Abstract: A crash box of a bumper for a vehicle is provided in the bumper to absorb collision energy produced in a collision. The crash box is constructed such that upper and lower horizontal partitions and a plurality of vertical partitions are connected to each other to form a lattice structure having a plurality of hollow portions, and each of the vertical partitions is formed to be bent at a middle portion thereof. A vertical partition located at the outermost position of the hollow portions forming the lattice structure is bent towards the inside of the crash box, and a vertical partition provided in a middle portion of the crash box is bent to the outside or inside of the vehicle.

Abstract: A thin film transistor array panel includes: a gate line disposed on a substrate and including a gate electrode, a semiconductor layer including an oxide semiconductor disposed on the substrate, and a data wire layer disposed on the substrate and including a data line intersecting the gate line, a source electrode connected to the data line, and a drain electrode facing the source electrode. In addition, at least one of the data line, the source electrode or the drain electrode of the data wire layer includes a barrier layer and a main wiring layer disposed on the barrier layer. The main wiring layer includes copper or a copper alloy. Also, the barrier layer includes a metal oxide, and the metal oxide includes zinc.

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract: The present invention relates to a time synchronization method in a wireless sensor network. In the present invention, if an upper node requests a lower reference node to start time synchronization, the lower reference node broadcasts a first sync reference packet. The upper node receives the first sync reference packet and transmits the first sync reference packet reception time to the lower reference node. The lower reference node broadcasts the first sync reference packet reception time, such that the other nodes perform time synchronization on the basis of the first sync reference packet reception time. Meanwhile, the lower reference node estimates the first sync reference packet reception time of the upper node to calculate the reception estimation time, and transmits the reception estimation time to a determination node that is two hops anterior to the lower reference node.

Abstract: A thin film transistor (TFT) substrate and a method of fabricating the same are provided. The thin film transistor substrate may have low resistance characteristics and may have reduced mutual diffusion and contact resistance between an active layer pattern and data wiring. The thin film transistor substrate may include gate wiring formed on an insulating substrate. Oxide active layer patterns may be formed on the gate wiring and may include a first substance. Data wiring may be formed on the oxide active layer patterns to cross the gate wiring and may include a second substance. Barrier layer patterns may be disposed between the oxide active layer patterns and the data wiring and may include a third substance.

Abstract: A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.

Abstract: A sputtering target apparatus is provided. The sputtering target apparatus includes a first target assembly including a first target array having a first target, a second target disposed adjacent to the first target, and a first target dividing region disposed between the first and second targets, the first target assembly extending along a first direction, wherein the first target dividing region has a longitudinal cross-section that is oblique with respect to the first direction.

Abstract: A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.

Abstract: An automatic driving system includes: a reference driving information database for storing reference driving information including reference driving lines, reference driving speeds, and lane change information; and a navigation apparatus for searching a driving route from a starting point to a destination by using a position value of a vehicle and generating driving route information by reflecting the reference driving information in the searched driving route. The automatic driving system further includes a vehicle controller for determining a driving line and a driving speed by using the generated driving route information and performing unmanned automatic driving along the determined driving line at the determined driving speed.

Abstract: Provided are a wire structure, a method for fabricating a wire, a thin film transistor (TFT) substrate and a method for fabricating a TFT substrate. The wire structure includes a barrier layer formed on a substrate and including a copper layer and a copper solid solution layer.

Abstract: A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.

Abstract: A manufacturing method of a thin film transistor (TFT) includes forming a gate electrode including a metal that can be combined with silicon to form silicide on a substrate and forming a gate insulation layer by supplying a gas which includes silicon to the gate electrode at a temperature below about 280° C. The method further includes forming a semiconductor on the gate insulation layer, forming a data line and a drain electrode on the semiconductor and forming a pixel electrode connected to the drain electrode.

