Abstract: An integrated AMR sensor includes a half bridge with two resistors, a Wheatstone bridge with four resistors, or a first Wheatstone bridge with four resistors in an orthogonal configuration, and a second Wheatstone bridge with four resistors in an orthogonal configuration, oriented at 45 degrees with respect to the first Wheatstone bridge. Each resistor includes first magnetoresistive segments with current flow directions oriented at a first tilt angle with respect to a reference direction of the resistor, and second magnetoresistive segments with current flow directions oriented at a second tilt angle with respect to the reference direction. The tilt angles are selected to advantageously cancel angular errors due to shape anisotropies of the magnetoresistive segments. In another implementation, the disclosed system/method include a method for identifying tilt angles which cancel angular errors due to shape anisotropies of the magnetoresistive segments.

Abstract: A strain gauge sensor includes a substrate, at least one resistor comprising a magnetoresistive material on the substrate. The magnetoresistive material exhibits a magnetostriction coefficient ? that is greater than or equal to () |2| parts per million (ppm) and an anisotropic magnetoresistance effect with an anisotropic magnetoresistance of greater than or equal to () 2% ? R/R. The strain gauge sensor consists of a single layer of the magnetoresistive material. At least a first contact to the resistor provides a sensor input and a second contact to the resistor provides a sensor output.

Abstract: An integrated circuit includes a fluxgate magnetometer. The magnetic core of the fluxgate magnetometer is encapsulated with a layer of encapsulant of a nonmagnetic metal or a nonmagnetic alloy. The layer of encapsulate provides stress relaxation between the magnetic core material and the surrounding dielectric. A method for forming an integrated circuit has the magnetic core of a fluxgate magnetometer encapsulated with a layer of a nonmagnetic metal or nonmagnetic alloy to eliminate delamination and to substantially reduce cracking of the dielectric that surrounds the magnetic core.

Abstract: An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.

Abstract: A Hall effect sensor comprises a semiconductor substrate, a first well formed in the semiconductor substrate, a first ohmic contact formed in the first well, a second ohmic contact formed in the first well, a first terminal electrically coupled to the first ohmic contact, a second terminal electrically coupled to the second ohmic contact, and a first metal layer formed over the semiconductor substrate. The first metal layer comprises a first interconnect and a first trace, where the first trace is formed over the first well, and where the first interconnect electrically couples a first part of the first well to a second part of the first well. The first and second ohmic contacts are each positioned between the first part and the second part of the first well, where the first interconnect is electrically isolated from the first trace.

Abstract: An integrated circuit includes a fluxgate magnetometer. The magnetic core of the fluxgate magnetometer is encapsulated with a layer of encapsulant of a nonmagnetic metal or a nonmagnetic alloy. The layer of encapsulate provides stress relaxation between the magnetic core material and the surrounding dielectric. A method for forming an integrated circuit has the magnetic core of a fluxgate magnetometer encapsulated with a layer of a nonmagnetic metal or nonmagnetic alloy to eliminate delamination and to substantially reduce cracking of the dielectric that surrounds the magnetic core.

Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor die. The die comprises a plurality of AMR angle sensors, each of the plurality of AMR angle sensors comprising a first Wheatstone bridge and a second Wheatstone bridge, wherein an angle position output of the sensor die includes a combination of angle position outputs of each of the plurality of AMR angle sensors.

Abstract: Various examples provide an electronic device that includes first and second rectangular resistor segments, each resistor segment having a doped resistive region formed in a semiconductor substrate. The first resistor segment has a first trim end and a first bridge end, and the second resistor segment has a second bridge end. The first bridge end is adjacent the second bridge end. A conductive interconnect line connects to the first bridge end and to the second bridge end. At least one connection terminal to the first resistor segment is located at the first trim end.

Abstract: Various examples provide an electronic device that includes first and second resistor segments. Each of the resistor segments has a respective doped resistive region formed in a semiconductor substrate. The resistor segments are connected between first and second terminals. The first resistor segment is configured to conduct a current in a first direction, and the second resistor segment is configured to conduct the current in a second different direction. The directions may be orthogonal crystallographic directions of the semiconductor substrate.

Abstract: An integrated fluxgate device has a magnetic core disposed over a semiconductor substrate. A first winding is disposed in a first metallization level above and a second metallization level below the magnetic core, and is configured to generate a first magnetic field in the magnetic core. A second winding is disposed in the first and second metallization levels and is configured to generate a second magnetic field in the magnetic core. A third winding is disposed in the first and second metallization levels and is configured to sense a magnetic field in the magnetic core that is the net of the first and second magnetic fields.

