Abstract: A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.

Abstract: A thin film transistor array panel includes an insulating substrate. A gate line is formed on the insulating substrate and has a gate electrode. A gate insulating layer is formed on the gate line. A semiconductor layer is formed on the gate insulating layer and overlaps the gate electrode. Diffusion barriers are formed on the semiconductor layer and contain nitrogen. A data line crosses the gate line and has a source electrode partially contacting the diffusion barriers and a drain electrode partially contacting the diffusion barriers and facing the source electrode. The drain electrode is on the gate electrode. A pixel electrode is electrically connected to the drain electrode.

Abstract: An automatic driving system includes: a reference driving information database for storing reference driving information including reference driving lines, reference driving speeds, and lane change information; and a navigation apparatus for searching a driving route from a starting point to a destination by using a position value of a vehicle and generating driving route information by reflecting the reference driving information in the searched driving route. The automatic driving system further includes a vehicle controller for determining a driving line and a driving speed by using the generated driving route information and performing unmanned automatic driving along the determined driving line at the determined driving speed.

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract: A sputtering target apparatus is provided. The sputtering target apparatus includes a first target assembly including a first target array having a first target, a second target disposed adjacent to the first target, and a first target dividing region disposed between the first and second targets, the first target assembly extending along a first direction, wherein the first target dividing region has a longitudinal cross-section that is oblique with respect to the first direction.

Abstract: Disclosed is a luminance-enhanced film. The luminance-enhanced film includes an intermediate layer comprising a birefringent island-in-the-sea yarn and a sheet laminated on both sides of the intermediate layer, wherein the interface between the intermediate layer and the sheet has an air-gap area ratio of 5% or less, and is characterized in that it is substantially free of curling and does not contain bubbles, thus exhibiting considerably superior optical efficiency and adhesion force. A liquid crystal display utilizing the luminance-enhanced film also advantageously exhibits considerably improved luminance.

Abstract: Provided is a thin-film transistor (TFT) display panel having improved electrical and reliability properties and a method of fabricating the TFT display panel. The TFT display panel includes gate wiring formed on a substrate; an oxide active layer pattern formed on the gate wiring; data wiring formed on the oxide active layer pattern to cross the gate wiring; a passivation layer formed on the oxide active layer pattern and the data wiring and made of nitrogen oxide; and a pixel electrode disposed on the passivation layer.

Abstract: The disclosed thin film transistor array panel includes an insulating substrate, a channel layer including an oxide formed on the insulating substrate. A gate insulating is layer formed on the channel layer and a gate electrode is formed on the gate insulating layer. An interlayer insulating layer is formed on the gate electrode and a data line formed on the interlayer insulating layer and includes a source electrode, wherein the data line is made of a first conductive layer and a second conductive layer. A drain electrode formed on the interlayer insulating layer, and includes the first conductive layer and the second conductive layer. A pixel electrode extends from the first conductive layer of the drain electrode and a passivation layer formed on the data line and the drain electrode. A spacer formed on the passivation layer.

Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Abstract: A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

Abstract: Provided are an intelligent parking guidance apparatus and method. The intelligent parking guidance apparatus includes: an image sensor node recognizing a vehicle number of a vehicle, sensor nodes determining whether the vehicle exists in their own positions, a parking management server generating information for guiding the vehicle to an available parking space, and a mobile communication terminal receiving the information. The intelligent parking guidance apparatus and method provide information regarding parking lots which are within a predetermined distance from a destination and available parking spaces of each parking lot, to a driver, as well as provide a road guidance service to the driver to guide his/her vehicle to the destination, so that the driver can select an optimal parking lot.

Abstract: An apparatus is for guiding a vehicle traveling of a vehicle by using information technology infrastructures. The apparatus includes: a control terminal for controlling the vehicle traveling; sensing devices that collect circumstance information of guidance areas desirous of guiding the vehicle by using the information technology infrastructures provided on the guidance areas; and a server device that recognizes a circumstance of the guidance areas to create a guidance route based on the collected circumstance information by the sensing device so that the control terminal controls the vehicle to travel along the guidance route.

Abstract: A rotor is provided. The rotor includes a bearing yoke, a supporting member, a rotor substrate, a coil, and a weight coupled to the supporting member. The supporting member is coupled to the bearing yoke. The rotor substrate is supported by the supporting member. The coil is supported by the supporting member and electrically connected to the rotor substrate. The weight is coupled to the supporting member.

