, 2007
    Date of Patent: November 8, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Jae-Jun Yoo, Do-Hyun Kim, Mi-Jeong Kim, Byung-Tae Jang, Jong-Hyun Park, Jeong-Dan Choi, Myung-Hee Son, Jung-Sook Kim, Kyung-Bok Sung, Jae-Han Lim
  • Publication number: 20110266538
    Abstract: An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.
    Type: Application
    Filed: July 15, 2011
    Publication date: November 3, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Je-Hun LEE, Do-Hyun KIM, Tae-Hyung IHN
  • Publication number: 20110261287
    Abstract: A liquid crystal display device and a method of manufacturing the same, the device including a liquid crystal display panel, the liquid crystal display panel including substrates facing each other and a liquid crystal layer therebetween; a backlight unit below the liquid crystal display panel, the backlight unit being for emitting light toward the liquid crystal display panel; a filling that fills defect holes on surfaces of the substrates, which surfaces are relatively remote from the liquid crystal layer, the filling having horizontally even surfaces with respect to the surfaces of the substrates, and a cover member disposed over the defect holes filled with the filling.
    Type: Application
    Filed: April 22, 2011
    Publication date: October 27, 2011
    Inventor: Do-Hyun KIM
  • Patent number: 8035110
    Abstract: A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.
    Type: Grant
    Filed: July 7, 2009
    Date of Patent: October 11, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Do-Hyun Kim, Pil-Sang Yun, Ki-Won Kim, Dong-Hoon Lee, Chang-Oh Jeong
  • Publication number: 20110215662
    Abstract: The present invention features a terminal assembly for a motor of a hybrid vehicle as a wire connection structure of a concentrated winding motor, which can maintain a gap between a plurality of terminals using a clip and a holder in an insulated manner. Such a terminal assembly for a motor of a hybrid vehicle, includes: an open type holder with an open top; a plurality of terminals concentrically arranged and inserted into the holder; and a plurality of clips, each inserted between the terminals in an insulated manner to maintain a gap between the terminals.
    Type: Application
    Filed: November 19, 2010
    Publication date: September 8, 2011
    Applicants: HYUNDAI MOTOR COMPANY, KIA MOTORS CORPORATION, HYUNDAI MOBIS CO., LTD.
    Inventors: Hyeoun Dong Lee, Do Hyun Kim, Ki Nam Kim, Sam Gyun Kim, Tack Hwan Kwon
  • Publication number: 20110206932
    Abstract: A carbon nanotube (CNT) is provided having micropores with a diameter of 1 to 10 nm in the side wall and in turn, having a large specific surface area. A production method of a surface-modified CNT (DMWCNT), comprises heating CNT having supported on the surface thereof a metal oxide or metal nitrate fine particle at a temperature of 100 to 1000° C., such as, 200 to 500° C., in an atmosphere containing oxygen. A cyclical solid phase oxidation-reduction reaction between the metal oxide and CNT occurs on the surface of the metal oxide fine particle supported on CNT, and carbon of CNT is oxidized to open a micropore. The metal oxide is preferably cobalt oxide, and the metal nitrate is preferably cobalt nitrate.
    Type: Application
    Filed: October 22, 2010
    Publication date: August 25, 2011
    Applicants: SHOWA DENKO K.K., TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Keiko Waki, Do-Hyun Kim, Masashi Takano