Abstract: A galvanic die has signal structures and a transformer structure that provide galvanically-isolated signal and power paths for a high-voltage die and a low-voltage die, which are both physically supported by the galvanic die and electrically connected to the signal and transformer structures of the galvanic die.

Abstract: A micro-electromechanical systems (MEMS) relay includes a switch with a first contact region and a second contact region that are vertically separated from each other by a gap. The MEMS relay requires a small vertical movement to close the gap and therefore is mechanically robust. In addition, the MEMS relay has a small footprint and, therefore, can be formed on top of small integrated circuits.

Abstract: A galvanic die has signal structures and a transformer structure that provide galvanically-isolated signal and power paths for a high-voltage die and a low-voltage die, which are both physically supported by the galvanic die and electrically connected to the signal and transformer structures of the galvanic die.

Abstract: A micro-electromechanical systems (MEMS) relay includes a switch with a first contact region and a second contact region that are vertically separated from each other by a gap. The MEMS relay requires a small vertical movement to close the gap and therefore is mechanically robust. In addition, the MEMS relay has a small footprint and, therefore, can be formed on top of small integrated circuits.

Abstract: A semiconductor transformer provides high frequency operation by forming the primary windings of the transformer around a section of magnetic material that has a hard axis that lies substantially parallel to the direction of the magnetic field generated by the primary windings. The core can also be formed to have a number of sections where the magnetic flux follows the hard axis through each section of the core.

Abstract: A semiconductor transformer provides high frequency operation by forming the primary windings of the transformer around a section of magnetic material that has a hard axis that lies substantially parallel to the direction of the magnetic field generated by the primary windings. The core can also be formed to have a number of sections where the magnetic flux follows the hard axis through each section of the core.

Abstract: To fabricate a magnetic field sensor, a copper barrier film is formed. A magnetic metal film is formed on the barrier film. A plurality of trenches is formed with a desired thickness in the magnetic metal film. A copper film is formed in the plurality of trenches, so that multiple layers of magnetic metal film and copper film are formed. The RF semiconductor device equipped with the magnetic field sensor includes a magnetic field sensor made by the above method. The magnetic field sensor is attached on a semiconductor substrate. Metal wirings are formed at near the both sides of the magnetic field sensor. An insulating film is formed on top. An inductor is formed on the insulating film at predetermined locations.

Abstract: A method for fabricating a magnetic field sensor having a multi-layer structure and an RF semiconductor device equipped with it are disclosed. The method comprises: forming a barrier film on a lower layer, forming a magnetic metal film on the barrier film, forming a plurality of trenches with a desired thickness in the magnetic metal film, forming a copper film in the plurality of trenches, so that multiple layers of magnetic metal film and copper film can be formed repeatedly.