Patents by Inventor Do Hyun Kim

Do Hyun Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150333183
    Abstract: A thin film transistor include a control electrode, a semiconductor layer on the control electrode, an input electrode, at least a portion of the input electrode being on the semiconductor layer, and an output electrode spaced apart from the input electrode, at least a portion of the output electrode being on the semiconductor layer. Each of the input electrode and the output electrode includes a wiring layer including a metal material, a dummy portion on a side part of the wiring layer, the dummy portion including an oxide of the metal material, and a protection layer on the wiring layer, the protection layer overlapping the wiring layer and the dummy portion.
    Type: Application
    Filed: April 15, 2015
    Publication date: November 19, 2015
    Inventors: Chanwoo YANG, Do-Hyun KIM, Jeongju PARK, Junhyun PARK, Doohyoung LEE, Xinxing LI
  • Patent number: 9189981
    Abstract: A display device and a display method using magnetic particles are disclosed. The display method includes: applying a first magnetic field to a plurality of particles in a state where the plurality of particles having a magnetic property and a certain color are dispersed in a solvent so that the plurality of particles are aligned in a direction parallel to a direction of the first magnetic field, and thus a plurality of particle chains are formed; and applying a second magnetic field to at least a part of the formed plurality of particle chains so that at least a part of the plurality of particle chains moves in a direction close to a display surface in an area to which the second magnetic field is applied, and thus the certain color is displayed on the display surface.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: November 17, 2015
    Assignee: NANOBRICK CO., LTD.
    Inventors: Jae Hyun Joo, Do Hyun Kim, Youn Jung Park, In Sook Lee
  • Publication number: 20150318312
    Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
    Type: Application
    Filed: July 14, 2015
    Publication date: November 5, 2015
    Inventors: Pil-Sang Yun, Ki-Won Kim, Hye-Young Ryu, Woo-Geun Lee, Seung-Ha Choi, Jae-Hyoung Youn, Kyoung-Jae Chung, Young-Wook Lee, Je-Hun Lee, Kap-Soo Yoon, Do-Hyun Kim, Dong-Ju Yang, Young-Joo Choi
  • Publication number: 20150318317
    Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
    Type: Application
    Filed: July 13, 2015
    Publication date: November 5, 2015
    Inventors: Pil-Sang YUN, Ki-Won KIM, Hye-Young RYU, Woo-Geun LEE, Seung-Ha CHOI, Jae-Hyoung YOUN, Kyoung-Jae CHUNG, Young-Wook LEE, Je-Hun LEE, Kap-Soo YOON, Do-Hyun KIM, Dong-Ju YANG, Young-Joo CHOI
  • Publication number: 20150311234
    Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.
    Type: Application
    Filed: July 9, 2015
    Publication date: October 29, 2015
    Inventors: Jae Woo PARK, Do-Hyun KIM, Young Joo CHOI, Dong Hoon LEE, Sung Haeng CHO
  • Patent number: 9171864
    Abstract: A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same.
    Type: Grant
    Filed: April 9, 2014
    Date of Patent: October 27, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Xinxing Li, Do-Hyun Kim, Chan-Woo Yang, Jeong-Ju Park, Jun-Hyun Park, Xun Zhu
  • Patent number: 9162923
    Abstract: A method to prepare polymer woven fabric surface with selective oleophilicity or hydrophobicity and oil-oil separation and oil-water separation filter prepared by using the surface. The method to prepare the surface with selective oleophilicity or hydrophobicity includes steps comprising a step to form nano meter sized pores on the surface of the polymer woven fabric surface with micro sized pores through drying type etching; and a step to form selective oleophobic or hydrophobic film on the nano meter sized pores. It is possible to control hydrophobic/oleophobic property according to pore size, material or thickness of the film and this polymer surface with hybrid pores can be used in various areas such as an oil filter for car capable of selective separation of oil-oil mixture and water-oil mixture, disposal of waste oil, treatment of marine oil leakage, and pretreatment of crude oil refinement.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: October 20, 2015
    Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Heon Ju Lee, Myoung Woon Moon, Ji Hyun So, Eu Sun Yu, Tae Jun Ko, Seock Heon Lee, Do Hyun Kim, Kyu Hwan Oh
  • Patent number: 9159745
    Abstract: A display substrate is provided. The display substrate includes a gate interconnection disposed on an insulating substrate, an oxide semiconductor pattern disposed on the gate interconnection and including an oxide semiconductor, and a data interconnection disposed on the oxide semiconductor pattern to interconnect the gate interconnection. The oxide semiconductor pattern includes a first oxide semiconductor pattern having a first oxide and a first element and a second oxide semiconductor pattern having a second oxide.
