Patents by Inventor Dohyun Lee
Dohyun Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250107208Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.Type: ApplicationFiled: December 11, 2024Publication date: March 27, 2025Applicant: Samsung Electronics Co., Ltd.Inventors: Changhyun KIM, Seunggeol NAM, Keunwook SHIN, Dohyun LEE
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Patent number: 12199165Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.Type: GrantFiled: February 14, 2022Date of Patent: January 14, 2025Assignee: Samsung Electronics Co., Ltd.Inventors: Changhyun Kim, Seunggeol Nam, Keunwook Shin, Dohyun Lee
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Patent number: 12080797Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an active region, a plurality of channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is disposed on a substrate and extends in a first direction. The plurality of channel layers are disposed on the active region to be spaced apart from each other vertically. The gate electrodes are disposed on the substrate, intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers. The source/drain region is disposed on the active region on at least one side of the gate electrodes, and contacting the plurality of channel layers. The contact structure is disposed between the gate electrodes, extending in the second direction, and contacting the source/drain region.Type: GrantFiled: September 7, 2021Date of Patent: September 3, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dohyun Lee, Dongwoo Kim, Daeyong Kim, Rakhwan Kim
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Patent number: 12075183Abstract: The present invention relates to a display control device. A display control device according to an embodiment of the present invention is characterized by comprising: an interface unit which performs data communication with a plurality of displays provided in a vehicle; and a processor which controls the displays provided in the vehicle by means of the interface unit, wherein the processor receives information about a preset input applied to at least one of the plurality of displays provided in the vehicle, and controls the plurality of displays in response to the preset input so that an operation corresponding to the preset input is performed.Type: GrantFiled: March 22, 2021Date of Patent: August 27, 2024Assignee: LG ELECTRONICS INC.Inventors: Sungbae Jun, Baik Han, Dohyun Lee
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Patent number: 11869836Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.Type: GrantFiled: February 6, 2023Date of Patent: January 9, 2024Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Donghee Seo, Heonbok Lee, Tae-Yeol Kim, Daeyong Kim, Dohyun Lee
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Patent number: 11833504Abstract: Methods and devices for single cell analysis using fluorescence lifetime imaging microscopy (FLIM) are disclosed. The methods utilize microfluidic devices which use traps to immobilize cells for FLIM analysis. The analysed cells may be sorted before or after imaging and may be plant, animal, or bacterial cells. Analysis of the FLIM data may use a phasor plot and may be used to identify a metabolic pattern of the single cells.Type: GrantFiled: April 13, 2020Date of Patent: December 5, 2023Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, PIONEER HI-BRED INTERNATIONAL, INC.Inventors: Abraham P. Lee, Michelle A. Digman, Dohyun Lee, Xuan Li, Ning Ma, Yue Yun
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Publication number: 20230187335Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.Type: ApplicationFiled: February 6, 2023Publication date: June 15, 2023Inventors: Donghee SEO, Heonbok LEE, Tae-Yeol KIM, Daeyong KIM, Dohyun LEE
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Publication number: 20230146403Abstract: The present invention relates to a display control device. A display control device according to an embodiment of the present invention is characterized by comprising: an interface unit which performs data communication with a plurality of displays provided in a vehicle; and a processor which controls the displays provided in the vehicle by means of the interface unit, wherein the processor receives information about a preset input applied to at least one of the plurality of displays provided in the vehicle, and controls the plurality of displays in response to the preset input so that an operation corresponding to the preset input is performed.Type: ApplicationFiled: March 22, 2021Publication date: May 11, 2023Applicant: LG ELECTRONICS INC.Inventors: Sungbae JUN, Baik HAN, Dohyun LEE
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Publication number: 20230070266Abstract: A semiconductor device includes a first source/drain structure including a first semiconductor region and a first electrode in electrical contact with the first semiconductor region; a second source/drain structure including a second semiconductor region and a second electrode in electrical contact with the second semiconductor region; a channel between the first semiconductor region and the second semiconductor region; and a gate structure including a gate insulating film covering the channel and a gate electrode covering the gate insulating film. The first source/drain structure further includes a silicide film between the first semiconductor region and the first electrode and a conductive barrier between the silicide film and the first electrode. The conductive barrier includes a conductive two-dimensional material.Type: ApplicationFiled: February 14, 2022Publication date: March 9, 2023Applicant: Samsung Electronics Co., Ltd.Inventors: Changhyun KIM, Seunggeol NAM, Keunwook SHIN, Dohyun LEE
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Patent number: 11581253Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.Type: GrantFiled: October 18, 2021Date of Patent: February 14, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Donghee Seo, Heonbok Lee, Tae-Yeol Kim, Daeyong Kim, Dohyun Lee
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Patent number: 11547737Abstract: Compositions and methods for treating viral infection are disclosed. The compositions contain a combination of zinc and a cyclo(His-Pro), in effective amounts. The composition containing a combination of zinc and a cyclo(His-Pro) can be used to treat viral infections including SARS-CoV-2 infections in mammals.Type: GrantFiled: June 17, 2021Date of Patent: January 10, 2023Assignee: NovMetaPharma Co., Ltd.Inventors: Hoe-Yune Jung, Heonjong Lee, Dohyun Lee