Abstract: The present invention relates to a time synchronization method in a wireless sensor network. In the present invention, if an upper node requests a lower reference node to start time synchronization, the lower reference node broadcasts a first sync reference packet. The upper node receives the first sync reference packet and transmits the first sync reference packet reception time to the lower reference node. The lower reference node broadcasts the first sync reference packet reception time, such that the other nodes perform time synchronization on the basis of the first sync reference packet reception time. Meanwhile, the lower reference node estimates the first sync reference packet reception time of the upper node to calculate the reception estimation time, and transmits the reception estimation time to a determination node that is two hops anterior to the lower reference node.

Abstract: A method for manufacturing a thin film transistor array panel includes forming a gate line on a substrate; sequentially forming a gate insulating layer, a silicon layer, and a conductor layer including a lower layer and an upper layer on the gate line, forming a photoresist film, on the conductor layer, patterning the photoresist film to form a photoresist pattern including a first portion and a second portion having a greater thickness than the first portion, etching the upper layer and the lower layer by using the photoresist pattern as art etch mask, etching the silicon layer by using the photoresist pattern as an etch mask to form a semiconductor, removing the second portion of the photoresist pattern by using an etch back process, selectively wet-etching the upper layer of the conductor layer by using the photoresist pattern as an etch mask, dry-etching the lower layer of the conductor layer by using the photoresist pattern as an etch mask to form a data line and a drain electrode including remaining upp

Abstract: Provided are a single-board type vehicle driving information measuring apparatus and method using a sum of absolute difference (SAD) hardware accelerator. In the vehicle driving information measuring apparatus and method, time differences between vehicle sensing signals sensed by two or more sensing units are accurately calculated in real time by the SAD hardware accelerator, and the velocity and acceleration of a vehicle can be accurately calculated based on the accurate time differences between the vehicle sensing signals. The vehicle driving information measuring apparatus is operated in two separate modes, that is, a vehicle sensing mode and a velocity measuring mode. Accordingly, power consumption of the apparatus can be minimized. In addition, the apparatus can be provided with a wireless transceiver, so that the apparatus can be constructed and operated without external cables. Further, functional blocks of the apparatus can be powered separately.

Abstract: Disclosed is a spinneret for preparing island-in-the-sea yarns, wherein island ingredient supply channels are partitioned into a plurality of groups in a discharge portion. The island-in-the-sea yarns prepared using the spinneret can prevent aggregation of island portions in the center thereof, although the number of island portions is 500 or more. Accordingly, island-in-the-sea yarns are considerably advantageous for the preparation of microfibers, since 500 or more island portions can be disposed in one island-in-the-sea yarn and fineness of island portions can thus be reduced. In addition, the island-in-the-sea yarns have an advantage of considerably reduced production costs, since 500 or more microfibers can be produced from one island-in-the-sea yarn. Furthermore, the island-in-the-sea yarns render a specific color according to the ratio of sea portions to island portions and diameter of fibers, without adding chromogenic compounds such as dyes, and are thus applicable to photochromic fibers.

Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.

Abstract: Disclosed is a luminance-enhanced film, including birefringent island-in-the-sea yarns which comprise island portions and sea portions, each composed of a specific material. Accordingly, unlike conventional stack-type luminance-enhanced films, the luminance-enhanced film of the present invention comprises birefringent island-in-the-sea yarn, as a layer, in the sheet, thus considerably improving luminance without forming a plurality of layers. In addition, several hundred layers are not laminated on one film and the film can be easily fabricated at considerably reduced costs. Furthermore, the luminance-enhanced film has considerably more birefringent interfaces, as compared to films fabricated by conventional methods wherein birefringent fibers are incorporated into sheets, thus considerably improving luminance-enhancement effects and being industrially applicable.

Abstract: Disclosed is an optical-modulation object, including birefringent island-in-the-sea yarns, whose island portions are grouped, based on two or more spinning cores, in a matrix. The optical-modulation object causes formation of an optical modulation interface between island portions and sea portions, thus maximizing optical modulation efficiency, as compared to conventional birefringent island-in-the-sea yarns.