    Type: Grant
    Filed: December 30, 2010
    Date of Patent: October 13, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Ki-Won Kim, Kap-Soo Yoon, Do-Hyun Kim, Hyun-Jung Lee
  • Publication number: 20150252562
    Abstract: The present invention provides a sound-absorbing material with excellent sound-absorbing performance and a method for manufacturing thereof. More particularly, it relates to a sound-absorbing material, which can improve sound absorption coefficient and transmission loss by forming large surface area and air layer, so as to induce viscosity loss of incident sound energy, may make light-weight design possible because it can express excellent sound-absorbing performance even using reduced amount of fiber, and can improve sound-absorbing performance by using binder fiber having rebound resilience, so as to maintain enough strength between fiber and also to maximize viscosity loss of sound energy transmitted to fiber structure; and a method for manufacturing thereof.
    Type: Application
    Filed: September 26, 2013
    Publication date: September 10, 2015
    Applicant: Hyundai Motor Company
    Inventors: Hyo Seok Kim, Do Hyun Kim, Chi Hun Kim, Kie Youn Jeong, Bong Hyun Park, Jung Wook Lee
  • Patent number: 9128312
    Abstract: A flat display device includes a flat display module that produces an image. The device also includes a reflective sheet at a rear side of the flat display module, a support member on the reflective sheet, and an optical adhesive film adhered to the front surface of the flat display module, to sides of the flat display module, and to a portion of a back of the support member that is opposite the reflective sheet. The image is produced on the front surface of the flat display module and is emitted through the optical adhesive film.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: September 8, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jong-Nam Lee, Kyu-Seok Kim, Do-Hyun Kim, Jeong-Min Park
  • Patent number: 9123597
    Abstract: A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: September 1, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Je-Hun Lee, Ki-Won Kim, Do-Hyun Kim, Woo-Geun Lee, Kap-Soo Yoon
  • Patent number: 9111805
    Abstract: A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
    Type: Grant
    Filed: March 31, 2014
    Date of Patent: August 18, 2015
    Assignee: Samsung Display Co., Ltd.
    Inventors: Pil-Sang Yun, Ki-Won Kim, Hye-Young Ryu, Woo-Geun Lee, Seung-Ha Choi, Jae-Hyoung Youn, Kyoung-Jae Chung, Young-Wook Lee, Je-Hun Lee, Kap-Soo Yoon, Do-Hyun Kim, Dong-Ju Yang, Young-Joo Choi
  • Publication number: 20150225290
    Abstract: A method to prepare polymer woven fabric surface with selective oleophilicity or hydrophobicity and oil-oil separation and oil-water separation filter prepared by using the surface. The method to prepare the surface with selective oleophilicity or hydrophobicity includes steps comprising a step to form nano meter sized pores on the surface of the polymer woven fabric surface with micro sized pores through drying type etching; and a step to form selective oleophobic or hydrophobic film on the nano meter sized pores. It is possible to control hydrophobic/oleophobic property according to pore size, material or thickness of the film and this polymer surface with hybrid pores can be used in various areas such as an oil filter for car capable of selective separation of oil-oil mixture and water-oil mixture, disposal of waste oil, treatment of marine oil leakage, and pretreatment of crude oil refinement.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 13, 2015
    Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
    Inventors: Heon Ju LEE, Myoung Woon MOON, Ji Hyun SO, Eu Sun YU, Tae Jun KO, Seock Heon LEE, Do Hyun KIM, Kyu Hwan OH
  • Patent number: 9099438
    Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.