Abstract: A thin film transistor array panel includes: a substrate; a gate line disposed on the substrate and including a gate electrode; a gate insulating layer disposed on the gate line; an semiconductive oxide layer disposed on the gate insulating layer; a data line disposed on the semiconductive oxide layer and including a source electrode; a drain electrode facing the source electrode on the semiconductive oxide layer; and a passivation layer disposed on the data line. The semiconductive oxide layer is patterned with chlorine (Cl) containing gas which alters relative atomic concentrations of primary semiconductive characteristic-providing elements of the semiconductive oxide layer at least at a portion where a transistor channel region is defined.

Abstract: The vehicle detection apparatus includes a communication unit, a magnetic sensing unit, a calibration information generation unit, a vehicle detection unit, and a control unit. The communication unit receives information about movement of a reference vehicle from a central management center. The magnetic sensing unit senses the change in a magnetic field attributable to the movement of a vehicle, and generates a magnetic signal. The calibration information generation unit generates calibration information. The vehicle detection unit calibrates the change in the magnetic signal attributable to movement of an actual vehicle based on the calibration information, and detects the movement of the actual vehicle. The control unit controls the above units, and sets the mode to calibration information generation mode in order to generate the calibration information and to vehicle detection mode in order to sense the movement of the actual vehicle.

Abstract: A display substrate includes; a gate pattern including a gate electrode disposed on a substrate, a gate insulation layer disposed on the substrate and the gate pattern, an insulation pattern including; a first thickness part disposed on a first area of the gate insulation layer overlapping the gate electrode and a second thickness part disposed on a second area of the gate insulation layer adjacent to the first area, an oxide semiconductor pattern disposed on the first thickness part of the first area, an etch stopper disposed on the oxide semiconductor pattern, a source pattern including a source electrode and a drain electrode which contact the oxide semiconductor pattern, and a pixel electrode which contacts the drain electrode.

Abstract: Provided is a wireless communication method in a wireless sensor network environment. The method overhears a packet transmitted from a source sensor node to a destination sink node and determines whether the destination sink node receives the packet. A transmission node selected by using local information among a plurality of neighboring sensor nodes transmits the overheard packet to the destination sink node when the packet is not received.

Abstract: A logistics support method of a logistics support system for supporting online shopping includes: receiving a usable range for a waybill number from at least one delivery service company system; receiving product order information, except for personal information, from a sales company server selling a product; receiving a request for waybill output information containing the product order information from a supply company system supplying the product or the delivery service company system delivering the product; receiving and encrypting the personal information corresponding to the product order information from the sales company server; generating the waybill output information containing the encrypted personal information, the product order information, and a waybill number belong to the usable waybill number range; and transmitting the waybill output information to the supply company system or the delivery service company system.

Abstract: A cell-based vehicle driving control system includes a local server for obtaining road environment information on roads within a cell and target vehicle information on a target vehicle within the cell and generating local waypoints based on the road environment information and the target vehicle information; a global server for monitoring the target vehicle information, the road environment information and local server information on the local server received from the local server; and a vehicle control terminal, mounted in the target vehicle, for receiving the local waypoints from the local server and controlling the target vehicle based on the local waypoints. The road environment information is obtained by using at least one sensor installed on the roads.

Abstract: An apparatus is for guiding a vehicle traveling of a vehicle by using information technology infrastructures. The apparatus includes: a control terminal for controlling the vehicle traveling; sensing devices that collect circumstance information of guidance areas desirous of guiding the vehicle by using the information technology infrastructures provided on the guidance areas; and a server device that recognizes a circumstance of the guidance areas to create a guidance route based on the collected circumstance information by the sensing device so that the control terminal controls the vehicle to travel along the guidance route.

Abstract: An oxide or nitride semiconductor layer is formed over a substrate. A first conductive layer including a first element and a second element, and a second conductive layer including the second element are formed over the semiconductor layer. The first element is oxidized or nitrogenized near an interface region between the first conductive layer and the oxide or nitride semiconductor layer by heat treatment or laser irradiation. The Gibbs free energy of oxide formation of the first element is lower than those of the second element or any element in the oxide or nitride semiconductor layer.