Abstract: A Hall effect sensor comprises a semiconductor substrate, a first well formed in the semiconductor substrate, a first ohmic contact formed in the first well, a second ohmic contact formed in the first well, a first terminal electrically coupled to the first ohmic contact, a second terminal electrically coupled to the second ohmic contact, and a first metal layer formed over the semiconductor substrate. The first metal layer comprises a first interconnect and a first trace, where the first trace is formed over the first well, and where the first interconnect electrically couples a first part of the first well to a second part of the first well. The first and second ohmic contacts are each positioned between the first part and the second part of the first well, where the first interconnect is electrically isolated from the first trace.

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

Abstract: Some embodiments are directed to an anisotropic magneto-resistive (AMR) angle sensor. The sensor comprises a first Wheatstone bridge comprising a first serpentine resistor, a second serpentine resistor, a third serpentine resistor, and a fourth serpentine resistor. The sensor also comprises a second Wheatstone bridge comprising a fifth serpentine resistor, a sixth serpentine resistor, a seventh serpentine resistor, and an eighth serpentine resistor. The serpentine resistors comprise anisotropic magneto-resistive material that changes resistance in response to a change in an applied magnetic field. The sensor also includes a surrounding of anisotropic magneto-resistive material disposed in substantially a same plane as the serpentine resistors, enclosing the serpentine resistors, and electrically isolated from the serpentine resistors. The first Wheatstone bridge, the second Wheatstone bridge, and the surrounding of anisotropic magneto-resistive material are part of a sensor die.

Abstract: An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.

Abstract: A strain gauge sensor includes a substrate, at least one resistor comprising a magnetoresistive material on the substrate. The magnetoresistive material exhibits a magnetostriction coefficient ? that is greater than or equal to () |2| parts per million (ppm) and an anisotropic magnetoresistance effect with an anisotropic magnetoresistance of greater than or equal to () 2% ? R/R. The strain gauge sensor consists of a single layer of the magnetoresistive material. At least a first contact to the resistor provides a sensor input and a second contact to the resistor provides a sensor output.

Abstract: A current-sensing system includes a conductor for carrying a first electrical current generating a first magnetic field. A device, spaced from the conductor by a clearance, includes a semiconductor integrated circuit die in a package. The semiconductor integrated circuit die includes at least one elongated bar of a first ferromagnetic material magnetized by the first magnetic field; a sensor comprising a first coil wrapped around the at least one elongated bar to sense the bar's magnetization; and an electronic driver creating a second electrical current flowing through a second coil wrapped around the at least one elongated bar generating a second magnetic field to compensate the at least one bar's magnetization. The package has a first outer surface free of device terminals. A discrete plate of a second ferromagnetic material is positioned in the clearance and is conformal with the first outer surface of the package.

Abstract: An inductor conductor design which minimizes the impact of skin effect in the conductors at high frequencies in integrated circuits and the method of manufacture thereof is described herein.

Abstract: An integrated AMR angular sensor includes a first sensor resistor and a second sensor resistor. The first sensor resistor and the second sensor resistor each has a plurality of magnetoresistive segments containing magnetoresistive material that are electrically coupled in series. The magnetoresistive segments of each sensor resistor are parallel/anti-parallel to each other. The magnetoresistive segments of the second sensor resistor are perpendicular to the magnetoresistive segments of the first sensor resistor. The first magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to a sensor central point of the integrated AMR angular sensor. Similarly, the second magnetoresistive segments are divided into a first group and a second group, which are disposed in a balanced distribution relative to the sensor central point.

Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.

Abstract: An integrated device includes a substrate having a semiconductor surface layer including functional circuitry, a lower metal stack on the semiconductor surface layer, an interlevel dielectric (ILD) layer on the lower metal stack, a top metal layer providing AMR contact pads and bond pads coupled to the AMR contact pads in the ILD layer. An AMR device is above the lower metal stack lateral to the functional circuitry including a patterned AMR stack including a seed layer, an AMR material layer, and a capping layer, wherein the seed layer is coupled to the AMR contact pads by a coupling structure. A protective overcoat (PO layer) is over the AMR stack. There are openings in the PO layer exposing the bond pads.