    Type: Grant
    Filed: October 25, 2012
    Date of Patent: August 4, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Jae Woo Park, Do-Hyun Kim, Young Joo Choi, Dong Hoon Lee, Sung Haeng Cho
  • Publication number: 20150204066
    Abstract: Disclosed are a sound-absorbing material with improved sound-absorbing performance and a method for manufacturing the sound-absorbing material. The sound-absorbing material may improve sound absorption coefficient and transmission loss by forming large surface area and air layer, so as to induce viscosity loss of incident sound energy, and may provide light-weight design of a sound absorbing part or material since sound-absorbing performance may be substantially improved using reduced amount of fiber. Further, the sound-absorbing material may improve sound-absorbing performance by using binder fiber having rebound resilience, so as to maintain enough strength between fibers and also to maximize viscosity loss of sound energy transmitted to fiber structure.
    Type: Application
    Filed: March 30, 2015
    Publication date: July 23, 2015
    Inventors: Hyo Seok Kim, Do Hyun Kim, Chi Hun Kim, Kie Youn Jeong, Bong Hyun Park, Jung Wook Lee
  • Publication number: 20150191868
    Abstract: A super-hydrophobic fiber of the present disclosure includes: a nano-needle fiber having a surface including needle-shaped nano structures; and a coating layer disposed on the surface including the nano structures, and containing a hydrophobic material. The fiber has no aging effect, and thus, is excellent in durability, and has such a large contact angle and such as small sliding angle that the fiber may not be wet with water. A method for fabricating the super-hydrophobic fiber includes: a preparation step of preparing a pre-treating fiber; an etching step of etching a surface and an inner portion of the pre-treating fiber to fabricate a nano-needle fiber having a surface on which needle-shaped nano structures are formed; and a coating step of forming a coating layer containing a hydrophobic material, and enables mass production and is performed by simple processes.
    Type: Application
    Filed: January 2, 2015
    Publication date: July 9, 2015
    Inventors: Heon Ju LEE, Myoung Woon MOON, Jeong Sim LEE, Eu Sun YU, Won Jin JO, Do Hyun KIM, Kyu Hwan OH, Tae Jun KO
  • Publication number: 20150155311
    Abstract: A liquid crystal display and a method of manufacturing the same are provided. The liquid crystal display includes an insulating substrate, a gate electrode formed on the insulating substrate, an oxide semiconductor layer formed on the gate electrode, an etch stopper formed on the oxide semiconductor layer in a channel area, a common electrode formed on the insulating substrate, source and drain electrodes separated from each other on the etch stopper and extending to an upper portion of the oxide semiconductor layer, a passivation layer formed on the etch stopper, the common electrode, the source and drain electrodes, and a pixel electrode formed on the passivation layer and connected to the drain electrode.
    Type: Application
    Filed: February 13, 2015
    Publication date: June 4, 2015
    Inventors: JE-HUN LEE, DO-HYUN KIM
  • Publication number: 20150155309
    Abstract: A display substrate includes a gate metal pattern including a gate line disposed on a base substrate and a gate electrode electrically connected with the gate line, an active pattern entirely overlapped with the gate metal pattern and comprising an oxide semiconductor and a data metal pattern disposed on the active pattern and including a data line, a source electrode electrically connected with the gate line and a drain electrode spaced apart from the source electrode. The active pattern has an overlapped region in which the active pattern is overlapped with the source electrode and the drain electrode and an exposed region in which the active pattern is not overlapped with the source electrode and the drain electrode. The thickness of the overlapping region and a thickness of the exposing region are same.
    Type: Application
    Filed: April 9, 2014
    Publication date: June 4, 2015
    Applicant: Samsung Display Co., LTD.
    Inventors: Xinxing LI, Do-Hyun KIM, Chan-Woo YANG, Jeong-Ju PARK, Jun-Hyun PARK, Xun ZHU
  • Patent number: 9048326
    Abstract: A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: June 2, 2015
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Youngjoo Choi, Gwang-Bum Ko, GwonHeon Ryu, Joongeol Kim, Do-Hyun Kim, Sang-Moon Moh, WooGeun Lee, WonHee Lee
  • Patent number: 9035297
    Abstract: A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: May 19, 2015
    Assignees: SAMSUNG CORNING PRECISION MATERIALS CO., LTD., SAMSUNG DISPLAY CO., LTD., SAMSUNG CORNING ADVANCED GLASS, LLC
    Inventors: Jaewoo Park, Yoon Gyu Lee, Do-Hyun Kim, Dongjo Kim, Juok Park, Insung Sohn, Sangwon Yoon, Gunhyo Lee, Yongjin Lee, Woo-Seok Jeon