Abstract: A shoe care device includes an inner cabinet, an air supply device that is configured to blow air to an accommodated space of the inner cabinet and includes a plurality of dehumidifying materials separate from one another, and a controller configured to control the air supply device. The air supply device includes a connection path configured to circulate air between an inlet and an outlet of the inner cabinet, and a regeneration path branched from the connection path and configured to guide air having passed through at least one of the dehumidifying materials to a portion of the air supply device other than the inlet. The controller is configured to control the air supply device to selectively open and close at least one of the connection path or the regeneration path based on whether or not at least one of the dehumidifying materials is heated.

Abstract: A thin film transistor substrate includes a thin film transistor, on a substrate, including an active layer; a conductive material layer; and a gate electrode spaced apart and partially overlapping the active layer. The active layer includes a channel area partially overlapping the gate electrode, and a source area and a drain area connected to respective sides of the channel area. The conductive material layer includes a first and second conductive material layer respectively on the source drain areas. The first conductive material layer overlaps at least a portion of the channel area. The active layer includes an active hole in which the active layer is absent within an area defined by the active layer, and, in a plan view, the active hole extends from the channel area to the drain area.

Abstract: A thin film transistor and a display apparatus including the same are provided. The thin film transistor includes an active layer, a sub-conductive material layer on the active layer, a gate electrode spaced apart from the active layer and at least partially overlapping the active layer, and a conductive material layer on the active layer. The active layer includes a channel portion partially overlapping the gate electrode, a first connection portion connected to one side of the channel portion, and a second connection portion connected to the other side of the channel portion. The sub-conductive material layer includes a source conductive material layer on the first connection portion, and a drain conductive material layer on the second connection portion. The conductive material layer is disposed on the channel portion and is disposed on the same layer as the sub-conductive material layer.

Abstract: A thin film transistor, and a method for manufacturing the same and a display apparatus comprising the same are provided. The thin film transistor includes a light shielding layer, an active layer on the light shielding layer, a gate electrode spaced apart from the active layer and overlapping at least a portion of the active layer, and an internal bridge electrically connecting the light shielding layer and the gate electrode being insulated from the active layer. The internal bridge overlaps the gate electrode and penetrates the active layer along a direction from the gate electrode to the light shielding layer. In addition, one embodiment of the present disclosure provides a display apparatus including the thin film transistor.

Abstract: The present disclosure relates to semiconductor packages and methods of fabricating the semiconductor packages. An example semiconductor package includes a first semiconductor die including a first substrate and a first bonding layer on the first substrate, a second semiconductor die disposed on the first semiconductor die, the second semiconductor die including a second substrate and a second bonding layer under the second substrate, and a silicon oxide layer interposed between the first semiconductor die and the second semiconductor die, where at least one pore is disposed in the silicon oxide layer, and the at least one pore has a height of 1 ? to 2 nm.

Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an active region, a plurality of channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is disposed on a substrate and extends in a first direction. The plurality of channel layers are disposed on the active region to be spaced apart from each other vertically. The gate electrodes are disposed on the substrate, intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers. The source/drain region is disposed on the active region on at least one side of the gate electrodes, and contacting the plurality of channel layers. The contact structure is disposed between the gate electrodes, extending in the second direction, and contacting the source/drain region.

Abstract: The present invention relates to a display control device. A display control device according to an embodiment of the present invention is characterized by comprising: an interface unit which performs data communication with a plurality of displays provided in a vehicle; and a processor which controls the displays provided in the vehicle by means of the interface unit, wherein the processor receives information about a preset input applied to at least one of the plurality of displays provided in the vehicle, and controls the plurality of displays in response to the preset input so that an operation corresponding to the preset input is performed.

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

Abstract: Methods and devices for single cell analysis using fluorescence lifetime imaging microscopy (FLIM) are disclosed. The methods utilize microfluidic devices which use traps to immobilize cells for FLIM analysis. The analysed cells may be sorted before or after imaging and may be plant, animal, or bacterial cells. Analysis of the FLIM data may use a phasor plot and may be used to identify a metabolic pattern of the single cells.

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

Abstract: The present invention relates to a display control device. A display control device according to an embodiment of the present invention is characterized by comprising: an interface unit which performs data communication with a plurality of displays provided in a vehicle; and a processor which controls the displays provided in the vehicle by means of the interface unit, wherein the processor receives information about a preset input applied to at least one of the plurality of displays provided in the vehicle, and controls the plurality of displays in response to the preset input so that an operation corresponding to the preset input is performed.

Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.

Abstract: Compositions and methods for treating viral infection are disclosed. The compositions contain a combination of zinc and a cyclo(His-Pro), in effective amounts. The composition containing a combination of zinc and a cyclo(His-Pro) can be used to treat viral infections including SARS-CoV-2 infections in mammals.

Abstract: The present invention relates to a pharmaceutical composition comprising piperonylic acid as an effective ingredient for anti-aging or regenerating the skin. A composition according to the present invention utilizes piperonylic acid that various plant species naturally contain therein and thus does not cause side effects. Piperonylic acid activates signals associated with cell survival, growth, and proliferation to exhibit the effect of increasing the resistance and survival of skin cells against external stimuli and enhancing the regeneration of the skin damaged due to external stimuli or senescence. In addition, piperonylic acid of the present invention has a similar function to EGF, but is stable and small in size in contrast to EGF. Thus, piperonylic acid of the present invention has the advantage of being able to easily move to the skin basal layer across the skin barrier and perform its function.

Abstract: The present invention relates to a composition comprising gossypetin or a salt thereof for prevention or treatment of neurodegenerative disease. Having an excellent prophylactic and therapeutic effect on neurodegenerative disease and excellently improving memory and cognitive functions, the composition of the invention can be advantageously used not only for preventing and treating neurodegenerative disease, but also for improving memory and cognitive function.

Abstract: The present invention relates to a pharmaceutical composition comprising piperonylic acid as an effective ingredient for anti-aging or regenerating the skin. A composition according to the present invention utilizes piperonylic acid that various plant species naturally contain therein and thus does not cause side effects. Piperonylic acid activates signals associated with cell survival, growth, and proliferation to exhibit the effect of increasing the resistance and survival of skin cells against external stimuli and enhancing the regeneration of the skin damaged due to external stimuli or senescence. In addition, piperonylic acid of the present invention has a similar function to EGF, but is stable and small in size in contrast to EGF. Thus, piperonylic acid of the present invention has the advantage of being able to easily move to the skin basal layer across the skin barrier and perform its function.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an active region, a plurality of channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is disposed on a substrate and extends in a first direction. The plurality of channel layers are disposed on the active region to be spaced apart from each other vertically. The gate electrodes are disposed on the substrate, intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers. The source/drain region is disposed on the active region on at least one side of the gate electrodes, and contacting the plurality of channel layers. The contact structure is disposed between the gate electrodes, extending in the second direction, and contacting the source/drain region.

Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.