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Publication number: 20220370320Abstract: The present invention relates to a pharmaceutical composition comprising piperonylic acid as an effective ingredient for anti-aging or regenerating the skin. A composition according to the present invention utilizes piperonylic acid that various plant species naturally contain therein and thus does not cause side effects. Piperonylic acid activates signals associated with cell survival, growth, and proliferation to exhibit the effect of increasing the resistance and survival of skin cells against external stimuli and enhancing the regeneration of the skin damaged due to external stimuli or senescence. In addition, piperonylic acid of the present invention has a similar function to EGF, but is stable and small in size in contrast to EGF. Thus, piperonylic acid of the present invention has the advantage of being able to easily move to the skin basal layer across the skin barrier and perform its function.Type: ApplicationFiled: August 8, 2022Publication date: November 24, 2022Inventors: Kyong Tai KIM, Dohyun LEE, Jinsun LIM
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Publication number: 20220304974Abstract: The present invention relates to a composition comprising gossypetin or a salt thereof for prevention or treatment of neurodegenerative disease. Having an excellent prophylactic and therapeutic effect on neurodegenerative disease and excellently improving memory and cognitive functions, the composition of the invention can be advantageously used not only for preventing and treating neurodegenerative disease, but also for improving memory and cognitive function.Type: ApplicationFiled: April 16, 2020Publication date: September 29, 2022Inventors: Kyong Tai KIM, Dohyun LEE, Kyung Won JO, Younghun JEONG
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Patent number: 11439577Abstract: The present invention relates to a pharmaceutical composition comprising piperonylic acid as an effective ingredient for anti-aging or regenerating the skin. A composition according to the present invention utilizes piperonylic acid that various plant species naturally contain therein and thus does not cause side effects. Piperonylic acid activates signals associated with cell survival, growth, and proliferation to exhibit the effect of increasing the resistance and survival of skin cells against external stimuli and enhancing the regeneration of the skin damaged due to external stimuli or senescence. In addition, piperonylic acid of the present invention has a similar function to EGF, but is stable and small in size in contrast to EGF. Thus, piperonylic acid of the present invention has the advantage of being able to easily move to the skin basal layer across the skin barrier and perform its function.Type: GrantFiled: July 23, 2018Date of Patent: September 13, 2022Assignee: HESED BIO CO., LTD.Inventors: Kyong Tai Kim, Dohyun Lee, Jinsun Lim
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Publication number: 20220216339Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes an active region, a plurality of channel layers, gate electrodes, a source/drain region, and a contact structure. The active region is disposed on a substrate and extends in a first direction. The plurality of channel layers are disposed on the active region to be spaced apart from each other vertically. The gate electrodes are disposed on the substrate, intersecting the active region and the plurality of channel layers, extending in a third direction, and surrounding the plurality of channel layers. The source/drain region is disposed on the active region on at least one side of the gate electrodes, and contacting the plurality of channel layers. The contact structure is disposed between the gate electrodes, extending in the second direction, and contacting the source/drain region.Type: ApplicationFiled: September 7, 2021Publication date: July 7, 2022Inventors: Dohyun Lee, Dongwoo Kim, Daeyong Kim, Rakhwan Kim
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Publication number: 20220044993Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.Type: ApplicationFiled: October 18, 2021Publication date: February 10, 2022Inventors: Donghee SEO, Heonbok LEE, Tae-Yeol KIM, Daeyong KIM, Dohyun LEE
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Publication number: 20210393731Abstract: Compositions and methods for treating viral infection are disclosed. The compositions contain a combination of zinc and a cyclo(His-Pro), in effective amounts. The composition containing a combination of zinc and a cyclo(His-Pro) can be used to treat viral infections including SARS-CoV-2 infections in mammals.Type: ApplicationFiled: June 17, 2021Publication date: December 23, 2021Applicant: NovMetaPharma Co., Ltd.Inventors: Hoe-Yune JUNG, Heonjong LEE, Dohyun LEE
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Patent number: 11152297Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.Type: GrantFiled: June 5, 2020Date of Patent: October 19, 2021Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Donghee Seo, Heonbok Lee, Tae-Yeol Kim, Daeyong Kim, Dohyun Lee
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Patent number: 11090653Abstract: Microfluidic systems and methods to generate and analyze microcapsules comprising biological sample, such as for example, single cells, cellular contents, microspore, protoplast, are disclosed. The microcapsules comprising the biological sample can be preserved by a polymerization process that forms a hydrogel around the biological sample. The hydrogel microcapsules can be trapped in a trapping array or collected in an output reservoir and subject to one or more assays. The trapping array or the output reservoir can be disposed over a porous layer that can filter the continuous phase (e.g., oil) in which the microcapsules are dispersed in the microfluidic device. The pores of the porous layer are configured to be smaller than the size of the microcapsules to prevent the flow of the microcapsules through the porous layer.Type: GrantFiled: October 10, 2017Date of Patent: August 17, 2021Assignees: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA, PIONEER HI-BRED INTERNATIONAL, INC.Inventors: Abraham P. Lee, Dohyun Lee, Yue Yun
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Publication number: 20210167004Abstract: A semiconductor device including an interlayer insulating layer on a substrate; a conductive line on the interlayer insulating layer; and a contact plug penetrating the interlayer insulating layer, the contact plug being connected to the conductive line, wherein the contact plug includes an upper pattern penetrating an upper region of the interlayer insulating layer, the upper pattern protruding upwardly from a top surface of the interlayer insulating layer, the upper pattern includes a first portion penetrating the upper region of the interlayer insulating layer; and a second portion protruding upwardly from the top surface of the interlayer insulating layer, and a width of a lower region of the second portion in a direction parallel to a top surface of the substrate is greater than a width of an upper region of the second portion in the direction parallel to the top surface of the substrate.Type: ApplicationFiled: June 5, 2020Publication date: June 3, 2021Inventors: Donghee SEO, Heonbok LEE, Tae-Yeol KIM, Daeyong KIM, Dohyun LEE